• 한국전자통신학회논문지
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• 제6권5호
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• pp.697-702
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• 2011

본 논문에서는 유기박막트랜지스터용 절연막에 활용코자 플라즈마중합방법을 이용하여 PMMA 절연막을 제작하였다. 기판의 바이어스인가 및 증착중 압력변화에 따른 전기적특성을 파악한 결과, 플라즈마중합법에 의한 MMA절연막의 증착조건 RF100[W], Ar20[sccm], 5[mtorr], RF bias 20[W] 에서 3.4의 유전율, 8.6[nm/min]의 높은 증착율 및 높은 절연특성을 얻을수 있다. 이처럼 얻어진 플라즈마 중합막은 유기트랜지스터 및 유기메모리의 절연막으로 충분히 활용가능함을 알 수 있다.

• 대한전자공학회논문지
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• 제26권4호
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• pp.73-80
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• 1989

영상감지막으로 사용되는 PbO광도전막을 산소압, 증착속도 및 기판온도 등의 조건을 변화시켜 가면서 유도성가열증착법으로 제조하였다. 이 때 증착조건이 PbO막의 구조적 및 전기적 특성에 미치는 영향을 SEM사진, X선회절도 및 전류-전압특성 등을 통해 조사 하였다. 이 결과로 부터 정방정계의 구조의 적색PbO가 <110> 및 <101> 방향으로 우세하게 성장할 때 광전류대 암전류의 비와 광전변환률이 증가함을 알 수 있었다.

• 한국결정성장학회지
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• 제13권4호
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• pp.157-164
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• 2003

$LaF_{3}$ thin films have been fabricated on Si (100) substrates under the highest possible vacuum condition by pulsed laser deposition (PLD) method. The temperature of the sbustrate varied from $20^{\circ}C$ to $800^{\circ}C$. The films deposited at the higher temperature indicated the sharper peaks in the X-ray diffraction measurement. A highly oriented film was successfully obtained at a substrate temperature of $800^{\circ}C$. The surface observation by the AFM revealed that the many hexagonal structures constructed the film. The XPS analysis revealed that the lacking of F in the film deposited at $600^{\circ}C$ were much more than that in film at $^20{\circ}C$. Adding the adequate amount of $CF_{4}$ gas in the growth chamber can compensate this lacking of F.

• Transactions on Electrical and Electronic Materials
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• 제1권2호
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• pp.12-17
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• 2000

Helicon waves were excited by a Nagoya type III antenna in magnetized plasma, and hydrogen and methane are fed through a Mass Flow Controller(MFC). We made a diagnosis of properties of helicon plasma by H$_2$gaseous discharge, and fabricated the diamond thin film. The maximum measured electron density was 1${\times}$10$\^$10/ cm$\^$-3/. Diamond films have been growo on (100) silicon substrate using the helicon plasma chemical vapor deposition. Diamond films were deposited at a pressure of 0.1 Torr, deposition time of 40~80 h, a substrate temperature of 700$^{\circ}C$ and methane concentrations of 0.5~2.5%. The growth characteristics were investigated by means of X-ray Photoelectron (XPS) and X-ray Diffraction(XRD), XRD and XPS analysis revealed that SiC was formed, and finally diamond particles were definitely deposited on it. With increasing deposition time, the thickness and crystallization of the daimond thin film increased, For this system the optimum condition of methane concentration was estimated to near to 1.5%.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권5호
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• pp.379-384
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• 1999

Langmuir-Blodgett(LB) films which have high ordered orientation and ordering structure are fabricated by LB method which deposit the ultra-thin films of organic materials at a molecular level. The electrical characteristics of stearic acid LB ultra-thin films for the horizontal direction were investigated to develop the gas sensor using LB ultra-thin films. The optimal deposition condition to deposit the LB ultra-thin films was obtained from $\pi-A$ isotherms and the deposition status of stearic acid LB ultra-thin films was verified by the measurement of deposition ratio, UV-absorbance, and electrical properties for LB ultra-thin films. The conductivity of stearic acid LB ultra-thin films for horizontal direction was about $10_{-8}[S/cm]$. The activation energy for LB ultra-thin films with respect to variation of temperature was about 1.0[eV], which was correspond to semiconductor material. The response characteristics for organic gas were confirmed by measuring the response time, recovery time, and reproducibility of the LB ultra-thin to each organic gas. Also, the penetration and adsorption behavior of gas molecule were confirmed through the organic gas response characteristics of LB ultra-thin films with respect to temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.571-574
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• 2003

The thin films fabricated by using the layer-by-layer sputtering was compared with the thin film fabricated by using the evaporation method. Re-evaporation in the form of Bi atoms or $Bi_2O_3$ molecules easily bring out the deficiency of Bi atoms in thin film due to the long sputtering time of the layer-by-layer deposition. On the other hand, the respective atom numbers corresponding to BiSrCaCuO phase is concurrently supplied on the film surface in the evaporation deposition process and leads to BiSrCaCuO phase formation. Also, it is cofirmed that by optimizing the deposition condition, each single phase of the Bi2201 phase and the Bi2212 phase can be fabricated, the sticking coefficient of Bi element is clearly related to the changing of substrate temperature and the formation of the Bi2212 phase.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.397-398
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• 2005

Ferroelectric Lithium niobate ($LiNbO_3$) thin films are fabricated on $Al_2O_3$(0001) substrate using Pulsed Laser Deposition (PLD). The various deposition conditions such as substrate temperature, oxygen pressure, and post annealing condition are investigated to deposite c-axis oriented $LiNbO_3$ thin films. Highly c-axis oriented thin films are obtained under the conditions of working pressure of 100 mTorr, deposition for 10 min at $450^{\circ}C$, and in-situ annealing for 40 min. The $LiNbO_3$ thin films are chemically etched after electric poling and the etched configurations are studied by scanning electron microscope (SEM).

• 한국표면공학회지
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• 제54권3호
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• pp.133-138
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• 2021

Ternary Ti-X-N coatings, where X = Al, Si, Cr, O, etc., have been widely used for machining tools and cutting tools such as inserts, end-mills, and etc. Ti-Al-N-O coatings were deposited onto silicon wafer and WC-Co substrates by a cathodic arc evaporation (CAE) technique at various negative substrate bias voltages. In this study, the influence of substrate bias voltages during deposition on the microstructure and mechanical properties of Ti-Al-N-O coatings were systematically investigated to optimize the CAE deposition condition. Based on results from various analyses, the Ti-Al-N-O coatings prepared at substrate bias voltage of -80 V in the process exhibited excellent mechanical properties with a higher compressive residual stress. The Ti-Al-N-O (-80 V) coating exhibited the highest hardness around 30 GPa and elastic modulus around 303 GPa. The improvement of mechanical properties with optimized bias voltage of -80 V can be explained with the diminution of macroparticles, film densification and residual stress induced by ion bombardment effect. However, the increasing bias voltage above -80 V caused reduction in film deposition rate in the Ti-Al-N-O coatings due to re-sputtering and ion bombardment phenomenon.

• 한국산업융합학회 논문집
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• 제25권6_2호
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• pp.1037-1045
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• 2022

In this study, nanoscale Al₂O3 ceramic particles were used due its exceptionally high hardness characteristics, chemical stability, and wear resistance properties. These nanoparticles will be used to investigate the optimal process conditions for the electro co-deposition of the Ni-Al₂O₃ composite coatings. A Watts bath electrolytic solution of a controlled composition along with a fixed agitation speed was used for this study. Whereas the current density, the pH value, temperature and concentration of the nano Al₂O₃ particles of the electrolyte were designated as the manipulative variables. The experimental design method was based on the orthogonal array to find the optimum processing parameters for the electro co-deposition of Ni-Al₂O₃ composite coatings. The result of confirmation experimental based on the optimal processing condition through the analysis of variance ; EDX analysis found that the ratio of alumina increased to 8.65 wt.% and subsequently the overall hardness increased to 983 Hv. Specially, alumina were evenly distributed on Nickel matrix and particles were embedded more firmly and finely in Nickel matrix.

• 한국재료학회지
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• 제5권7호
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• pp.835-841
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• 1995

Si$_3$N$_4$가 추진기관 연소조건 하에서 흑연의 산화와 마모를 효과적으로 방지하는 다층 코팅재료로 쓰일 수 있도록 하기 위하여 저압화학기상증착법(LPCVD)으로 Si$_3$N$_4$를 코팅할 때의 증착특성에 대해 연구하였다. 흑연 위에 pack cementation방법으로 SiC를 코팅하고 그 위에 저압화학기상증착법으로 Si$_3$N$_4$를 코팅 하였으며, 증착온도와 반응기체입력비를 변화시키면서 이에 따른 증착속도와 표면형상의 변화를 관찰하였다. 증착속도는 증착온도가 높아짐에 따라 처음에는 증가하다가 최대값을 나타낸 후 감소하는 경향을 나타냈으며, 그레인의 크기는 증착온도가 높아짐에 따라 작아지는 경향을 보였다. 한편, 반응기체의 입력비가 20$\leq$NH$_3$/SiH$_4$$\leq$40인 조건에서는 증착속도의 변화나 표면형상의 변화를 관찰할 수 없었다. 증착온도 800~130$0^{\circ}C$ 범위에서 증착된 Si$_3$N$_4$가 비정질상인 것을 XRD로 확인할 수 있었으며 130$0^{\circ}C$, 질소 분위기에서 2시간 동안 열처리하여 결정상인 Si$_3$N$_4$를 인을 수 있었다.