High indium incorporation in the growth of InGaAs on (100) GaAs by precursor alternating metalorganic chemical vapor deposition (Precursor alternating metalorganic chemical vapor deposition에 의한 (100) GaAs 기판위로의 InGaAs 성장시의 높은 indium 유입)
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- Journal of the Korean Vacuum Society
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- v.5 no.4
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- pp.354-358
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- 1996