Characteristics of Polysilicon Films Deposited on Silicon Wafers with Enlarged Microwave Plasma

대면적화된 마이크로파 플라즈마를 이용하여 실리콘 웨이퍼에 증착한 다결정 실리콘의 특성 연구

  • Ryu, Geun-Geol (Dept. of Material Engineering, Soonchunhyang University)
  • 류근걸 (순천향대학교 재료공학과)
  • Published : 1999.06.01

Abstract

Semiconductor industry requires the development of new technology such as 300 mm technology, suitable for manufacturing the next generation dervices. A promising process for realizing 300 mm technology can be achieved by using enlarged microwave plasma chemical vapor deposition (MWCVD) technology. In this work, we used radial line slot antenna for enlarging microwave plasma area, and carried ut the deposition of polysilicon films using enlarged MWCVD for the first time in Korea. The results was as follows. Deposited polysilicon films showed various degrees of crystallinity as well as epitaxy to silicon substrates even at low temperature of $300^{\circ}C$. Deposition rates also controled crystallization behavior and slo deposition rates showed very high crystallinity. It could be said that enlarged MWCVD system and technology was worth to get attraction as one os future technologies for 1 G DRAM era.

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