• Transactions of the Korean hydrogen and new energy society
• /
• v.34 no.2
• /
• pp.155-161
• /
• 2023

Recently, a study on alternative and renewable energy is being conducted due to energy depletion and environmental problems. In particular, a hydrogen has the advantage of converting and storing the remaining energy into water-electrolyzed hydrogen through renewable energy generation. In general, due to reasons such as insulation problems, a study on high-pressure hydrogen storage tanks and related parts has recently been conducted. However, in the case of liquid hydrogen, the volume can be reduced by about 800 times or more compared to high-pressure hydrogen gas, so the study on this is needed as a technology that can increase energy density. In this study, the evaporation characteristics were analyzed under fixed heat flux conditions for liquid hydrogen storage tanks and the change in thermal stratification according to sloshing was analyzed. The heat flux condition was fixed at 250 W/m² and the horizontal resonance frequency of the primary mode was applied to the storage tank. As a result, it was confirmed that the thermal stratification phenomenon decreased compared to the case where the slashing was not present due to forced convection when the slashing was present.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.7 no.3
• /
• pp.196-208
• /
• 2007

An analytical model is proposed for an optically controlled Metal Semiconductor Field Effect Transistor (MESFET), known as Optical Field Effect Transistor (OPFET) considering the diffusion fabrication process. The electrical parameters such as threshold voltage, drain-source current, gate capacitances and switching response have been determined for the dark and various illuminated conditions. The Photovoltaic effect due to photogenerated carriers under illumination is shown to modulate the channel cross-section, which in turn significantly changes the threshold voltage, drainsource current, the gate capacitances and the device switching speed. The threshold voltage $V_T$ is reduced under optical illumination condition, which leads the device to change the device property from enhancement mode to depletion mode depending on photon impurity flux density. The resulting I-V characteristics show that the drain-source current IDS for different gate-source voltage $V_{gs}$ is significantly increased with optical illumination for photon flux densities of ${\Phi}=10^{15}\;and\;10^{17}/cm^2s$ compared to the dark condition. Further more, the drain-source current as a function of drain-source voltage $V_{DS}$ is evaluated to find the I-V characteristics for various pinch-off voltages $V_P$ for optimization of impurity flux density $Q_{Diff}$ by diffusion process. The resulting I-V characteristics also show that the diffusion process introduces less process-induced damage compared to ion implantation, which suffers from current reduction due to a large number of defects introduced by the ion implantation process. Further the results show significant increase in gate-source capacitance $C_{gs}$ and gate-drain capacitance $C_{gd}$ for optical illuminations, where the photo-induced voltage has a significant role on gate capacitances. The switching time ${\tau}$ of the OPFET device is computed for dark and illumination conditions. The switching time ${\tau}$ is greatly reduced by optical illumination and is also a function of device active layer thickness and corresponding impurity flux density $Q_{Diff}$. Thus it is shown that the diffusion process shows great potential for improvement of optoelectronic devices in quantum efficiency and other performance areas.

• Analytical Science and Technology
• /
• v.27 no.1
• /
• pp.34-40
• /
• 2014

SPLITT fractionation (SF) allows continuous (and thus a preparative scale) separation of micronsized particles into two size fractions ('fraction-a' and 'fraction-b'). SF is usually carried out in a thin rectangular channel with two inlets and two outlets, which is equipped with flow stream splitters at the inlet and the outlet of the channel, respectively. A new large scale splitter-less gravitational SF (GSF) system had been assembled, which was designed to eliminate the flow stream splitters and thus is operated by the full feed depletion (FFD) mode (FFD-GSF). In the FFD mode, there is only one inlet through which the sample is fed. There is no carrier liquid fed into the channel, and thus prevents the sample dilution. The effects of the sample-feeding flow rate, the channel thickness on the fractionation efficiency (FE, number % of particles that have the size predicted by theory) of FFD-GSF was investigated using industrial polyurethane (PU) latex beads. The carrier liquid was water containing 0.1% FL-70 (particle dispersing agent) and 0.02% sodium azide (used as bactericide). The sample loading rate was varied from about 4 to 7 L/hr with the sample concentration fixed at 0.01%. The GSF channel thickness was varied from 900 to $1300{\mu}m$. Particles exiting the GSF channel were collected and monitored by optical microscopy (OM). Sample recovery was monitored by collecting the fractionated particles on a $0.45{\mu}m$ membrane filter. It was found that FE of fraction-a was increased as the channel thickness increases, and FE of fraction-b was increased as the flow rate was increased. In all cases, the sample recovery has higher than 95%. It seems the new splitter-less FFD GSF system could become a useful tool for large scale separations of various types of micron-sized particles.

• Journal of IKEEE
• /
• v.22 no.1
• /
• pp.180-184
• /
• 2018

Gallium oxide ($Ga_2O_3$) and silicon carbide (SiC) are the material with the wide band gap ($Ga_2O_3-4.8{\sim}4.9eV$, SiC-3.3 eV). These electronic properties allow high blocking voltage. In this work, we investigated the characteristic of $Ga_2O_3$ and 4H-SiC vertical depletion-mode metal-oxide-semiconductor field-effect transistors. We demonstrated that the blocking voltage and on-resistance of vertical DMOSFET is dependent with structure. The structure of $Ga_2O_3$ and 4H-SiC vertical DMOSFET was designed by using a 2-dimensional device simulation (ATLAS, Silvaco Inc.). As a result, 4H-SiC and $Ga_2O_3$ vertical DMOSFET have similar blocking voltage ($Ga_2O_3-1380V$, SiC-1420 V) and then when gate voltage is low, $Ga_2O_3-DMOSFET$ has lower on-resistance than 4H-SiC-DMOSFET, however, when gate voltage is high, 4H-SiC-DMOSFET has lower on-resistance than $Ga_2O_3-DMOSFET$. Therefore, we concluded that the material of power device should be considered by the gate voltage.

• Korean Journal of Soil Science and Fertilizer
• /
• v.20 no.1
• /
• pp.63-67
• /
• 1987

A laboratory experiment was conducted to find out the concentration of phytotoxin in intensively cultivated hot-pepper, garlic and chinese cabbage, and effects of these phytotoxin to the germination and growth of young hot-pepper plant. Also this experiment presents describes of the bio-assay method and results of phytotoxin application to the toxicity of hot-pepper plant. The results obtained were summarized as follows; 1. A series of non-volatile (aromatic) phenolic compounds such as hydroquinone, benzoic-, p-hydroxybenzoic, and vanillic acid were quantitatively and qualitatively analysed using BSA(N, O-bis(trimethylsilyl)acetamide) by means of gas chromatography method. 2. Phytotoxin as hydroquinone, benzoic-, p-hydroxybenzoic- and vanillic acid were determined in intensively cultivated hot- pepper, garlic and chinese cabbage. Highest concentration of phytotoxin was obtained in hot-pepper cultivated soil. 3. Direct toxic action of the applied phytotoxin to the germination and young hot-pepper plant growth was observed at the levels of 200 ppm. Benzoic acid was obtained the highest toxicity to the young hot-pepper plant growth. 4. Mode of actions of phytotoxins to the young hot-pepper plant growth were observed as stunting of stem elongation, discoloration of leaf and oxygen depletion from consideration as causes of symptom.

• Economic and Environmental Geology
• /
• v.42 no.3
• /
• pp.247-259
• /
• 2009

This study is focused on the relationship between whole rock boron contents and metamorphic P-T conditions of metasedimentary rocks from northeastern Yeongnam massif around Samcheok area, Korea. Metamorphic P-T conditions of sillimanite and garnet zones based on the Ti-biotite geothermometer is 553-687$^{\circ}C$ and 582-722$^{\circ}C$ at 4-6 kbar, respectively. In the metasedimentary rocks, boron contents in whole rock decrease with increasing metamorphic grade, from sillimanite zone (9.60-189 ppm B) to garnet zone (2.63-15.97 ppm B), except one sample (90.9 ppm B) from garnet zone containing graphites. Boron depletion in garnet zone has relation with mode of tourmaline which are broken down with increasing metamorphic temperature. Boron contents are indirectly proportional to major and trace elements such as $Al_2O_3$, MgO, $Fe_2O_3$, $K_2O$, Li, Ba, Sc, Co, Cr, Rb and Cs that are abundant in tourmalines. In conclustion, tourmalines and graphite are modulator of boron contents in metasedimentary rocks. In the biotite granitic gneisses, boron contents (2.62-12.2 ppm B) are similar or lower than those of metasedimentary rocks and have no relation with metamorphic P-T conditions.

• Economic and Environmental Geology
• /
• v.25 no.1
• /
• pp.27-39
• /
• 1992

Several pyrophyllite deposits occur around the Milyang area where Cretaceous andesitic rocks and spatially related granitic rocks are widely distributed. Pyrophyllite ores consist mainly of pyrophyllite, and quartz with small amount of sericite, pyrite, dumortierite, and diaspore. The andesitic rocks and spatially related granitic rocks in this area suggest that they could be formed from the same series of a calc-alkaline magma series. The contents of $SiO_2$, $Al_2O_3$, LOI(loss on ignition) are enriched, and $K_2O$, $Na_2O$, CaO, MgO, $Fe_2O_3$ are depleted in altered andesitic rocks and ores. Enrichment of As, Cr, Sr, V, Sb and depletion of Ba, Cs, Ni, Rb, U, Y, Co, Sc, Zn are characteristic during mineralization. The pyrophyllite ores can be discriminated from the altered-and unaltered wall-rocks by an increasing of $(La/Lu)_{cn}$ from 4.18~22.13 to 8.98~55.05. In R-mode cluster analysis, Yb-Lu-Y, La-Ce-Hf-Th-U-Zr, $TiO_2-V-Al_2O_3$, Sm-Eu, $CaO-Na_2O-MnO$, Cu-Zn-Ag, $K_2O-Rb$ are closely correlated. In the discriminant analysis of multi-element data, $P_2O_5$, As, Cr and $Fe_2O_3$, Sr are helpful to identify the ores from the unaltered-and altered wall-rocks. In the factor analysis, the factors of alteration of andesitic rocks and ore mineralization were extracted. In the change of ions per unit volume, $SiO_2$, $Al^{3+}$ and LOI are enriched and $Na^+$, $K^+$, $Ca^{2+}$, $Mg^{2+}$, $Mn^{2+}$ and $Fe^{3+}$ are depleted during the alteration processes. The Milyang and the Sungjin pyrophyllite deposits could be mineralized by hydrothermal alteration in a geochemical condition of low activity ratio of alkaline ions to hydrogen ion with reference to spatially related granitic rocks.