• Human Ecology Research
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• 제53권5호
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• pp.543-556
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• 2015

This study examined the influence of self-regulatory resource depletion and self-regulatory modes on fashion product purchase intention. Initial research design dealt with differences of the resource depletion effect according to self-regulatory modes. The study used a 2 (self-regulatory resource depletion: depletion/non-depletion) ${\times}$ 2 (regulatory mode: assessment mode/locomotion mode) between-subjects factorial design. Second, the research design empirically analyzed the influence of self-regulatory resource depletion and self-regulatory mode on the fashion product purchase intention by each product group divided by type and involvement of fashion product. The subjects for the initial research were 255 university students in Seoul, Gyeonggi, and Daejeon. The subjects for the second research were 873 university students in Seoul and Daejeon. Collected data were analyzed with SPSS statistical package with reliability analysis, t -test, analysis of variance (ANOVA), and analysis of covariance (ANCOVA). The results were as follows. First, assessment-oriented consumers showed low purchase intentions about fashion products when self-regulatory resources were exhausted than when self-regulatory resource were not exhausted. Locomotion-oriented consumers, indicated no differences in purchase intention about fashion products regardless of self-regulatory resource depletion. Second, influences on purchase intention by self-regulatory resource depletion and self-regulatory mode were different according to the fashion product group. The results of this study implied that strategies should be differentiated when establishing a fashion industry marketing strategy according to the self-regulatory resource depletion and self-regulatory mode of consumers.

• JSTS:Journal of Semiconductor Technology and Science
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• 제13권4호
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• pp.361-366
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• 2013

A full-range analytic drain current model for depletion-mode long-channel surrounding-gate nanowire field-effect transistor (SGNWFET) is proposed. The model is derived from the solution of the 1-D cylindrical Poisson equation which includes dopant and mobile charges, by using the Pao-Sah gradual channel approximation and the full-depletion approximation. The proposed model captures the phenomenon of the bulk conduction mechanism in all regions of device operation (subthreshold, linear, and saturation regions). It has been shown that the continuous model is in complete agreement with the numerical simulations.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권4호
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• pp.451-456
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• 2014

A compact model of a depletion-mode silicon-nanowire (Si-NW) pH sensor is proposed. This drain current model is obtained from the Pao-Sah integral and the continuous charge-based model, which is derived by applying the parabolic potential approximation to the Poisson's equation in the cylindrical coordinate system. The threshold-voltage shift in the drain-current model is obtained by solving the nonlinear Poisson-Boltzmann equation for the electrolyte. The simulation results obtained from the proposed drain-current model for the Si-NW field-effect transistor (SiNWFET) agree well with those of the three-dimensional (3D) device simulation, and those from the Si-NW pH sensor model also agree with the experimental data.

• JSTS:Journal of Semiconductor Technology and Science
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• 제10권2호
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• pp.152-159
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• 2010

We propose a semi-analytical current conduction model for depletion-mode n-type nanowire field-effect transistors (NWFETs) with top-gate structure. The NWFET model is based on an equivalent circuit consisting of two back-to-back Schottky diodes for the metal-semiconductor (MS) contacts and the intrinsic top-gate NWFET. The intrinsic top-gate NWFET model is derived from the current conduction mechanisms due to bulk charges through the center neutral region as well as of accumulation charges through the surface accumulation region, based on the electrostatic method, and thus it includes all current conduction mechanisms of the NWFET operating at various top-gate bias conditions. Our previously developed Schottky diode model is used for the MS contacts. The newly developed model is integrated into ADS, in which the intrinsic part of the NWFET is developed by utilizing the Symbolically Defined Device (SDD) for an equation-based nonlinear model. The results simulated from the newly developed NWFET model reproduce considerably well the reported experimental results.

• 대한전자공학회논문지SD
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• 제45권4호
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• pp.49-56
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• 2008

본 논문은 효율적인 회로 시뮬레이션을 위한 긴 채널 공핍 모드 n형 나노선 전계효과트랜지스터(nanowire field-effect transistor: NWFET)의 간단한 해석적 전류 전도 모델을 소개한다. 본 연구에서 사용된 NWFET는 bottom-up 방식으로 제작되었으며 게이트가 채널의 아래에 존재하는 구조를 가진다. 이 모델은 다양한 바이어스 조건에서 동작하는 NWFET의 모든 전류 전도 메카니즘을 포함한다. 새롭게 개발된 NWFET 모델로 계산된 결과는 이전에 발표된 NWFET 실험 데이터와 비교할 때 10% 오차범위 안에서 서로 일치한다.

• 센서학회지
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• 제8권5호
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• pp.421-426
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• 1999

본 논문에서는 반절연성 GaAs(semi-insulating GaAs) 기판위에 $Al_2O_3$ 절연막이 게이트 절연막으로 이용된 공핍형모드 p-채널 GaAs MOSFET (depletion mode p-channel GaAs MOSFET)를 제조하였다. 반절연성 GaAs 기판위에 $1\;{\mu}m$의 GaAs 버퍼층(buffer layer), $4000\;{\AA}$의 p형 GaAs 에피층(epi-layer), $500\;{\AA}$의 AlAs층, 그리고 $50\;{\AA}$의 캡층(cap layer)을 차례로 성장시키고 습식열산화시켰으며, 이를 통하여 AlAs층은 완전히 $Al_2O_3$층으로 산화되었다. 제조된 MOSFET의 I-V, $g_m$, breakdown특성 측정을 통하여 AlAs/GaAs epilayer/S I GaAs 구조의 습식열산화는 공핍형 모드 p-채널 GaAs MOSFET를 구현하기에 적합함을 알 수 있다.

• 대한전자공학회논문지SD
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• 제46권12호
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• pp.10-17
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• 2009

Double-Gate MOSFET 구조를 사용한 Nano-Electro-Mechanical MOSFET (NEMFET)는 게이트 길이가 짧아지면서 나타나는 단채널 현상을 효과적으로 제어하는 새로운 구조의 차세대 소자이다. 특히 공핍형 Double-gate NEMFET (Dep-DGNEMFET)은 차단 상태에서 얇은 산화막을 가지므로 subthreshold 전류가 효과적으로 제어된다. 이러한 Dep-DGNEMFET 특성에 대한 해석적 수식을 유도하고 소자 구조가 변화하는 경우의 특성 변화를 분석하였다. 또한 ITRS (International Technology Roadmap for Semiconductors) 전류 기준값을 만족시키기 위하여 Dep-DGNEMFET 소자 구조를 최적화 하였다.

• Journal of Electrical Engineering and Technology
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• 제1권3호
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• pp.396-405
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• 2006

The visual analysis of buried channel (Be) devices such as buried channel MOSFETs and CCDs (Charge Coupled Devices) is investigated to give better understanding and insight for their electrical behaviours using a 3-dimensional (3-D) numerical simulation. This paper clearly demonstrates the capability of the numerical simulation of 'EVEREST' for characterising the analysis of a depletion mode MOSFET and BC CCD, which is a simulation software package of the semiconductor device. The inverse threshold and punch-through voltages obtained from the simulations showed an excellent agreement with those from the measurement involving errors of within approximately 1.8% and 6%, respectively, leading to the channel implanted doping profile of only approximately $4{\sim}5%$ error. For simulation of a buried channel CCD an advanced adaptive discretising technique was used to provide more accurate analysis for the potential barrier height between two channels and depletion depth of a deep depletion CCD, thereby reducing the CPU running time and computer storage requirements. The simulated result for the depletion depth also showed good agreement with the measurement. Thus, the results obtained from this simulation can be employed as the input data of a circuit simulator.

• 한국광학회지
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• 제25권1호
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• pp.44-49
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• 2014

평판 도파로에서 pump가 체렌코프 복사(Cerenkov radiation)의 파동인 경우, pump, signal, 그리고 idler 사이의 매개적 상호작용에 의한 signal의 증폭현상을 해석하였다. 결합모드 이론을 사용하여 pump의 고갈(depletion)을 무시할 수 있는 경우, 수치적 계산으로 쉽게 풀 수 있는 1차 결합모드 미분방정식을 유도하였다. 이 미분방정식의 근사해와 수치적 계산 예를 통해서 signal이 매개적으로 증폭될 수 있음을 보였다.

• 한국진공학회지
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• 제9권4호
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• pp.400-405
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• 2000

유기금속 소스의 농도를 연속적으로 in-situ 측정이 가능한 EPISON ultrasonic monitor를 이용하여 TMIn(trimethly-indium)의 소스 고갈이 InGaAs, InGaAsP bulk 에피층과 1.55 $mu extrm{m}$ InGaAs/InGaAsP SMQW (strained multi-quantum well)에 미치는 영향을 조사하였다. TMIn 소스는 사용량이 80%에서 급격하게 소스 고갈 현상을 보였다. TMIn 소스는 사용량이 80%에서 급격하게 소스 고갈 현상을 보였다. TMIn 소스 고갈에 의한 에피층의 특성 변화를 조사한 결과, bulk 에피층의 경우에는 소스가 고갈 되기 전에 성장한 에피층과 비교하여 DCXRD(double crystal X-ray diffractometry) spectrum에서 피크 분리가 약 300 arcsec정도 Ga-rich 방향으로 이동하였으며 relative FWHM은 약 2배 가량 증가하는 것을 보였다. SMQW 구조에서는 bulk 에피층과는 달리, PL 중심파장에서도 약 40 nm 정도 단파장쪽으로 이동하였으며, 피크 분리는 약 300 arcsec정도 Ga-rich 방향으로 이동하였다. 하지만, EPISON의 closed loop 기능을 사용할 경우에는 TMIn 소스 사용량이 95%에서도 피크 분리가 $\pm$100 arcsec이내의 재현성 있는 에피층 성장이 가능하다는 것을 알 수 있었다.