• 한국세라믹학회지
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• 제49권6호
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• pp.485-492
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• 2012

Dense and single phase $BiFeO_3$ (BFO) ceramics were prepared using attrition milled calcined (coarse) powders of an average particle size of ${\approx}3{\mu}m$ by conventional sintering process. A relative density of ${\approx}96%$ with average grain size $7.3{\mu}m$ was obtained when the powder compacts were sintered at $850^{\circ}C$ even for a shorter duration of 10 min. In contrast, densification barely occurred at $800^{\circ}C$ for up to 12 h rather the microstruce showed the growth of abnormal grains. The grain growth behavior at different temperatures is discussed in terms of nonlinear growth rates with respect to the driving force. The sample sintered at $850^{\circ}C$ for 12 h showed enhanced electrical properties with leakage current density of $4{\times}10^{-7}A/cm^2$ at 1 kV/cm, remnant polarization $2P_r$ of $8{\mu}C/cm^2$ at 20 kV/cm, and minimal dissipation factor (tan ${\delta}$) of ~0.025 at $10^6$ Hz. These values are comparable to the previously reported values obtained using unconventional sintering techniques such as spark plasma sintering and rapid liquid phase sintering.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.336-337
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• 2005

ZnO varistor ceramics were fabricated as a function of the amount of $Y_2O_3$ addition and sintered at $1250^{\circ}C$ for 2 hour. The average grain size was decreased from 14.2 ${\mu}m$ to 8.3 ${\mu}m$ with the amount of $Y_2O_3$ addition, and varistor voltage was increased from 433 V to 563 V with $Y_2O_3$ addition. Nonlinear coefficient a of all specimens were increased with the amount of $Y_2O_3$ more than 67, in case of $Y_2O_3$ 0.01wt% addition showed the excellent results of 87. And leakage current was less than $1{\mu}A$ at 82% of varistor voltage. The clamping voltage ratio of the specimens added 0.01wt% $Y_2O_3$ was 1.41 at 25A [8/20${\mu}s$]. At the specimen 0.01wt% $Y_2O_3$ addition. endurance of surge current and deviation of varistor voltage were 5700A/$cm^2$ and $\Delta$-2.86%, respectively.

• 한국재료학회지
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• 제22권12호
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• pp.675-681
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• 2012

We aimed to examine the co-doping effects of 1/6 mol% $Mn_3O_4$ and 1/4 mol% $Cr_2O_3$ (Mn:Cr = 1:1) on the reaction, microstructure, and electrical properties, such as the bulk defects and grain boundary properties, of ZnO-$Bi_2O_3-Sb_2O_3$ (ZBS; Sb/Bi = 0.5, 1.0, and 2.0) varistors. The sintering and electrical properties of Mn,Cr-doped ZBS, ZBS(MnCr) varistors were controlled using the Sb/Bi ratio. Pyrochlore ($Zn_2Bi_3Sb_3O_{14}$), ${\alpha}$-spinel ($Zn_7Sb_2O_{12}$), and ${\delta}-Bi_2O_3$ (also ${\beta}-Bi_2O_3$ at Sb/Bi ${\leq}$ 1.0) were detected for all of the systems. Mn and Cr are involved in the development of each phase. Pyrochlore was decomposed and promoted densification at lower temperature on heating in Sb/Bi = 1.0 system by Mn rather than Cr doping. A more homogeneous microstructure was obtained in all systems affected by ${\alpha}$-spinel. In ZBS(MnCr), the varistor characteristics were improved dramatically (non-linear coefficient, ${\alpha}$ = 40~78), and seemed to form ${V_o}^{\cdot}$(0.33 eV) as a dominant defect. From impedance and modulus spectroscopy, the grain boundaries can be seen to have divided into two types, i.e. one is tentatively assigned to ZnO/$Bi_2O_3$ (Mn,Cr)/ZnO (0.64~1.1 eV) and the other is assigned to the ZnO/ZnO (1.0~1.3 eV) homojunction.

• 한국재료학회지
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• 제22권12호
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• pp.682-688
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• 2012

In this study we aimed to examine the co-doping effects of 1/6 mol% $Co_3O_4$ and 1/4 mol% $Cr_2O_3$ (Co:Cr = 1:1) on the reaction, microstructure, and electrical properties, such as the bulk defects and the grain boundary properties, of ZnO-$Bi_2O_3-Sb_2O_3$ (ZBS; Sb/Bi = 0.5, 1.0, and 2.0) varistors. The sintering and electrical properties of Co,Cr-doped ZBS, ZBS(CoCr) varistors were controlled using the Sb/Bi ratio. Pyrochlore ($Zn_2Bi_3Sb_3O_{14}$), ${\alpha}$-spinel ($Zn_7Sb_2O_{12}$), and ${\delta}-Bi_2O_3$ were formed in all systems. Pyrochlore was decomposed and promoted densification at lower temperature on heating in Sb/Bi = 1.0 by Cr rather than Co. A more homogeneous microstructure was obtained in all systems affected by ${\alpha}$-spinel. In ZBS(CoCr), the varistor characteristics were improved (non-linear coefficient, ${\alpha}$ = 20~63), and seemed to form ${Zn_i}^{{\cdot}{\cdot}}$(0.20 eV) and ${V_o}^{\cdot}$(0.33 eV) as dominant defects. From impedance and modulus spectroscopy, the grain boundaries were found to be composed of an electrically single barrier (0.94~1.1 eV) that is, however, somewhat sensitive to ambient oxygen with temperature. The phase development, densification, and microstructure were controlled by Cr rather than by Co but the electrical and grain boundary properties were controlled by Co rather than by Cr.

• 한국재료학회지
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• 제23권12호
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• pp.714-721
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• 2013

A stoichiometric mixture of evaporating materials for $ZnAl_2Se_4$ single-crystal thin films was prepared in a horizontal electric furnace. These $ZnAl_2Se_4$ polycrystals had a defect chalcopyrite structure, and its lattice constants were $a_0=5.5563{\AA}$ and $c_0=10.8897{\AA}$.To obtain a single-crystal thin film, mixed $ZnAl_2Se_4$ crystal was deposited on the thoroughly etched semi-insulating GaAs(100) substrate by a hot wall epitaxy (HWE) system. The source and the substrate temperatures were $620^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single-crystal thin film was investigated by using a double crystal X-ray rocking curve and X-ray diffraction ${\omega}-2{\theta}$ scans. The carrier density and mobility of the $ZnAl_2Se_4$ single-crystal thin film were $8.23{\times}10^{16}cm^{-3}$ and $287m^2/vs$ at 293 K, respectively. To identify the band gap energy, the optical absorption spectra of the $ZnAl_2Se_4$ single-crystal thin film was investigated in the temperature region of 10-293 K. The temperature dependence of the direct optical energy gap is well presented by Varshni's relation: $E_g(T)=E_g(0)-({\alpha}T^2/T+{\beta})$. The constants of Varshni's equation had the values of $E_g(0)=3.5269eV$, ${\alpha}=2.03{\times}10^{-3}eV/K$ and ${\beta}=501.9K$ for the $ZnAl_2Se_4$ single-crystal thin film. The crystal field and the spin-orbit splitting energies for the valence band of the $ZnAl_2Se_4$ were estimated to be 109.5 meV and 124.6 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $ZnAl_2Se_4/GaAs$ epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-exciton for n = 1 and $C_{21}$-exciton peaks for n = 21.

• 센서학회지
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• 제23권2호
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• pp.134-141
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• 2014

A stoichiometric mixture of evaporating materials for $BaIn_2Se_4$ epilayers was prepared from horizontal electric furnace. To obtain the single crystal thin films, $BaIn_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the epilayers was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $BaIn_2Se_4$ epilayers measured from Hall effect by van der Pauw method are $8.94{\times}10^{17}cm^{-3}$ and 343 $cm^2/vs$ at 293 K, respectively. The temperature dependence of the energy band gap of the $BaIn_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)$=2.6261 eV-$(4.9825{\times}10^{-3}eV/K)T^2/(T+558 K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $BaIn_2Se_4$ have been estimated to be 116 meV and 175.9 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $BaIn_2Se_4/GaAs$ epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_1-$, $B_1$-exciton for n = 1 and $C_{21}$-exciton peaks for n=21.

• 한국식품위생안전성학회지
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• 제15권1호
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• pp.13-17
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• 2000

전기저항열을 이용한 식품의 가열처리방법인 ohmic heating에 의한 고춧가루의 살균효과를 살펴본 결과, 전계강도를 500 V/m과 700 V/m으로 고정하고 일정온도에 도달할 때까지 ohmic heating으로 열처리하였을 때 5$0^{\circ}C$에서 7$0^{\circ}C$가지는 균수의 변화가 없었고 8$0^{\circ}C$ 이상에서 약 1-log-unit이 감소하였다. 그러나 온도를 9$0^{\circ}C$로 고정하고 holding time을 주었을 때는 40분 이상 열처리하였을 때 초기생균수가 8.5$\times$$10^{6}$CFU/g에서 2.1 $\times$ $10^2$CFU/g으로 약 4.6-log-unit이 감소하였다. Ohmic heating으로 살균시 holding time에 따른 고춧가루의 색도변화는 미미한 변화가 있었으나, 9$0^{\circ}C$에서 40분 열처리하였을 때도 $\Delta$E값이 1.5 이하로 색도 변화는 미약하였다. 살균고춧가루를 이용하여 오징어젓갈을 제조한 결과 생균수가 8.4$\times$$10^3$CFU/g으로 일반고춧가루사용 오징어젓갈의 1.6$\times$$10^{6}$CFU/g 보다 적었으며, 효모 및 곰팡이는 거의 검출되지 않았다. 이러한 결과는 고춧가루에서 대부분의 미생물이 혼입된다는 사실을 반영하는 결과이며, 특히 유통중 변패의 주요항목인 곰팡이 발생이 고춧가루로부터 기인된다는 것을 알 수 있었다.

• Journal of Astronomy and Space Sciences
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• 제29권2호
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• pp.151-161
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• 2012

An intensive analysis of 148 timings of V700 Cyg was performed, including our new timings and 59 timings calculated from the super wide angle search for planets (SWASP) observations, and the dynamical evidence of the W UMa W subtype binary was examined. It was found that the orbital period of the system has varied over approximately $66^y$ in two complicated cyclical components superposed on a weak upward parabolic path. The orbital period secularly increased at a rate of $+8.7({\pm}3.4){\times}10^{-9}$ day/year, which is one order of magnitude lower than those obtained by previous investigators. The small secular period increase is interpreted as a combination of both angular momentum loss (due to magnetic braking) and mass-transfer from the less massive component to the more massive component. One cyclical component had a $20.^y3$ period with an amplitude of $0.^d0037$, and the other had a $62.^y8$ period with an amplitude of $0.^d0258$. The components had an approximate 1:3 relation between their periods and a 1:7 ratio between their amplitudes. Two plausible mechanisms (i.e., the light-time effects [LTEs] caused by the presence of additional bodies and the Applegate model) were considered as possible explanations for the cyclical components. Based on the LTE interpretation, the minimum masses of 0.29 $M_{\odot}$ for the shorter period and 0.50 $M_{\odot}$ for the longer one were calculated. The total light contributions were within 5%, which was in agreement with the 3% third-light obtained from the light curve synthesis performed by Yang & Dai (2009). The Applegate model parameters show that the root mean square luminosity variations (relative to the luminosities of the eclipsing components) are 3 times smaller than the nominal value (${\Delta}L/L_{p,s}{\approx}0.1$), indicating that the variations are hardly detectable from the light curves. Presently, the LTE interpretation (due to the third and fourth stars) is preferred as the possible cause of the two cycling period changes. A possible evolutionary implication for the V700 Cyg system is discussed.

• 대한화학회지
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• 제37권6호
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• pp.612-617
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• 1993

VC$l_3$과 N, P, O 주개 리간드를 반응시켜 새로운 바나듐(Ⅲ) 착물을 합성하였으며 원소분석과 적외선, 핵자기 공명 및 전자 흡수스펙트럼 등을 이용하여 그 특성을 조사하였다. 사용한 리간드는 3,5-Lutidine, 1,2-phenylenediamine, 8-hydroxyquinoline, 9,10-phenanthrenequinone, triphenylphosphine, 1,2-bis(diphenylphosphino)ethane, 1,3-bis(diphenylphosphino)propane 과 1,1'-bis(diphenylphosphino)ferrocene이다. 합성된 착물의 V-Cl 신축진동이 298~367 c$m^{-1}$에서 나타나므로 팔면체 구조로 추정된다. V-X(X=N, P, O) 신축진동이 200~600 cm-1에서 각각 관측되므로 바나듐에 리간드가 배위도니 것을 알 수 있다. Acetonitile의 C≡N 신축진동은 자유리간드(2260 cm-1)보다 약 70 c$m^{-1}$ 증가한 위치에서 나타나며, 또한 C≡N 굽힘진동도 자유리간드(377 c$m^{-1}$)보다 약 60 c$m^{-1}$ 증가한 위치에서 나타난다. 이러한 결과에 따라 [VC$l_3$(L$_2$)MeCN] 및 [VC$l_3$(L-L)MeCN]와 같은 팔면체 구조의 바나듐(Ⅲ) 착물임을 알 수 있었다.

• 센서학회지
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• 제24권6호
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• pp.404-411
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• 2015

A stoichiometric mixture of evaporating materials for $BaAl_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $BaAl_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $BaAl_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $8.29{\times}10^{-16}cm^{-3}$ and $278cm^2/vs$ at 293 K, respectively. The temperature dependence of the energy band gap of the $BaAl_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=3.4205eV-(4.3112{\times}10^{-4}eV/K)T^2/(T+232 K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $BaAl_2Se_4$ have been estimated to be 249.4 meV and 263.4 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $BaAl_2Se_4/GaAs$ epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-exciton for n =1 and $C_{31}$-exciton peaks for n=31.