• Title/Summary/Keyword: defect structure

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Self-assembly of Helical structure by defected nanosheet

  • Yoon, Sang-hee;Sim, Eunji
    • Proceeding of EDISON Challenge
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    • 2016.03a
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    • pp.75-79
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    • 2016
  • A helical nanosturctrue can be obtained by self-assembly method. Utilizing DPD simulation coarse-grained model, we patterned 2D layer nanosheets with repeated diagonal defects and grafts, and programed to self-roll into hollow helix structure. The defected pattern side caused anisotropy, and formed helix or helix-like structure. This opens the possibility to control the helix pitch or cavity radius. In this work, we designed several patterns about diagonal defect with a variety of defect side densities and defect widths and then simulation was carried out. Thus, our results have that parameters are affecting self-assembly of nanosheets and their conformation.

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Case Study for Developing of Standard Process about Defect Consulting Work in Apartment Building (공동주택 하자감정업무 표준절차개발을 위한 사례분석)

  • Park, Jun-Mo;Seo, Deok-Seok
    • Proceedings of the Korean Institute of Building Construction Conference
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    • 2014.05a
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    • pp.158-159
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    • 2014
  • There is urgent for defect consulting work to standardize the investigated method, repaired and reinforced method, and estimated cost about defect in increasing a defect lawsuit of apartment building. For the purpose of developing the standard process of defect consulting work, the review that a used process in law and institution should take precedence. There is not prepared the national standard for defect consulting but is dependent on an experience and a practice of consultants. This study analyzes defect consulting case, defines main steps for developing the standard process, and draws phased work factors. As systemizing this, it is expected to apply to basic structure for developing the standard process of defect consulting work for the next.

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The effects of temperature and vacancy defect on the severity of the SLGS becoming anisotropic

  • Tahouneh, Vahid;Naei, Mohammad Hasan;Mashhadi, Mahmoud Mosavi
    • Steel and Composite Structures
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    • v.29 no.5
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    • pp.647-657
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    • 2018
  • Geometric imperfections may be created during the production process or setting borders of single-layer graphene sheets (SLGSs). Vacancy defects are an instance of geometric imperfection, so investigating the effect of these vacancies on the mechanical properties of single-layer graphene is extremely important. Since very few studies have been conducted on the structure of imperfect graphene (with the vacancy defect) as an anisotropic structure, further study of this defective structure seems imperative. Due to the vacancy defects and for the proper assessment of mechanical properties, the graphene structure should be considered anisotropic in certain states. The present study investigates the effects of site and size of vacancy defects on the mechanical properties of graphene as an anisotropic structure using the lekhnitskii interaction coefficients and Molecular Dynamic approach. The effect of temperature on the severity of the SLGS becoming anisotropic is also investigated in this study. The results reveal that the amount of temperature has a big effect on the severity of the structure getting anisotropic even for a graphene without any defects. The effect of aspect ratio, temperature and also size and site of vacancy defects on the material properties of the graphene are studied in this research work. According to the present study, using material properties of flawless graphene for imperfect structure can lead to inaccurate results.

Performance evaluation of wavelet and curvelet transforms based-damage detection of defect types in plate structures

  • Hajizadeh, Ali R.;Salajegheh, Javad;Salajegheh, Eysa
    • Structural Engineering and Mechanics
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    • v.60 no.4
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    • pp.667-691
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    • 2016
  • This study focuses on the damage detection of defect types in plate structures based on wavelet transform (WT) and curvelet transform (CT). In particular, for damage detection of structures these transforms have been developed since the last few years. In recent years, the CT approach has been also introduced in an attempt to overcome inherent limitations of traditional multi-scale representations such as wavelets. In this study, the performance of CT is compared with WT in order to demonstrate the capability of WT and CT in detection of defect types in plate structures. To achieve this purpose, the damage detection of defect types through defect shape in rectangular plate is investigated. By using the first mode shape of plate structure and the distribution of the coefficients of the transforms, the damage existence, the defect location and the approximate shape of defect are detected. Moreover, the accuracy and performance generality of the transforms are verified through using experimental modal data of a plate.

Improving Device Efficiency for n-i-p Type Solar Cells with Various Optimized Active Layers

  • Iftiquar, Sk Md;Yi, Junsin
    • Transactions on Electrical and Electronic Materials
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    • v.18 no.2
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    • pp.70-73
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    • 2017
  • We investigated n-i-p type single junction hydrogenated amorphous silicon oxide solar cells. These cells were without front surface texture or back reflector. Maximum power point efficiency of these cells showed that an optimized device structure is needed to get the best device output. This depends on the thickness and defect density ($N_d$) of the active layer. A typical 10% photovoltaic device conversion efficiency was obtained with a $N_d=8.86{\times}10^{15}cm^{-3}$ defect density and 630 nm active layer thickness. Our investigation suggests a correlation between defect density and active layer thickness to device efficiency. We found that amorphous silicon solar cell efficiency can be improved to well above 10%.

Physical issues for the next generation of nano devices (차세대 나노소자에서의 물리적 논점)

  • Cho, Mann-Ho
    • Vacuum Magazine
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    • v.1 no.3
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    • pp.21-27
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    • 2014
  • Advanced process and integration for future semiconductor devices is approaching the physical limit. The new materials with low dimensional structure have recently attracted great attention due to its expandability for the future electronic devices. In order to apply the materials to future semiconductor devices, the control of carrier scattering is critical issue. That is, the carrier scattering with physical quantity in low dimensional structure significantly modulates the device characteristics. We introduce the role of defect in several future semiconductor materials and devices. The analysis of defect in the structure becomes the most important techniques. In particular, surface defect in nano structures totally controls the device characteristics. The changes imply that the metrology field is leading the future industry for semiconductor.

Speckle Interferometric Detection of Defects on the backside of steel plate (스페클 간섭계를 이용한 평판 이면결함의 검출 특성)

  • 김동한;장석원;장경영
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2001.04a
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    • pp.195-198
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    • 2001
  • Backside defect of plate structure may grow due to fatigue or overload to cause critical failure during operation, so it is important to detect this kind of defect in line. For this purpose, nondestructive, non-contact and highly sensitive method is required. ESPI and Shearography are considered as useful method to satisfy these requirements. In this paper, the possibility of application of ESPI and Shearography to detect the backside defect of steel plate and to quantify the defect size was tested. For the experiment, some steel plates with defect on the backside were prepared. Experimental results for these plates showed that location and size of defect could be detected correctly by both of ESPI and Shearography.

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A Study on the Defect Structure of $TiO_2$ (Rutile) by Electrical Conductivity Measurements

  • Son, Jae-Cheon;Yu, In-Kyu
    • The Korean Journal of Ceramics
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    • v.2 no.3
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    • pp.131-136
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    • 1996
  • The electrical conductivity of polycrystalline TiO2 samples was measured over the temperature range 1000°-1400℃ and from 0.21 to 10-16 atm of oxygen. Based on the excellent fit observed between the theoretically derived relatin σ3=(Aσ+B)Po2-1/2+D'σ2 and the experimental conductivity data, the nonstoichimetric defect structure of TiO2 was rationalized in terms of a defect model involving quasi-free electrons and both singly and doubly ionized oxygen vacancies. The standard enthalpy of formation for the following defect reactions in TiO2. (a) OO={{{{ { 1} over {2 } }}O2(g)+VO+e'; Δ{{{{ { H}`_{o } ^{a } }}=5.15(eV) (b) OO={{{{ { 1} over {2 } }}O2(g)+VO+2e'; Δ{{{{ { H}`_{0 } ^{ a} }}=6.30(eV) (c) VO=VO+e'; Δ{{{{ { H}`_{0 } ^{a } }}=1.15(eV) were determined from the temperature dependence of A and B obtained from the above relation and from the experimental expression between the electron mobility and temperature. The electrical conductivity of TiO2 in air below approximately 950℃ appears, on the basis of this investigation, to be impurity controlled due to the presence of aluminum rather than intrinsic conduction.

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STS Defect Structure Diagonis through the Infrared Thermography Mechanism and Flex-PDE Thermal Analysis (적외선 열화상 메카니즘과 Flex-PDE 열해석을 통한 STS 결함구조물 진단)

  • Park, Young Hoon;Yang, Sung Mo
    • Transactions of the Korean Society of Automotive Engineers
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    • v.22 no.4
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    • pp.20-29
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    • 2014
  • This research aims to study the new paradigm of NDE measurement which allows the identification of defect locations and sizes of a certain structure by measuring its surface temperature after applying heat. STS which has a certain defect is applied by the heat of 70000W by a heater. Its difference of STS surface temperature is measured by using Infrared thermography. The estimated result of STS experiment and that of theoretical analysis of Flex-PDE are compared and analyzed to diagnose STS defect. Moreover, this study can save time and money and improve accuracy in contrast to the existing ultrasonic NDE experiment. In addition, the new paradigm of NDT/NDE by reverse-engineering will be valid if the data of thermal analysis and temperature distribution from the specifications of many materials is accumulated and verified.