• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.408-409
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• 2006

The polycrystalline 3C-SiC thin films heteroepitaxially grown by LPCVD method using single precursor 1. 3-disilabutane at $850^{\circ}C$. The crystallinity of the 3C-SiC thin film. was analyzed by XPS. Residual strain was investigated by Raman scattering. The surface morphology and voids between SiC and $SiO_2$ were measured by SEM. The grown poly 3C-SiC thin film is very good crystalline quality, surface like mirror, and low defect and strain. Therefore, the polycrystalline 3C-SiC is suitable for harsh environment MEMS applications.

• Journal of Korea Foundry Society
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• v.41 no.5
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• pp.434-444
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• 2021

This study investigated the overall dependence of the tensile properties of Al-Si alloys on the distribution aspect of a eutectic Si particle in terms of defect susceptibility to the effective void area fraction, referring to the sum of pre-existing microvoids and the damage evolution of the Si particle. The network morphology of as-cast Al-xSi (x=2,5,8,11) alloys was modified to a granular type via a T4 treatment, after which a computational topography (CT) analysis and scanning electron microscope (SEM) observations were utilized to evaluate the size and distribution of the microvoids. The CT and SEM analyses indicated that the main cracks grow along local regions that possess the highest porosity level. The local plastic deformation around the microvoids and the distribution aspect of the microvoids induced a practical difference between the iso-volumetric CT measurement and the SEM fractography outcomes. The results demonstrated that the overall dependence of the ultimate tensile strength (UTS) and elongation on the effective void area fraction is more sensitive to the variation of the area fraction of the Si particle in the network morphology than in the granular type; this is due to the sequential damage evolution of the neighboring Si particles in the eutectic Si colony.

• Clinical and Experimental Reproductive Medicine
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• v.19 no.1
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• pp.71-79
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• 1992

In vitro fertilization and embryo transfer (IVF & ET) is widely used for the males with subnormal or abnormal semen quality, as this was recommended in view of the relatively small numbers of spermatozoa required for fertilization and subsequent pregnancies could be obtained. The aim of this study is to know how the various functional parameters of spermatozoa in semen analysis affect the outcome IVF. This study was carried out between 1988-1989, with male factor patients selected on the basis of the semen quality. The selection criteria was based upon the mean values of concentration,% motility and % normal morphology from at least two semen analysis. There is a significant decrease in the fertilization and embryo transfer rates in the study group compared with control group (35.9% vs. 68% and 48.6% vs. 85.5% respectively), however, there was no significant difference in the pregnancy or delivery rates (19.6% vs. 21.4% and 60.0% vs. 62.5% respectively) per embryo transfer cycles. Fertilization rate is variously affected by the type and degree of sperm defect. No pregnancy was occurred in triple defect group and asthenoteratospermia group. There is no significant increase in the abortion rate in the male factor group. Improvement have to be made with the fertilization rate, as the pregnancy rate per OPU cycle in male factor group is still lower than that of normal group (9.5% vs. 18.3%). In conclusion, IVF can be used as a treatment for male factor infertility and the preparation of the semen sample can be modified to improve sperm recovery and obtain fertilization from abnormal semen samples.

• Journal of Microbiology and Biotechnology
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• v.18 no.2
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• pp.242-247
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• 2008

In the fungal pathogen Candida albicans, the yeast-to-hyphal transition occurs in response to a broad range of environmental stimuli and is considered to be a major virulence factor. To address whether the zinc homeostasis affects the growth or pathogenicity of C. albicans, we functionally characterized the zinc-finger protein Csr1 during filamentation. The deduced amino acid sequence of Csr1 showed a 49% similarity to the zinc-specific transcription factor, Zap1 of Saccharomyces cerevisiae. Sequential disruptions of CSR1 were carried out in diploid C. albicans. The csr1/csr1 mutant strain showed severe growth defects under zinc-limited growth conditions and the filamentation defect under hypha-inducing media. The colony morphology and the germ-tube formation were significantly affected by the csr1 mutation. The expression of the hyphae-specific gene HWP1 was also impaired in csr1/csr1 cells. The C. albicans homologs of ZRTl and ZRT2, which are zinc-transporter genes in S. cerevisiae, were isolated. High-copy number plasmids of these genes suppressed the filamentation defect of the csr1/csr1 mutant strain. We propose that the filamentation phenotype of C. albicans is closely associated with the zinc homeostasis in the cells and that Csr1 plays a critical role in this regulation.

• Nuclear Engineering and Technology
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• v.52 no.6
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• pp.1243-1251
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• 2020

Irradiation-induced damage of binderless nanoporous-isotropic graphite (NPIG) prepared by isostatic pressing of mesophase carbon microspheres for molten salt reactor was investigated by 3.0 MeV He⁺ irradiation at room temperature and high temperature of 600 ℃, and IG-110 was used as the comparation. SEM, TEM, X-ray diffraction and Raman spectrum are used to characterize the irradiation effect and the influence of temperature on graphite radiation damage. After irradiation at room temperature, the surface morphology is rougher, the increase of defect clusters makes atom flour bend, the layer spacing increases, and the catalytic graphitization phenomenon of NPIG is observed. However, the density of defects in high temperature environment decreases and other changes are not obvious. Mechanical properties also change due to changes in defects. In addition, SEM and Raman spectra of the cross section show that cracks appear in the depth range of the maximum irradiation dose, and the defect density increases with the increase of irradiation dose.

• Journal of Microbiology
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• v.45 no.3
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• pp.227-233
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• 2007

In budding yeast, septin plays as a scaffold to recruits protein components and regulates crucial cellular events including bud site selection, bud morphogenesis, Cdc28 activation pathway, and cytokinesis. Phosphorylation of Bni5 isolated as a suppressor for septin defect is essential to Swe1-dependent regulation of bud morphogenesis and mitotic entry. The mechanism by which Bni5 regulates normal septin function is not completely understood. Here, we provide evidence that Bni5 phosphorylation is important for interaction with septin component Cdc11 and for timely delocalization from septin filament at late mitosis. Phosphorylation-deficient bni5-4A was synthetically lethal with $hof1{\Delta}$. bni5-4A cells had defective structure of septin ring and connected cell morphology, indicative of defects in cytokinesis. Two-hybrid analysis revealed that bni5-4A has a defect in direct interaction with Cdc11 and Cdc12. GFP-tagged bni5-4A was normally localized at mother-bud neck of budded cells before middle of mitosis. In contrast, at large-budded telophase cells, bni5-4A-GFP was defective in localization and disappeared from the neck approximately 2 min earlier than that of wild type, as evidenced by time-lapse analysis. Therefore, earlier delocalization of bni5-4A from septin filament is consistent with phosphorylation-dependent interaction with the septin component. These results suggest that timely de localization of Bni5 by phosphorylation is important for septin function and regulation of cytokinesis.

• Journal of Microbiology and Biotechnology
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• v.18 no.4
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• pp.631-638
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• 2008

Tandem affinity purification (TAP) method combined with LC-MS/MS is the most accurate and reliable way to study the interaction of proteins or proteomics in a genome-wide scale. For the first time, we used a TAP-tag as a mutagenic tool to disrupt protein interactions at the specific site. Although lots of commonly used mutational tools exist to study functions of a gene, such as deletional mutations and site-directed mutagenesis, each method has its own demerit. To test the usefulness of a TAP-tag as a mutagenic tool, we applied a TAP-tag to RNA polymerase II, which is the key enzyme of gene expression and is controlled by hundreds of transcription factors even to transcribe a gene. Our experiment is based on the hypothesis that there will be interrupted interactions between Pol II and transcription factors owing to the TAP-tag attached at the C-terminus of each subunit of Pol II, and the abnormality caused by interrupted protein interactions can be observed by measuring a cell-cycle of each yeast strain. From ten different TAP-tagged strains, Rpb7- and Rpb12-TAP-tagged strains show severe defects in growth rate and morphology. Without a heterodimer of Rpb4/Rpb7, only the ten subunits Pol II can conduct transcription normally, and there is no previously known function of Rpb7. The observed defect of the Rpb7-TAP-tagged strain shows that Rpb7 forms a complex with other proteins or compounds and the interruption of the interaction can interfere with the normal cell cycle and morphology of the cell and nucleus. This is a novel attempt to use a TAP-tag as a proteomic tool to study protein interactions.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.217-217
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• 2016

The amorphous InGaZnO (a-IGZO) is widely accepted as a promising channel material for thin-film transistor (TFT) applications owing to their outstanding electrical properties [1, 2]. However, a-IGZO TFTs have still suffered from their bias instability with illumination [1-4]. Up to now, many researchers have studied the sub-gap density of states (DOS) as the root cause of instability. It is well known that defect states can influence on the performances and stabilities of a-IGZO TFTs. The defects states should be closely related with the deposition condition, including sputtering power, and pressure. Nevertheless, it has not been reported how these defects are created during conventional RF magnetron sputtering. In general, during conventional RF magnetron sputtering process, negative oxygen ions (NOIs) can be generated by electron attachment in oxygen atom near target surface and then accelerated up to few hundreds eV by a self-bias; at this time, the high energy bombardment of NOIs induce defects in oxide thin films. Recently, we have reported that the properties of IGZO thin films are strongly related with effects of NOIs which are generated during the sputtering process [5]. From our previous results, the electrical characteristics and the chemical bonding states of a-IGZO thin films were depended with the bombardment energy of NOIs. And also, we suggest that the deep sub-gap states in a-IGZO as well as thin film properties would be influenced by the bombardment of high energetic NOIs during the sputtering process.In this study, we will introduce our novel technology named as Magnetic Field Shielded Sputtering (MFSS) process to prevent the NOIs bombardment effects and present how much to be improved the properties of a-IGZO thin film by this new deposition method. We deposited a-IGZO thin films by MFSS on SiO2/p-Si and glass substrate at various process conditions, after which we investigated the morphology, optical and electrical properties of the a-IGZO thin films.

• Polymer(Korea)
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• v.27 no.4
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• pp.313-322
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• 2003

The morphology of poly(ethylene terephthalate) (PET)/poly(m-xylene adipamide) (MXD-6) blends, which was prepared by adding compatibilizer and interchange reaction agent, was investigated. The morphological change in the stretched blend films was also studied. The stretched film showed a dispersed MXD-6 fibril. This fibril became finer with increasing draw ratio (DR). The addition of compatibilizer and interchange reaction agent had no effect on the improvement of interfacial adhesion but caused a defect between the continuous phase and the dispersed phase, leading to the formation of irregular fibril. The change in the superstructure of blends with composition and draw ratio was examined with light scattering (LS). The H$\sub$v/ LS patterns showed a double-cross type pattern consisting of a broad rod-like pattern and a sharp cross streak. On the basis of the model calculation of the H$\sub$v/ pattern, it was found that the appearance of the double-cross type pattern was attributed to the stacking of crystals oriented along the draw direction. The crystals were gradually oriented to the stretching direction with draw ratio. As a result, the high level of orientation was obtained fur the sample of draw ratio is 6.0.

• Tribology and Lubricants
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• v.20 no.6
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• pp.306-313
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• 2004

Many of the current development in surface modification engineering are focused on multilayered coatings, which have the potential to improve the tribological properties. Four different multilayered coatings were deposited on AISI D2 steel in this study. The prepared samples are designed as $WC-Ti_{0.6}Al_{0.4}N,\;WC-Ti_{0.53}Al_{0.47}N,\;WC-Ti_{0.5}Al_{0.5}N\;and\;WC-Ti_{0.43}Al_{0.57}N$. The multilayered coatings were investigated with respect to coating surface and cross-sectional morphology, roughness, adhesion, hardness, porosity and tribological behaviors. Especially, wear tests of four multilayered coatings were performed by using a ball-on-disc configuration with a linear sliding speed of 0.017 m/sec and a normal load of 5.38 N load. The tests were carried out at room temperature in air by employing AISI 52100 steel ball $(H_R\;=\;66) $ having a diameter of 10 mm. The surface morphology, and topography of the wear scars of samples and balls have been determined by using scanning electron spectroscopy (SEM). Also, wear mechanism was determined by using SEM coupled with energy-dispersive spectroscopy (EDS). Results have showed an improved wear resistance of the $WC-Ti_{1-x}Al_xN$coatings with increasing of Al (aluminum) concentration.