• Title/Summary/Keyword: defect engineering

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Fused Illumination Mechanism Design for Steel Plate Surface Inspection (철강 후판의 표면 검사를 위한 융합조명계 설계)

  • Cho, Eun Doek;Kim, Gyung Bum
    • Journal of the Semiconductor & Display Technology
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    • v.16 no.3
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    • pp.14-19
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    • 2017
  • In this paper, a fused illumination mechanism for detecting surface defects in steel plates was designed by applying the discriminant function that can differentiate the contrast of defects and non-defects. There is low contrast, non-uniformity, and no feature characteristics in steel plate surfaces. The fused illumination mechanism is devised, based on those characteristics. Optimum parameters of the fused illumination mechanism are determined by applying the discriminant function after acquiring the defect image in steel plate surfaces. The performance of the proposed mechanism is verified by experminets.

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A Study on Phase Detection for Metal Defects Inspection (금속 결함 검사를 위한 위상 검출에 관한 연구)

  • Ko, You-Hak;Kim, Nam-Ho
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2019.05a
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    • pp.600-602
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    • 2019
  • Metals are used in a variety of industrial sites and daily life. Metals are often used in machinery, automobile parts, wires, and robots. Metal causes small damage to the metal surface for a variety of reasons, such as the processing process and the user's operating environment. In this paper, phase detection for the inspection of defects in metals has been implemented. Using the electrical conductivity of metal, a circuit whose phase varies with the depth and size of the defect, and with the changed phase, the depth and size of the defect can be estimated.

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Characteristics of Graphene Quantum Dot-Based Oxide Substrate for InGaN/GaN Micro-LED Structure (InGaN/GaN Micro-LED구조를 위한 그래핀 양자점 기반의 산화막 기판 특성)

  • Hwang, Sung Won
    • Journal of the Semiconductor & Display Technology
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    • v.20 no.3
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    • pp.167-171
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    • 2021
  • The core-shell InGaN/GaN Multi Quantum Well-Nanowires (MQW-NWs) that were selectively grown on oxide templates with perfectly circular hole patterns were highly crystalline and were shaped as high-aspect-ratio pyramids with semi-polar facets, indicating hexagonal symmetry. The formation of the InGaN active layer was characterized at its various locations for two types of the substrates, one containing defect-free MQW-NWs with GQDs and the other containing MQW-NWs with defects by using HRTEM. The TEM of the defect-free NW showed a typical diode behavior, much larger than that of the NW with defects, resulting in stronger EL from the former device, which holds promise for the realization of high-performance nonpolar core-shell InGaN/GaN MQW-NW substrates. These results suggest that well-defined nonpolar InGaN/GaN MQW-NWs can be utilized for the realization of high-performance LEDs.

Linear System Depth Detection using Retro Reflector for Automatic Vision Inspection System (자동 표면 결함검사 시스템에서 Retro 광학계를 이용한 3D 깊이정보 측정방법)

  • Joo, Young Bok
    • Journal of the Semiconductor & Display Technology
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    • v.21 no.4
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    • pp.77-80
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    • 2022
  • Automatic Vision Inspection (AVI) systems automatically detect defect features and measure their sizes via camera vision. It has been populated because of the accuracy and consistency in terms of QC (Quality Control) of inspection processes. Also, it is important to predict the performance of an AVI to meet customer's specification in advance. AVI are usually suffered from false negative and positives. It can be overcome by providing extra information such as 3D depth information. Stereo vision processing has been popular for depth extraction of the 3D images from 2D images. However, stereo vision methods usually take long time to process. In this paper, retro optical system using reflectors is proposed and experimented to overcome the problem. The optical system extracts the depth without special SW processes. The vision sensor and optical components such as illumination and depth detecting module are integrated as a unit. The depth information can be extracted on real-time basis and utilized and can improve the performance of an AVI system.

A Study on the Battery Cell Defect Analysis Method Using the GAN Model (GAN 모델을 이용한 배터리 셀 불량 분석 기법에 관한 연구)

  • Kim, Jeyeon;Park, Hangyu;Yoon, Hyesu;Kang, Seongkyeong
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2022.10a
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    • pp.168-169
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    • 2022
  • As the electric vehicle market has grown rapidly, the battery market has grown exponentially. Due to the gap between the generation speed of quality control technology and battery mass production speed for batteries mounted on electric vehicles, many durability problems have arisen for batteries. Most accidents are caused by electrical factors, but there is no technology to quickly inspect them. In this paper, we are going to propose a quick analysis of battery cell defects using the GAN model.

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Safety diagnosis process for deteriorated buildings using a 3D scan-based reverse engineering model

  • Jae-Min Lee;Seungho Kim;Sangyong Kim
    • Smart Structures and Systems
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    • v.31 no.1
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    • pp.79-88
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    • 2023
  • As the number of deteriorated buildings increases, the importance of safety diagnosis, maintenance, and the repair of buildings also increases. Traditionally, building condition assessments are performed by one person or one company and various inspections are needed. This entails a subjective judgment by the inspector, resulting in different assessment results, poor objectivity and a lack of reliability. Therefore, this study proposed a method to bring about accurate grading results of building conditions. The limitations of visual inspection and condition assessment processes previously conducted were identified by reviewing existing studies. Building defect data was collected using the reverse-engineered three-dimensional (3D) model. The accuracy of the results was verified by comparing them with the actual evaluation results. The results show a 50% time-saving to the same area with an accuracy of approximately 90%. Consequently, defect data with high objectivity and reliability were acquired by measuring the length, area, and width. In addition, the proposed method can improve the efficiency of the building diagnosis process.

Expansion of Thin-Film Transistors' Threshold Voltage Shift Model using Fractional Calculus (분수계 수학을 사용한 박막트랜지스터의 문턱전압 이동 모델 확장)

  • Taeho Jung
    • Journal of the Semiconductor & Display Technology
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    • v.23 no.2
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    • pp.60-64
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    • 2024
  • The threshold voltage shift in thin-film transistors (TFTs) is modeled using stretched-exponential (SE) and stretched-hyperbola (SH) functions. These models are derived by introducing empirical parameters into reaction rate equations that describe defect generation or charge trapping caused by hydrogen diffusion in the dielectric or interface. Separately, the dielectric relaxation phenomena are also described by the same reaction rate equations based on defect diffusion. Dielectric relaxation was initially modeled using the SE model, and various models have been proposed using fractional calculus. In this study, the characteristics of the threshold voltage shift and the dielectric relaxation phenomena are compared and analyzed to explore the applicability of analytical models used in the field of dielectric relaxation, in addition to the conventional SE and SH models.

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Directed Assembly of Block Copolymers for Defect-Free Nanofabrication (블록공중합체 자기조립제어를 통한 무결함 나노구조제작)

  • Shin, Dong-Ok;Jeong, Seong-Jun;Kim, Bong-Hoon;Lee, Hyung-Min;Park, Seung-Hak;Xia, Guodong;Nghiem, Quoc Dat;Kim, Sang-Ouk
    • Korean Chemical Engineering Research
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    • v.46 no.1
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    • pp.1-6
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    • 2008
  • Block copolymers spontaneously assemble into various nanoscale structures such as spheres, cylinders, and lamellar structures according to the relative volumn ratio of each macromolecular block and their overall molecular weights. The self-assembled structures of block copolymer have been extensively investigated for the applications such as nanocomposites, photonic crystals, nanowires, magnetic-storage media, flash memory devices. However, the naturally formed nanostructures of block copolymers contain a high density of defects such that the practical applications for nanoscale devices have been limited. For the practical application of block copolymer nanostructures, a robust process to direct the assembly of block copolymers in thin film geometry is required to be established. To exploit self-assembly of block copolymer for the nanotechnology, it is indispensible to fabricate defect-free self-assembled nanostructure over an arbitrarily large area.