• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.284-284
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• 2016

Topological insulator (TI) is a bulk-insulating material with topologically protected Dirac surface states in the band gap. In particular, $Bi_2Se_3$ attracted great attention as a model three-dimensional TI due to its simple electronic structure of the surface states in a relatively large band gap (~0.3 eV). However, experimental efforts using $Bi_2Se_3$ have been difficult due to the abundance of structural defects, which frequently results in the bulk conduction being dominant over the surface conduction in transport due to the bulk doping effects of the defect sites. One promising approach in avoiding this problem is to reduce the structural defects by heteroepitaxially grow $Bi_2Se_3$ on a substrate with a compatible lattice structure, while also preventing surface degradation by encapsulating the pristine interface between $Bi_2Se_3$ and the substrate in a clean growth environment. A particularly promising choice of substrate for the heteroepitaxial growth is hexagonal boron nitride (h-BN), which has the same two-dimensional (2D) van der Waals (vdW) layered structure and hexagonal lattice symmetry as $Bi_2Se_3$. Moreover, since h-BN is a dielectric insulator with a large bandgap energy of 5.97 eV and chemically inert surfaces, it is well suited as a substrate for high mobility electronic transport studies of vdW material systems. Here we report the heteroepitaxial growth and characterization of high quality topological insulator $Bi_2Se_3$ thin films prepared on h-BN layers. Especially, we used molecular beam epitaxy to achieve high quality TI thin films with extremely low defect concentrations and an ideal interface between the films and substrates. To optimize the morphology and microstructural quality of the films, a two-step growth was performed on h-BN layers transferred on transmission electron microscopy (TEM) compatible substrates. The resulting $Bi_2Se_3$ thin films were highly crystalline with atomically smooth terraces over a large area, and the $Bi_2Se_3$ and h-BN exhibited a clear heteroepitaxial relationship with an atomically abrupt and clean interface, as examined by high-resolution TEM. Magnetotransport characterizations revealed that this interface supports a high quality topological surface state devoid of bulk contribution, as evidenced by Hall, Shubnikov-de Haas, and weak anti-localization measurements. We believe that the experimental scheme demonstrated in this talk can serve as a promising method for the preparation of high quality TI thin films as well as many other heterostructures based on 2D vdW layered materials.

• Journal of the Korean Association of Geographic Information Studies
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• v.4 no.4
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• pp.61-71
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• 2001

In these days, surveying instruments are developing rapidly and the precision is improving continuously. The reappearance of three dimensional terrains of a great precision are possible and the calculation of the area or the volume has a high precision due to the development of the technique of the spatial information system using computer. But actually, in construction site they calculate two-dimensional area using the traditional method, plane table surveying, planimeter, and then get ground surface area through timing the slope correction factor. In this study, I show the defect and inefficiency of the calculation of the area by the traditional methods and survey the area with Electronic Distance Measuring equipment and GPS instrument. With these data, we made the three dimensional terrain model and calculated two-dimensional area and ground surface area. After that, I compared areas that calculated by algorithm method of irregular triangle and analysis of grid method with standardizing the area that calculated by the traditional method. Finally, I suggested more effective and precise method in calculating ground surface area.

• Journal of the Institute of Electronics Engineers of Korea SP
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• v.47 no.6
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• pp.39-47
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• 2010

A research of image-based articulated pose estimation has some problems such as detection of human feature, precise pose estimation, and real-time performance. In particular, various methods are currently presented for recovering many joints of human body. We propose the novel numerical inverse kinematics improved with the UKF(unscented Kalman filter) in order to estimate the human pose in real-time. An existing numerical inverse kinematics is required many iterations for solving the optimal estimation and has some problems such as the singularity of jacobian matrix and a local minima. To solve these problems, we combine the UKF as a tool for optimal state estimation with the numerical inverse kinematics. Combining the solution of the numerical inverse kinematics with the sampling based UKF provides the stability and rapid convergence to optimal estimate. In order to estimate the human pose, we extract the interesting human body using both background subtraction and skin color detection algorithm. We localize its 3D position with the camera geometry. Next, through we use the UKF based numerical inverse kinematics, we generate the intermediate joints that are not detect from the images. Proposed method complements the defect of numerical inverse kinematics such as a computational complexity and an accuracy of estimation.

• Journal of Broadcast Engineering
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• v.12 no.2
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• pp.80-92
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• 2007

IPTV Services that is representative union service of broadcasting and telecommunication need guarantee of QoS, efficiency of multicasting, and hish bandwidth on the network. Because typical TDM based metro transport network was designed by transporting fixed voice traffic with stable and recovering method, it has a defect of bottleneck and a waste of bandwidth for acceptance of data traffic with burst feature and then all of data are treated equally at the transport network because it cannot classify between advanced high end service and best effort low end service. for completely resolving this kind of problem about increasing burst traffic and QoS issues, firstly we need to new design for transport network. This paper presents transformation method from TDM based metro transport network to packet based transport network and advantage and effectiveness of packet based transport network and also indicates technical factor and characters about method of packet transport system. As a result of research, the Packet Transport System, which is a transmission network for packet delivery, take in not only a specific character of legacy TDM but QoS, Multicast and high bandwidth, then, it is able to keep an effective bandwidth and a stabilized performance of packet transmissions. Additionally, if a fault be occurred on an optical link, the system is able to guarantee a differential QoS by an each service class using an algorithm to make certain of a traffic existence and contain a protective mechanism.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.18 no.6
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• pp.395-399
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• 2017

The LPI fuel filter housings used in automobiles were made from conventional die castings but have recently been developed by cold forging to improve the weight and durability. On the other hand, a sink may develop at the core of the forged product due to the resulting T-shape, which not only reduces the aesthetics, but also increases the post-processing cost of the product. Therefore, this research focused on methods to predict and mitigate sink development and progression during the T-shape forging process. Finite element analysis of the forging process was first performed to determine the optimal initial workpiece devoid of burrs and underfills. An accurate sink prediction was then obtained via metal flow analysis, which was a result of the finite element simulation. Through finite element analysis, it was confirmed that sink development is a product of the differences in nodal velocities arising from the T-shaped forging process. Consequently, a pad was inserted beneath the sink to minimize these velocity differences. The results yielded significant improvement with regard to the sink defect. This method was practically applied to an industrial site to validate the sink improvement.

• Transactions on Electrical and Electronic Materials
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• v.1 no.1
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• pp.26-31
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• 2000

The ~1540 nm $^4$ $I_{13}$ 2/ longrightarro $w^4$ $I_{15}$ 2/ emissions of E $r^{3+}$ in Er-implanted GaN annealed at temperatures in the 400 to 100$0^{\circ}C$ range were investigated to gain a better understanding of the formation and dissociation processes of the various E $r^{3+}$ sites and the recovery of damage caused by the implantation with increasing annealing temperature ( $T_{A}$).The monotonic increase in the intensity of the broad defect photoluminescence(PL) bands with incresing $T_{A}$ proves that these are stable radiative recombination centers introduced by the implantation and annealing process. Theser centers cannot be attributed to implantation-induced damage that is removed by post-implantation annealing. Selective wavelength pumpling of PL spectra at 6K reveals the existence of at least nine different E $r^{3+}$ sites in this Er-implanted semiconductor. Most pf these E $r^{3+}$ PL centers are attributed to complexed of Er atoms with defects and impurities which are thermally activated at different $T_{A}$. Only one of the nine observed E $r^{3+}$ PL centers can be pumped by direct 4f absorption and this indicates that it is highest concentration E $r^{3+}$ center and it represents most of the optically active E $r^{3+}$ in the implanted sample. The fact that this E $r^{3+}$ center cannot be strongly pumped by above-gap light or broad band below-gap absorption indicates that it is an isolated center, i.e not complexed with defects or impurities, The 4f-pumped P: spectrum appears at annealing temperatures as low as 40$0^{\circ}C$, and although its intensity increase monotonically with increasing $T_{A}$ the wavelengths and linewidths of its characteristic peaks asre unaltered. The observation of this high quality E $r_{3+}$PL spectrum at low annealing temperatures illustrates that the crystalline structure of GaN is not rendered amorphous by the ion implantation. The increase of the PL intensities of the various E $R_{3+}$sites with increasing $T_{A}$is due to the removal of competing nonradiative channels with annealing. with annealing.annealing.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.264-264
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• 2010

Single-walled carbon nanotubes (SWCNTs) were grown on a Si wafer by using thermal chemical vapor deposition (t-CVD). We investigated the effect of the catalyst deposition rate on the types of CNTs grown on the substrate. In general, smaller islands of catalyst occur by agglomeration of a catalyst layer upon annealing as the catalyst layer becomes thinner, which results in the growth of CNTs with smaller diameters. For the same thickness of catalyst, a slower deposition rate will cause a more uniformly thin catalyst layer, which will be agglomerated during annealing, producing smaller catalyst islands. Thus, we can expect that the smaller-diameter CNTs will grow on the catalyst deposited with a lower rate even for the same thickness of catalyst. The 0.5-nm-thick Fe served as a catalyst, underneath which Al was coated as a catalyst support as well as a diffusion barrier on the Si substrate. The catalyst layers were. coated by using thermal evaporation. The deposition rates of the Al and Fe layers varied to be 90, 180 sec/nm and 70, 140 sec/nm, respectively. We prepared the four different combinations of the deposition rates of the AI and Fe layers. CNTs were synthesized for 10 min by flowing 60 sccm of Ar and 60 sccm of $H_2$ as a carrier gas and 20 sccm of $C_2H_2$ as a feedstock at 95 torr and $810^{\circ}C$. The substrates were subject to annealing for 20 sec for every case to form small catalyst islands prior to CNT growth. As-grown CNTs were characterized by using field emission scanning electron microscopy, high resolution transmission electron microscopy, Raman spectroscopy, UV-Vis NIR spectroscopy, and atomic force microscopy. The fast deposition of both the Al and Fe layers gave rise to the growth of thin multiwalled CNTs with the height of ${\sim}680\;{\mu}m$ for 10 min while the slow deposition caused the growth of ${\sim}800\;{\mu}m$ high SWCNTs. Several radial breathing mode (RBM) peaks in the Raman spectra were observed at the Raman shifts of $113.3{\sim}281.3\;cm^{-1}$, implying the presence of SWCNTs (or double-walled CNTs) with the tube diameters 2.07~0.83 nm. The Raman spectra of the as-grown SWCNTs showed very low G/D peak intensity ratios, indicating their low defect concentrations.

• Journal of the Korea Concrete Institute
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• v.17 no.3 s.87
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• pp.329-334
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• 2005

The use of Polymer Concrete (PC) is growing very rapidly in many structural and construction applications such as box culverts, hazardous waste containers, trench lines, floor drains and the repair and overlay of damaged cement concrete surfaces in pavements, bridges, etc. However, PC has a defect economically because resin which be used for binder is expensive. Therefore the latest research is being progressed to replace existing resin with new resin which can reduce the high cost. Here, Polymer concrete using the recycled PET(polyethylene terephthalate) has some merits such as decrease of environmental destruction, decrease of environmental pollution and development of new construction materials. The variables of this study are amount of resin, curing condition and maximum size of coarse aggregate to find out mechanic properties of this. Stress-strain curve was obtained using MTS equipment by strain control. The results indicated that modulus of elasticity was increased gradually in an ascending branch of curve, as an increase of resin content. Compressive strength was the highest for resin content of $13\%$. And Compressive strength was increased as maximum size of coarse aggregate increases. The strain at maximum stress increases with an increase of resin content and size of coarse aggregate. For the descending branch of stress-strain curve the brittle fracture was decreased when it was cured at the room temperature compared to high temperature.

• Journal of the Korean Electrochemical Society
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• v.15 no.1
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• pp.27-34
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• 2012

$Li_3V_2(PO_4)_3$/carbon composite materials are synthesized from a sucrose-containing precursor. Amorphous $Li_3V_2(PO_4)_3/C$ (a-LVP/C) and crystalline $Li_3V_2(PO_4)_3/C$ (c-LVP/C) are obtained by calcining at $600^{\circ}C$ and $800^{\circ}C$, respectrively, and electrochemical performance as the negative electrode for lithium secondary batteries is compared for two samples. The a-LVP electrode shows much larger reversible capacity than c-LVP, which is ascribed to the spatial $Li^+$ channels and flexible structure of amorphous material. In addition, this electrode shows an excellent rate capability, which can be accounted for by the facilitated $Li^+$ diffusion through the defect sites. The sloping voltage profile is another advantageous feature for easy SOC (state of charge) estimation.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.13 no.5
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• pp.121-133
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• 2013

Defect-free transfer service on the Next-generation wireless network extensive roaming mobile node (MN) to provide efficient mobility management has become very important. MIPv6(Mobility IPv6) is one of mobility management scheme proposed by IETF(Internet Engineering Task Force), and IPv6-based mobility management techniques have been developed in various forms. One of each management techniques, IPv6-based mobility management techniques for PMIPv6 (MIPv6) system to improve the performance of a variety of F-PMIPv6 (Fast Handover for Proxy MIPv6) is proposed. However, the F-PMIPv6 is cannot be excellent than PMIPv6 in all scenarios. Therefor, to select a proper mobility management scheme between PMIPv6 and F-PMIPv6 becomes an interesting issue, for its potenrials in enhancing the capacity and scalability of the system. In this paper, we develop an analytical model to analyze the applicability of PMIPv6 and F-PMIPv6. Based on this model, we design an Secure Smart Mobility Support(SSM) scheme that selects the better alternative between PMIPv6 and F-PMIPv6 for a user according to its changing mobility and service characteristics. When F-PMIPv6 is adopted, SSM chooses the best mobility anchor point and regional size to optimize the system performance. Numerical results illustrate the impact of some key parameters on the applicability of PMIPv6 and F-PMIPv6. Finally, SSM has proven even better result than PMIPv6 and F-PMIPv6.