• Honam Mathematical Journal
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• v.34 no.4
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• pp.519-531
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• 2012

Let ${\sigma}_s(N)={\sum}_{d{\mid}N}d^s$. Next, the convolution sums ${\sum}_{k<N/3}{\sigma}_1(3^mk){\sigma}_1(2^n(N-3k))$, ${\sum}_{<N/3}{\sigma}_1(2^mk){\sigma}_1(3^n(N-3k))$, etc., are evaluated for all $N{\in}\mathbb{N}$ with $m$, $n{\in}\mathbb{N}{\cup}\{0\}$.

• Korean Journal of Food Science and Technology
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• v.32 no.4
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• pp.974-978
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• 2000

The vane method was used to measure yield stresses of five commercial kochujang samples under a controlled shear-rate operating condition. Magnitudes of vane yield stress were higher than those of yield stress using Casson model with a concentric cylinder viscometer. Magnitudes of vane yield stresses showed great differences between the static $({\sigma}_s)$ and dynamic yield stresses $({\sigma}_d)$ of kochujang samples with undisturbed structure (UDS) and with broken down structure (BDS). A dimensionless yield number $(N{\sigma}_o)$ was determined from the ratio of ${\sigma}s$ to ${\sigma}d$ in order to describe the existence of temporary structure of kochujang.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.12
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• pp.1139-1147
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• 2011

In this paper, a design and fabrication of GaN power amplifier for the S-band frequency (400 MHz bandwidth) are presented. A combining path using ${\lambda}$/4 transmission line is implemented for GaN pallet amp. Both the combiner with suspended-type transmission structure for low-loss and the suspended stripline coupler with aperture coupling for auto gain control are realized for achieving high-power high-efficiency amplifier. Proposed power amplifier demonstrated a 5 kW peak output power, 27.8 % efficiency, 67 dB gain without ALC and a 4 kW peak output power, 25.5 % efficiency, 0.1 dB droop at 200 usec pulse width and 10 % duty with ALC.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.12
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• pp.1-9
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• 2000

A new method, the external resistance method (ERM method), is proposed for accurate extraction of the gate bias-dependent effective channel carrier mobility (${\mu}_{eff}$) and separated parasitic source/drain resistances ($R_S$ and $R_D$) of n-channel MOSFET's. The proposed ERM method is applied to n-channel LDD MOSFETs with two different gate lengths ($W_m/L_m=30{\mu}m/0.6{\mu}m,\;30{\mu}m/1{\mu}m$) in the linear mode of current-voltage characteristics ($I_D-V_{GS},\;V_{DS}$). We also considered gate voltage dependence of separated $R_2$ and $R_D$ in the accurate modeling and extraction of effective channel carrier mobility. Good agreement of experimental data is observed in submicron n-channel LDD MOSFETs. Combining with capacitance-voltage characteristics, the ERM method is expected to be very useful for accurate and efficient extraction of ${\mu}_{eff},\;R_D,\;R_S$, and other characteristic parameters in both symmetric and asymmetric structure MOSFET's in which parasitic resistances are critical to the improvement of high speed performance and reliability.

• Bulletin of the Korean Mathematical Society
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• v.33 no.3
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• pp.419-425
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• 1996

Let ${X, X_n, n \geq 1}$ be a sequence of independent and identically distributed(i.i.d) random variables with EX = 0 and $E$\mid$X$\mid$^p < \infty$ for some $p \geq 1$. Let ${a_{ni}, 1 \leq i \leq n, n \geq 1}$ be a triangular arrary of constants. The almost sure(a.s) convergence of weighted sums $\sum_{i=1}^{n} a_{ni}X_i$ can be founded in Choi and Sung[1], Chow[2], Chow and Lai[3], Li et al. [4], Stout[6], Sung[8], Teicher[9], and Thrum[10].

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.49 no.1
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• pp.47-52
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• 2012

A power amplifier is one of important factors for basestation's efficiency and the researches for efficency enhancement focus Doherty amplifier structure with GaN power devices in these days. A memory effect of Doherty amplifier affect operation characteristics for linearity and efficiency. This paper reports on electrothermal nonlinearity modeling and compensation for GaN Doherty amplifier's distortion. Also this paper reports on the dynamic expression of the instantaneous junction temperature as a function of the instantaneous dissipated power. We design distortion model for GaN Doherty amplifier and predistortion compensator for electrothermal memory effect from the proposed behavior model parameters. The simulations was evaluated by ADS Tools and GaN Doherty amplifier with 37dBm. The GaN Doherty amplifier with compensator enhanced about 16dB than without electrothemal memory effect compensator in 2-tone output spectrum.

• Nutrition Research and Practice
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• v.5 no.2
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• pp.132-139
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• 2011

Evidence of the association between 25-hydroxyvitamin D (25(OH)D) and metabolic syndrome (MeS) remains uncertain and incongruent. This study aimed to determine the association between 25(OH)D and MeS among Jordanian adults. A complex multistage sampling technique was used to select a national population-based household sample. The present report deals exclusively with adults aged > 18 years who had complete information on all components of MeS (n = 3,234). A structured questionnaire was used to collect all relevant information. Anthropometric, clinical, and laboratory measurements were obtained. MeS was defined according to the International Diabetes Federation (IDF) definition. Of the total, 42.0% had MeS and 31.7% had 25(OH)D < 30 ng/ml. In a stratified analysis, the prevalence of MeS did not differ significantly between subjects with low and normal 25(OH)D levels for men and women in all age groups. In the multivariate analysis, the odds of MeS were not significantly different between subjects with low and normal 25(OH)D levels (OR = 0.85, 95% CI: 0.70, 1.05, P-value = 0.133). The association between 25(OH)D and MeS remained non-significant when 25(OH)D was analyzed as a continuous variable (OR = 1.004, 95% CI; 1.000, 1.008, P = 0.057) and when analyzed based on quartiles. None of the individual components of MeS were significantly associated with 25(OH)D level. This study does not provide evidence to support the association between 25(OH)D level and MeS or its individual components. Prospective studies are necessary to better determine the roles of 25(OH)D levels in the etiology of MeS.

• Microbiology and Biotechnology Letters
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• v.22 no.6
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• pp.636-642
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• 1994

Essential amino acids involving in the catalytic mechanism of the $\beta$-D-xylosidase of Bacillus stearothermophilus were determined by chemical modification studies. Among various che- mical modifiers tested N-bromosuccinimide (NBS), $\rho$-hydroxymercurybenzoate (PHMB), N-ethylma- leimide, 1-[3-(di-ethylamino)-propyl]$-3-ethylcarbodi-imide (EDC), and Woodward's Reagent K(WRK)inactivated the enzyme, resulting in the residual activity of less than 20%. WRK reduced the enzyme activity by modifying carboxylic amino acids, and the inactivation reacion proceeded in the form of pseudo-first-order kinetics. The double-lagarithmic plot of the observed pseudo-first- order rate constant against the modifier concentration yielded a reaction order of 2, indicating that two carboxylic amino acids were essential for the enzyme activity. The $\beta$-D-xylosidase was also inactivated by N-ethylmaleimide which specifically modified a cysteine residue with a reaction order of 1, implying that one cysteine residue was important for the enzyme activity. Xylobiose protected the enzyme against inactivation by WRK and N-ethylmaleimide, revealing that carboxylic amino acids and a cysteine residue were present at the substrate-binding site of the enzyme molecule.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2009.06a
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• pp.273-274
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• 2009

• Electronics and Telecommunications Trends
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• v.27 no.4
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• pp.96-106
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• 2012

차세대 에너지 절감 반도체로 각광을 받고 있는 GaN(Gallium Nitride) 전자소자의 연구개발 동향, 특히 전력증폭기용 GaN 기술동향에 관하여 기술하였다. GaN 전자소자는 와이드 밴드갭($E_g=3.4eV$)과 고온($700^{\circ}C$) 안정성 등 재료적인 특징으로 인하여 고출력 RF(Radio Frequency) 전력증폭기와 고전력 스위칭 소자로서 큰 장점을 갖는다. 본고에서는 차세대 GaN 전력소자의 주요 특성을 소개하고 미국, 유럽, 일본을 중심으로 한 대형 국책 연구 프로젝트 분석을 통한 GaN 전력소자 연구개발 방향 및 GaN 전력소자 시장과 주요 특허 현황을 살펴보았다. 또한 국내의 주요 연구개발 현황과 현재 수행 중이거나 완료된 연구개발 과제를 간략하게 언급하였다. 이러한 연구개발 현황분석을 통하여 GaN 기술의 중요성과 함께 국산화의 시급성을 강조하고자 한다.