• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.11 no.4
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• pp.599-609
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• 2000

In this paper, sub-harmonically pumped single balanced resistive mixers are presented . Frequency bandwidth is selected for a Ku-band, which is 11.75-12.25GHz for RF, 5.375∼5.625 GHz for LO, and 1 GHz for IF signals. A rat-race hybrid is designed for the accomplishment of single balanced type. A low pass filter (LPF) with photonic band gap(PBG) structure is used for good conversion loss and unwanted harmonics suppression. Two types of mixers are suggested, which are one with no gate bias for no DC power consumption and the other with the IF amplifier for conversion gain. When a LO signal with the power of 6 dBm at 5.5 GHz is injected, a conversion loss of 12.17dB and a conversion gain of 7.83 dB are obtained for each mixer. For the both mixers , LO to RF isolation of 20 dB and LO to IF isolation of 60dB are obtained. With the RF power of -30dBm to -3dBm, the mixer shows linear characteristics region of IF. this mixer can be applied for Ku-band and other microwave communication systems.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.12 no.3
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• pp.339-345
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• 2001

In this paper, FG-CPW (Finite-Ground Coplanar Wave-Guide) balanced diode mixer is presented. Frequency bandwidth is selected for a C-band, which is 5.72~5.82 GHz for RF, 5.58~5.68 GHz for LO, and 140 MHz for IF signals. A rat-race hybrid is designed for the accomplishment of single balanced type. A low pass filter (LPF) with CPW structure is used far good conversion loss and unwanted harmonics suppression. When LO signal with the power of 4 dBm at 5.635 GHz is injected, a conversion loss of 6.2 dB is obtained for the mixer. Also, the LO to RF and LO to IF isolation of 30 dB and 40 dB are obtained, respectively. This mixer can be used in the area on wireless LAN application.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.8
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• pp.819-826
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• 2002

In this paper, the performance of Au / $Ba_{0.5}Sr_{0.5}TiO_3$ (BST) / Magnesium oxide (MgO) two-layered electrically tunable band-pass Filters (BPFs) is demonstrated. The devices consist of microstrip, coplanar waveguide (CPW), and conductor-backed coplanar waveguide (CBCPW) structures. These BST thin film band-pass filters have been designed by the 2.5 D field simulator, IE3D, Zeland Inc., and fabricated by thin film process. The simulation results, using the 2-pole microstrip, CPW, and CBCPW band-pass filters, show the center frequencies of 5.89 GHz, 5.88 GHz, and 5.69 GHz, and the corresponding insertion losses are 2.67 dB, 1.14 dB, and 1.60 dB, with 3 %, 9 %, and 7 % bandwidth, respectively. The measurement results show the center frequencies of 6.4 GHz, 6.14 GHz, and 6.04 GHz, and their corresponding insertion losses are 6 dB, 4.41 dB, and 5.41 dB, respectively, without any bias voltage. With the bias voltage of 40 V, the center frequencies for the band-pass filters are measured to be 6.61 GHz, 6.31 GHz, and 6.21 GHz, and their insertion losses are observed to be 7.33 dB, 5.83 dB, and 6.83 dB, respectively. From the experiment, the tuning range for the band-pass filters are determined as about 3 % ~ 8 %.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.169-170
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• 2006

A band pass filter for the V-band application with unique circuit and structure was designed and implemented using 2-metals, 3-BCB layers. In the mean while the effective electrical conductivity of metal layer was extracted and its value was $4{\times}10^7S/m$. The insertion loss of band pass filter at 60 GHz was 3.0 dB and group delay was below 0.1 ns.

• Elastomers and Composites
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• v.53 no.4
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• pp.226-233
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• 2018

Elastomers based on the thermoplastics are widely used in rubber industries. Thermoplastic elastomers have the advantages of an easy shaping process and elimination of recycling problems. Thermoplastic polyester elastomer (TPE) is used for making rubber bands in wearable devices and its applications are increasing. In this study, five wrist bands were designed and their mechanical behaviors were examined by computer simulation, using hyper elastic models, Mooney-Rivlin and Ogden models, and a linear elastic model. Simulation results were compared and discussed in terms of band design and material model.

• Journal of IKEEE
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• v.23 no.1
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• pp.181-187
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• 2019

In this paper, we demonstrated a power amplifier monolithic microwave integrated circuit (MMIC) for X-band radar applications. It utilizes commercial $0.25{\mu}m$ GaN-based high electron mobility transistor (HEMT) technology and delivers more than 20 W of output power. The developed GaN-based power amplifier MMIC has small signal gain of over 22 dB and saturated output power of over 43.3 dBm (21.38 W) in a pulse operation mode with pulse width of $200{\mu}s$ and duty cycle of 4% over the entire band of 9 to 10 GHz. The chip dimensions are $3.5mm{\times}2.3mm$, generating the output power density of $2.71W/mm^2$. Its power added efficiency (PAE) is 42.6-50.7% in the frequency bandwidth from 9 to 10 GHz. The developed GaN-based power amplifier MMIC is expected to be applied in a variety of X-band radar applications.

• ETRI Journal
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• v.24 no.3
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• pp.190-196
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• 2002

This paper presents millimeter wave monolithic microwave integrated circuit (MMIC) low noise amplifiers using a $0.15{\mu}m$ commercial pHEMT process. After carefully investigating design considerations for millimeter-wave applications, with emphasis on the active device model and electomagnetic (EM) simulation, we designed two single-ended low noise amplifiers, one for Q-band and one for V-band. The Q-band two stage amplifier showed an average noise figure of 2.2 dB with an 18.3 dB average gain at 44 GHz. The V-band two stage amplifier showed an average noise figure of 2.9 dB with a 14.7 dB average gain at 65 GHz. Our design technique and model demonstrates good agreement between measured and predicted results. Compared with the published data, this work also presents state-of-the-art performance in terms of the gain and noise figure.

• Journal of electromagnetic engineering and science
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• v.13 no.2
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• pp.93-103
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• 2013

This paper presented a novel approach for the design of a tunable dual-band bandpass filter (BPF) with independently tunable passband center frequencies and bandwidths. The newly proposed dual-band filter principally comprised two dual-mode single band filters using common input/output lines. Each single BPF was realized using a varactor-loaded transmission line resonator. To suppress the harmonics over a broad bandwidth, a defected ground structure was used at the input/output feeding lines. From the experimental results, it was found that the proposed filter exhibited the first passband center frequency tunable range from 1.48 to 1.8 GHz with a 3-dB fractional bandwidth (FBW) variation from 5.76% to 8.55%, while the second passband center's frequency tunable range was 2.40 to 2.88 GHz with a 3-dB FBW variation from 8.28% to 12.42%. The measured results of the proposed filters showed a rejection level of 19 dB up to more than 10 times the highest center frequency of the first passband.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.10 no.6
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• pp.84-90
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• 2011

In this paper, a dual-band pseudo-combline narrow bandpass filter is proposed. The proposed bandpass filter adopts the open resonant stubs and the proposed bandpass filter can be used for ITS(Intelligent Transport System) and X-band satellite systems application. The proposed bandpass filter has the insertion and return losses of 1.72 dB and 15.5 dB at the bandwidth of 3.6 % and center frequency of 5.8 GHz, respectively. Also, the second operating frequency band for insertion and return losses are 1.92 dB and 16.3 dB at the bandwidth of 3% and center frequency of 8.5 GHz, respectively.

• Proceedings of the IEEK Conference
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• 2003.11c
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• pp.64-67
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• 2003

This paper presents the design of dual-band VCO using PBG structure for IEEE 802.11A/B. By adding switch circuit to the single-band VCO, we could achieve a dual-band VCO. The center frequencies of dual-band VCO are 5.93GHz(-13dBm) and 2.37GHz (3.50dBm). The phase noise is improved about l0dB by using PBG Structure.