• Journal of the Korean Solar Energy Society
• /
• v.36 no.5
• /
• pp.63-71
• /
• 2016

Installed PV module in field is affected by shading caused by various field environmental factors. Bypass diodes are installed in PV module for preventing a power loss and degradation of PV module by shading. But, Bypass diode is easily damaged by surge voltage and has often initial a defect. This paper propose the electric characteristic variation and the power prediction of PV module with damaged bypass diode. Firstly, the resistance for normal bypass diode and damaged bypass diode of resistance was measured by changing the current. When the current increases, the resistance of normal bypass diode is almost constant but the resistance of damaged bypass diode increases. Next, To estimate power of PV module by damaged bypass diode, the equation for the current is derived using solar cell equivalent circuit. Finally, the derived equation was simulated by using MatLab tools, was verified by comparing experimental data.

• Journal of Electrical Engineering and Technology
• /
• v.10 no.4
• /
• pp.1626-1634
• /
• 2015

LCL filters are widely used in three-phase PWM converter for its advantages of small volume, low cost and inhibition of high frequency current harmonic. However, it is difficult to optimize its design because its parameters are mutually influenced while the value of each parameter for LCL filter has impacts on the converter's cost and size. In this paper, the target of optimization is to minimize the parameter values of LCL filter, and an optimization method for parameters of LCL filter of three-phase PWM converter based on least square method is proposed. With this method, a quantitative calculation of the harmonic component of the converter’s side phase voltage is performed first, and then the quantitative relationship between phase voltage harmonics and grid phase current harmonics is analyzed. After that, the attenuation requirement of each harmonic is obtained by taking into account the requirements for each harmonic component of grid current. Then according to the optimization objective, the objective function with minimum harmonic attenuation deviation is established, and least squares method is adopted for three-dimensional global searching of parameters for LCL filter. Thus, the designed harmonic attenuation curve approximates the minimum attenuation requirements, and the optimized LCL filter parameters are obtained. Finally, the effectiveness of the method is verified by the experiments.

• Journal of Electrochemical Science and Technology
• /
• v.11 no.4
• /
• pp.346-351
• /
• 2020

The removal characteristics of copper (Cu) from electrochemical surface by voltage-activated reaction were reviewed to assess the applicability of electrochemical-mechanical polishing (ECMP) process in three types of electrolytes, such as HNO₃, KNO₃ and NaNO₃. Electrochemical surface conditions such as active, passive, transient and trans-passive states were monitored from its current-voltage (I-V) characteristic curves obtained by linear sweep voltammetry (LSV) method. In addition, the oxidation and reduction process of the Cu surface by repetitive input of positive and negative voltages were evaluated from the I-V curve obtained using the cyclic voltammetry (CV) method. Finally, the X-ray diffraction (XRD) patterns and energy dispersive spectroscopy (EDS) analyses were used to observe the structural surface states of a Cu electrode. The electrochemical analyses proposed in this study will help to accurately control the material removal rate (MRR) from the actual ECMP process because they are a good methodology for predicting optimal electrochemical process parameters such as current density, operating voltage, and operating time before performing the ECMP process.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2016.10a
• /
• pp.527-530
• /
• 2016

This paper presents curvature-compensated reference circuits operating under low-voltage condition and achieving low-power consumption with $0.35-{\mu}m$ standard CMOS process. The proposed circuit can operate under less than 1-V supply voltage by using MOS transistors operating in weak-inversion region. The simulation results shows a low temperature coefficient by using the proposed curvature compensation technique. It generates a graph-shape temperature characteristic that looks like a sine curve, not a bell-shape characteristic presented in other published BGRs without curvature compensation. The proposed circuits operate with 0.9-V supply voltage. First, the voltage reference circuit consumes 176nW power and the temperature coefficient is $26.4ppm/^{\circ}C$. The current reference circuit is designed to operate with 194.3nW power consumption and $13.3ppm/^{\circ}C$ temperature coefficient.

• Journal of Electrochemical Science and Technology
• /
• v.15 no.2
• /
• pp.253-260
• /
• 2024

Proton exchange membrane water electrolysis (PEMWE) is an efficient method for utilizing renewable energy sources such as wind and solar powers to produce green hydrogen. For PEMWE powered by renewable energy sources, its durability is a crucial factor in its performance since irregular and fluctuating characteristics of renewable energy sources, especially for wind power, can deteriorate the stability of PEMWE. Triangular voltage cycle is well able to simulate fluctuating wind power, but its effect on the durability has not been investigated extensively. In this study, the performance degradation of the PEMWE cell operated with the triangular voltage cycling was investigated at different ramping rates. The measured current responses during the cycling gradually decreased for both ramping rates, and I-V curve measurements before and after the cycling confirmed the degradation of the performances of PEMWE. For both measurements, the degradation rate was larger for 300 mV s^-1 than 30 mV s^-1, and they were determined as 0.36 and 1.26 mV h^-1 (at the current density of 2 A cm^-2) at the ramping rates of 30 and 300 mV s^-1, respectively. The comparison with other studies on triangular voltage cycling also indicate that an increase in the ramping rate accelerates the deterioration of the PEMWE performance. X-ray photoelectron spectroscopy and transmission electron microscopy results showed that the Ir catalyst was oxidized and did not dissolve during the voltage cycling. This study suggests that the ramping rate of the triangular voltage cycling is an important factor for the evaluation of the durability of PEMWE cells.

• Journal of Electrical Engineering and Technology
• /
• v.11 no.4
• /
• pp.939-942
• /
• 2016

One of the most important characteristic curves of a solar cell is its current density-voltage (J-V) curve under AM1.5G insolation. Solar cell can be considered as a semiconductor diode, so a diode equivalent model was used to estimate its parameters from the J-V curve by numerical simulation. Active layer plays an important role in operation of a solar cell. We investigated the effect thicknesses and defect densities (N_d) of the active layer on the J-V curve. When the active layer thickness was varied (for N_d = 8×10¹⁷ cm^-3) from 800 nm to 100 nm, the reverse saturation current density (J_o) changed from 3.56×10^-5 A/cm² to 9.62×10^-11 A/cm² and its ideality factor (n) changed from 5.28 to 2.02. For a reduced defect density (N_d = 4×10¹⁵ cm^-3), the n remained within 1.45≤n≤1.92 for the same thickness range. A small increase in shunt resistance and almost no change in series resistance were observed in these cells. The low reverse saturation current density (J_o = 9.62×10^-11 A/cm²) and diode ideality factor (n = 2.02 or 1.45) were observed for amorphous silicon based solar cell with 100 nm thick active layer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.30 no.2
• /
• pp.106-110
• /
• 2017

This paper compared current limiting characteristics of superconducting fault current limiter (SFCL) using E-I core due to the location of windings. Since E-I core has three legs and two magnetic paths, the current limiting characteristics of SFCL were expected to be affected by the installation location of windings, either center leg or right/left leg. To analyze its characteristics, the electrical equivalent circuit of the SFCL were derived and the electromagnetic analysis for the SFCL with the designed structure were performed. From the short-circuit tests, the hysteresis curve and the voltage-current trajectory of the SFCL due to the installation location of windings were extracted and compared each other. The SFCL with windings in the center leg of E-I core was shown to be larger magnetizing inductance compared to the one with windings in the right or left leg of E-I, which was analyzed from the hysteresis curve. In addition, larger decreased fault current right after the fault occurrence in the SFCL with windings in the center leg of E-I core was confirmed than the SFCL with windings in the right or left leg of E-I.

• Proceedings of the KIEE Conference
• /
• 2003.10a
• /
• pp.186-188
• /
• 2003

The ZnO surge arrester is the protective device for limiting surge voltages on equipment by diverting surge current and returning the device to its original status. The occurrence of overvoltage appears in any phase to AC power supply system and it appears in mixing AC and impulse voltages, moreover because HVDC power supply system uses converter in semiconductor, it makes mixed DC and high harmonics voltages. In this study, the various mixed AC and DC voltages was made for investigating the degradation effect of ZnO arrester according to mixed voltage. As a result, the increase of DC component to mixed voltages causes the increase of resistive component of total leakage current to ZnO block. In changing V-I curve for mixed voltages, the cross-over point acts a factor as making the proper capacitor size of an equivalent circuit for ZnO block.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.5 no.2
• /
• pp.107-112
• /
• 2005

We present an AlGaN/GaN metal-insulator-semiconductor-heterostructure field effect transistor (MIS-HFET) with an $Al_2O_3-HfO_2$ laminated high-k dielectric, deposited by plasma enhanced atomic layer deposition (PEALD). Based on capacitance-voltage measurements, the dielectric constant of the deposited $Al_2O_3-HfO_2$ laminated layer was estimated to be as high as 15. The fabricated MIS-HFET with a gate length of 102 m exhibited a maximum drain current of 500 mA/mm and maximum tr-ansconductance of 125 mS/mm. The gate leakage current was at least 4 orders of magnitude lower than that of the reference HFET. The pulsed current-voltage curve revealed that the $Al_2O_3-HfO_2$ laminated dielectric effectively passivated the surface of the device.

• Journal of the Korean Vacuum Society
• /
• v.10 no.4
• /
• pp.440-448
• /
• 2001

The operation properties of DBD plasma reactors were observed by using 20 kV square pulse at the cylindrical and planar type of reactors in the condition of air pressure. The optimum operation frequency $f_0$ which optimizes the efficiency of operation was found as such $f_0\proptoexp(-C)$ when the current-voltage curve and charge-voltage curve were observed. Using these properties the dissipated power was evaluated. The dissipated power at the optimum frequency of operation was varied as the value of capacitance which is dependent on the structure and the dielectric material of the reactor, and had the maximum value at the specific value of capacitance. With these value of capacitance, DBD reactors which has a high level of efficiency can be formed.