• Transactions on Electrical and Electronic Materials
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• v.16 no.5
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• pp.285-289
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• 2015

We prepared silver Schottky contacts to O-polar and nonpolar m-plane bulk ZnO wafers. Then, by considering various transport models, we performed a comparative analysis of the current transport properties of Ag/bulk ZnO Schottky diodes, which were measured at 300, 200, and 100 K. The fitting of the forward bias current-voltage (I-V) characteristics revealed that the tunneling current is dominant as the transport component in both the samples. Compared to thermionic emission (TE), a stronger contribution of tunneling current was observed at low temperature. The reverse bias I-V characteristics were well fitted with the thermionic field emission (TFE) in both the samples. The presence of acceptor-like adsorbates, such as O₂ and H₂O, modulated the surface conductive state of ZnO, thereby affecting the tunneling effect. The degree of activation/passivation of acceptor-like adsorbates might be different in both the samples owing to their different surface morphologies and surface defects (e.g., oxygen vacancies).

• Journal of Magnetics
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• v.16 no.2
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• pp.169-172
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• 2011

This study reports an alternative method for measuring the magnetoresistance of unpatterned magnetic tunnel junctions similar to the current-in-plane tunneling (CIPT) method. Instead of using microprobes, a series of point contacts with different spacings are coated on the top surface of the junctions and R-H loops at various spacings are then measured by the usual four-point probe method. The values of magnetoresistance and resistance-area products can be obtained by fitting the measured data to the CIPT theoretical model. The test results of two types of junctions were highly similar to those obtained from standard CIPT tools. The proposed method may help to accelerate the process for evaluating the quality of magnetic tunnel junctions when commercial CIPT tools are not accessible.

• Proceedings of the Korean Magnestics Society Conference
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• 2011.12a
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• pp.23-24
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• 2011

• Proceedings of the Korean Magnestics Society Conference
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• 2014.11a
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• pp.41-42
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• 2014

• Applied Science and Convergence Technology
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• v.23 no.3
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• pp.128-133
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• 2014

We study the ballistic spin transport properties in a two-dimensional electron gas system in the presence of magnetic barriers using a transfer matrix method. We concentrate on the size-effect of the magnetic barriers parallel to a two-dimensional electron gas plane. We calculate the transmission probability of the ballistic spin transport in the magnetic barrier structure while varying the width of the magnetic barriers. It is shown that resonant tunneling oscillation is affected by the width and height of the magnetic barriers sensitively as well as by the inter-spacing of the barriers. We also consider the effect of additional electrostatic modulation on the top of the magnetic barriers, which could enhance the current spin polarization. Because all-semiconductor-based devices are free from the resistance mismatch problem, a resonant tunneling structure using the two-dimensional electron gas system with electric-magnetic modulation would play an important role in future spintronics applications. From the results here, we provide information on the physical parameters of a device to produce well-defined spin-polarized current.

• Proceedings of the Korean Magnestics Society Conference
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• 2003.06a
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• pp.21-21
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• 2003

Microstructure and magnetic transport phenomina in rf sputtered AlN/Co type ten-layered discontinuous films of nanoscaled [AlN (3 nm)/Co (t nm)]...$\sub$10/ with t$\sub$Co/=1.0∼2.0 nm have been investigated. The microstructure and tunneling magnetic resistance of the samples are strongly dependent on the thickness of Co layer. Negative tunneling magneto-resistance due to the spin-dependent transport has been observed along the current-in-plane configuration in the samples having the Co layers below 1.6 nm thick. When the thickness of Co layer was less than 1,2 nm, randomly oriented granular Co particles were completely isolated and embedded in amorphous AlN matrix, and the films showed the superparamagnetic behavior with a high MR value of Δ$\rho$/$\rho$$\sub$0/=1.8 %. As t$\sub$Co/ increases, a transition from the regime of co-existence of superparamagnetic and ferromagnetic behaviors to ferromagnetic behavior was observed. Tunneling barrier called "decay length for tunneling" for the films having the thickness of Co layer from 1.4 to 1.6 nm was measured to be ranged from 0.004 to 0.021 ${\AA}$$\^$-1/.

• Journal of Magnetics
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• v.8 no.2
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• pp.98-102
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• 2003

Microstructure and magnetic transport phenomina in rf sputtered AIN/CO type ten- layered discontinuous films of nanoscaled [AIN(3 nm)/Co(t nm)]…$_10$ with t$_Co$=1.0∼2.0 nm have been investigated. The microstructure and tunneling magnetic resistance of the samples are strongly dependent on the thickness of Co layer, Negative tunneling magneto-resistance due to the spin-dependent transport has been observed along the current-in-plane configuration in the samples having the Co layers below 1.6 nm thick. When the thickness of Co layer was less than 1.2 nm, randomly oriented granular Co particles were completely isolated and embedded in amorphous AIN matrix, and the films showed the superparamagnetic behavior with a high MR value of ${\Delta}p/p_0$=1.8%. As t$_Co$ increases, a transition from the regime of co-existence of superparamagnetic and ferromagnetic behaviors to ferromagnetic behavior was observed. funneling barrier called “decay length far tunneling” fur the films haying the thickness of Co layer from 1.4 to 1.6 nm was measured to be ranged from 0.004 to 0.021 ${\AA}$$^{-1}$.

• Korean Journal of Materials Research
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• v.33 no.6
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• pp.229-235
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• 2023

An all-perovskite oxide heterostructure composed of SrSnO₃/Nb-doped SrTiO₃ was fabricated using the pulsed laser deposition method. In-plane and out-of-plane structural characterization of the fabricated films were analyzed by x-ray diffraction with θ-2θ scans and φ scans. X-ray photoelectron spectroscopy measurement was performed to check the film's composition. The electrical transport characteristic of the heterostructure was determined by applying a pulsed dc bias across the interface. Unusual transport properties of the interface between the SrSnO₃ and Nb-doped SrTiO₃ were investigated at temperatures from 100 to 300 K. A diodelike rectifying behavior was observed in the temperature-dependent current-voltage (IV) measurements. The forward current showed the typical IV characteristics of p-n junctions or Schottky diodes, and were perfectly fitted using the thermionic emission model. Two regions with different transport mechanism were detected, and the boundary curve was expressed by ln I = -1.28V - 13. Under reverse bias, however, the temperature- dependent IV curves revealed an unusual increase in the reverse-bias current with decreasing temperature, indicating tunneling effects at the interface. The Poole-Frenkel emission was used to explain this electrical transport mechanism under the reverse voltages.

• The Journal of Engineering Geology
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• v.32 no.1
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• pp.1-12
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• 2022

Based on the extended spatial mobilization plane (SMP) criterion, we present an elastic-brittle-plastic solution for an axisymmetric cylindrical tunnel. The influences of the intermediate principal compressive stress and material strain-softening behavior are considered. Closed-form formulas for the critical support force, radius of plastic zone, and distributions of stress and displacement in surrounding rock are proposed. The elastic-plastic solution based on SMP is compared with the Kastner solution to verify the credibility of the obtained elastic-plastic solution. The elastic-brittle-plastic solution following the SMP criterion and the current solution based on the Mohr-Coulomb criterion are also compared. The rock strain-softening rate and the intermediate principal stress affect the stability of the surrounding rock. The results provide guidance for optimizing the design of support systems for tunnels.

• Progress in Superconductivity
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• v.9 no.2
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• pp.140-145
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• 2008

We report on the Josephson vortex dynamics in $Bi_2Sr_2CaCuO_{8+\delta}$ natural Josephson junctions by c-axis tunneling measurements. Beside the quasiparticle branches in the current-voltage characteristics, a new set of multiple branches, referred to as Josephson-vortex-flow branches (JVFBs), are observed. The JVFBs emerge in an in-plane magnetic field above $H_0\;=\;{\Phi}_0/{\gamma}s^2$ and show highly hysteretic behavior, which can be explained in terms of the recently proposed dynamic-phase-separation model. In this work we examined the effect on the JVFBs by the presence of pancake vortices generated as the external magnetic field was applied slightly tilted from the in-plane direction. JVFBs were found to become larger and prominent with increasing pancake vortex density as the tilt angle increased, which were presumably caused by slowing down of a Josephson vortex lattice in the presence of pancake vortices.