• Title/Summary/Keyword: current-effect

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Degradation Pattern of Black phosphorus Field Effect Transistor

  • Lee, Byeong-Cheol;Ju, Min-Gyu;Jin, Jun-Eon;Lee, Jae-U;Kim, Gyu-Tae
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.167.1-167.1
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    • 2015
  • We investigate the degradation pattern of Black phosphorus (BP) field effect transistor (FETs) was investigated by using an mechanically exfoliated BP that react O2 and water vapor in ambient condition, degradation. The BP FETs was electrically measured every 20 minutes (1cycle) in the air, the total cycle is 100. We show electrical changes with Mobility, On/off ratio, Current and a significant positive shift in the threshold voltage. We extracted the current level at Vgs-Vth = 0, -10, -20 and fitting with Swiss-cheese model. This model suggested that Swiss-cheese model is well fitted with degradation pattern of BP FETs.

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Microstructure and electrical properties of BSCCO tapes with ceramic barriers (Ceramic 코팅된 BSCCO 선재의 미세구조와 전기적특성 평가)

  • 장석헌;임준형;김정호;김규태;주진호;나완수;류경우
    • Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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    • 2002.02a
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    • pp.156-158
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    • 2002
  • BSCCO tpaes with insulating ceramic barriers such as Zr$O_{2}$, $Al_{2}$$CO_{3}$, and Sr$CO_{3}$ were fabricated and their electrical properties were evaluated. Each filament was dip coated with ceramic slurries and then made 19 multifilamentary tapes by the “powder-in-tube” process. Microstructural investigation showed that filaments were completely decoupled each other and had a significant sausage effect. The critical current of coated tapes was reduced compared to that of non coated one, and its reduction was varied with the coating materials. For tapes with coated with Sr$CO_{3}$, the critical current was measured to be 7.2 A which was 44% reduction to that of non coated one. This reduction is believed to be due to the formation of sausage effect and non-uniform microstructure.

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Photo-Induced Memory of an OLED in the presence of thio-Michler's ketone

  • Enokida, Toshio;Gwon, Tae-Sun
    • 한국정보디스플레이학회:학술대회논문집
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    • 2004.08a
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    • pp.281-284
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    • 2004
  • Photo-induced memory effect of an organic light-emitting diode(OLED) composed of a hydrazone-derivative(DBAH) dispersed in bis-phenol-A type polycarbonate polymer(PCA) in the presence of thio-Michler's ketone, was investigated by the measuring of the current density and luminance at the various conditions. After the light exposure, the current of the OLED was decreased approximately one order, and the luminance of the OLED also decresed. This memory effct was erasable by heating the OLED to the temperature higher than the glass transition temperature(Tg). As shown in this result, we found the memory effect was erased by heating and returned to its original state in the hole injecting layer(HIL) of the OLED. A series of these phenomena was suggested the possibility of the application to the imaging plate.

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Quasi-Steady-State Analysis on the Effect of the STATCOM on FRT Performance of Fixed Speed Wind Turbines (준정상상태 해석을 통한 고정속 풍력 발전기의 FRT에 대한 STATCOM의 효과 분석)

  • Ahn, Seon-Ju;Hwang, Pyeong-Ik;Nam, Soon-Ryul;Kang, Sang-Hee;Moon, Seung-Il
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.59 no.4
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    • pp.686-692
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    • 2010
  • This paper analyzes the effect of the STATCOM on the improvement of the Fault Ride Through (FRT) capability of the fixed speed wind turbines(FSWTs). The steady-state models of the wind farm components, such as induction generator, capacitor bank, and the STATCOM, are developed based on the simplified equivalent circuit. Especially, the STATCOM is modeled as a controllable current source and a method that analytically determines the magnitude of the injection current is developed. For the quasi-steady-state(QSS) analysis, the steady-state model of the generator and STATCOM are merged with the dynamic model of drive train. The QSS simulation with the STATCOM shows that the STATCOM can enhance the FRT performance by improving the $W_r-T_e$ characteristics of the FSWTs.

A Capacitorless 1-Transistor DRAM Device using Strained-Silicon-on-Insulator (sSOI) Substrate (Strained-Silicon-on-Insulator (sSOI) 기판을 이용한 Capacitorless 1-Transistor DRAM 소자)

  • Kim, Min-Soo;Oh, Jun-Seok;Jung, Jong-Wan;Lee, Young-Hie;Chung, Hong-Bay;Cho, Won-Ju
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.95-96
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    • 2009
  • A fully depleted capacitorless 1-transistor dynamic random access memory (FD 1T-DRAM) based on a sSOI strained-silicon-on-insulator) wafer was investigated. The fabricated device showed excellent electrical characteristics of transistor such as low leakage current, low subthreshold swing, large on/off current ratio, and high electron mobility. The FD sSOI 1T-DRAM can be operated as memory device by the floating body effect when the substrate bias of -15 V is applied, and the FD sSOI 1T-DRAM showed large sensing margin and several milli seconds data retention time.

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2D-Simulation of Quantum Effects in Silicon Nanowire Transistor (실리콘 나노선 트렌지스터 양자 효과의 2차원 시뮬레이션)

  • Hwang, Min-Young;Choi, Chang-Yong;Koo, Sang-Mo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.132-132
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    • 2009
  • A 2D-simulation using a quantum model of silicon nanowire (SiNW) field-effect transistors (FETs) have been performed by the effective mass theory. We have investigated very close for real device analysis, so we used to the non-equilibrium Green's function (NEGF) and the density gradient of quantum model. We investigated I-V characteristics curve and C-V characteristics curve of the channel thickness from 5nm to 200nm. As a result of simulation, even higher drain current in SiNW using a quantum model was observed than in SiNW using a non-quantum model. The reason of higher drain current can be explained by the quantum confinement effect.

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Elastic and inelastic electron tunneling characteristics in polyimide LB films (Polyimide LB막내의 탄성 및 비탄성 tunneling 전기전도특성)

  • ;;Mitsumasa Iwamoto
    • Electrical & Electronic Materials
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    • v.7 no.6
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    • pp.473-480
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    • 1994
  • The electron tunnel effect in polvimide LB films sandwiched between metal electrodes has been investigated in the present work by a study of both the elastic and inelastic tunneling components. By the results of elastic tunneling experiments in Au/Pl/Au tunneling junction, we can judge the height and thickness of tunnel barrier. The inelastic current in Inelastic Electron Tunneling Spectroscopy(IETS) is due to the interaction of the tunneling electron with the vibrational modes of the molecular species in the barrier. Measurements are done on Au/PI/Pb tunneling junctions. The spectra obtained are the second derivatives of the current-voltage characteristics of these junctions : specifically, d$^{2}$1/dV$^{2}$ as a function of voltage V. Because the energies measured by IETS can be directly compared to those measured by infrared and Raman spectroscopy, IR-RAS spectroscopy also measured for reference.

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Finite Element Analysis of a BLDC Motor Considering the Eddy Current in Rotor Steel Shell (회전자 철심의 와전류를 고려한 BLDC 전동기의 유한 요소 해석)

  • Park, Seung-Chan;Yun, Tae-Ho;Gwon, Byeong-Il;Yun, Hui-Su;Won, Seong-Hong
    • The Transactions of the Korean Institute of Electrical Engineers B
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    • v.48 no.3
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    • pp.110-116
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    • 1999
  • This paper describes the effect of eddy currents in the rotor steel shell of exterior-rotor permanent magnet BLDC motor of which rotor is revolving at a high speed. A two-dimensional time-stepping finite element method is used for analyzing electromagnetic field and computing performances of the motor. As a result the effect of the eddy currents in the rotor steel shell is shown by comparing the analysis results from both the proposed method and the conventional one.

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The skin effect and current distribution characteristics of a coil streaming with high frequency (초고주파전류가 흐르는 코일의 표피효과와 전류분포특성 - 핀치효과 개선용 4각단면 중공코일의 전류흐름특성 -)

  • Jang, S.M.;Seo, J.H.;Lee, H.G.;Hong, J.P.;Lee, J.H.
    • Proceedings of the KIEE Conference
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    • 1996.07a
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    • pp.222-224
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    • 1996
  • This paper treats the stream phenomena of high frequency current on the solid-loop coil of which consists the hollow conductor. The governing equation is derived from electromagnetic field theory and the characteristics are analyzed by FEM with 2-D and 3-D. The results may be available data on designing the optimum shape of the coil for the improved pinch effect.

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The Effect of Resin Treatment for Improving of the Metal Thin Membrane Fastness on Polyester Fabrics by Sputtering (Sputtering에 의한 polyester 직물의 박막내구성 개선을 위한 수지처리 효과)

  • Koo Kang;Jeon Sang-Min;Song Byung-Gab;Park Young-Mi
    • Textile Coloration and Finishing
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    • v.18 no.3 s.88
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    • pp.31-41
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    • 2006
  • Functional properties are available with sputtering. But sputtering treatment alone cannot got a good fastness performance to washing, rubbing and light. This research was objected to investigate optimum condition by sputtering on polyester through various processing conditions such as ion current and treatment time, and then various resin treated onto metal coated polyester fabrics in order to increase washing fastness of metal membrane. As the results, the optimum conditions revealed 1500 mA of ion current, 2 min of treatment time in sputter, and suitable resin concentrations were 2% of o.w.s (on the weight of solution) in resin treatment. Therefore, we could get enhanced anti-static effect and flex stiffness as well as washing fastness in sputtered polyester fabric with various resin treatment, for example, melamine and polyurethane.