• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.342-344
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• 2005

We have simulated a symmetric dual-gate TFT which has triple floating n+ channel to improve the on-current of the dual-gate TFT. We achieved a low hole concentration at the source and channel junction causes the improvement the potential barrier so that we observed the reduction of the kink-effect. In this paper, we observed the reduction of the kink-effect compared with the conventional single-gate TFT and the improvement of the on-current compared with the conventional dual-gate TFT.

• Proceedings of the KIEE Conference
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• 2001.07e
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• pp.13-16
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• 2001

This paper describes the problems associated with the use of PWM ASDs to drive induction motors. A major effect of harmonic voltages and currents in induction motors is increased heating due to iron and copper losses at harmonic frequencies. The harmonic components thus affect the motor efficiency, and can also affect the torque developed. In order to investigate the effect of harmonics which is caused by using of nonlinear load at the low voltage system, we fixed up simple load model and measured the voltage and current. Measurement. results show that additional operation of linear load at the parallel bus in using nonlinear load such as ASD is helpful to the reduction of harmonic current.

• Proceedings of the KIEE Conference
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• 2001.07a
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• pp.491-493
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• 2001

This paper describes the effect of lightning current on combination transmission line. In the paper, an lightning current which can generate 2/80[${\mu}s$]. 20[kA] - 40[kA] waveform is modeled in ATPDraw. The lightning current invaded to the overhead power transmission line propagates to the underground power cable. The simulation was performed to analyze the effect of arrester location and overvoltage occurred in power cable.

• Journal of the Semiconductor & Display Technology
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• v.3 no.4
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• pp.29-32
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• 2004

Fully depleted Silicon-on-Insulator (FD-SOI) devices lead to better electrical characteristics than bulk CMOS devices. However, the presence of a thin top silicon layer and a buried SiO2 layer causes self-heating due to the low thermal conductivity of the buried oxide. The electrical characteristics of FDSOI devices strongly depend on the path of heat dissipation. In this paper, we present a new three-dimensional (3-D) analysis technique for the self-heating effect of the finger-type and bar-type transistors. The 3-D analysis results show that the drain current of the finger-type transistor is 14.7% smaller than that of the bar-type transistor due to the 3-D self-heating effect. We have learned that the rate of current degradation increases significantly when the width of a transistor is smaller that a critical value in a finger-type layout. The current degradation fro the 3-D structures of the finger-type and bar-type transistors is investigated and the design issues are also discussed.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1382-1384
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• 1994

Description is given of the effect of fuse-element notch shape on interruption parameters. The notch of fuse-elements have all the same area. Tests were carried out at direct current and carried out the effect of the fuse element construction on the process of interrupting short circuit and overload current. The arcing phenomenon in a low voltage fuse operation in case of high current value of short circuit is analyzed.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.4
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• pp.451-456
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• 2014

A compact model of a depletion-mode silicon-nanowire (Si-NW) pH sensor is proposed. This drain current model is obtained from the Pao-Sah integral and the continuous charge-based model, which is derived by applying the parabolic potential approximation to the Poisson's equation in the cylindrical coordinate system. The threshold-voltage shift in the drain-current model is obtained by solving the nonlinear Poisson-Boltzmann equation for the electrolyte. The simulation results obtained from the proposed drain-current model for the Si-NW field-effect transistor (SiNWFET) agree well with those of the three-dimensional (3D) device simulation, and those from the Si-NW pH sensor model also agree with the experimental data.

• Speech Sciences
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• v.8 no.4
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• pp.1-15
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• 2001

This paper describes the effect of new recognition unit, a unit based on semisyllable, and its post processing method. A recognition unit based on semi-syllable expresses Korean connected digit's coarticulation effect. An existing method using semi-syllable limits next models, derived from current recognized models, to make complete connected digit sequence. However, this paper uses a new method to make complete connected digit sequence. The new post-processing method recognizes isolated digit words which include digits sequence from the digit combinations being able to occur from current recognized semi-syllable sequence. This method gives an improved accuracy rate than that of existing method. This new post processing provides two advantages. 1) It corrects current mis-recognized semi-syllable unit. 2) When people say each digit, they say it without regard to saying duration.

• 전기의세계
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• v.21 no.4
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• pp.15-21
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• 1972

For the conventional DC machine, the armature MMF is negligible compared with field MMF except when the machine is under heavy load or transient conditions. During the motor starting or reversal, the transient armature current and corresponding MMF effect the flux density of each pole in the machine magnetic circuit. However, the circuit flux density is restored to normal values by the field winding MMF after the transient armature current dies in an electromagnetic DC motor. Permanent magnet servomotor have no field windings about the circuit poles to restore circuit flux density through the demagnetized part of each pole after the transient armature MMF dies, and portions of the magnetic circuit stay permanently demagnetized. Thus the problem of stabilizing a magnet pole piece under the influence of the transient armature current need attentions. This work present the recoil operation of the servomotor with PM poles in conjunctions with the influence of the armature reaction effect. The development of an analytical and quantatative study is presented for predicting the regime of the recoil operation under this condition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.450-453
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• 1999

In this paper, The relationship between device performance and channel length(1.5-50$\mu$m) in polysilicon thin-film transistors fabricated by SPC technology was Investigated by measuring electric Properties such as 1-V characteristics, field effect mobility, threshold voltage, subthreshold swing, and trap density in grain boundary with channel length. The drain current at ON-state increases with decreasing channel length due to increase of the drain field, while OFF-state current (leakage current) is independent of channel length. The field effect mobility decrease with channel length due to decreasing carrier life time by the avalanche injection of the carrier at high drain field. The threshold voltage and subthreshold swing decrease with channel length, and then increase in 1.5 $\mu$m increase of increase of trap density in grain boundary by impact ionization.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2003.10a
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• pp.142-145
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• 2003

In order to investigate the effect of cryogenic rolling on the critical current density (Jc), 54 and 55-multi-filament Bi-2223/hg tapes have been fabricated using a PIT process including two different types of cooling methods. The densification of oxide filament was found to occur due to the cryogenic rolling, and this enhanced the critical current density. However, when the wire was fully immersed in liquid nitrogen used as the coolant in cryogenic rolling, Jc degradation appeared caused by the nitrogen penetration into the filament. The cryogenically rolled tape with an improved type of cooling showed approximately 10％ Jc's increase.