한국정보디스플레이학회:학술대회논문집
- 2005.07a
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- Pages.342-344
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- 2005
Improvement of the On-Current for the Symmetric Dual-Gate TFT Structure by Floating N+ Channel
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LEE, Dae-Yeon
(Dept. of Electrical Engineering, Korea University)
;
- Hwang, Sang-Jun (Dept. of Electrical Engineering, Korea University) ;
- Park, Sang-Won (Dept. of Electrical Engineering, Korea University) ;
- Sung, Man-Young (Dept. of Electrical Engineering, Korea University)
- Published : 2005.07.19
Abstract
We have simulated a symmetric dual-gate TFT which has triple floating n+ channel to improve the on-current of the dual-gate TFT. We achieved a low hole concentration at the source and channel junction causes the improvement the potential barrier so that we observed the reduction of the kink-effect. In this paper, we observed the reduction of the kink-effect compared with the conventional single-gate TFT and the improvement of the on-current compared with the conventional dual-gate TFT.
Keywords