• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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• pp.71-74
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• 1998

In this Paper, we investigate the electrical properties of ultra-thin(70${\AA}$) nitrided(NO) and reoxidized nitrided oxide(ONO) film that ale considered to be premising candidates for replacing conventional silicon dioxide film in ULSI level integration. we studied I$\sub$g/-V$\sub$g/ characteristics to know the effect of nitridation and reoxidation on the current conduction, leakage current time-dependent dielectric breakdown(TDDB) to evaluate charge-to-breakdown(Q$\sub$bd/), and the effect of stress temperature(25, 50, 75, 100$^{\circ}C$) and compared to those with thermal gate oxide(SiO$_2$) of identical thickness. From the measurement results, we find that reoxidized nitrided oxide(ONO) film shows superior dielectric characteristics, leakage current, and breakdown-to-charge(Qbd) performance over the NO film, while maintaining a similar electric field dependence compared to NO layer. Besides, ONO film has strong resistance against variation in temperature.

• 한국산업정보학회논문지
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• 제18권1호
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• pp.19-24
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• 2013

As CMOS technology is scaled down more aggressively, the reliability mechanism (or aging effect) caused by the diffusion of metal atoms along the conductor in the direction of the electron flow, also called electromigration (EM), has become a major reliability concern. With the present of EM, it is difficult to control the current flows of the MOSFET device and interconnect. In addition, nanoscale CMOS circuits suffer from increased gate leakage current and power consumption. In this paper, the EM effects on current of the nanoscale CMOS circuits are analyzed. Finally, this paper introduces an on-chip current measurement method providing lifetime electromigration management which are designed using 45-nm CMOS predictive technology model.

• 반도체디스플레이기술학회지
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• 제18권4호
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• pp.120-123
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• 2019

The effect of surface plasmon on ZTO thin films was investigated. The phenomenon of depletion occurring in the interface of the ZTO thin film created a potential barrier and the dielectric layer of the depletion formed a non-mass particle called plasmon. ZTO thin film represents n-type semiconductor features, and surface current by plasma has been able to obtain the effect of improving electrical efficiency as a result of high current at positive voltage and low current at negative voltage. It can be seen that the reduction of electric charge due to recombination of electronic hole pairs by heat treatment of compound semiconductors induces higher surface current in semiconductor devices.

• Journal of Magnetics
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• 제21권4호
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• pp.503-508
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• 2016

The roll- and pitch-induced eddy currents create a magnetic field that contributes to the total magnetic signature of naval vessels. The magnetic signature is of concern, as it exposes the ship to the threat of modern influence mines. It is estimated that the eddy current is the second most important source contributing to a ship's underwater magnetic field following the ferromagnetic effect. In the present paper, the finite element (FE) method is used to predict the eddy current signature of a real ship. The FE model is validated using the measurements of the Canadian research vessel CFAV QUEST at the Earth's Field Simulator (EFS) in Schirnau, Germany. Modeling and validation of the eddy current magnetic signature for a real ship represents a novelty in the field. It is shown that the characteristics of this signature depend on frequency. Based on these results, a ship's degaussing system could be improved to cancel both the ferromagnetic and the eddy current contribution to the magnetic signature simultaneously, reducing the susceptibility to sea mines.

• 반도체디스플레이기술학회지
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• 제17권2호
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• pp.32-35
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• 2018

The current voltage characteristics of ZTO/SiOC were researched, and the conductivities of the ZTO films as a channel material were analyzed. The current of SiOC was abruptly decreased near 0V, and then the depletion layer was formed by the disappearance of charges in the region form -12V to +12V. SiOC with Schottky contacts near ${\sim}10^{-9}$ A had the cutoff effect of leakage currents. The conductivity of ZTOs prepared on SiOC was improved in the cutoff region of the leakage current of -12V

• 전력전자학회:학술대회논문집
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• 전력전자학회 2019년도 전력전자학술대회
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• pp.8-10
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• 2019

In this paper, a bidirectional three-phase push pull converter is analyzed for the high power, wide voltage range applications. From comparison analysis of two switching methods: PWM plus phase-shift (PPS) and dual-asymmetric PWM (DAPWM) with the effect of dead-time, the proposed hybrid control is aimed to reduce the circulating current under wide voltage range operation. Value of leakage inductance effect to the peak current value, current stress and conduction loss in facing the load variation. Trade-off between power range and slew rate of transformer current was analyzed for properly selecting value of the transformer leakage inductance. Experimental results from a 22-kW prototype are provided to validate the proposed concept.

• 한국자기공명학회논문지
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• 제23권2호
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• pp.46-50
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• 2019

Spin orbit torque would be applied as the next generation of MRAM, so many researchers are interested in related field. To make a more efficient device, electric current should convert into spin current with high efficiency. Moreover, it becomes important to measure efficiency of spin orbit torque accurately. We measured spin torque FMR of W/CoFeB hetero structure system with direct current. The efficiencies of the damping like torque and field like torque were measured by using the linewidth and on-resonance field proportional to direct current. In addition, we analyzed that a quadratic shift of the on-response field was caused by the Joule heating.

• Transactions on Electrical and Electronic Materials
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• 제17권6호
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• pp.329-334
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• 2016

In this work, the temperature dependence of electrical parameters of nanoscale SOI (silicon-on-insulator) TG (triple gate) n-FinFET (n-channel Fin field effect transistor) was investigated. Numerical device simulator $ATLAS^{TM}$ was used to construct, examine, and simulate the structure in three dimensions with different models. The drain current, transconductance, threshold voltage, subthreshold swing, leakage current, drain induced barrier lowering, and on/off current ratio were studied in various biasing configurations. The temperature dependence of the main electrical parameters of a SOI TG n-FinFET was analyzed and discussed. Increased temperature led to degraded performance of some basic parameters such as subthreshold swing, transconductance, on-current, and leakage current. These results might be useful for further development of devises to strongly down-scale the manufacturing process.

• 대한지구과학교육학회지
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• 제8권3호
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• pp.387-398
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• 2015

The purposes of this study were to analyze the effect of a scaffold to help in understanding the principle of land and sea breeze through the convection current box experiment and to analyze the students' inference abilities and analogy abilities. For this purpose, the 60 elementary students who had not learned the principle of land and sea breeze were surveyed and analyzed. When using the scaffold to compare the movement of the incense smoke in the convection current box with that of the incense smoke on the outside of the convection current box, the rate of the students who correctly understood the principle of the land and sea breeze between the sea and the land was very low. The result shows that the scaffold used in this study do not help sufficiently in understanding the principle of the land and sea breeze through analogy and it is necessary to introduce a new scaffold for the elementary students to understand it.

• 소성∙가공
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• 제29권1호
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• pp.37-43
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• 2020

Increasing the critical current density of superconducting wire is one of the difficult challenges in the field of superconductivity. It is well known that the higher volume fraction of uniformly dispersed α-Ti is able to enhance the critical current density of superconducting material NbTi because α-Ti serves as a flux pinning center. The volume fraction of α-Ti highly depends on the grain size of NbTi because α-Ti precipitates at the grain boundaries or triple points. For this purpose, we investigated the effect of initial microstructures of NbTi obtained from hot rolling in various temperature conditions on the critical current density. In addition, subsequent heat treatment was assigned to precipitate α-Ti and groove rolling/cold drawing was adopted to produce a wire with a diameter of about 1.0 mm. It was observed that the band structure was formed after hot rolling at 500~600℃. It was also found that the volume fraction of α-Ti after hot rolling at 500~600℃ was higher and it led to the highest critical current density.