• JSTS:Journal of Semiconductor Technology and Science
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• v.10 no.2
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• pp.152-159
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• 2010

We propose a semi-analytical current conduction model for depletion-mode n-type nanowire field-effect transistors (NWFETs) with top-gate structure. The NWFET model is based on an equivalent circuit consisting of two back-to-back Schottky diodes for the metal-semiconductor (MS) contacts and the intrinsic top-gate NWFET. The intrinsic top-gate NWFET model is derived from the current conduction mechanisms due to bulk charges through the center neutral region as well as of accumulation charges through the surface accumulation region, based on the electrostatic method, and thus it includes all current conduction mechanisms of the NWFET operating at various top-gate bias conditions. Our previously developed Schottky diode model is used for the MS contacts. The newly developed model is integrated into ADS, in which the intrinsic part of the NWFET is developed by utilizing the Symbolically Defined Device (SDD) for an equation-based nonlinear model. The results simulated from the newly developed NWFET model reproduce considerably well the reported experimental results.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2016.10a
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• pp.616-618
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• 2016

Four types of structure of tunnel field-effect transistors (TFETs) have been investigated by TCAD simulation. Pocket and L-shaped TFETs are better performance than single-gate and double-gate TFETs in terms of on-current and subthreshold swing. New guideline of TFETs is presented for the structure design.

• Structural Engineering and Mechanics
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• v.81 no.4
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• pp.503-511
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• 2022

In this article, we have examined the effect of fractional order parameter in a two-dimensional orthotropic magneto-thermoelastic solid in generalized thermoelasticity without energy dissipation with fractional order heat transfer in the context of hall current, rotation and two-temperature due to normal force. Laplace and Fourier transform techniques are used to obtain the solution of the problem. The expressions for displacement components, stress components, current density components and conductive temperature are obtained in transformed domain and then in physical domain by using numerical inversion method. The effect of fractional parameter on all the components has been depicted through graphs. Some special cases are also discussed in the present investigation.

• Korean Journal of Materials Research
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• v.32 no.8
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• pp.333-338
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• 2022

In this work, we developed silver nanowires and a silicon based Schottky junction and demonstrated ultrafast broadband photosensing behavior. The current device had a response speed that was ultrafast, with a rising time of 36 ㎲ and a falling time of 382 ㎲, and it had a high level of repeatability across a broad spectrum of wavelengths (λ = 365 to 940 nm). Furthermore, it exhibited excellent responsivity of 60 mA/W and a significant detectivity of 3.5 × 10¹² Jones at a λ = 940 nm with an intensity of 0.2 mW cm^-2 under zero bias operating voltage, which reflects a boost of 50 %, by using the AC PV effect. This excellent broadband performance was caused by the photon-induced alternative photocurrent effect, which changed the way the optoelectronics work. This innovative approach will open a second door to the potential design of a broadband ultrafast device for use in cutting-edge optoelectronics.

• Journal of Sensor Science and Technology
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• v.23 no.2
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• pp.114-121
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• 2014

We report a polysilicon active area membrane field effect transistor (PSAFET) pressure sensor for low stress deflection of membrane. The PSAFET was produced in conventional FET semiconductor fabrication and backside wet etching. The PSAFET located at the front side measured pressure change using 300 nm thin-nitride membrane when a membrane was slightly strained by the small deflection of membrane shape from backside with any physical force. The PSAFET showed high sensitivity around threshold voltage, because threshold voltage variation was composed of fractional function form in sensitivity equation of current variation. When gate voltage was biased close to threshold voltage, a fractional function form had infinite value at $V_{tn}$, which increased the current variation of sensitivity. Threshold voltage effect was dominant right after the PSAFET was turned on. Narrow transistor channel established by small current flow was choked because electron could barely cross drain-source electrodes. When gate voltage was far from threshold voltage, threshold voltage effect converged to zero in fractional form of threshold voltage variations and drain current change was mostly determined by mobility changes. As the PSAFET fabrication was compatible with a polysilicon FET in CMOS fabrication, it could be adapted in low pressure sensor and bio molecular sensor.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.11
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• pp.1014-1021
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• 1998

We evaluated the effect of processing variables on microstructural evolution interface irregularity between Ag sheath and superconductor core and resultant critical current density(J$_{c}$) of (Bi,Pb)$_2$Sr$_2$Ca$_2$Cu$_3$O$_{x}$(2223) superconductor tape. The value of J$_{c}$ was significantly influenced by the interface irregularity, degree of texturing and relative 2223 content. The interface became more irregular(sausage effect), while the degree of texturing gradually improved as the dimension of tape decreased during forming process. As the dimension of wire/tape were changed from diameter of 3.25 mm to thickness of 0.20 mm, J$_{c}$ value was observed to be increased by 10 times. In addition, optimum sintering temperature for improved J$_{c}$ was observed to be 835$^{\circ}C$ in a ambient atmosphere probably due to combined effect of both improved texturing and high 2223 content. Microstructural investigation showed the degree of texturing was degraded by the existence of both second phases and interface irregularity. It was observed that larger grain size and better texturing was developed near relatively flat interface compared to those inside superconducting core.ting core.

• Transactions on Electrical and Electronic Materials
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• v.7 no.2
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• pp.53-57
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• 2006

In this paper, a Symmetric Dual-gate Single-Si TFT, which includes three split floating n+ zones, is simulated. This structure drastically reduces the kink-effect and improves the on-current. This is due to the separated floating n+ zones, the transistor channel region is split into four zones with different lengths defined by a floating n+ region. This structure allows effective reduction in the kink-effect, depending on thy length of the two sub-channels. The on-current of the proposed dual-gate structure is 0.9 mA, while that of the conventional dual-gate structure is 0.5 mA, at both 12 V drain and 7 V gate voltages. This result shows an 80% enhancement in on-current. In addition, the reduction of electric field in the channel region compared to a conventional single-gate TFT and the reduction of the output conductance in the saturation region, is observed. In addition, the reduction in hole concentration, in the channel region, in order for effectively reducing the kink-effect, is also confirmed.

• Journal of the Korean institute of surface engineering
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• v.37 no.2
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• pp.92-98
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• 2004

The current efficiency and the microstructure of the trivalent Cr deposits plated in flow cell system were investigated according to additives in sulfate bath and current density. The current efficiency of the deposits plated in the formic acid complexed bath was noticeably higher than that of the deposits from glycine complexed bath. The current efficiency of the deposits from the complexed baths with boric acid buffer increased linearly with current density in the range of 60-100 A/dm$^2$, while that of the deposits from the baths with both Al sulfate and mixed buffers increased parabolically with current density. The nodular crystallite size of the deposits increased with current density, and the deposits plated in low current density region had relatively smooth surface appearance with fine grains. The structure of the deposits from the complexed baths with boric acid buffer changed from amorphous structure to crystalline one with strong (110)peak with increasing current density. The deposits from the baths with both Al sulfate and mixed buffers had generally amorphous structure.

• The Korean Journal of Physiology
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• v.27 no.2
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• pp.151-162
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• 1993

In order to investigate the effect of intracellular cyclic GMP on calcium current the whole-cell patch clamp technique with internal perfusion method was used in isolated ventricular myocytes of the rabbit. Cyclic GMP, 8-bromo-cyclic GMP, cyclic AMP, isoprenaline and forskolin were perfused into cells and their effects on calcium current were analysed by applying depolarizing step pulses of + 10 mV in amplitude far 300 msec from holding potential of - 40 mV. Not only cyclic AMP $(100\;{\mu}M)$ but also cyclic GMF $(100\;{\mu}M)$ increased the basal calcium current. 8-Bromo-cyclic GMP $(100\;{\mu}M)$, a good stimulator of the cyclic GMP-dependent protein kinase, also increased the basal calcium current and its peak amplitude of calcium current was larger than that in the presence of cyclic AMP or cyclic GMP alone. In the presence of $100\;{\mu}M$ cyclic GMP or $100\;{\mu}M$ 8-bromo-cyclic GMP, already augmented calcium current was potentiated by intracellular application of $100\;{\mu}M$ cyclic AMP or $1\;{\mu}M$ isoprenaline or $1\;{\mu}M$ forskolin. In the presence of cyclic GMP, acetylcholine reduced the calcium current only when the calcium current was increased by isoprenaline. From the above results it could be concluded that intracellular perfusion with cyclic GMP increases the basal calcium current via a mechanism involving a cyclic GMP-dependent protein kinase.

• Journal of the Korean Academy of Clinical Electrophysiology
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• v.11 no.1
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• pp.31-38
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• 2013

Purpose : This study was to identify the effect of cognitive reaction following inactive electrode placement when applying anodal transcranial direct current stimulation over the primary motor cortex. Methods : For this study a total of 28 stroke patients participated. Before applying transcranial direct current stimulation, cognitive reaction was measured (P300 of event related potential, cognitive reaction time), and subjects were randomly assigned to two group. Transcranial direct current stimulation was applied to the scalp with an intensity of $0.04mA/cm^2$ for 15 minutes. All subjects were given an anode transcranial direct current stimulation over the primary motor area and inactive electrodes over the deltoid muscle (group I) and supra-orbital area (group II). Cognitive reactions were measured after applying transcranial direct current stimulation. Results : For this study a total of 28 stroke patients participated. Before applying transcranial direct current stimulation, cognitive reaction was measured (P300 of event related potential, cognitive reaction time), and subjects were randomly assigned to two group. Transcranial direct current stimulation was applied to the scalp with an intensity of $0.04mA/cm^2$ for 15 minutes. All subjects were given an anode transcranial direct current stimulation over the primary motor area and inactive electrodes over the deltoid muscle (group I) and supra-orbital area (group II). Cognitive reactions were measured after applying transcranial direct current stimulation. Conclusion : Thus transcranial direct current stimulation on the primary motor area may help cognitive reaction regardless of inactive electrode placement.