• Title/Summary/Keyword: current transport mechanism

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Characterization of Conduction Mechanism in Cu Schottky Contacts to p-type Ge

  • Kim, Se Hyun;Jung, Chan Yeong;Kim, Hogyoung
    • Transactions on Electrical and Electronic Materials
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    • v.15 no.6
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    • pp.324-327
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    • 2014
  • Germanium (Ge) is a promising material for next generation nanoelectronics and multiple junction solar cells. This work investigated the electrical properties in Cu/p-type Ge Schottky diodes, using current-voltage (I-V) measurements. The Schottky barrier heights were 0.66, 0.59, and 0.70 eV from the forward ln(I)-V, Cheung, and Norde methods, respectively. The ideality factors were 1.92 and 1.78 from the forward ln(I)-V method and Cheung method, respectively. Such high ideality factor could be associated with the presence of an interfacial layer and interface states at the Cu/p-Ge interface. The reverse-biased current transport was dominated by the Poole-Frenkel emission rather than the Schottky emission.

Electrochemical Impulse Oscillations at the Platinum Group Electrode Interfaces (백금족 전력 계면에서 전기화학적 Impulse 발진)

  • 전장호;손광철;라극환
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.32A no.3
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    • pp.143-151
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    • 1995
  • The electrochemical impulse oscillations of the cathodic currents at the platinum group (Pt, Pd) electrode/(0.05M KHC$_{8}H_{4}O_{4}$) buffer solution interfaces have been studied using voltammetric, chronoamperometric, and electrochemical impedance methods. The periodic impulses of the cathodic currents are the activation controlled currents due to the hydrogen evolution reaction, and depend on the fractional surface coverage of the adsorbed hydrogen intermediate and potential. The oscillatory mechanism of the cathodic current impulses is connected with the unstable steady state of negative differential resistance. The widths and periods of the cathodic current impulses are 4ms or 5ms and 152.5ms or 305ms, respectively. The H$^{+}$ discharge reaction step is 38 or 61 times faster thatn the recombination reaction steps and the H$^{+}$ mass transport processes. The atom-atom recombination reaction step is twice faster thatn the atom-ion recombination reaction step. The two kinds of active sites corresponding to the atom-atom and atom-ion recombination reaction steps exist on the platinum group electrode surfaces.

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Novel Interface-engineered Junction Technology for Digital Circuit Applications

  • Yoshida, J.;Katsuno, H.;Inoue, S.;Nagano, T.
    • Progress in Superconductivity
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    • v.3 no.1
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    • pp.1-4
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    • 2001
  • Interface-engineered junctions with $YbBa_2$$Cu_3$$O_{7}$ as the counter electrode were demonstrated. The junctions exhibited excellent Josephson characteristics with a Josephson critical current ($I_{c}$) ranging from 0.1 mA to 8 mA and a magnetic field modulation of the $I_{c}$ exceeding 80% at 4.2 K while maintaining complete c-axis orientation of the counter-electrode layer. The$ 1\sigma$ spreads in $I_{c}$ for junctions with an average $I_{c}$ of 1-2 mA were 5-8% for 16 junctions within a chip, and 9.3% for a 100-junction array. Our dI/dV measurements suggest that a theoretical approach taking into account both a highly transparent barrier and the proximity effect is required to fully understand the Junction characteristics.ristics.

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An Empirical Study about the Segmented Cell in Anode Side of PEMFC

  • Kim, Jae-Ho;Sohn, Young-Jun;Kim, Min-Jin;Park, Gu-Gon;Yim, Sung-Dae
    • 한국신재생에너지학회:학술대회논문집
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    • 2009.06a
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    • pp.357-360
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    • 2009
  • The present study focused on the segmented cell which has the similar performance to unaltered (not segmented) cell in real operating condition. Many literatures have been made the segmented cell to observe the behavior of local current density distribution in the single cell. However, it has been lack of scheme to segment the cell in that the detailed interpretation of segmenting in analytic point of view was insufficient. Hence, the basic idea of segmenting was introduced to determine the component to be segmented in anode side of unit cell. The electrical contact/bulk resistance was measured by using four wire/probe method through each part of cell components including MEA, GDL, Bipolar Plate and Current Collector. Electron transport mechanism was predicted by comparing resistance values which were obtained from the experiment. As a result, this offered a great benefit to segment the cell efficiently. With this method further experiments would be conducted in research areas which require current density distribution at the same operating condition as unaltered cell.

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Physics of Solar Flares

  • Magara, Tetsuya
    • The Bulletin of The Korean Astronomical Society
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    • v.35 no.1
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    • pp.26.1-26.1
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    • 2010
  • In this talk we outline the current understanding of solar flares, mainly focusing on magnetohydrodynamic (MHD) processes. A flare causes plasma heating, mass ejection, and particle acceleration which generates high-energy particles. The key physical processes producing a flare are: the emergence of magnetic field from the solar interior to the solar atmosphere (flux emergence), formation of current-concentrated areas (current sheets) in the corona, and magnetic reconnection proceeding in a current sheet to cause shock heating, mass ejection, and particle acceleration. A flare starts with the dissipation of electric currents in the corona, followed by various dynamic processes that affect lower atmosphere such as the chromosphere and photosphere. In order to understand the physical mechanism for producing a flare, theoretical modeling has been develops, where numerical simulation is a strong tool in that it can reproduce the time-dependent, nonlinear evolution of a flare. In this talk we review various models of a flare proposed so far, explaining key features of individual models. We introduce the general properties of flares by referring observational results, then discuss the processes of energy build-up, release, and transport, all of which are responsible for a flare. We will come to a concluding viewpoint that flares are the manifestation of the recovering and ejecting processes of a global magnetic flux tube in the solar atmosphere, which has been disrupted via interaction with convective plasma while rising through the convection zone.

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Physics of Solar Flares

  • Magara, Tetsuya
    • Bulletin of the Korean Space Science Society
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    • 2010.04a
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    • pp.25.1-25.1
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    • 2010
  • This talk outlines the current understanding of solar flares, mainly focusing on magnetohydrodynamic (MHD) processes. A flare causes plasma heating, mass ejection, and particle acceleration that generates high-energy particles. The key physical processes related to a flare are: the emergence of magnetic field from the solar interior to the solar atmosphere (flux emergence), formation of current-concentrated areas (current sheets) in the corona, and magnetic reconnection proceeding in current sheets that causes shock heating, mass ejection, and particle acceleration. A flare starts with the dissipation of electric currents in the corona, followed by various dynamic processes which affect lower atmospheres such as the chromosphere and photosphere. In order to understand the physical mechanism for producing a flare, theoretical modeling has been developed, in which numerical simulation is a strong tool reproducing the time-dependent, nonlinear evolution of plasma before and after the onset of a flare. In this talk we review various models of a flare proposed so far, explaining key features of these models. We show observed properties of flares, and then discuss the processes of energy build-up, release, and transport, all of which are responsible for producing a flare. We come to a concluding view that flares are the manifestation of recovering and ejecting processes of a global magnetic flux tube in the solar atmosphere, which was disrupted via interaction with convective plasma while it was rising through the convection zone.

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Carbonic anhydrase influences asymmetric sodium and acetate transport across omasum of sheep

  • Rabbani, Imtiaz;Rehman, Habib;Martens, Holger;Majeed, Khalid Abdul;Yousaf, Muhammad Shahbaz;Rehman, Zia Ur
    • Animal Bioscience
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    • v.34 no.5
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    • pp.880-885
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    • 2021
  • Objective: Omasum is an important site for the absorption of short chain fatty acids. The major route for the transport of acetate is via sodium hydrogen exchanger (NHE). However, a discrepancy in the symmetry of sodium and acetate transport has been previously reported, the mechanism of which is unclear. In this study, we investigated the possible role of carbonic anhydrase (CA) for this asymmetry. Methods: Omasal tissues were isolated from healthy sheep (N = 3) and divided into four groups; pH 7.4 and 6.4 alone and in combination with Ethoxzolamide. Electrophysiological measurements were made using Ussing chamber and the electrical measurements were made using computer controlled voltage clamp apparatus. Effect(s) of CA inhibitor on acetate and sodium transport flux rate of Na22 and 14C-acetate was measured in three different flux time periods. Data were presented as mean±standard deviation and level of significance was ascertained at p≤0.05. Results: Mucosal to serosal flux of Na (JmsNa) was greater than mucosal to serosal flux of acetate (JmsAc) when the pH was decreased from 7.4 to 6.4. However, the addition of CA inhibitor almost completely abolished this discrepancy (JmsNa ≈ JmsAc). Conclusion: The results of the present study suggest that the additional protons required to drive the NHE were provided by the CA enzyme in the isolated omasal epithelium. The findings of this study also suggest that the functions of CA may be exploited for better absorption in omasum.

Current-Voltage Characteristics of Schottky Barrier SOI nMOS and pMOS at Elevated Temperature (고온에서 Schottky Barier SOI nMOS 및 pMOS의 전류-전압 특성)

  • Ka, Dae-Hyun;Cho, Won-Ju;Yu, Chong-Gun;Park, Jong-Tae
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.46 no.4
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    • pp.21-27
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    • 2009
  • In this work, Er-silicided SB-SOI nMOSFET and Pt-silicided SB-SOI pMOSFET have been fabricated to investigate the current-voltage characteristics of Schottky barrier SOI nMOS and pMOS at elevated temperature. The dominant current transport mechanism of SB nMOS and pMOS is discussed using the measurement results of the temperature dependence of drain current with gate voltages. It is observed that the drain current increases with the increase of operating temperature at low gate voltage due to the increase of thermal emission and tunneling current. But the drain current is decreased at high gate voltage due to the decrease of the drift current. It is observed that the ON/Off current ratio is decreased due to the increased tunneling current from the drain to channel region although the ON current is increased at elevated temperature. The threshold voltage variation with temperature is smaller and the subthreshold swing is larger in SB-SOI nMOS and pMOS than in SOI devices or in bulk MOSFETs.

Estimation of Electrical Parameters of OD Organic Semiconductor Diode from Measured I-V Characteristics

  • Moiz, Syed Abdul;Ahmed, Mansoor M.;Karimov, Kh. S.
    • ETRI Journal
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    • v.27 no.3
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    • pp.319-325
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    • 2005
  • In this paper the effect of temperature on the electrical properties of organic semiconductor disperse orange dye 25 (OD) have been examined. Thin films of OD have been deposited on $In_{2}O_{3}$ substrates using a centrifugal machine. DC current-voltage (I-V) characteristics of the fabricated devices $(Al/OD/In_{2}O_{3)$ have been evaluated at varying temperatures ranging from 40 to $60^{\circ}C$. A rectification behavior in these devices has been observed such that the rectifying ratio increases as a function of temperature. I-V characteristics observed in $Al/OD/In_{2}O_{3)$ devices have been classified as low temperature $({\leq} 50^{\circ}C)$ and high temperature characteristics (approximately $60^{\circ}C$). Low temperature characteristics have been explained on the basis of the charge transport mechanism associated with free carriers available in OD, whereas high temperature characteristics have been explained on the basis of the trapped space-charge-limited current. Different electrical parameters such as traps factor, free carrier density, trapped carrier density, trap density of states, and effective mobility have been determined from the observed temperature dependent I-V characteristics. It has been shown that the traps factor, effective mobility, and free carrier density increase with increasing values of temperature, whilst no significant change has been observed in the trap density of states.

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A Seasonal Circulation in the East China Sea and the Yellow Sea and its Possible Cause

  • Oh, Kyung-Hee;Pang, Ig-Chan
    • Journal of the korean society of oceanography
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    • v.35 no.4
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    • pp.161-169
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    • 2000
  • A seasonal circulation in the East China Sea and the Yellow Sea and its possible cause have been studied with CSK data during 1965-1989. Water mass distributions are clear in winter, but not in summer because the upper layer waters are quite influenced by atmosphere. To solve the problem, a water mass analysis by mixing ratio is used for the lower layer waters. The results show that the distribution of Tsushima Warm Current Water expands to the Yellow Sea in winter and retreats to the East China Sea in summer. It means that there is a very slow seasonal circulation between the East China Sea and the Yellow Sea: Tsushima Warm Current Water flows into the Yellow Sea in winter and coastal water flows out of the Yellow Sea in summer. By the circulation, the front between Tsushima Warm Current Water and coastal water moves toward the shelf break in summer so that the flow is faster in the deeper region. The process eventually makes the transport in the Korea Strait increase. The Kuroshio does not seem to influence the process. A possible mechanism of the process is the seasonal change of sea surface slope due to different local effects of surface heating and diluting between the East China Sea and the Yellow Sea.

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