• The Journal of Korean Institute of Communications and Information Sciences
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• v.34 no.5B
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• pp.542-551
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• 2009

We proposed the context based user profile which is aware of its user's situation and based on user's situation it recommends personalized services. The user profile which consists of (context, service) pair can be acquired by the context and the service usage of a user; it then can be used to recommend personalized services for the user. In this paper, we show how they can be evolved without previously known user information so that not to violate privacy during the learning phase; in the result our user profile can be applied to any new environment without any modification to model only except context profiles. Using context-awareness based user profile, the service usage pattern of a user can be learned by the union of contexts and the preferred services can be recommended by the current environments. Finally, we evaluate the precision of proposed approach using simulation with data sets of UCI depository and Weka tool-kit.

• The Journal of the Korea institute of electronic communication sciences
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• v.17 no.6
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• pp.1175-1180
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• 2022

STI has been studied a lot as a process technology for wide area planarization according to miniaturization and high integration of semiconductor devices. In this study, as methods for improving the STI profile, wet etching of pad oxide using hydrofluorine solution and dry etching of O₂+CF₄ after STI dry etching were proposed. This process technology showed improvement in profile imbalance and leakage current between patterns according to device density compared to the conventional method. In addition, as a result of measuring the HLD thickness after CMP for a device having the same STI depth and HLD deposition, the measured value was different depending on the device density. It was confirmed that this was due to the difference in the thickness of the nitride film according to the device density after CMP and the selectivity of the slurry.

• The Transactions of the Korean Institute of Electrical Engineers B
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• v.54 no.10
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• pp.470-476
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• 2005

In this paper PU control scheme is presented. The proposed scheme has following features. The one is oft-starting method which is used for preventing to flow large current in motor phase winding when motor starts. The ther is the selection of the level of the over current. The first feature is implemented by increasing the PWM duty lowly, the second feature is implemented by limiting the magnitude of the phase current level by which the over heat f motor by copper losses and magnetic saturation decreases. By the analysis using FEM considering load condition, the peed of mode transition from PW to single pulse control is selected and confirmed by simulation that there is no ver current occurs during the mode transition. For the verification of proposed scheme, the simulation using MATLAB Simulink with considering non-linearity of inductance profile from FEM analysis is performed and the experiment with SRM drive system which has the DSP controller and single Phase SRM are peformed.

• Progress in Superconductivity
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• v.11 no.2
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• pp.128-134
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• 2010

The magnetic flux profiles in SmBCO and YBCO coated conductors(CC) in the presence of the external field were comparatively investigated by magneto-optic image and scanning hall probe measurements. The current distributions calculated by using the inversion method from measured field profiles show that the decrease of current densities near the edges of SmBCO CC is more significant than those of YBCO CC. Through the comparison of the numerical analysis based on Kim's critical state model and the Brandt and Indenbom's solution, we found that this feature is related to their different field dependant properties of the critical current densities.

• ETRI Journal
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• v.39 no.6
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• pp.859-865
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• 2017

This paper presents a method for determining the optimum active-area width (OAW) of solar cells in a module architecture. The current density-voltage curve of a reference cell with a narrow active-area width is used to reproduce the current density profile in the test cell whose active area width is to be optimized. We obtained self-consistent current density and electric potential profiles from iterative calculations of both properties, considering the distributed resistance of the contact layers. Further, we determined the OAW that yields the maximum efficiency by calculating efficiency as a function of the active-area width. The proposed method can be applied to the design of the active area of a dye-sensitized solar cell in Z-type series connection modules for indoor and building-integrated photovoltaic systems. Our calculations predicted that OAW increases as the sheet resistances of the contact layers and the intensity of light decrease.

• The Bulletin of The Korean Astronomical Society
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• v.41 no.1
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• pp.46.1-46.1
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• 2016

The formation process of a current sheet is important for solar flare from a viewpoint of a space weather prediction. We therefore derive the temporal development of the spatial and statistical distribution of electric current density distributed in a flare-producing active region to describe the formation of a current sheet. We derive time sequence distribution of electric current density by applying a nonlinear force-free approximation reconstruction to Active Region 12158 that produces an X1.6-class flare. The time sequence maps of photospheric vector magnetic field used for reconstruction are captured by a Helioseismic and Magnetic Imager (HMI) onboard Solar Dynamic Observatory (SDO) on 10th September, 2014. The spatial distribution of electric current density in NLFFF model well reproduce observed sigmoidal structure at the preflare phase, although a layer of high current density shrinks at the postflare phase. A double power-law profile of electric current density is found in statistical analysis. This may be expected to use an indicator of the occurrence of a solar flare.

• International Journal of Aeronautical and Space Sciences
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• v.17 no.3
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• pp.391-400
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• 2016

In satellite operations, stable maneuvering of a satellite's onboard antenna to prevent undesirable vibrations to the satellite body is required for high-quality high-resolution images. For this reason, the onboard antenna's angular rate is typically minimized while still satisfying the system requirement that limits the speed of the onboard antenna. In this study, a simple yet effective method, called the ground station searching method, is proposed to reduce the angular rate of a satellite's onboard antenna. The performance of the proposed method is tested using real flight data from the KOMPSAT-3 satellite. Approximately 83% of arbitrarily selected real flight scenarios from 66 test cases show reductions in the onboard antenna's azimuth angular rates. Additionally, reliable solutions were consistently obtained within a reasonably acceptable computation time while generating an onboard antenna tracking profile. The obtained results indicate that the proposed method can be used in real satellite operations and can reduce the operational loads on a ground operator. Although the current work only considers the KOMPSAT-3 satellite as a test case, the proposed method can be easily modified and applied to other satellites that have similar operational characteristics.

• Korean Journal of Optics and Photonics
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• v.10 no.5
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• pp.373-378
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• 1999

White light scanning interferometry is increasingly used for precision profile metrology of engineering surfaces, but its current application is primarily limited to opaque surfaces with relatively simple optical reflection behaviors. In this paper, a new attempt is made to extend the interferometric method to the thickness profile measurement of transparent thin film layers. An extensive frequency domain analysis of multiple reflection is performed to allow both the top and bottom interfaces of a thin film layer to be measured independently at the same time using nonlinear least squares technique. This rigorous approach provides not only point-by-point thickness probing but also complete volumetric film profiles digitized in three dimensions.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.5 no.1
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• pp.13-15
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• 2004

The current driven in an MOSFET is limited by the intrinsic channel resistance. All the other parasitic elements in a device structure play a significant role and degrade the device performance. These other resistances need to be less than 15％ of the channel resistance. To achieve the requirements, we should investigate the methodology of separation and quantification of those resistances. In this paper, we developed the extraction method of resistances using calibrated TCAD simulation. The resistance of the extension region is also partially determined by the formation of a surface accumulation region that forms under the gate in the tail region of the extension profile. This resistance is strongly affected by the abruptness of the extension profile because the steeper the profile is, the shorter this accumulation region will be.

• Journal of the Korean institute of surface engineering
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• v.27 no.3
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• pp.158-165
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• 1994

Cu-Cr alloy thin film requires good quality of etching be used for TAB technology. The etched cross sec-tion was clean enough when the etching was performed in 0.1M $FeCl_3$ solution at $50^{\circ}C$. The etching rate was increased with the amount of $KMnO_4$. For enhanced profile of cross section and rate, the spray etchning was found to be superior compared to the immersion etching. A series of experiments were performed to improve the uniformity of the current distribution in electrodeposition onto the substrate with lithographic patterns. Copper was electrodeposited from quiescent-solution, paddle-agitated-solution, and air-bubbled-solution to in-vestigate the effect of the fluid flow. The thickness profile of the specimen measured by profilmetry has the non uniformity at feature scale in quiescent-solution, because of the longitudinal vortex roll caused by the natural convection. However, uniform thickness profile was achieved in paddle-agitated or air bubbled solu-tion.