• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권2호
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• pp.116-119
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• 2000

A hybrid SOI bipolar-mode field effect transistor (BMFET) is proposed to improve the current gain. The device characteristics are analyzed and verified numerically for BMFET mode, DMOS mode, and hybrid mode by MEDICI simulation. The proposed SOI BMFET exhibits 30 times larger current gain in hybrid-mode operation by connecting DMOS gate to the p+ gate of BMFET structure as compared with the conventional structure without sacrifice of breakdown voltage and leakage current characteristics. This is due to the DMOS-gate-induced hybrid effect that lowers the barrier of p-body and reduces the charge in p-body.

• 한국전자통신학회논문지
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• 제8권10호
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• pp.1477-1483
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• 2013

연속시간 전류모드 기저대역 채널선택 필터 설계를 위하여 전류이득과 단위이득 주파수를 개선시킨 저전압 선형 캐스코드 전류모드 적분기를 제안하였다. 제안된 전류모드 적분기는 CMOS 상보형 회로로 구성된 완전 차동 형태의 입 출력단으로 구성하였으며, 여기에 캐스코드 트랜지스터를 추가시킴으로써 바이어스 단을 구성하여 선형영역에서 동작시켜 저전압 구조에 적합하도록 설계하였다. 이 때 바이어스 전압을 선택적으로 제어하여 주파수 대역이 가변될 수 있도록 설계하였다. 시뮬레이션 결과를 통해 설계한 선형 캐스코드 전류모드 적분기가 저전압 동작, 전류 이득 및 단위이득 주파수 등 모두 만족할 만한 특성을 가지고 있음을 확인하였다.

• 전기학회논문지
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• 제60권11호
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• pp.2049-2055
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• 2011

In this paper a new current control method is proposed for the discontinuous conduction mode of boost converter. The proposed method using a current gain feedforward compensation adjusts a measured inductor current value and then, calculated an average current precisely in the discontinuous conduction mode as well as continuous conduction mode. By applying the proposed method, the current measurement error is significantly reduced to 2% regardless of the operating points. The proposed method is analyzed and its performance is investigated in simulation. To verify the feasibility of the proposed scheme, a 10kW 3-phase interleaved boost converter was built and experimental results are matched to the simulation results.

• 대한의용생체공학회:학술대회논문집
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• 대한의용생체공학회 1997년도 춘계학술대회
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• pp.457-460
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• 1997

The photoconductive gain mechanism in various types of hydrogenated amorphous silicon devices, such as p-i-n, n-i-n and n-i-p-i-n structures was investigated in connection with applications to radiation detection. We measured the photoconductive gain in two time scales: one for short pulses of visible light $(<1{\mu}sec)$ which simulate the transit of energetic charged particles, and the other for rather long pulses of light $(\sim1msec)$ which simulate x-ray exposure in medical imaging. We used two definitions of photoconductive gain: current gain and charge gain which is an integration of the current gain. We found typical charge gains of $3\sim9$ for short pulses and a few hundred for long pulses at a dark current density level of $10mA/cm^2$.

• 한국산학기술학회논문지
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• 제10권12호
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• pp.3614-3621
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• 2009

본 논문에서는 이득 및 주파수 특성이 개선된 CMOS 저전압 전류모드 적분기가 설계되었다. 설계된 전류모드 적분기는 본 논문에서 새롭게 제안한 선형 캐스코드 회로를 기본으로 구성되었다. 제안된 전류모드 적분기는 기존의 전류미러형 전류모드 적분기의 이득(43.7dB) 및 단위이득주파수(15.2MHz) 비해서 높은 전류이득(47.8dB) 및 단위 이득 주파수(27.8MHz)의 특성을 얻을 수 있었다. 제안된 전류모드 적분기의 응용회로로써 차단주파수 7.03MHz를 갖는 5차 체비세프 저역통과 필터를 설계하였다. 설계된 모든 회로들은 1.8V-$0.18{\mu}m$ CMOS 공정파라메터로써 HSPICE를 이용하여 시뮬레이션되었다.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2019년도 전력전자학술대회
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• pp.412-413
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• 2019

This paper deals with the comparisons of gain design of current controller with the first order lag characteristics. Usually the current controller for motor drives and PCSs has the first order lag characteristics to avoid the current overshoot. This paper suggests a new inductor current controller for the PCSs and also compares with other two current controllers. The simulation results show that the proposed design method also gives the first order lag characteristics and can be used as an alternative current controller for PCSs.

• JSTS:Journal of Semiconductor Technology and Science
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• 제13권4호
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• pp.263-271
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• 2013

A low dropout regulator (LDO) with fast transient responses is presented. The proposed LDO eliminates the trade-off between slew rate and unity gain bandwidth, which are the key parameters for fast transient responses. In the proposed buffer, by changing the slew current path, the slew rate and unity gain bandwidth can be controlled independently. Implemented in $0.18-{\mu}m$ high voltage CMOS, the proposed LDO shows up to 200 mA load current with 0.2 V dropout voltage for $1{\mu}F$ output capacitance. The measured maximum transient output voltage variation, minimum quiescent current at no load condition, and maximum unity gain frequency are 24 mV, $7.5{\mu}A$, and higher than 1 MHz, respectively.

• Journal of Power Electronics
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• 제11권4호
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• pp.599-605
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• 2011

This paper proposes a gain scheduling method that improves the stability of grid-connected systems employing an LCL-filter. The method adjusts the current controller gain through an estimation of the grid impedance in order to reduce the resonance that occurs when using an LCL-filter to reduce switching harmonics. An LCL-filter typically has a frequency spectrum with a resonance peak. A change of the grid-impedance results in a change to the resonant frequency. Therefore an LCL-filter needs a damping method that is applicable when changing the grid impedance for stable system control. The proposed method instantaneously estimates the grid impedance and observes the resonant frequency at the same time. Consequently, the proposed method adjusts the current controller gain using a gain scheduling method in order to guarantee current controller stability when a change in the resonant frequency occurs. The effectiveness of the proposed method has been verified by simulations and experimental results.

• ETRI Journal
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• 제28권3호
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• pp.386-388
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• 2006

Monolithic SiGe heterojunction bipolar transistor (HBT) variable gain amplifiers (VGAs) with a feedforward configuration have been newly developed for 5 GHz applications. Two types of the feedforward VGAs have been made: one using a coupled-emitter resistor and the other using an HBT-based current source. At 5.2 GHz, both of the VGAs achieve a dynamic gain-control range of 23 dB with a control-voltage range from 0.4 to 2.6 V. The gain-tuning sensitivity is 90 mV/dB. At $V_{CTRL}$= 2.4 V, the 1 dB compression output power, $P_{1-dB}$, and dc bias current are 0 dBm and 59 mA in a VGA with an emitter resistor and -1.8 dBm and 71mA in a VGA with a constant current source, respectively.

• ETRI Journal
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• 제17권1호
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• pp.1-10
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• 1995

We have achieved very low threshold current densities with high light output powers for InGaAs/ GaAs surface-emitting lasers using a periodic gain active structure in which three quantum wells are inserted in two-wavelength-thick (2${\lambda}$ ) cavity. Air-post type devices with a diameter of 20~40${\mu}m$ exhibit a threshold current density of 380~410$A/cm^2$. Output power for a 40${\mu}m$ diameter device reaches over 11 mW. A simple theoretical calculation of the threshold and power performances indicates that the periodic gain structure has an advantage in achieving low threshold current density mainly due to the high coupling efficiency between gain medium and optical field. The deterioration of power, expected from the long cavity length of $2{\lambda}$, is negligible.