• Title/Summary/Keyword: cubic number field

Search Result 24, Processing Time 0.021 seconds

Non-monotonic Size Dependence of Electron Mobility in Indium Oxide Nanocrystals Thin Film Transistor

  • Pham, Hien Thu;Jeong, Hyun-Dam
    • Bulletin of the Korean Chemical Society
    • /
    • v.35 no.8
    • /
    • pp.2505-2511
    • /
    • 2014
  • Indium oxide nanocrystals ($In_2O_3$ NCs) with sizes of 5.5 nm-10 nm were synthesized by hot injection of the mixture precursors, indium acetate and oleic acid, into alcohol solution (1-octadecanol and 1-octadecence mixture). Field emission transmission electron microscopy (FE-TEM), High resolution X-Ray diffraction (X-ray), Nuclear magnetic resonance (NMR), and Fourier transform infrared spectroscopy (FT-IR) were employed to investigate the size, surface molecular structure, and crystallinity of the synthesized $In_2O_3$ NCs. When covered by oleic acid as a capping group, the $In_2O_3$ NCs had a high crystallinity with a cubic structure, demonstrating a narrow size distribution. A high mobility of $2.51cm^2/V{\cdot}s$ and an on/off current ratio of about $1.0{\times}10^3$ were observed with an $In_2O_3$ NCs thin film transistor (TFT) device, where the channel layer of $In_2O_3$ NCs thin films were formed by a solution process of spin coating, cured at a relatively low temperature, $350^{\circ}C$. A size-dependent, non-monotonic trend on electron mobility was distinctly observed: the electron mobility increased from $0.43cm^2/V{\cdot}s$ for NCs with a 5.5 nm diameter to $2.51cm^2/V{\cdot}s$ for NCs with a diameter of 7.1 nm, and then decreased for NCs larger than 7.1 nm. This phenomenon is clearly explained by the combination of a smaller number of hops, a decrease in charging energy, and a decrease in electronic coupling with the increasing NC size, where the crossover diameter is estimated to be 7.1 nm. The decrease in electronic coupling proved to be the decisive factor giving rise to the decrease in the mobility associated with increasing size in the larger NCs above the crossover diameter.

Program Development to Evaluate Permeability Tensor of Fractured Media Using Borehole Televiewer and BIPS Images and an Assessment of Feasibility of the Program on Field Sites (시추공 텔리뷰어 및 BIPS의 영상자료 해석을 통한 파쇄매질의 투수율텐서 계산 프로그램 개발 및 현장 적용성 평가)

  • 구민호;이동우;원경식
    • The Journal of Engineering Geology
    • /
    • v.9 no.3
    • /
    • pp.187-206
    • /
    • 1999
  • A computer program to numerically predict the permeability tensor of fractured rocks is developed using information on discontinuities which Borehole Televiewer and Borehole Image Processing System (BIPS) provide. It uses orientation and thickness of a large number of discontinuities as input data, and calculates relative values of the 9 elements consisting of the permeability tensor by the formulation based on the EPM model, which regards a fractured rock as a homogeneous, anisotropic porous medium. In order to assess feasibility of the program on field sites, the numerically calculated tensor was obtained using BIPS logs and compared to the results of pumping test conducted in the boreholes of the study area. The degree of horizontal anisotropy and the direction of maximum horizontal permeability are 2.8 and $N77^{\circ}CE$, respectively, determined from the pumping test data, while 3.0 and $N63^{\circ}CE$ from the numerical analysis by the developed program. Disagreement between two analyses, especially for the principal direction of anisotropy, seems to be caused by problems in analyzing the pumping test data, in applicability of the EPM model and the cubic law, and in simplified relationship between the crack size and aperture. Aside from these problems, consideration of hydraulic parameters characterizing roughness of cracks and infilling materials seems to be required to improve feasibility of the proposed program. Three-dimensional assessment of its feasibility on field sites can be accomplished by conducting a series of cross-hole packer tests consisting of an injecting well and a monitoring well at close distance.

  • PDF

A Numerical Solution Method of the Boundary Integral Equation -Axisymmetric Flow- (경계적분방정식의 수치해법 -축대칭 유동-)

  • Chang-Gu,Kang
    • Bulletin of the Society of Naval Architects of Korea
    • /
    • v.27 no.3
    • /
    • pp.38-46
    • /
    • 1990
  • A numerical solution method of the boundary integral equation for axisymmetric potential flows is presented. Those are represented by ring source and ring vorticity distribution. Strengths of ring source and ring vorticity are approximated by linear functions of a parameter $\zeta$ on a segment. The geometry of the body is represented by a cubic B-spline. Limiting integral expressions as the field point tends to the surface having ring source and ring vorticity distribution are derived upto the order of ${\zeta}ln{\zeta}$. In numerical calculations, the principal value integrals over the adjacent segments cancel each other exactly. Thus the singular part proportional to $\(\frac{1}{\zeta}\)$ can be subtracted off in the calculation of the induced velocity by singularities. And the terms proportional to $ln{\zeta}$ and ${\zeta}ln{\zeta}$ can be integrated analytically. Thus those are subtracted off in the numerical calculations and the numerical value obtained from the analytic integrations for $ln{\zeta}$ and ${\zeta}ln{\zeta}$ are added to the induced velocity. The four point Gaussian Quadrature formula was used to evaluate the higher order terms than ${\zeta}ln{\zeta}$ in the integration over the adjacent segments to the field points and the integral over the segments off the field points. The root mean square errors, $E_2$, are examined as a function of the number of nodes to determine convergence rates. The convergence rate of this method approaches 2.

  • PDF

Crystal Structure and Electrical Transport Characteristics of ${La_{1-x}}{Sr_x}{MnO_{3-{\delta}}}$(0.19$\leq$x$\leq$0.31) Thin Films (${La_{1-x}}{Sr_x}{MnO_{3-{\delta}}}$(0.19$\leq$x$\leq$0.31) 박막의 결정구조 및 전기전도 특성)

  • Heo, H.;Lim, S.J.;Cho, N-H.
    • Korean Journal of Materials Research
    • /
    • v.10 no.6
    • /
    • pp.437-444
    • /
    • 2000
  • We investigated the effect of substrate temperature, chemical composition and post-deposition heat-treatment on the crystal structure and electrical transport of $La_{1-x}Sr_xMnO_{3-{\delta}}$(0.19${\leq}x{\leq}$0.31) thin films. As-prepared $La_{1-x}Sr_xMnO_{3-{\delta}}$ films grown at $500^{\circ}C$ by sputter techniques were found to have the pseudo-tetragonal system(a/c=0.97) and a highly preferential <001> orientation. The films were changed to be of the cubic system by post-deposition annealing at around $900^{\circ}C$. A main target of $La_{0.67}Sr_{0.33}MnO_3$ as well as auxliary targets of $La_{0.3}Sr_{0.7}MnO_3$ ceramics were co-sputtered to control the chemical composition of the film. The Sr content(x) of the film ranged from 0.19 to 0.31, depending on the number of the auxiliary target. When x increased from 0.19 to 0.31, the electrical resistivity of the film decreased and the transition temperature between metal and semiconductor shifted to higher temperature. With a magnetic field of 0.18 T, the magneto-resistance ratio (MR(%) = (${\rho}_o-{\rho}_H/{\rho}_H$) of the $La_{0.69}Sr_{0.31}MnO_3$ thin film was about 390%.

  • PDF