• Title/Summary/Keyword: cubic boron nitride

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A Study on Environment- Friendly Grinding by Using Cold Air (냉각 공기장치에 의한 환경 친화 연삭 연구)

  • 김남경;이동호;성낙창;송지복
    • Journal of the Korean Society for Precision Engineering
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    • v.15 no.9
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    • pp.145-151
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    • 1998
  • In this study, the experimental and analytic investigation with cold air system has been performed for improving the working environment of the conventional grinding fluid. Very simple cold air system was developed which could replace by the conventional grinding fluid system. The identification of heat of grinding Bone is very important for precision grinding. The experimental data was analysed to investigate the heat which was transferred to the workpiece. It was found that 45∼55% of the total energy for dry grinding, 22∼28% for wet grinding, and 32∼35% for cold air system are conducted to the workpiece in grinding with cubic boron nitride wheel. Cubic boron nitride wheel could reduce the residual stress and thermal demage comparing with aluminium oxide wheel, because cubic boron nitride wheel has very high extreme thermal conductivity.

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Synthesis of Boron-Nitride Film by Plasma Assisted Chemical Vapor Deposition Using $BCl3-NH3-Ar$ Mixed Gas ($BCl3-NH3-Ar$계의 플라즈마화학증착공정을 이용한 질화붕소막의 합성)

  • 박범수;백영준;은광용
    • Journal of the Korean Ceramic Society
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    • v.34 no.3
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    • pp.249-256
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    • 1997
  • The effect of process parameter of plasma assisted chemical vapor deposition (PACVD) on the variation of the ratio between cubic boron nitride (c-BN) and hexagonal boron nitride (h-BN) in the film was in-vestigated. The plasma was generated by electric power with the frequency between 100 and 500 KHz. BCl3 and NH3 were used as a boron and nitrogen source respectively and Ar and hydrogen were added as a car-rier gas. Films were composed of h-BN and c-BN and its ratio varied with the magnitude of process parameters, voltage of the electric power, substrate bias voltage, reaction pressure, gas composition, sub-strate temperature. TEM observation showed that h-BN phase was amorphous while crystalline c-BN par-ticle was imbedded in h-BN matrix in the case of c-BN and h-BN mixed film.

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유도결합 플라즈마 화학 기상 증착법을 이용한 cubic boron nitride 박막 증착에 관한 연구

  • 남경희;이승훈;홍승찬;이정중
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2003.10a
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    • pp.52-52
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    • 2003
  • cubic boron nitride(cubic BN)는 기계적, 전기적, 광학적, 열적으로 우수한 특성 때문에 다양한 분야에 응용 가능한 재료로, 수 십년 동안 연구되어 오고 있다. 그러나 아직까지 막내 cubic BN이 차지하는 함량과 접착력의 저조 때문에 실제로 응용되기에는 무리가 있다. 많은 이들이 이 문제점들을 해결하기 위해 노력하고 있다. Cubic BN의 생성 매카니즘에 관해서는 여러 모델들이 제시되고 있으나 아직까지 정론화된 것은 없다. 대표적인 모델들로는 스퍼터 모델, 스트레스 모델, 서브플렌테이션 모델 등이 있다. 그러나 BN 막내의 구조가 hexagal BN과 cubic BN이 혼합되어 있는 구조라는 것과 cubic BN이 형성되기 위해서는 이온 충돌 에너지가 필요하다는 점은 모든 모델들에서 일반적으로 취하고 있다. 본 연구에서는, 유도 결합 플라즈마 화학 기상 증착법을 이용해 cubic BN 박막을 증착하였다. 소스 가스로는 BCl$_3$, $N_2$, H$_2$, Ar를 사용하였다. 기판에 가해지는 R.F. 바이어스가 박막내 cubic BN의 함량에 어떠한 영향을 미치는 지에 대해 연구하였다. cubic BN 상의 확인은 FT-IR 장비로 분석하였고, 막내 조성은 AES로, 박막의 두께는 FE-SEM으로 확인하였다.

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Synthesis of Cubic Boron Nitride by Al-Mg Solvents

  • Park, Jong-Ku;Park, S.T.;S.K. Singhal;S. J. Cui;K. Y. Eun
    • The Korean Journal of Ceramics
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    • v.3 no.3
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    • pp.187-190
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    • 1997
  • The aluminum-magnesium (Al-Mg) aklloys have been proved to be an effective solvent for synthesis of cubic-phase boron nitride (cBN) from hexagonal-phase boron nitride (hBN) at the conditions of high pressures and high temperatures (HP/HT). Various kinds of hBN powders having different crystallinity have been tested for cBN synthesis with Al-Mg solvents. The conversion ratio from hBN to cBN and the shape of synthesized cBN crystals appeared to be affected strongly by chemical composition and added amount of Al-Mg solvents as well as crystallinity of BN powders. As the magnesium content increased in the Al-Mg solvents, the conversion ratio increased and the size of cBN crystals became larger. The crystal facets developed well in the specimens with solvents having high Mg content. It was observed that a hBNlongrightarrowcBN transformation occurred more easily in the specimens having well crystallized hBN powders. Amorphous BN having much $B_2O_3$ impurity exhibited a low threshold temperature for transformation to cBN, which was attributed to crystallization of amorphous BN to well crystallized hBN prior to transformation into cBN with help of $B_2O_3$.

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Study on Dressing Conditions for Creep-feed in Cubic Boron Nitride Grinding of OrthoMTA Compacters (OrthoMTA 컴팩터의 크리프피드 CBN 연삭을 위한 드레싱 조건 연구)

  • Maeng, Heeyoung;Baek, Eun-Pyo
    • Journal of the Korean Society of Manufacturing Technology Engineers
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    • v.23 no.1
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    • pp.69-74
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    • 2014
  • An OrthoMTA compacter is made by machining a Ni-Ti alloy wire using tapered helix creep-feed grinding machines. This aim of this study is to find the optimal dressing conditions to sharpen the corner of a cubic boron nitride (CBN) wheel. On the basis of the results of various experiments, it is verified that the most important factors in dressing are the dressing depth and feeding method, whereas the feed rate has less importance for producing a smaller corner R value. The study also finds the optimum dressing depth to reduce the dressing time, a feeding speed and method to stabilize the machining, and the mesh grade for the CBN wheel to make the groove of the compacter deeper.

Effect of residual oxygen in a vacuum chamber on the deposition of cubic boron nitride thin film

  • Oh, Seung-Keun;Kang, Sang Do;Kim, Youngman;Park, Soon Sub
    • Journal of Ceramic Processing Research
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    • v.17 no.7
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    • pp.763-767
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    • 2016
  • The structural characterization of cubic boron nitride (c-BN) thin films was performed using a B4C target in a radio-frequency magnetron sputtering system. The deposition processing conditions, including the substrate bias voltage, substrate temperature, and base pressure were varied. Fourier-transform infrared spectroscopy and X-ray photoelectron spectroscopy were used to analyze the crystal structures and chemical binding energy of the films. For the BN film deposited at room temperature, c-BN was formed in the substrate bias voltage range of -400 V to -600 V. Less c-BN fraction was observed as the deposition temperature increased, and more c-BN fraction was observed as the base pressure increased.