• 한국표면공학회지
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• 제43권1호
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• pp.7-11
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• 2010

Solid phase crystallization (SPC) is a simple method in producing a polycrystalline phase by annealing amorphous silicon (a-Si) in a furnace environment. Main motivation of the crystallization technique is to fabricate low temperature polycrystalline silicon thin film transistors (LTPS-TFTs) on a thermally susceptible glass substrate. Studies on SPC have been naturally focused to the low temperature regime. Recently, fabrication of polycrystalline silicon (poly-Si) TFT circuits from a high temperature polycrystalline silicon process on steel foil substrates was reported. Solid phase crystallization of a-Si films proceeds by nucleation and growth. After nucleation polycrystalline phase is propagated via twin mediated growth mechanism. Elliptically shaped grains, therefore, contain intra-granular defects such as micro-twins. Both the intra-granular and the inter-granular defects reflect the crystallinity of SPC poly-Si. Crystallinity and SPC kinetics of high temperatures were compared to those of low temperatures using Raman analysis newly proposed in this study.

• 한국세라믹학회지
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• 제37권1호
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• pp.50-56
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• 2000

Precursor gels with the composition of xZrO2·(100-x)SiO2 systems (x=10, 20 and 30 mol%) were prepared by the sol-gel method. Kinetic parameters, such as activation energy, Avrami's exponent, n, and dimensionality crystal growth value, m, have been simultaneously calculated from the DTA data using Kissinger and Matusita equations. The crystallite size dependence of tetragonal to monoclinic transformation of ZrO2 was investigated using XRD, in relation to the fracture toughness. The crystallization of tetragonal ZrO2 occurred through 3-dimensional diffusiion controlled growth(n=m=2) and the activation energy for crystallization was calculated using Kissinger and Matusita equations, as about 310∼325±10kJ/mol. The growth of t-ZrO2, in proportion to the cube of radius, increased with increasing heating temperature and hteat-treatment time. It was suggested that the diffusion of Zr4+ ions by Ostwald ripening was rate-limiting process for thegrowth of t-ZrO2 crystallite size. The fracture toughness of xZrO2·(100-x)SiO2 systems glass ceramics increased with increasing crystallite size of t-ZrO2. The fracture toughness of 30ZrO2·70SiO2 system glass ceramics heated at 1,100℃ for 5h was 4.84 MPam1/2 at a critical crystaliite size of 40 nm.

• 폴리머
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• 제36권6호
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• pp.803-809
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• 2012

에틸렌-테트라플르오르에틸렌(ETFE) 공중합체의 비등온 결정화 거동을 DSC와 imaging FTIR을 이용하여 살펴보았다. 변형 비등온 Avrami 분석 결과, DSC에 의한 열분석의 경우 상대적으로 적은 결정화 엔탈피 변화로 인하여 Avrami 식에 의한 ln[-ln(1-X(t))] vs. ln(t) 곡선이 선형을 이루지 못하는 반면, 결정화에 의한 IR 흡수 강도 image의 변화에 의한 분석 방법인 imaging FTIR의 경우보다 선형적인 결과를 얻음에 따라 imaging FTIR이 ETFE 비등온 결정화 연구에 보다 효과적임을 알 수 있었다. 이와 함께 비등온 결정화에 의한 ETFE의 광학특성을 살펴본 결과, 서냉에 의하여 형성된 ETFE 결정의 빛 산란에 의하여 haze가 증가하며 따라서 투명도가 감소함을 알 수 있으며 비등온 결정화에 의하여 최대 8%의 투과도 감소가 일어남을 확인할 수 있었다. 이상의 결과로부터 결정화를 조절하는 냉각속도가 유리 대체 소재로 사용되고 있는 ETFE 필름의 광투과도 조절에 주요한 가공 변수임을 확인할 수 있었다.

• Composites Research
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• 제24권4호
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• pp.5-10
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• 2011

환경오염이 나날이 증가함에 따라 바이오 재료에 대한 관심이 커지고 있다. 본 연구에서는 생분해성 열가소성 수지인 폴리 유산 (PLA)을 기지재료로 하고 탄소나노튜브 (CNT)를 나노 filler로 사용하여 압출 및 사출공정을 통하여 복합재료를 제작하였다. 시편의 결정화도를 변화시키기 위하여 어닐링 시간에 변화를 주어 처리하였다. PLA의 결정화 특성은 시차주사열량계 (DSC)를 통하여 평가하였고, 적당한 양의 CNT가 PLA의 결정화 속도를 향상시킨 것을 확인할 수 있었다. 그 외에 PLA/CNT 복합재료의 가수분해 속도는 순수 PLA에 비하여 빠르지만 PLA/CNT 복합재료의 결정화도가 증가함에 따라 가수분해 속도가 늦어지는 것을 확인할 수 있었다. 이것은 가수분해가 PLA/CNT의 계면에서 쉽게 일어나고 결정화도가 높아짐에 따라 분자 구조가 치밀해지기 때문인 것으로 판단 된다.

• 한국분말재료학회지
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• 제16권1호
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• pp.9-15
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• 2009

Amorphization and crystallization behaviors of $Ti_{50}Cu_{50}Ni_{20}Al_{10}$ powders during high-energy ball milling and subsequent heat treatment were studied. Full amorphization obtained after milling for 30 h was confirmed by X-ray diffraction and transmission electron microscope. The morphology of powders prepared using different milling times was observed by field-emission scanning electron microscope. The powders developed a fine, layered, homogeneous structure with prolonged milling. The crystallization behavior showed that the glass transition, $T_g$, onset crystallization, $T_x$, and super cooled liquid range ${\Delta}T=T_x-T_g$ were 691,771 and 80 K, respectively. The isothermal transformation kinetics was analyzed by the John-Mehn-Avrami equation. The Avrami exponent was close to 2.5, which corresponds to the transformation process with a diffusion-controlled type at nearly constant nucleation rate. The activation energy of crystallization for the alloy in the isothermal annealing process calculated using an Arrhenius plot was 345 kJ/mol.

• 한국결정성장학회지
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• 제20권1호
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• pp.58-63
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• 2010

화력 발전소에서 발생하는 석탄 바닥재에 $Na_2O$와 $Li_2O$가 첨가된 결정화 유리를 제조하고, 비등온 열분석법을 이용하여 결정성장 거동을 분석하였다. 온도에 따른 결정화 분율 및 결정화 속도 변화를 계산한 결과, 결정화가 50% 진행된 온도는 DTA 상의 결정 발열피크 $T_p$ 보다 약간 높게 나타났으며, 결정화가 가장 빠르게 진행되는 온도는 $T_p$와 거의 일치함을 알 수 있었다. Kissinger 식을 이용하여 결정화 활성화 에너지(262 kJ/mol), Avrami 상수 (1.7) 그리고 진동수 ($5.7{\times}10^{16}/s$)를 계산하였으며, 이로부터 nepheline 결정 성장은 주로 1~2 차원적 표면 결정화 경향을 보이지만, 동시에 내부 결정화도 어느 정도 나타날 것으로 예측되었다. 실제 미세구조 관찰에서 수지(dendrite)상의 표면 결정화가 상당히 일어났고 동시에 낮은 분율의 내부 결정도 생성된 것이 확인되어, Kissinger식에 의해 예측된 결과가 본 연구에서 제조된 결정화 유리의 거동과 일치함을 알 수 있었다.

• 한국세라믹학회지
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• 제23권5호
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• pp.9-16
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• 1986

The effect of $TiO_2$ addition to the 90wt% Cordierite-10wt% Enstatite base glass was investi-gated to understand the crystallization behavior of the glass. Glasses with addition of $TiO_2$ less than 7, 5wt% had a tendency of surface crystallization and were cracked when heat treated and in this case the crystalline phase formed was indialite. glasses with addition of $TiO_2$ more than 10wt% to 15wt% were crystallized in bulk when heat treated and were suitable for glass-ceramics. The highest microhardness 1640kg/$mm^2$ was obtained when the glass of 12.5wt% $TiO_2$ addition was heat treated at 762$^{\circ}C$ for 60 minutes for nucleation and at 1135$^{\circ}C$ for 20 minutes for crystal growth and in general higher microhardness was obtained when crystalline phase of magnesium aluminum titanate and $\mu$-cordierite were developed. Avrami equation for crystal growth kinetics was applicable in glasses of less than 7.5 wt% $TiO_2$ addition and in case of glasses of more than 10wt% $TiO_2$ addition it was not applicable because of too fast crystal growth.

• Nuclear Engineering and Technology
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• 제53권8호
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• pp.2576-2581
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• 2021

The thermal stability and crystallization behaviors of La₂O₃ containing B₂O₃-CaO-Al₂O₃ glass waste forms were investigated to evaluate the stability of waste form during emergencies in deep geological disposal. For glasses containing 15% La₂O₃, LaBO₃ phases were observed as major crystals from 780 ℃ and exhibited needlelike structures. Al, Ca, and O were homogeneously distributed throughout the entire specimen, while some portions of B and La were concentrated in some parts. By differential thermal analysis at various heating rates, the activation energy for grain growth and the crystallization rate of LaBO₃ were calculated to be 12.6 kJ/mol and 199.5 kJ/mol, respectively. These values are comparable to other waste forms being developed for the same purpose.

• 정보저장시스템학회논문집
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• 제1권1호
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• pp.93-98
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• 2005

Rewritable optical disk is one of the essential data storage media in these days, which takes advantage of the different optical properties in the amorphous and crystalline states of phase change materials. As well known, data transfer rate is one of the most important parameter of the phase change optical disks, which is mostly limited by the crystallization speed of recording media. Therefore, we doped Sn/Bi to $Ge_2Sb_2Te_5$ alloy in order to improve the crystallization speed and investigated the dependence of phase change characteristics on Sn/Bi doping concentration. The Sn/Bi doped $Ge_2Sb_2Te_5$ thin film was deposited by RF magnetron co-sputtering system and phase change characteristics were investigated by X-ray diffraction (XRD), static tester, UV-visible spectrophotometer, electron probe microanalysis (EPMA), inductively coupled plasma mass spectrometer (ICP-MS) and atomic force microscopy (AFM). Optimum doping concentration of Bi and Sn were 5${\~}$6 at.$\%$ and the minimum time for crystallization was below than 20 ns. This improvement is correlated with the simple crystalline structure of Sn/Bi doped $Ge_2Sb_2Te_5$ and the reduced activation barrier arising from Sn/Bi doping. The results indicate that Sn/Bi might play an important role in the transformation kinetics of phase change materials..

• 폴리머
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• 제27권6호
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• pp.509-520
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• 2003

입체규칙성이 다른 폴리프로필렌 (PP)의 결정화 거동을 비교하였다. 결정화 조건은 신디오택틱 폴리프로필렌 (sPP)과 아이소택틱 폴리프로필렌 (iPP)의 단위 결정 격자, 라멜라 구조, 구정의 성장에 영향을 주었다. 냉각속도가 증가할수록 결정 구조의 안정성이 감소하였으며, 냉각속도에 따른 구조적 변화는 iPP 가 sPP보다 크게 나타났다. sPP는 1 $^{\circ}C$/min 이하의 속도로 서냉될 때 body centered cell H의 fully antichiral packing 구조를 형성하였고 sPP가 primitive cellII구조를 형성할 때, 결정 격자와 라멜라 구조는 열이력의 영향을 작게 받은 것으로 확인되었다. 최대 결정화 온도에서 결정화 속도는 iPP가 sPP보다 빠르게 나타났다.