• 한국전기전자재료학회논문지
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• 제17권7호
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• pp.713-717
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• 2004

In this study, the etched trench properties including cross-sectional profile, surface roughness, and crystalline defects were investigated depending on the various silicon etching and additive gases, For the case of HBr$He-O_2SiF_4$ trench etching gas mixtures, the excellent trench profile and minimum defects in the silicon trench were achieved. Due to the residual oxide film grown by the additive oxygen gas, which acts as a protective layer during trench etching, the undercut and defects generation in the trench were suppressed. To improve the electrical characteristics of trench gate, the hydrogen annealing process after trench etching was also adopted. Through the hydrogen annealing, the trench corners might be rounded by the silicon atomic migration at the trench corners having high potential. The rounded trench corner can afford to reduce the gate electric field and grow a uniform gate oxide. As a result, dielectric strength and TDDB characteristics of the hydrogen annealed trench gate oxide were remarkably increased compared to the non-hydrogen annealed one.

• 한국표면공학회지
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• 제18권3호
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• pp.105-115
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• 1985

Lead-tin-copper ternary alloy electrodeposition is conducted onto the inner bore surface of plain bearings as an overlay in order to investigate the effect of slot width, current density and fluoboric acid concentration on the uniformity of overlay. The thickness of overlay is analyzed by means of current distribution resulting from the overvoltage of plating bath and the apparent distance between cathode and anode. The result demonstrate that the uniformity of overlay is remarkably dependent of the slot size and current density, but has little bearing on the fluoboric acid concentration over 100g/L. This present study indicates that uniform overlay is obtainable within the tolerable thickness of ${\pm}2{\mu}m$ by using the slot width of 22mm. The surface morphology examination also shows the important role of concentration polarization of the micro-uniformity of overlay. The micro-uniformity has improved at the low concentration polarization which resulted from operating at the low current density and high fluoboric acid concentration. The surface morphology of deposits exhibits the vivid pyramid crystalline in the plating condition of low concentration polarizatio and all deposits have columnar structure parallel to the applied electric field regardless of the electroplating condition used.

• 한국자기학회지
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• 제22권1호
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• pp.15-18
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• 2012

Olivine 구조인 $LiFe_{0.9}Mn_{0.1}PO_4$ 분말 시료를 직접합성법(solid state method) 으로 제조하였으며, 결정학적 및 자기적 특성을 x-선 회절(x-ray diffractometer), 초전도 양자 간섭계(superconducting quantum interference devices) 및 뫼스바우어 분광(M$\ddot{o}$ssbauer spectroscopy) 실험을 이용하여 연구하였다. $LiFe_{0.9}Mn_{0.1}PO_4$ 시료의 결정구조는 공간그룹이 Pnma인 orthorhombic 구조임을 Rietveld 정련법으로 분석하였다. $LiFe_{0.9}Mn_{0.1}PO_4$ 시료의 닐온도 (N$\acute{e}$el temperature; $T_N$)는 50 K으로 나타내었고 닐온도에서 자기 상전이가 일어나는 것을 초전도 양자 간섭계 실험을 통하여 확인하였다. Fe(Mn)-O 이온간 거리를 분석하여 $FeO_6(MnO_6)$ 팔면체 구조가 비대칭임을 확인하였고 그 구조로 인하여 강한 결정장에 영향을 받으며, 닐온도 이상에서 자기 2중극자 상호작용은 사라지고, 강한 결정장에 의한 전기 4중극자 작용만이 존재하여 두 개의 흡수선이 나타나는 것을 뫼스바우어 분광 실험을 통하여 분석하였다.

• The Korean Journal of Ceramics
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• 제6권2호
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• pp.138-142
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• 2000

Thin film $LiNbO_3$MFS (metal-ferroelectric-semiconductor) capacitor showed improved characteristics such as low interface trap density, low interaction with Si substrate, and large remanent polarization. This paper reports ferroelectric $LiNbO_3$thin films grown directly on p-type Si (100) substrates by 13.56 MHz RF magnetron sputtering system for FRAM (ferroelectric random access memory) applications. RTA (rapid thermal anneal) treatment was performed for as-deposited films in an oxygen atmosphere at $600^{\circ}C$ for 60sec. We learned from X-ray diffraction that the RTA treated films were changed from amorphous to poly-crystalline $LiNbO_3$which exhibited (012), (015), (022), and (023) plane. Low temperature film growth and post RTA treatments improved the leakage current of $LiNbO_3$films while keeping other properties almost as same as high substrate temperature grown samples. The leakage current density of $LiNbO_3$films decreased from $10^{-5}$ to $10^{-7}$A/$\textrm{cm}^2$ after RTA treatment. Breakdown electric field of the films exhibited higher than 500 kV/cm. C-V curves showed the clockwise hysteresis which represents ferroelectric switching characteristics. Calculated dielectric constant of thin film $LiNbO_3$illustrated as high as 27.9. From ferroelectric measurement, the remanent polarization and coercive field were achieved as 1.37 $\muC/\textrm{cm}^2$ and 170 kV/cm, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.226-229
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• 2004

A stoichiometric mixture of evaporating materials for $CuAlSe_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CuAlSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $680^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuAlSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}\;cm^{-3}$ and $295\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuAlSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;2.8382\;eV\;-\;(8.68{\times}10^{-4}\;eV/K)T^2/(T+155K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $CuAlSe_2$ have been estimated to be 0.2026 eV and 0.2165 eV at 10K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $CuAlSe_2$. The three photocurrent peaks observed at 10K are ascribed to the $A_1-$, $B_1-$, and $C_1$-exciton peaks for n = 1.

• 공업화학
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• 제20권6호
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• pp.617-621
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• 2009

Zinc oxide (ZnO)을 금(Au)과 fluorine-doped tin oxide (FTO) 촉매로 산화실리콘($SiO_2$) 기판에 산화아연입자 20 nm, $20{\mu}m$를 각각 사용하여 기체-액체-고체(VLS) 합성법으로 성장시켰다. 나노로드의 표면특성, 화학조성, 그리고 결정특성을 엑스레이회절(X-ray diffraction (XRD)), 에너지 분산형 X선 분광기(Energy-dispersive X-ray spectroscopy (EDX)), 표면 방출주사현미경(Field-emission scanning electron microscope (FE-SEM))으로 분석하였다. ZnO의 입자 크기 뿐만 아니라 결정형태가 성장에 크게 영향을 미쳤다. ZnO의 모든 나노구조가 6방정계(六方晶系), 단일결정구조를 가지고 있었다. 최적온도는 $1030^{\circ}C$, 입자크기는 20 nm이다. 그러므로 Au 대신 플루오린 첨가 도핑으로 전기음성도가 증가된 FTO 증착에 의해서 생성된 나노로드는 경제성 있는 대체물질로서의 가치가 있을 것으로 사료된다.

• 센서학회지
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• 제16권6호
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• pp.419-427
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• 2007

Single crystal $ZnIn_{2}S_{4}$ layers were grown on a thoroughly etched semi-insulating GaAs(100) substrate at $450^{\circ}C$ with the hot wall epitaxy (HWE) system by evaporating the polycrystal source of $ZnIn_{2}S_{4}$ at $610^{\circ}C$ prepared from horizontal electric furnace. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $ZnIn_{2}S_{4}$ thin films measured with Hall effect by van der Pauw method are $8.51{\times}10^{17}\;electron/cm^{-3}$, $291{\;}cm^{2}/v-s$ at 293 K, respectively. The photocurrent and the absorption spectra of $ZnIn_{2}S_{4}$/SI(Semi-Insulated) GaAs(100) are measured ranging from 293 K to 10 K. The temperature dependence of the energy band gap of the $ZnIn_{2}S_{4}$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)$=2.9514 eV. ($7.24{\times}10^{-4}\;eV/K$)$T^{2}$/(T+489 K). Using the photocurrent spectra and the Hopfield quasicubic model, the crystal field energy(${\Delta}cr$) and the spin-orbit splitting energy(${\Delta}so$) for the valence band of the $ZnIn_{2}S_{4}$ have been estimated to be 167.8 meV and 14.8 meV at 10 K, respectively. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1}$-, $B_{1}$-, and $C_{41}$-exciton peaks.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.234-238
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• 2004

A stoichiometric mixture of evaporating materials for $CuInSe_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CuInSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuInSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $9.62{\times}10^{l6}\;cm^{-3}$ and $296\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuInSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;1.1851\;eV\;-\;(8.99{\times}10^{-4}\;eV/K)T^2/(T+153K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $CuInSe_2$ have been estimated to be 0.0087 eV and 0.2329 eV at 10K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}_{so}$ definitely exists in the $\Gamma_6$ states of the valence band of the $CuInSe_2$. The three photocurrent peaks observed at 10K are ascribed to the $A_1-$, $B_1-$, and $C_1$-exciton peaks for n = 1.

• 한국결정성장학회지
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• 제25권5호
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• pp.173-181
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• 2015

A stoichiometric mixture of evaporating materials for $BaIn_2S_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $BaIn_2S_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by double crystal X-ray diffraction (DCXD). The carrier density and mobility of $BaIn_2S_4$ single crystal thin films measured from Hall effect by van der Pauw method are $6.13{\times}10^{17}cm^{-3}$ and $222cm^2/v{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $BaIn_2S_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=3.0581eV-(3.9511{\times}10^{-3}eV/K)T^2/(T+536K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $BaIn_2S_4$ have been estimated to be 182.7 meV and 42.6 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $BaIn_2S_4/GaAs$ epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-exciton for n = 1 and $C_{24}$-exciton peaks for n = 24.

• Composites Research
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• 제29권4호
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• pp.145-150
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• 2016

Polyvinylidene fluoride (PVDF)는 압전성을 나타내는 대표적인 고분자로 1960년대부터 많은 연구가 진행되어 왔다. PVDF는 반결정의 고분자로써 5가지의 결정 구조(${\alpha}$, ${\beta}$, ${\gamma}$, ${\delta}$, 그리고 ${\varepsilon}$형)로 구성되어 있다. ${\alpha}$형과 ${\delta}$형 결정은 전기적으로 반응하지 않는 무극성 결정구조이나 ${\beta}$형, ${\gamma}$형 그리고 ${\varepsilon}$형은 전기적으로 반응하는 극성 결정구조이다. 그 중에서도 ${\beta}$형 결정구조는 트랜스 형 분자 쇄가 평행으로 충진 된 형태로서 PVDF 단위체가 갖는 영구 쌍극자가 모두 한 방향으로 배열되어 있는 구조이기 때문에 자발 분극이 커지게 되고 압전성을 나타내게 된다. 일반적으로 ${\beta}$형 결정구조는 연신을 통한 ${\alpha}$형 결정구조의 변환을 통하여 얻을 수 있고, 연신 후 후처리 공정을 통해 그 양을 증가시킬 수 있다. 습식방사로 제조된 PVDF 섬유는 응고욕에서 극성 용매의 확산 메커니즘에 의해 ${\beta}$형 결정구조가 형성되는 장점을 가지고 있지만 극성 용매가 빠져나감과 동시에 섬유 고화가 진행되기 때문에 용매의 확산 경로가 섬유 내부 기공으로 남게 되는 단점을 가지고 있다. 이 기공은 폴링(Poling) 공정에서 전기장에 의한 분극을 방해하여 그 효과를 감소시키는 역할을 한다. 또한, PVDF 섬유가 압전 특성을 필요로 하는 응용분야에 사용되기 위해서는 섬유 가공 후에 전극이 반드시 부착되어야 하는데 섬유 형태로 제조된 PVDF에 전극을 형성하기는 매우 어렵다. 본 연구에서는 압전성을 갖는 PVDF 섬유를 습식 방사와 건식 방사의 혼합 공정으로 제조하여 기공 문제를 해결하였고, 전극이 섬유 내부에 삽입된 Core/Shell 형태의 PVDF 섬유를 제조하여 까다로운 전극형성 문제를 해결하였다.