• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.165-169
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• 2001

Carbon nitride films were grown on Si (100) substrate by a laser-electric discharge method with and without a magnetic field assistance. The magnetic field leads to vapor plume plasma expending upon the ambient arc discharge plasma area. Influence of the magnetic field has resulted in increase of a crystallite size in the films due to bombardment (heating) of Si substrates by energetic carbon and nitrogen species generated during cyclotron motion of electrons in the discharge zone. Many crystalline grains were observed in the morphology of the deposited films by scanning electron microscopy. In order to determine the structural crystalline parameters, X-ray diffraction (XRD) was used to analysis the grown films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.2
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• pp.184-189
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• 2002

Carbon nitride films were grown on Si (100) substrate by a laser-electric discharge method with/without a magnetic field assistance. The magnetic field leads to vapor plume plasma expending upon the ambient arc discharge plasma area. Influence of the magnetic field has resulted in increased of a crystallite size int he films due to bombardment (heating) of Si substrates by energetic carbon and nitrogen species generated during cyclotron motion of electrons in the discharge zone. The surface morphology of the films with a deposition time of 2 hours was studied using a scanning electron microscopy (SEM). In order to determine the structural crystalline parameters, X-ray diffraction (XRD) was used to analysis the grown films.

• Journal of Magnetics
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• v.8 no.4
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• pp.153-156
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• 2003

The values of crystalline-electric-field parameters $A_{nm}$ for $RFe_{11}$Ti $H_{x}$ (R=Tb,Ho) (x=0,l) are obtained by fitting calculations to the magnetization curves along the crystal axes at 4.2 K and higher temperatures. The insertion of H element in RFe$_{11}$Ti significantly affects CEF parameters $A_{nm}$ . By using exchange field 2${\mu}$$_{B}$ $H_{ex}$ derived by inelastic neutron scattering and fitted $A_{nm}$ , the calculations reproduce the experimental curves well.

• 한국신재생에너지학회:학술대회논문집
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• 2005.06a
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• pp.94-97
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• 2005

For the fabrication of poly-crystalline silicon ingot, CCCC (Cold Crucible Continuous Casting) method under a high frequency alternating magnetic field, was utilized in order to prevent crucible consumption and ingot contamination and to increase production rate. In order to effectively and continuously melt and cast silicon, which has a high radiation heat loss due to the high melting temperature and a low induction heating efficiency due to a low electric conductivity, Joule and pinch effects were optimized. Throughout the present investigation, poly-crystalline Si ingot was successfully produced at the casting speed of above 1.5 mm/min under a non-contact condition.

• Transactions on Electrical and Electronic Materials
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• v.11 no.5
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• pp.230-233
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• 2010

The authors investigated the anodization mechanism of aluminum in an oxalic acid solution, and the electrochemical reaction is very unique for pore formation via the dissolution process, which is very dependent on the surface geometry in nanoporous alumina templates. The cross-sectional nanochannels showed that the geometrical curvature of the initial surface can cause the branching of nanochannels to be adjusted in volume occupancy to be direct to the electric field normal to the surface. The nanoporous alumina with the crystalline $\gamma-Al_2O_3$ phase showed hexagonal ordering at a voltage of 40 V, with a nanohole distance of 102 nm from the charge density oscillation of the oxalic acid solution.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.17 no.2
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• pp.142-152
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• 1992

This paper presentes a new method to measure high electric field (or high voltage) by using crystalline SiO2 which has very high half wave voltage. There are many difficulties in measuring high electric field using other crystals which have generally low half wave voltage.By applying Stokes parameter and Mueller matrix. We derive optical modulation equation in the sensor which is composed of a polarizer, and Mueller matrix, we derive optical modulation equation in the sensor which is composed of a polarizer, a Pokels material, and an analyzer, We theoretically analyzed electro-optic effect, and calculated the phase retardation and half wave volt age of the birefringent material. The designed optical valtage sensor has very excellent linearity up to 20KV without divided volt-age. The maximum error was measured within 3%. Before annealing of Sio2 crystal, the maximum variation of the output voltage is 7.5% with varying temperature from \ulcorner20˚c to 60˚c. But, after annealing of SiO2 crystal, the output voltage variation is improved within 1%error.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.7
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• pp.550-554
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• 2013

Carbon nanotubes (CNT) / polyvinylidene fluoride (PVDF) piezoelectric composite films for nanogenerator devices were fabricated by spray coating method. When the CNT/PVDF mixture solution passes through the spray nozzle with small diameter by the compressed nitrogen gas, electric charges are generated in the liquid by a triboelectric effect. Then randomly distributed ${\beta}$ phase PVDF film could be re-oriented by the electric field resulting from the accumulated electrical charges, and might be resulted in extremely one-directionally aligned ${\beta}$ phase PVDF film without additional electric field for poling. X-ray diffraction patterns were used to investigate crystal structure of the CNT/PVDF composite films. It was confirmed that they revealed extremely large portion of the ${\beta}$ phase PVDF crystalline in the film. Therefore we could obtain the poled CNT/PVDF piezoelectric composite films by the spray coating method without additional poling process.

• Journal of the Korean Vacuum Society
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• v.8 no.2
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• pp.93-101
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• 1999

The purposed of this paper is to investigate the electrical and thermal stability of Polyvinylidene fluoride(PVDF) organic thin films prepared by the vapor deposition method. The differential scanning calorimetry curve of the PVDF organic thin films prepared by increasing substrate temperature showed that the melting curve increased from $128^{\circ}C$ to $142^{\circ}C$. This result implied that the PVDF organic thin film prepared by increasing substrate temperature increased intermolecular force in the crystalline region. The anomalous properties in dielectric constant and dielectric loss at low frequency and high temperature were described for PVDF organic thin film containing impurity carriers. It was confirmed that in view of electric conductive characteristics the ohm's law is satisfied in the range of lower electric field and ln J was proportional to the electric field ln E as like the conventional property of ionic conduction in the range of higher electric field. It was confirmed that major carrier of conductivity was ions. The electrical stability was improved according to an increase of the substrate temperature. On the basis of this experimental result, it could be observed that the optimum temperature of substrate for the electrical and thermal stability was at $105^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.256-256
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• 2013

Carbon nanotubes (CNT) / polyvinylidene fluoride (PVDF) piezoelectric composite films for nanogenerator devices were fabricated by spray coating method. When the CNT/PVDF mixture solution passes through the spray nozzle with small diameter by the compressed nitrogen gas, electric charges are generated in the liquid by a triboelectric effect. Then randomly distributed ${\beta}$ phase PVDF film could be re-oriented by the electric field resulting from the accumulated electrical charges, and might be resulted in extremely one-directionally aligned ${\beta}$ phase PVDF film without additional electric field for poling. X-ray diffraction patterns were used to investigate crystal structure of the CNT/PVDF composite films. It was confirmed that they revealed extremely large portion of the ${\beta}$ phase PVDF crystalline in the film. Therefore we could obtain the poled CNT/PVDF piezoelectric composite films by the spray coating method without additional poling process. Charge accumulation and resulting electric field generation mechanism by spray coating method were shown in Fig. 1. The capacitance of the CNT/PVDF films increased by adding CNTs into the PVDF matrix, and finally saturated. However, the I-V curves didn't show any saturation effect in the CNT concentration range of 0~4 wt%. Therefore we can control the performance of the devices fabricated from the CNT/PVDF composite film by adjusting the current level resulted from the CNT concentration with the uniform capacitance value.

• Journal of the Korean Magnetics Society
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• v.5 no.5
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• pp.679-682
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• 1995

The observed high-field magnetization curves of $Sm_{2}Fe_{17}N_{3.0}$ at 4.2 K and 296 K are well reproduced by the calculation using the Sm-Fe exchange field $2\mu\textrm{B}H_{ex}\;=\;320\;K$ and two crystalline electric field parameters ${A_{0}}^{2}=\;-910\;K$ and ${A_{1}}^{0}=\;200\;K$. The calculation shows that during the magnetization process along the hard axis at 4.2 K, the Sm moment rotates toward the direction antiparallel to H when H < 110 kOe and then returns to the field direction with further increase of the field. At 296 K, the Sm moment rotates toward the direction antiparallel to H monotonously with increasing field and finally becomes antiparallel to H when $H{\geq}H_{A}=210\;kOe$. The particular magnetization process of the Sm moment can be explained by the field-induced noncollinear coupling between the spin and orbital moments of the Sm ion.