• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.90.2-90.2
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• 2010

The crystalline silicon solar cells have been optical losses. but it can be reduced using light trapping by texture structure and anti-reflection coating. The high reflective index of crystalline silicon at solar wavelengths(400nm~1000nm) creates large reflection losses that must be compensated for by applying anti-reflection coating. In this study, the use of porous silicon(PSi) as an active material in a solar cell to take advantage of light trapping and blue-harvesting photoluminescence effect. Porous silicon is form by anodization and can be obtained in an electrolyte with hydrofluoric. We expect our research can results approaching to lower than 10% of several reflectance by porous silicon solar cells.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2007.05a
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• pp.282-284
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• 2007

The hardening and the constitutive equation based on the crystal plasticity are introduced for the numerical simulation of hemispherical sheet metal forming. For calculating the deformation and the stress of the crystal, Taylor's model of the crystalline aggregate is employed. The hardening is evaluated by using the Taylor factor, the critical resolved shear stress of the slip system, and the sum of the crystallographic shears. During the hemispherical forming process, the texture of the sheet metal is evolved by the plastic deformation of the crystal. By observing the texture evolution of the BCC sheet, the texture evolution of the sheet is traced during the forming process. Deformation texture of the BCC sheet is represented by using the pole figure. The comparison of the strain distribution and punch force in the hemispherical forming process between crystal plasticity and experiment shows the verification of the crystal-based formulation and the accuracy of the hardening and constitutive equation obtained from the crystal plasticity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.243-243
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• 2010

This paper two different etching, HF : HNO3 :DI and RIE were used for etching in multi-crystalline Silicon(Mc-Si) solar cell fabrication. The wafers etched in RIE texture showed low reflectance compared to the wafers etched in Acid soultion after SiNx deposition. In light current-voltage results, the cells etched in RIE texture exhibited higher short circuit current and open circuit voltage than those of the cells etched in acid solution. We have obtained 15.1% conversion efficiency in large area($156cm^2$) Multi-Si solar cells etched in RIE texture.

• Journal of Surface Science and Engineering
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• v.17 no.2
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• pp.41-58
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• 1984

Zinc was electrodeposited from cyanide solutions at temperature from 20$^{\circ}C\;to\;40^{\circ}C$ in the range of current density from 0.5 to 8A/$dm^2$. The preferred orientation changed from (10.3)+(11.0) to (11.0) texture with increasing cathode overpotential in the additive free solution, while the (11.0) preferred orientation developed at lower overpotentials (800-1270 mV) and the (11.0)+(10.0) preferred orientation was formed at higher overpotential (1300-1400mV) in the solution with brightner. Mossy type of morphology developed mostly in the additive free deposits and the microstructure of the cross section of the above deposits changed from columar structure to granular structure with increasing overpotential. The surface appearance of the deposits with additive having (11.0) texture was the smooth deposit of very small crystallite, while that of the deposits having (11.0)+(10.0) texture was fine crystalline deposit. The microstructure of the cross section of them was the fine field oriented type of structure.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.4
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• pp.343-350
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• 1995

A Abstract Systematic studies of the effects of crystalline forms of starting powders and p processing variables on the texture of hot - pressed silicon carbide are described. The results I indicate that hot - pressing of $\beta$ - SiC can produce strong textures and composite type duplex microstructure due to the ${\beta} {\rightarrow} {\alpha}$ phase transformation of SiC. The texture variations d during post - annealing have been observed. In the case of using a - SiC as starting pow¬d ders, the degree of preferred orientation by hot - pressing is relatively weak.

• Transactions of Materials Processing
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• v.23 no.4
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• pp.231-237
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• 2014

In the current study, a rate-dependent crystal plasticity finite element method (CPFEM) was used to simulate flow stress behavior and texture evolution of a body-centered cubic (BCC) crystalline material during plastic deformation at room temperature. To account for crystallographic slip and rotation, a rate-dependent crystal constitutive law with a hardening model was incorporated into an in-house finite element program, CAMPform3D. Microstructural heterogeneity and anisotropy were handled by assigning a crystallographic orientation to each integration point of the element and determining the stiffness matrix of the individual crystal. Uniaxial tensile tests of single crystals with different crystallographic orientations were simulated to determine the material parameters in the hardening model. The texture evolution during four different deformation modes - uniaxial tension, uniaxial compression, channel die compression, and simple shear deformation - was investigated based on the comparison with experimental data available in the literature.

• 한국태양에너지학회:학술대회논문집
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• 2009.11a
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• pp.383-387
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• 2009

Multi-crystalline silicon surface etching without grain-boundary delineation is a challenging task for the fabrication of high efficiency solar cell. The use of sodium hydroxide - sodium hypochlorite (NaOH40% + NaOCl 12%) solution for texturing multi-crystalline silicon wafer surface in solar cell fabrication line is reported in this article. in light current-voltage results, the cells etched in NaOH 40% + NaOCl 12% = 1:2 exhibited higher short circuit current and open circuit voltage than those of the cells etched in NaOH 40% + NaOCl 12% = 1:1 solution. we have obtained 15.19% conversion efficiency in large area(156cm2) multi-Si solar cells etched in NaOH 40% + NaOCl 12% = 1:1 solution.

• Journal of Magnetics
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• v.21 no.1
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• pp.35-39
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• 2016

$Cr_{100-x}Ti_x$ amorphous texture-inducing layers (TIL) were investigated to realize highly (002) oriented $L1_0$ FePt-C granular films through hetero-epitaxial growth on the (002) textured bcc-$Cr_{80}Mn_{20}$ seed layer (bcc-SL). As-deposited TILs showed the amorphous phase in Ti content of $30{\leq}x(at%){\leq}75$. Particularly, films with $40{\leq}x{\leq}60$ kept the amorphous phase against the heat treatment over $600^{\circ}C$. It was found that preference of the crystallographic texture for bcc-SLs is directly affected by the structural phase of TILs. (002) crystallographic texture was realized in bcc-SLs deposited on the amorphous TILs ($40{\leq}x{\leq}70$), whereas (110) texture was formed in bcc-SLs overlying on crystalline TILs (x < 30 and x > 70). Correlation between the angular distribution of (002) crystal orientation of bcc-SL evaluated by full width at half maximum of (002) diffraction (FWHM) and a grain diameter of bcc-SL indicated that while the development of the lateral growth for bcc-SL grain reduces FWHM, crystallization of amorphous TILs hinders FWHM. $L1_0$ FePt-C granular films were fabricated under the substrate heating process over $600^{\circ}C$ with having different FWHM of bcc-SL. Hysteresis loops showed that squareness ($M_r/M_s$) of the films increased from 0.87 to 0.95 when FWHM of bcc-SL decreased from $13.7^{\circ}$ to $3.8^{\circ}$. It is suggested that the reduction of (002) FWHM affects to the overlying MgO film as well as FePt-C granular film by means of the hetero-epitaxial growth.

• Journal of Sensor Science and Technology
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• v.5 no.1
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• pp.71-77
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• 1996

Considering that polycrystalline silicon, a structural material of the micromachining, is affected by a sacrificial oxide layer, the poly-oxide obtained by the thermal oxidation of polycrystalline silicon is newly proposed and estimated as the sacrificial oxide layer. The grain size of the polycrystalline silicon grown on the poly-oxide is larger than that of poly crystalline silicon grown on the conventional sacrificial oxide layer. As a result of XRD, increase of (111) textures and formation of additional (220) textures are observed on the polycrystaIline silicon deposited on the poly-oxide. Also, the polycrystalline silicon grown on the poly-oxide represents small and uniform stress.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.7
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• pp.760-765
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• 1992

The material properties and the TFT characteristics fabricated on SiOS12T substrate by LPCVD using SiHS14T gas were investigated. The deposition rate showed Arrhenius behavior with an activation energy of 31Kcal/mol. And the transition temperature form amorphous to crystalline deposition was observed at 570$^{\circ}C$-580$^{\circ}C$. The strong(220) texture was observed as the deposition temperature increases. XRD analysis showed that the film texture of the as-deposited polycrystalline silicon does not change after annealing at 850$^{\circ}C$. The fabricated TFT's based on the as-deposited amorphous film showed superior electrical characteristics to those of the as-deposited polycrystalline films. It is considered that the different electrical characteristics result from the difference of flat band voltage(VS1FBT) due to the interface trap density between the gate oxide and the active channel.