• Proceedings of the KAIS Fall Conference
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• 2009.12a
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• pp.633-635
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• 2009

It is a quite quality concerning to control temperature of single crystalline growth as it does when you get most of heat treating products. It is also important factor to control temperature when you make the $Al_2O_3$(single crystalline) used to artificial jewels, glass of watches, heat resistant transparent glasses. Thus, it is a major interest to get the proper temperature in accordance with the time process while you are making mixture of oxygen and hydrogen to have the right temperature. In this paper, we will study of electrical valve positioning system for the gas mixture to improve the quality of products.

• Proceedings of the KAIS Fall Conference
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• 2010.11a
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• pp.337-340
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• 2010

It is a quite quality concerning to control temperature of single crystalline growth as it does when you get most of heat treating products. It is also important factor to control temperature when you make the Al2O3(single crystalline) used to artificial jewels, glass of watches, heat resistant transparent glasses. Thus, it is a major interest to get the proper temperature in accordance with the time process while you are making mixture of oxygen and hydrogen to have the right temperature. In this paper, we will study of electrical valve positioning system for the gas mixture to improve the quality of products.

• Proceedings of the KIEE Conference
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• 2000.07d
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• pp.2793-2795
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• 2000

It is a quite quality concerning to control temperature of single crystalline growth as it does when you get most of heat treating products. It is also important factor to control temperature when you make the Al2O3(single crystalline) used to artificial jewels, glass of watches. heat resistant transparent glasses, Thus. it is a major interest to get the proper temperature in accordance with the time process while you are making mixture of oxygen and hydrogen to have the right temperature. In this paper, we will study of electrical valve positioning system for the gas mixture to improve the quality of products.

• Proceedings of the KIEE Conference
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• 2001.07d
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• pp.2431-2433
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• 2001

Robust control for DC motor is needed according to the highest precision of industrial automation. It is a quite quality concerning to control temperature of single crystalline growth as it does when you get most of heat treating products. It is also important factor to control temperature when you make the A12O3(single crystalline) used to artificial jewels, glass of watches, heat resistant transparent glasses. Thus, it is a major interest to get the proper temperature in accordance with the time process while you are making mixture of oxygen and hydrogen to have the right temperature. In this paper, we will study of electrical valve positioning system for the gas mixture to improve the quality of products.

• Proceedings of the KAIS Fall Conference
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• 2001.05a
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• pp.265-268
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• 2001

Robust control for DC motor is needed according to the highest precision of industrial automation. It is a quite quality concerning to control temperature of single crystalline growth as it does when you get most of heat treating products. It is also Important factor to control temperature when you make the A1203(sing1e crystalline) used to artificial Jewels, glass of watches, heat resistant transparent glasses. Thus, it is a major interest to get the proper temperature in accordance with the time process while you are making mixture of oxygen and hydrogen to have the right temperature. In this paper, we will study of electrical valve positioning system f3r the gas mixture to improve the quality of products.

• Proceedings of the KAIS Fall Conference
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• 2000.10a
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• pp.181-184
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• 2000

It is a quite quality concerning to control temperature of single crystalline it does when you get most of heat treating Products. It is also important control temperature when you make the A1203(single crystalline) used to jewels, 91ass of watches. heat resistant transparent 91asses. Thus, it is a md to get the proper temperature in accordance with the time process while making mixture of oxygen and hydrogen to have the right temperature. In we will study of electrical valve positioning system for the gas mixture to im quality of Products.

• Proceedings of the KAIS Fall Conference
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• 2004.06a
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• pp.213-216
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• 2004

It is a quite quality concerning to control temperature of single crystalline growth as it does when you get most of heat treating products. It is also important factor to control temperature when you make the $A1_2O_3$(single crystalline) used to artificial jewels, glass of watches, heat resistant transparent glasses. Thus, it is a major interest to get the proper temperature in accordance with the time process while you are making mixture of oxygen and hydrogen to have the right temperature. In this paper, we will study of electrical valve positioning system for the gas mixture to improve the quality of products.

• Journal of the Korean Magnetic Resonance Society
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• v.17 no.2
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• pp.92-97
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• 2013

We study the electron spin resonance line-width (ESRLW) of $Fe^{3+}$ in crystalline $LiNbO_3$ ; the ESRLW is obtained using the projection operator method (POM) developed by Argyres and Sigel. The ESRLW is calculated to be axially symmetric about the c-axis and is analyzed by the spin Hamiltonian with an isotopic g factor at a frequency of 9.5 GHz. The ESRLW increases exponentially as the temperature increases, and the ESRLW is almost constant in the high-temperature region (T>8000 K). This kind of temperature dependence of the ESRLW indicates a motional narrowing of the spectrum when $Fe^{3+}$ ions substitute the $Nb^{5+}$ ions in an off-center position. It is clear from this feature that there are two different regions in the graph of the temperature dependence of the ESRLW.

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.172-175
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• 2009

n-type crystalline silicon wafers were passivated with intrinsic a-Si:H thin films on both sides using HWCVD. Minority carrier lifetime measurement was used to verify interface passivation properties between a-Si:H thin film and crystalline Si wafer. Thin film interface characteristics were investigated depending on $H_2/SiH_4$ ratio and hot wire deposition temperature. Vacuum annealing were processed after deposition a-Si:H thin films on both sides to investigate thermal effects from post process steps. We noticed the effect of interface passivation properties according to $H_2/SiH_4$ ratio and hot wire deposition temperature, and we had maximum point of minority carrier lifetime at H2/SiH4 10 ratio and $1600^{\circ}C$ wire temperature.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.424.1-424.1
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• 2014

Vanadium dioxide (VO2) is a strongly correlated oxide exhibiting a first-order metal-insulator transition (MIT) that is accompanied by a structural phase transition from a low temperature monoclinic phase to a high-temperature rutile phase. VO2 has attracted significant attention because of a variety of possible applications based on its ultrafast MIT. Interestingly, the transition nature of VO2 is significantly affected by stress due to doping and/or interaction with a substrate and/or surface tension as well as defects. Accordingly, there have been considerable efforts to understand the influences of such factors on the phase transition and the fundamental mechanisms behind the MIT behavior. Here, we present the influences of oxygen deficiency, hydrogen doping, and substrate-induced stress on MIT phenomena in single-crystalline VO2 nanobeams. Specifically, the work function and the electrical resistance of the VO2 nanobeams change with the compositional variation due to the oxygen-deficiency-related defects. In addition, the VO2 nanobeams during exposure to hydrogen gas exhibit the reduction of transition temperature and the complex phase inhomogenieties arising from both substrate-induced stress and the formation of the hydrogen doping-induced metallic rutile phase.