• Journal of the Society of Cosmetic Scientists of Korea
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• v.24 no.3
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• pp.111-115
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• 1998

We investigated the stability of all-trans-retinol on the liquid crystalline O/W emulsion composed of mainly alkyl polyglycerine, alkyl polyglucose and glycerine, and compared the activity of all-trans-retinol in the various forms of liquid crystal. Under certain conditions, novel liquid crystalline gel was formed around oil droplets, and layers of this liquid crystalline gel were very wide and rigid. (SWLC; Super Wide Liquid Crystal) SWLC was very helpful to stabilize retinol in O/W emulsion. After storage at 45 C for 4 weeks, all-trans-retinol in O/W emulsion composed of SWLC retained above 85% of the activity upon HPLC analysis, whereas those within no liquid crystalline emulsion gave 47% and normal liquid crystalline emulsion composed of fatty alcohols gave 40 60%. Retinol in oil phase is nealy insoluble in pure water, but in cosmetic emulsion systems can be slightly solubilized into water because emulsifiers and polyols in emulsion systems function as solubilizers. In this case, water in outer phase acts as a media for oxygen transporation$.$and thus destabilizes retinol. As a result, retinol in O/W emulsion has a tendency to become unstable. SWLC surrounding oil droplet which contains retinol is wide and rigid, therefore reduces contact between inner phase and outer phase To make SWLC, properties of emulsifiers are very important phase transition temperature should be high, and the structure of surfactants should be bulky, and their ratio should be suitable to make rigid and wide liquid crystalline gel layer in order to reduce contact between retinol in inner phase and water in outer phase.

• Journal of Sensor Science and Technology
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• v.17 no.6
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• pp.437-446
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• 2008

Single crystalline ${ZnIn_2}{Se_4}$ layers were grown on thoroughly etched semi-insulating GaAs (100) substrate at $400^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating ${ZnIn_2}{Se_4}$ source at $630^{\circ}C$. The crystalline structure of the single crystalline thick films was investigated by the photoluminescence (PL) and Double crystalline X-ray rocking curve (DCRC). The carrier density and mobility of ${ZnIn_2}{Se_4}$ single crystalline thick films measured from Hall effect by van der Pauw method are $9.41{\times}10^{16}cm^{-3}$ and $292cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the ${ZnIn_2}{Se_4}$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)$=1.8622 eV-$(5.23{\times}10^{-4}eV/K)T^2$/(T+775.5 K). After the as-grown ${ZnIn_2}{Se_4}$ single crystalline thick films was annealed in Zn-, Se-, and In-atmospheres, the origin of point defects of ${ZnIn_2}{Se_4}$ single crystalline thick films has been investigated by the photoluminescence (PL) at 10 K. The native defects of $V_{Zn}$, $V_{Se}$, $Zn_{int}$, and $Se_{int}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Se-atmosphere converted ${ZnIn_2}{Se_4}$ single crystalline thick films to an optical p-type. Also, we confirmed that In in ${ZnIn_2}{Se_4}$/GaAs did not form the native defects because In in ${ZnIn_2}{Se_4}$ single crystalline thick films existed in the form of stable bonds.

• 보존과학연구
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• s.26
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• pp.77-101
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• 2005

In ancient times, many kinds of difference inorganic and organic pigment were used as colorants for making objects. This study has proved the damage regions on the aging conditions of the silk dyeing traditional pigment. so whiteness, tensile strength and digital-microscope were measured to examine the state of silk dyeing traditional pigments pretreated under each aging condition. From the result examining the state, all the silk dyeing traditional pigments were best condition at low temperature(-20/RT)and normal condition and damaged at high temperature($60^{\circ}C$) and 2ppm $SO_2$condition and UV condition. As a result of X-ray diffraction analysis of crystalline structure for the silk dyeing traditional pigments, most of specimens have nearly changed crystalline structure despite specimens had each other different conditions and times. Especially, specimens which was passing of 4-8 months have not changed in its crystalline structure. But some specimens like a Unghwang and Seokcheong have a little changed in its intensity in the XRD peak. Consequently, If we want to find out alteration of crystalline structure for the silk dyeing traditional pigments using scientific method according to change of environmental conditions, we must guarantee of equal state and strengthen of environmental conditions in specimen. Additionally, the term of experiment need to belong, and specimens which was experimented and analyzed must be same.

• The Korean Journal of Ceramics
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• v.1 no.4
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• pp.179-184
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• 1995

Sodium superionic conductor (NASICON) compounds were prepared. The effects of sintering temperature and cooling rate on the formation and the distribution of crystalline NASICON and $ZrO_3$ second phase were investigated. In the von Alpen-type composition, the $ZrO_2$ second phase is in thermal equilibrium with the crystalline NASICON above $1320^{\circ}C$, but when cooled through 1260-$1320^{\circ}C$ crystalline NASICON was formed by reaction between $ZrO_2$ and liquid phase. Very slow cooling ($1^{\circ}C$/hr) to $1260^{\circ}C$ from sintering temperature decreased the amount of sodium which prevents the formation of the crystalline NASICON resulted high number of $ZrO_2$ grains near the surface of some sintered bodies. Maximum electrical conductivity of 0.200 ohm-1cm-1 was obtained at $300^{\circ}C$ for well-sintered samples with little $ZrO_3$. On the other hand, low conductivities were obtained for rapid-cooled samples which have less dense microstructure.

• Proceedings of the KIEE Conference
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• 1996.11a
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• pp.193-195
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• 1996

Low-density polyethylene(LDPE ; thickness 100[${\mu}m$] as a experimental specimen is irradiated with electron beam by using electron beam accelerator, and as an experimental specimen, the nonirradiated specimen and the specimen irradiated with electron beam is produced according to the classification of dose. From the analysis of DSC, the crystalline melting point of the specimen irradiated with electron beam is lower than that of virgin specimen. It is confirmed thai the volume resistivity is increased from the temperature over $50[^{\circ}C]{\sim}60[^{\circ}C]$ to the crystalline melting point because of the defects of solid structure and the formation of many trap centers by means of electron beam irradiation, but decreased in the temperature over the crystalline melting point because of the melt of crystalline.

• Journal of Sensor Science and Technology
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• v.14 no.2
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• pp.131-135
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• 2005

This paper describes the ohmic contact formation of single crystalline 3C-SiC thin films heteroepitaxially grown on Si(001) wafers. In this work, a TiW (Titanium-tungsten) film as a contact matieral was deposited by RF magnetron sputter and annealed with the vacuum and RTA (rapid thermal anneal) process respectively. Contact resistivities between the TiW film and the n-type 3C-SiC substrate were measured by the C-TLM (circular transmission line model) method. The contact phases and interface the TiW/3C-SiC were evaulated with XRD (X-ray diffraction), SEM (scanning electron microscope) and AES (Auger electron spectroscopy) depth-profiles, respectively. The TiW film annealed at $1000^{\circ}C$ for 45 sec with the RTA play am important role in formation of ohmic contact with the 3C-SiC substrate and the contact resistance is less than $4.62{\times}10^{-4}{\Omega}{\cdot}cm^{2}$. Moreover, the inter-diffusion at TiW/3C-SiC interface was not generated during before and after annealing, and kept stable state. Therefore, the ohmic contact formation technology of single crystalline 3C-SiC using the TiW film is very suitable for high temperature MEMS applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.68-69
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• 2007

To make cost-effective solar cells, We have to use low cost material or make short process time or high temperature process. In solar cells, formation of emitter is basic and important technique according to build-up P-N junction. Diffusion process using spin-on dopants has all of this advantage. In this paper, We investigated n+ emitter formation spin-on dopants to apply crystalline silicon solar cells. We known variation of sheet resistance according to variation of temperature and single-crystalline and multi-crystalline silicon wafer using Honeywell P-8545 phosphorus spin-on dopants. We obtain uniformity of sheet resistance within 3~5% changing RPM of spin coater.

• Journal of the Society of Cosmetic Scientists of Korea
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• v.45 no.1
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• pp.1-7
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• 2019

We introduce to prepare liquid crystalline emulsion composed of cetearyl alcohol, cetyl palmitate, sorbitan palmitate, sorbitan olivate, ceramide and so on which can enforce interface between oil-based particle and water phase. In terms of structural analysis, the stability of the liquid crystalline emulsion including ceramide, which is immisible ingredient, at high temperature was proved by polarized microscope, cryo-SEM, small-angle x-ray scattering, in addition to viscometer and static light scattering by physical analysis.

• Journal of the Korean Magnetics Society
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• v.15 no.1
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• pp.25-29
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• 2005

Magnetic properties of YIG films grown by solid phase epitaxy (SPE) was measured as a function of temperature with focus on magneto-crystalline and perpendicular magnetic anisotropy. Perpendicular magnetic anisotropy was not induced in the SPE YIG films annealed at low temperature by relaxing residual stress through formation of dislocation. On the contrary the films annealed at high temperature showed perpendicular magnetic anisotropy which shows very low density of dislocation. Perpendicular magnetic anisotropy field decreased linearly up to a high temperature of $230^{\circ}C$ above which magneto-crystalline anisotropy disappeared. Coercivity also decreased linearly with temperature up 세 $230^{\circ}C$. Magneto-crystalline anisotropy of perpendicular anisotropy induced epitaxial (111) YIG films can be measured using $H_k=4K_1/3M_s$. Temperature behavior of initial susceptibility can be successfully explained by Hopkinson effects. Curie temperature of YIG films grown on GGG substrate with high paramagnetic susceptibility can be easily measured using the results.

• The Journal of Engineering Research
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• v.2 no.1
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• pp.151-164
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• 1997

We tried to improve the coating capability of the coating material using an additive(hexagonal crystalline graphite) of 2%, 3%, 4% and 6% under various pouring temperature for the easy isolation of sand and coating material from the final product. As a result in case of using a 2% and 3% additive to the Korean coating material generally no burning state has been occurred under the low pouring temperature, but it has been gradually increased with the pouring temperature, while in case of using a 2% and 3% additive to the Japanese coating material we could observe a strong burning state throughout the whole pouring temperature. On the other hand in case of using a 4% and 6% additive there has been no burning state through out the whole pouring temperature. From this result we could see that the best state of the final product without sand and coating material could generally be obtained if 4% and/or 6% of the crystalline graphite and the pouring temperature of $1400^{\circ}C$$\pm$$5^{\circ}C$ would be used.