• Korean Journal of Materials Research
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• v.29 no.11
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• pp.727-733
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• 2019

In this study, the glass melting properties are evaluated to examine the possibility of using refused coal ore as replacement for ceramic materials. To fabricate the glass, refused coal ore with calcium carbonate and sodium carbonate in it (which are added as supplementary materials) is put into an alumina crucible, melted at $1,200{\sim}1,500^{\circ}C$ for 1 hr, and then annealed at $600^{\circ}C$ for 2 hrs. We fabricate a black colored glass. The properties of the glass are measured by XRD (X-ray diffractometry) and TG-DTA (thermogravimetry-differential thermal analysis). Glass samples manufactured at more than $1,300^{\circ}C$ with more than 60 % of refused coal ore are found by XRD to be non-crystalline in nature. In the case of the glass sample with 40 % of refused coal ore, from the sample melted at $1,200^{\circ}C$, a sodium aluminum phosphate peak, a disodium calcium silicate peak, and an unknown peak are observed. On the other hand, in the sample melted at $1,300^{\circ}C$, only the sodium aluminum phosphate peak and unknown peak are observed. And, peak changes that affect crystallization of the glass according to melting temperature are found. Therefore, it is concluded that glass with refused coal ore has good melting conditions at more than $1,200^{\circ}C$ and so can be applied to the construction field for materials such as glass tile, foamed glass panels, etc.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.31 no.1
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• pp.24-31
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• 2021

We report structural, mechanical, and thermal properties of diecast ADC12 aluminum alloys characterized using synchrotron X-ray diffraction (XRD), scanning electron microscopy, energy dispersive X-ray (EDX) analysis, thermal conductivity (λ), Vickers hardness (Hv), and stress-strain measurements. We also studied the effect of post-annealing performed in a vacuum atmosphere on the mechanical properties of diecast ADC12 alloys. EDX and XRD results revealed that Al2Cu and AlCu3 grains are formed, well dispersed in Al base and highly crystalline. Ultimate tensile strength (UTS) of 307.9 ± 9.1 MPa and elongation of 2.98 ± 0.62 % were estimated. λ was 129.3 ± 0.27 W/m·K and Hv was approximately 130. Both values were significantly higher than the reported values. At annealing temperatures ranging from 25 to 200℃, UTS and Hv values remained constant, while as the annealing temperature increased to 500℃, these values gradually decreased. This is because stabilization of the microstructure improves toughness and ductility.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.31 no.4
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• pp.149-153
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• 2021

ε-Ga₂O₃ thin films were grown on 4H-SiC substrates by metal organic chemical vapor deposition (MOCVD) and crystalline quality were evaluated depend on growth conditions. It was found that the best conditions of the ε-Ga₂O₃ were grown at a growth temperature of 665℃ and an oxygen flow rate of 200 sccm. Two-dimensional growth was completed after the merge of hexagonal nuclei, and the arrangement direction of hexagonal nuclei was closely related to the crystal direction of the substrate. However, it was confirmed that crystal structure of the ε-Ga₂O₃ had an orthorhombic rather than hexagonal. Crystal phase transformation was performed by thermal treatment. And a β-Ga₂O₃ thin film was grown directly on 4H-SiC for the comparison to the phase transformed β-Ga₂O₃ thin film. The phase transformed β-Ga₂O₃ film showed better crystal quality than directly grown one.

• Clean Technology
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• v.30 no.1
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• pp.28-36
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• 2024

As demand for electric vehicles increases, the market for lithium-ion batteries is also rapidly increasing. The battery life of lithium-ion batteries is limited, so waste lithium-ion batteries are inevitably generated. Accordingly, lithium was selectively preleached from waste lithium iron phosphate (LiFePO₄, hereafter referred to as the LFP) cathode material powder among lithium ion batteries, and iron phosphate (FePO₄) powder was recovered. The recovered iron phosphate powder was mixed with alkaline sodium carbonate (Na₂CO₃) powder and heat treated to confirm its crystalline phase. The heat treatment temperature was set as a variable, and then the leaching rate and powder characteristics of each ingredient were compared after water leaching using Di-water. In this study, lithium showed a leaching rate of approximately 100%, and in the case of powder heat-treated at 800 ℃, phosphorus was leached by approximately 99%, and the leaching residue was confirmed to be a single crystal phase of Fe₂O₃. Therefore, in this study, lithium, phosphorus, and iron components were individually separated and recovered from waste LFP powder.

• Nuclear Engineering and Technology
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• v.56 no.6
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• pp.2174-2181
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• 2024

In this work, Sr_0.5Zr₂(PO₄)₃-SmPO₄ dual-phase ceramics were prepared via in-situ synthesis process, which is a potential novel nuclear waste form for immobilizing the fission product ⁹⁰Sr and the trivalent actinide radionuclides in high-level waste (HLW). And the preparation technology, microstructure and chemical durability of Sr_0.5Zr₂(PO₄)₃-SmPO₄ dual-phase ceramics were systematically investigated. It was confirmed that the optimum microwave-sintering temperature (1050 ℃) and heat preservation time (1.5 h) is estimated by Archimedes method. Besides, the as-prepared samples that were consisted of strontium zirconium phosphate (SrZP) and monazite showed the remarkable densification, in which the two crystalline phases were intermixed well with each other. Meanwhile, the formation and evolution of microstructure was also consistent with the variational rule of Sr_0.5Zr₂(PO₄)₃/SmPO₄, indicating that there was not mutual reaction during the in-situ synthesis process. The PCT and MCC-1 experimental results demonstrated that the elemental normalized leaching rates of tested samples are all at a low level (LR_Sr ~10^-4 g·m^-2·d^-1, LR_Zr ~10^-8-10^-6 g·m^-2·d^-1, LR_Sm ~10^-7-10^-5 g·m^-2·d^-1 and LR_P ~10^-4 g·m^-2·d^-1). It is indicated that Sr_0.5Zr₂(PO₄)₃-SmPO₄ dual-phase ceramics possesses excellent chemical durability for HLW disposal.

• Journal of the Korean Magnetics Society
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• v.14 no.2
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• pp.76-82
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• 2004

Crystallographic and magnetic properties for Brownmillerite-type oxides $Ca_{1-x}$Sr$_{x}$FeO$_{2.5}$ (x = 0, 0.3, 0.5, 0.7, 1.0) were investigated using x-ray diffraction (XRD) and Mossbauer spectroscopy. Polycrystalline samples were prepared by conventional solid-state reaction method. Information on exact crystalline structures, lattice parameters, bond lengths and bond angles were obtained by refining their XRD profiles using a Rietveld method. The crystal structures were found to be all orthorhombic with space group Icmm (x = 0, 0.3) and Icmm (x = 0.5, 0.7, 1.0) The lattice parameters increased monotonically with increasing Sr concentration. Both the tetrahedral and the octahedral sites were considerably distorted and elongated along b-axis. While bond lengths and bond angles O-Fe-O tend to increase minutely with the increase of Sr content, bond angles Fe-O-Fe decreased accordingly. The Mossbauer spectra showed two sets of sharp sextets originating from ferric ions occupying the tetrahedral and the octahedral sites under the magnetic transition temperature T$_{N}$. Regardless of the compositions x, the electric quadrupole splittings were -0.3 mm/s and 0.4 mm/s for the octahedral and the tetrahedral site, respectively. Above T$_{N}$, the Mossbauer spectra showed the paramagnetic doublets whose electric quadrupole splittings were about 1.6 mm/s, irrespective of compositions x. T$_{N}$ was found to decrease monotonically with the increase of Sr concentration. Ratios of absorption area for the two sites were almost 1:1 up to as high as 0.95 T$_{N}$ for all x. The result of the Debye temperature indicated that the inter-atomic binding force for the Fe atoms in the tetrahedral site was stronger than that for the octahedral site.hedral site.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.3
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• pp.99-104
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• 2011

A stoichiometric mixture of evaporating materials for $MgGa_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. The crystal structure of these compounds has a rhombohedral structure with lattice constants $a_0=3.953\;{\AA}$, $c_0=38.890\;{\AA}$. To obtain the single crystal thin films, $MgGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the double crystal X-ray rocking curve and X-ray diffraction ${\omega}-2{\theta}$ scans. The carrier density and mobility of $MgGa_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method were $6.21{\times}10^{18}\;cm^{-3}$ and 248 $cm^2/v{\cdot}s$ at 293 K, respectively. The optical absorption of $MgGa_2Se_4$ single crystal thin films was investigated in the temperature range from 10 K to 293 K. The temperature dependence of the optical energy gap of the $MgGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's equation, $E_g(T)=E_g(0)-({\alpha}T^2/T+{\beta})$. The constants of Varshni's equation had the values of $E_g(0)=2.34\;eV$, ${\alpha}=8.81{\times}10^{-4}\;eV/K$ and ${\beta}=251\;K$, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.6
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• pp.425-433
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• 2000

The stochiometric mix of evaporating materials for the $CuGaTe_2$single crystal thin films was prepared from horizontal furnance. Using extrapolation method of X-ray diffraction patterns for the $CuGaTe_2$polycrystal, it was found tetragonal structure whose lattice constant $a_0 and c_0$ were 6.025 $\AA$ and 11.931 $\AA$, respectively. To obtain the single crystal thin films, $CuGaTe_2$mixed crystal was deposited on throughly etched semi-insulator GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $670^{\circ}C$ and $410^{\circ}C$ respectively, and the thickness of the single crystal thin films is 2.1$\mu\textrm{m}$. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). Hall effect on this sample was measured by the method of van der Pauw and studied on carrier density and mobility dependence on temperature. The carrier density and mobility of $CuGaTe_2$single crystal thin films deduced from Hall data are $8.72{\times}10{23}$개 $\textrm m^3$, $3.42{\times}10^{-2}$ $\textrm m^2$/V.s at 293K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $CuGaTe_2$single crystal thin film, we have found that the values of spin orbit coupling $\Delta$s.o and the crystal field splitting $\Delta$cr were 0.0791 eV and 0.2463 eV at 10 K, respectively. From the PL spectra at 10 K, the peaks corresponding to free bound excitons and D-A pair and a broad emission band due to SA is identified. The binding energy of the free excitons are determined to be 0.0470 eV and the dissipation energy of the donor-bound exciton and acceptor-bound exciton to be 0.0490 eV, 0.0558 eV, respectively.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.4
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• pp.19-24
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• 2020

In this work, the electrical property of Si-doped β-Ga2O3 was investigated via a post-growth annealing process. The Ga2O3 samples were annealed under air (O-rich) or N2 (O-deficient) ambient at 800~1,200℃ for 30 mins. There was no correlation between the crystalline quality and the electrical conductivity of the films within the experimental conditions explored in this work. However, it was observed the air ambient led to severe degradation of the film's electrical conductivity while N2-annealed samples exhibited improvement in both the carrier concentration and Hall mobility measured at room temperature. Interestingly, the x-ray photoemission spectroscopy (XPS) revealed that both annealing conditions resulted in higher concentration of oxygen vacancy (VO). Although it was a slight increase for the air-annealed sample, high resistivity of the film strongly suggests that VO cannot be a shallow donor in β-Ga2O3. Therefore, the enhancement of the electrical conductivity of N2-annealed samples must be originated from something other than VO. One possibility is the activation of Si. The XPS analysis of N2-annealed samples showed increasing relative peak area of Si 2p associated with SiOx with increasing annealing temperature from 800 to 1,200℃. However, it was unclear whether or not this SiOx was responsible for the improvement as the electrical conductivity quickly degraded above 1,000℃ even under N2 ambient. Furthermore, XPS suggested the concentration of Si actually increased near the surface as opposed to the shift of the binding energy of Si from its initial chemical state to SiOx state. This study illustrates the electrical changes induced by a post-growth thermal annealing process can be utilized to probe the chemical and electrical states of vacancies and dopants for better understanding of the electrical property of Si-doped β-Ga2O3.

• Korean Journal of Environmental Agriculture
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• v.29 no.1
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• pp.27-32
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• 2010

This study was conducted to reclassify Anryong series based on the second edition of Soil Taxonomy and to discuss the formation of Anryong series distributed on the mountain foot slope. Morphological properties of typifying pedon of Anryong series were investigated and physico-chemical properties were analyzed according to Soil survey laboratory methods manual. The typifying pedon of Anryong series has brown (7.5YR 4/4) loam Ap horizon (0-22 cm), strong brown (7.5YR 4/6) cobbly clay loam BAt horizon (22-35 cm), strong brown (7.5YR 4/6) cobbly clay loam Bt1 horizon (35-55 cm), reddish brown (5YR 5/4) cobbly clay loam Bt2 horizon (55-82 cm), and brown (7.5YR 5/4) cobbly clay loam Bt3 horizon (82-120 cm). The typifying pedon has an argillic horizon from a depth of 22 to 120 cm and a base saturation (sum of cations) of less than 35% at 125 cm below the upper boundary of the argillic horizon. It can be classified as Ultisol, not as Alfisol. It has udic soil moisture regime, and can be classified as Udult. Also that meets the requirements of Typic Hapludults. It has 18-35% clay at the particle-size control section, and have mesic soil temperature regime. Therefore Anryong series can be classified as fine loamy, mesic family of Typic Hapludults, not as fine loamy, mesic family of Ultic Hapludalfs. Anryong series occur on mountain foot slope positions in colluvial materials derived from acid and intermediate crystalline rocks. They are developed as Ultisols with clay mineral weathering, translocation of clays to accumulate in an argillic horizon, and leaching of base-forming cations from the profile for relatively long periods under humid and temperate climates in Korea.