• 펄프종이기술
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• 제47권2호
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• pp.61-69
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• 2015

A number of researches have been carried out regarding the utilization of nanocellulose(crystalline nanocellulose, microfibrillated cellulose, nanofibrillated cellulose) for the manufacture of various kinds of composites and functional products. However, only few research works on the manufacturing characteristics of nanocellulose could be found, although some companies started already the production of nanocellulose in commercial scale. However, the most important thing in commercializing of production and utilization of nanocellulose is to develop the economical and efficient process. Thus, this study was carried out in order to investigate the effects of refining, alkaline pre-treatment and grinder clearance on the characteristics of microfibrillated cellulose and energy consumption. There was no significant differences in crystalline index with the degree of microfibrillation. The initial fibrillation could be improved by refining pre-treatment, but its effect was not observed anymore since the fibrillation was done up to certain level by grinding. Refining pre-treatment did not improved the energy efficiency. Alkaline pre-treatment can be helpful because the swelling of pulp fiber will facilitate fibrillation. It was found that the decrease in grinder clearance was helpful to improve the energy efficiency.

• 한국세라믹학회지
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• 제32권11호
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• pp.1269-1275
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• 1995

Effects of GeO2 addition on the thermal and structural stabilities of PbO-Bi2O3-Ga2O3 glasses were studied. Thermal stabilities, as assessed by the weighted thermal stability factors [(Tx-Tg)/Tg], increased with GeO2 concentraton from 0.097 to 0.210 with the addition of 20 mol% GeO2. Increasing GeO2 content resulted in the decrease of apparent density, molar volume, refractive index and thermal expansion. On the other hand, IR transmission cut-off (λT=50%) moved from 6.73${\mu}{\textrm}{m}$ for the ternary PbO-Bi2O3-Ga2O3 glass to shorter wavelength side, 5.98${\mu}{\textrm}{m}$ for a glass containing 20mol% GeO2. There were little change with GeO2 content, however, in the activation energies for the viscous flow of approximately 140 kcal/mole within the temperature interval of 300~50$0^{\circ}C$. Addition of GeO2 to PbO-Bi2O3-Ga2O3 glasses enhanced the thermal and structural stabilities significantly at the expense of their infrared transmittance. An appropriate compsomise between these two opposite trends should be made following the specifications of the final applications.

• 한국태양에너지학회 논문집
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• 제33권2호
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• pp.11-17
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• 2013

Silicon nitride($SiN_x:H$) deposited by radio frequency plasma enhanced chemical vapor deposition(RF-PECVD) is commonly used for anti-reflection coating and passivation in crystalline silicon solar cell fabrication. In this paper, characteristics of the deposited silicon nitride was studied with change of working pressure, deposition temperature, gas ratio of $NH_3$ and $SiH_4$, and RF power during deposition. The deposition rate, refractive index and effective lifetime were analyzed. The (100) p-type silicon wafers with one-side polished, $660-690{\mu}m$, and resistivity $1-10{\Omega}{\cdot}cm$ were used. As a result, when the working pressure increased, the deposition rate of SiNx was increased while the effective life time for the $SiN_x$-deposited wafer was decreased. The result regarding deposition temperature, gas ratio and RF power changes would be explained in detail below. In this paper, the optimized condition in silicon nitride deposition for silicon solar cell was obtained as 1.0 Torr for the working pressure, $400^{\circ}C$ for deposition temperature, 500 W for RF power and 0.88 for $NH_3/SiH_4$ gas ratio. The silicon nitride layer deposited in this condition showed the effective life time of > $1400{\mu}s$ and the surface recombination rate of 25 cm/s. The crystalline silicon solar cell fabricated with this SiNx coating showed 18.1% conversion efficiency.

• 한국태양에너지학회 논문집
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• 제31권1호
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• pp.37-43
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• 2011

In this paper, the optimized doping condition of crystalline silicon solar cells with $156{\times}156\;mm^2$ area was studied. To optimize the drive-in temperature in the doping process, the other conditions except variable drive-in temperature were fixed. These conditions were obtained in previous studies. After etching$7\;{\mu}m$ of the surface to form the pyramidal structure, the silicon nitride deposited by the PECVD had 75~80nm thickness and 2 to 2.1 for a refractive index. The silver and aluminium electrodes for front and back sheet, respectively, were formed by screen-printing method, followed by firing in 400-425-450-550-$850^{\circ}C$ five-zone temperature conditions to make the ohmic contact. Drive-in temperature was changed in range of $830^{\circ}C$ to $890^{\circ}C$to obtain the sheet resistance $30{\sim}70\;{\Omega}/{\box}$ with $10\;\Omega}/{\box}$ intervals. Solar cell made in $890^{\circ}C$ as the drive-in temperature revealed 17.1% conversion efficiency which is best in this study. This solar cells showed $34.4\;mA/cm^2$ of the current density, 627 mV of the open circuit voltage and 79.3% of the fill factor.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.382-382
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• 2010

$TaO_2$ thin films as gate dielectrics have been proposed to overcome the problems of tunneling current and degradation mobility in achieving a thin equivalent oxide thickness. An extremely thin $SiO_2$ layer is used in order to separate the carrier in MOSFETchannel from the dielectric field fluctuation caused by phonons in the dielectric which decreases the carrier mobility. The electronic and optical properties influenced the device performance to a great extent. The atomic structure of amorphous and crystalline Tantalum oxide ($TaO_2$) gate dielectrics thin film on Si (100) were grown by utilizing atomic layer deposition method was examined using Ta-K edge x-ray absorption spectroscopy. By using X-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy (REELS) the electronic and optical properties was obtained. In this study, the band gap (3.400.1 eV) and the optical properties of $TaO_2$ thin films were obtained from the experimental inelastic scattering cross section of reflection electron energy loss spectroscopy (REELS) spectra. EXAFS spectra show that the ordered bonding of Ta-Ta for c-$TaO_2$ which is not for c-$TaO_2$ thin film. The optical properties' e.g., index refractive (n), extinction coefficient (k) and dielectric function ($\varepsilon$) were obtained from REELS spectra by using QUEELS-$\varepsilon$(k, $\omega$)-REELS software shows good agreement with other results. The energy-dependent behaviors of reflection, absorption or transparency in $TaO_2$ thin films also have been determined from the optical properties.

• 반도체디스플레이기술학회지
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• 제13권4호
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• pp.21-25
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• 2014

The silicon nitride ($SiN_x$) film for surface passivation and anti-reflection coating of crystalline silicon solar cell is very important and it is generally deposited by plasma enhanced chemical vapor deposition (PECVD). PECVD can be divided into low and high frequency method. In this paper, the $SiN_x$ film deposited by low and high frequency PECVD method was studied. First, to optimize the $SiN_x$ film deposited by low frequency PECVD method, the refractive index was measured by varying the process conditions like $SiH_4$, $NH_3$, $N_2$ gas rate, and RF power. When $SiH_4$ gas rate was increased and $NH_3$ gas rate was decreased, the refractive index was increased. The refractive index was also increased with RF power decline. Second, to compare the characteristics of the low and high frequency PECVD $SiN_x$ film, the refractive index was measured by varying $NH_3/SiH_4$ gas ratio and RF power and the minority carrier lifetime of before and after high temperature treatment process was also measured. The refractive index of both low and high frequency PECVD $SiN_x$ film was decreased with increase in $NH_3/SiH_4$ gas ratio and RF power. After high temperature treatment process, the minority carrier lifetime of both low and high frequency PECVD $SiN_x$ film was increased and increased degree was similar. The minority carrier lifetime of low frequency PECVD $SiN_x$ was increased from $11.03{\mu}m$ to $28.24{\mu}m$ and that of high frequency PECVD $SiN_x$ was increased from $11.60{\mu}m$ to $27.10{\mu}m$.

• 공업화학
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• 제10권1호
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• pp.35-40
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• 1999

Hard segment 함량이 35%와 53%로 서로 다른 두 개의 열가소성 폴리우레탄 시료 (각각 TPU-35와 TPU-35)와 이들을 70/30, 50/50, 30/70 wt%로 용융 블렌딩한 조성들이 annealing 온도와 시간에 따라 변화할 수 있는 유리전이온도와 용융피이크, 분자량 및 분자량 분포도의 변화를 관찰하였다. TPU의 $T_g$는 hard segment 함량이 많을수록 높은 값을 보였으며 annealing 온도와 시간에 따라 hard microdomain 구조의 미약한 관계에 의한 용융피이크의 크기와 온도 등이 변하였다. 이는 annealing에 의한 열이 long-range 혹은 short-range segmental motion의 거동, 비결정 microphase 구조의 order-disorder 전이, domain의 크기 및 결정구조의 질서도 등 여러 가지 복합적인 영향을 끼친 결과로 사료된다. 미세 결정의 용융 결과로 나타나는 $T_3$단일 피이크만이 존재하는 annealing 온도는 TPU-35, TPU-44와 TPU-53에 대해 각각 130, 170 및 $180^{\circ}C$이었다. Annealing 온도와 시간에 따른 분자량 및 분자량 분포도 변화 측정에서 TPU-35는 $135^{\circ}C$에서, TPU-44(TPU-35/TPU-53=50/50 블랜드)는 $170^{\circ}C$, 그리고 TPU-53은 $180^{\circ}C$에서 수평균 및 중량평균 분자량의 증가와 더불어 polydispersity(PI)는 감소를 보였다. 이 변화는 같은 조건의 annealing 온도에 따른 용융피이크 변화에서 $T_3$단일 피이크만 남게 되는 annealing온도와 일관성을 보이고 있는데, 이는 이들 시료가 특정한 annealing 온도에서 chain dissociation과 recombination이 동시에 일어나므로써 빚어진 결과로 추측된다.

• 지질공학
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• 제21권4호
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• pp.381-391
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• 2011

암석의 풍화작용은 암석의 강도를 약화시키고 궁극적으로는 지질공학적 대상물의 안정성을 저하시키게 된다. 화학적 풍화지수와 같이 암석의 풍화등급을 이용하여 암반의 안정성을 평가하는 여러 가지 지표가 널리 사용되고 있다. 본 연구에서는 편광현미경 관찰, XRF 전암분석에 의한 화학적 풍화지수, X-선회절 (XRD)분석에 의한 광물의 종류와 함량분석, 전자현미경(SEM/EDS)에 의한 미세조직 분석, BET측정법에 의한 기공크기와 비표면적 분석, 미소촛점 X-선 CT 등을 이용하여 결정질 암석(편마암, 화강암)의 풍화정도와 미세조직, 공극의 특성을 분석하였다. 이차광물의 생성과 미세구조의 발달특정은 광물의 용해, 침전, 파쇄반응과 같이 복합적인 요소에 의하여 영향을 받게 된다. 그러므로 단순히 전암분석치를 이용하여 계산하는 풍화지수(CIA, CWI 등)와 같은 기존의 화학적 풍화지표들은 암석의 풍화정도를 제대로 반영하지 못함이 밝혀졌다. 따라서 이 외에도 광물조성비, 미세조직, 미세공극의 특성을 고려한 새로운 평가기법이 요구된다.

• 한국광학회지
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• 제8권6호
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• pp.445-449
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• 1997

비정질상과 결정상으로 가역변화하는 특성을 이용하여, 기존의 읽기전용 기록매체인 Compact Disk(CD)를 대체할 차세대 광기록매체로 주목받고 있는 Ge$_{2}$Sb$_{2}$Te$_{5}$(GST)의 상태변화에 따른 굴절율과 소광계수, 박막의 두께와 밀도 등 박막상수들을 구하였다. DC 스퍼터링방법으로 제작한 두꺼운 GST의 복소굴절율을 양자역학적 분산식을 이용한 모델링방법으로 구하고, 한편으로는 표면미시거칠기를 AFM(Atomic Force Microscopy)으로 결정한 다음, 타원해석 스펙트럼들을 수치해석적 역방계산하여 구한 복소굴절율과 비교하였다. 결정상과 비정질상일 때의 GST의 복소굴절율을 각각 구하고 이로부터 계산된 반사율을 측정된 반사율과 비교함으로써 수치해석적인 방법이 실제 GST의 복소굴절율과 더 일치하는 값ㅇㄹ 가지게 됨을 확인하였다. 이렇게 구한 GST의 복소굴절율을 기준데이터로 사용하여 실제 설계두께를 가지는 GST박막의 두께 및 표면거칠기층을 정량적으로 구하였다.다.

• 한국식품영양학회지
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• 제32권3호
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• pp.161-166
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• 2019

The objective of this study was to evaluate the quality-based characteristics of Prunus mume fruit syrup, which is manufactured with various sugared sweeteners for suggestion of suitable alternative sweetener. Sweetener such as sucrose (MHP1), crystalline fructose (MHP2) and liquid fructo-oligosaccharide (MHP3) are used to manufacture Prunus mume fruit syrup. The sugar content of MHP1, MHP2 and MHP3 showed 53, 54 and $36^{\circ}Brix$, respectively. The total organic acid content of MHP1, MHP2 and MHP3 was 2.22, 3.07 and 3.71%. The total free sugar content of MHP1, MHP2 and MHP3 was 54.39, 47.52% and 31.62%, respectively. The appearance of MHP1 and MHP2 remained unchanged for the entire period but MHP3 had molded since the first week. This was as a result of the low total free sugar content in MHP3 sugared with liquid fructo-oligosaccharide compared to MHP1 and MHP2 sugared with solid sucrose and fructose. The sensory characteristics of MHP2 manufactured with crystalline fructose indicated an above average quality, indicating that it is difficult to manufacture Prunus mume fruit syrup using liquid sugar. It is suggested that crystalline fructose characterized solid form and lower glycemic index than sucrose be useful to manufacture Prunus mume fruit syrup as alternative sweetener.