• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.11 no.6
• /
• pp.259-263
• /
• 2001

The continuum model of transient point defect dynamics to predict the concentrations of interstitial and vacancy is established by estimating expressions for the thermophysical properties of intrinsic point defects. And the point defect distribution in a Czochralski-grown 200 mm silicon crystal and the location of oxidation-induced stacking fault ring(OiSF-ring) created during the cooling of crystals are calculated by using the numerical analysis. The purpose of this paper is to show that his approach lead to predictions that are consistent with experimental results. Predicted point defect distributions by transient point defect dynamic analysis are in good qualitative agreement with experimental data under widely and abruptly varying crystal pull rates when correlated with the position of the OiSF-ring .

• Current Photovoltaic Research
• /
• v.8 no.1
• /
• pp.17-26
• /
• 2020

It is clear that monocrystalline Silicon (Si) ingots are the key raw material for semiconductors devices. In the present industries markets, most of monocrystalline Silicon (Si) ingots are made by Czochralski Process due to their advantages with low production cost and the big crystal diameters in comparison with other manufacturing process such as Float-Zone technique. However, the disadvantage of Czochralski Process is the presence of impurities such as oxygen or carbon from the quartz and graphite crucible which later will resulted in defects and then lowering the efficiency of Si wafer. The heat transfer plays an important role in the formation of Si ingots. However, the heat transfer generates convection in Si molten state which induces the defects in Si crystal. In this study, a crystal growth simulation software was used to optimize the Si crystal growth process. The furnace and system design were modified. The results showed the melt-crystal interface shape can affect the Si crystal growth rate and defect points. In this study, the defect points and desired interface shape were controlled by specific crystal growth rate condition.

• Journal of Information Display
• /
• v.4 no.1
• /
• pp.1-8
• /
• 2003

Recent progress in both low pretilt and high pretilt defect free C1 surface stabilized ferroelectric liquid crystal (SSFLC) devices is reviewed. First, by numerical calculation to investigate the balance between surface azimuthal anchoring energy and bulk elastic energy within the confined chevron layer geometry of C1 and C2, it is possible to achieve a zigzag free C1 state by low azimuthal anchoring alignment with a low pretilt angle. The critical azimuthal anchoring coefficient for defect free C1 state is calculated. Its relationship with elastic constant, chevron angle as well as surface topography effect are also discussed. Second, using $5^{\circ}$ oblique SiO deposition alignment method a defect free, large memory angle, high contrast ratio and bistable C1 SSFLC display, which has potential for electronic paper applications has also been developed. The electrooptical properties and bistability of this device have been investigated. Various aspects of defect control are also discussed.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.9 no.8
• /
• pp.1793-1798
• /
• 2005

We model the nucleation and motion of defects in the liquid crystal display device with inhomogeneous surface by using fast Q-tensor method, which can calculate scalar order parameter S and nucleation of the defect in the liquid crystal director field. In order to model the defect, homeotropic aligned liquid crystal cell with step inhomogeneous electrode which has a height of $1{\mu}m$ is used. From the simulation, we can observe the nucleation and line of the defect from surface inhomogeneity and the experiment is performed for confirmation.

• Proceedings of the Optical Society of Korea Conference
• /
• 2002.07a
• /
• pp.94-95
• /
• 2002

Photonic crystal (PC) has special interests for their promising applications in three-dimensional photon control and integrated devices. In a nonlinear photonic crystal (NPC), optical intensity in a defect layer is greatly increased due to the location function of NPC and nonlinearity. The nonliearity of the defect layer is very much enhanced because the group velocity is reduced and the interaction time between light and nonlinear medium in the defect layer is enlarged. (omitted)

• Korean Journal of Crystallography
• /
• v.11 no.3
• /
• pp.176-181
• /
• 2000

Computer-based atomistic simulation methods are applied to address quantitatively the crystal defect chemistry of strontium hexaaluminate, SrAl/sub 12/O/sub 19/. Our calculations show that oxygen Frenkel disorder is the dominant intrinsic defect mode to be expected in the multi-component oxide, though Schottky disorder may also exist. When La and Mg enter into SrAl/sub 12/O/sub 19/. Mg prefers to occupy Al(3)4f tetrahedral sites in the magnetoplumbite structure. Our calculations also indicate that O/sub Sr/ defect is improbable in the structure.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2003.07a
• /
• pp.1096-1100
• /
• 2003

A fast Q-tensor method, which can model the defect dynamics in a liquid crystal director field is presented. The method is used to model the defect dynamics occurring during the "warm-up" of a ${\pi}-cell$ device.

• Journal of the Optical Society of Korea
• /
• v.9 no.2
• /
• pp.74-78
• /
• 2005

With the fast Q-tensor method, which can model the defect dynamics in a liquid crystal director field, the nucleation and dynamical behavior of defects is modeled. In order to model the defect, hormeotropic aligned liquid crystal cell with step inhomogeneous electrode which has a height of $1\;{\mu}m$ is used. From the simulation, we can observe the nucleation and line of the defect from surface inhomogeneity and the experiment is performed for confirmation. The experimental result is compared with numerical modeling in order to verify the simulation of the defect nucleation.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.20 no.6
• /
• pp.249-253
• /
• 2010

After the specimen of A-site defect perovskite $La_{1/3}NbO_3$ single crystal was manufactured, the dielectric properties were studied between the temperature range of 10 and 800 K. The dielectric anomaly appeared at 50 K and 650 K, and, at about 650 K, the thermal hysteresis of dielectric constant was shown. The ac-conductivity of bulk showed the lowest activation energy of 0.43 eV at 560~690 K. Based on the results, it is assumed that the dielectric anomaly at 50K and 650 K was due to the antiparallel shift of $Nb^{5+}$-ion and the rearrangement of $Nb^{3+}$-ion, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07a
• /
• pp.257-265
• /
• 2002

A stoichiometric mixture of evaporating materials for AgInS$_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, AgInS$_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy(HWE) system. The source and substrate temperatures were 680 $^{\circ}C$ and 410 $^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of AgInS$_2$ single crystal thin films measured from Hall effect by van der Pauw method are 9.35${\times}$10$\^$16/ cm$\^$-3/ and 294 $\textrm{cm}^2$/V$.$s at 293 K, respectively. From the optical absorption measurement, the temperature dependence of the energy band gap on AgInS$_2$ single crystal thin films was found to be E$\_$g/(T) : 2.1365 eV - (9.89 ${\times}$ 10$\^$-3/ eV) T$^2$/(2930 + T). After the as-grown AgInS$_2$ single crystal thin films was annealed in Ag-, S-, and In-atmospheres, the origin of point defects of AgInS$_2$ single crystal thin films has been investigated by using the photoluminescence(PL) at 10 K. The native defects of V$\_$AG/, V$\_$S/, Ag$\_$int/, and S$\_$int/ obtained from PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the S-atmosphere converted AgInS$_2$ single crystal thin films to an optical p-type. Also, we confirmed that In in AgInS$_2$/GaAs did not form the native defects because In in AgInS$_2$ single crystal thin films did exist in the form of stable bonds.