• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.3
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• pp.139-146
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• 2012

Natural hydroxyapatite powder was obtained from the calcination of bovine bones and its porous compacts were fabricated by pressureless sintering at 1100 and $1200^{\circ}C$ for 1h. To evaluate and compare their biocompatibility with porosity, we investigated the support of osteoblast cells growth and cytotoxicity using the MG-63 cell line model in vitro. Sintered hydroxyapatite ceramics have a porous microstructure with a relative density of 65 % at $1100^{\circ}C$ and 82 % at $1200^{\circ}C$. Cells adherence to the surface of hydroxyapatite ceramics was observed in a day after the cell culture, and the spreading of cytoplasm around the nucleus was shown after 3 day cell culture. Most of cells were extended to the surface of hydroxyapatite through the wide area. Cell viability was nearly the same till 3 days culturing. But the rate of cell growth is higher in the specimen sintered at $1100^{\circ}C$ than that of $1200^{\circ}C$. It indicates that the porosity is an important factor to enhance the cell viability in the porous hydroxyapatite ceramics derived from bovine bones.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.1
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• pp.21-26
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• 2011

Ni-YSZ (Yttria Stabilized Zirconia) composite powders were fabricated by glycine nitrate process. The prepared powders were sintered at $1300{\sim}1400^{\circ}C$ for 4 h in air and reduced at $1000^{\circ}C$ for 2 h in a nitrogen and hydrogen atmosphere. The microstructure, electrical conductivity, thermal expansion and mechanical properties of the Ni-YSZ cermets have been investigated with respect to the volume contents of Ni. A porous microstructure consisting of homogeneously distributed Ni and YSZ phases together with well-connected grains was observed. It was found that the open porosity, electrical conductivity, thermal expansion and bending strength of the cermets are sensitive to the volume content of Ni. The Ni-YSZ cermet containing 40 vol% Ni was ascertained to be the optimum composition. This composition offers sufficient open porosity of more than 30 %, superior electrical conductivities of 917.4 S/cm at $1000^{\circ}C$ and a moderate average thermal expansion coefficient of $12.6{\times}10^{-6}^{\circ}C^{-1}$ between room temperature and $1000^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.430-430
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• 2007

In general, polyimides (PIs) are used in liquid crystal displays (LCDs) as alignment layer of liquid crystals (LCs). Up to date, the rubbing alignment technique has been widely used to align liquid crystals on the PI surface, which is suitable for mass-production of LCDs because of its simple process and high productivity. However, this method has some disadvantages. Rubbed PI surfaces include the debris left by the cloth and the generation of electrostatic charges during rubbing process. Therefore, rubbing-free techniques for LC alignment are strongly required in LCD technology. In this experiment, PI was uniformly coated on indium-tin-oxide electrode substrates to form LC alignment layers using a spin-coating method and the PI layers were subsequently imidized at 433 K for 1 h. The thickness of the PI layer was set at 50 nm. The LC alignment layer surfaces were exposed to an $Ar^+$ ion-beam under various ion-beam energies. The antiparallel cells and twisted-nematic (TN) cells for the measurement of pretile angle and electro-optical characteristics were fabricated with the cell gap of 60 and $5\;{\mu}m$, respectively. The LC cells were filled with nematic LC (NLC, MJ001929, Merck) and were assembled. The NLC alignment capability on ion-beam-treated PI was observed using photomicroscope and the pretilt angle of the NLC was measured by the crystal-rotation method at room temperature. Voltage-transmittance (V-T) and response time characteristics of the ion-beam irradiated TN cell were measured by a LCD evaluation system.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.4
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• pp.291-296
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• 2020

The high power of a shingled photovoltaic module can be attributed to its low cell-to-module loss. The production of high power modules in limited area requires high efficiency solar cells. Shingled photovoltaic modules can be made by divided solar cells, which can be produced by the laser scribing process. After dividing the 21% PERC cell using laser scribing, the efficiency decreased by approximately 0.35%. However, there was no change in the efficiency of the solar cell having relatively lower efficiency, because the laser scribing process induce higher heat damages in solar cells with high efficiency. To prove this phenomena, the J₀ (leakage current density) of each cell was analyzed. It was found that the J₀ of 21% PERC increased about 17 times between full and divided solar cell. However, the J₀ of 20.2% PERC increased only about 2.5 times between full and divided solar cell.

• Journal of the Korean Solar Energy Society
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• v.25 no.4
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• pp.1-11
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• 2005

The stoichiometric mixture of evaporating materials for the $CuInSe_2$ single crystal thin film was prepared from horizontal furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CuInSe_2$, it was found tetragonal structure whose lattice constant $a_0$ and $c_0$ were $5.783\;{\AA}$ and $11.621\;{\AA}$, respectively. To obtain the $CuInSe_2$ single crystal thin film, $CuInSe_2$ mixed crystal was deposited on throughly etched GaAs(100) by the HWE(Hot Wall Epitaxy) system. The source and substrate temperature were $620^{\circ}C$ and $410^{\circ}C$ respectively. The crystalline structure of $CuInSe_2$ single crystal thin film was investigated by the double crystal X-ray diffraction(DCXD). Hall effect on this sample was measured by the method of Van der Pauw and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by impurity scattering in the temperature range 30 K to 100 K and by lattice scattering in the temperature range 100 K to 293 K. The temperature dependence of the energy band gap of the $CuInSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.1851\;eV-(8.99{\times}10^{-4}\;eV/K)T^2/(T+153\;K)$. The open-circuit voltage, short current density, fill factor, and conversion efficiency of $n-CdS/p-CuGaSe_2$ heterojunction solar cells under $80\;mW/cm^2$ illumination were found to be 0.51V, $29.3\;mA/cm^2$, 0.76 and 14.3 %, respectively.

• Journal of the Korean Solar Energy Society
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• v.38 no.1
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• pp.25-36
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• 2018

The stoichiometric mixture of evaporating materials for the $CaAl_2Se_4$: Co single crystal thin film was prepared from horizontal furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CaAl_2Se_4$, it was found orthorhomic structure whose lattice constant $a_0$, $b_0$ and $c_0$ were 6.4818, $11.1310{\AA}$ and $11.2443{\AA}$, respectively. To obtain the $CaAl_2Se_4$: Co single crystal thin film, $CaAl_2Se_4$: Co mixed crystal was deposited on throughly etched Si (100) by the HWE (Hot Wall Epitaxy) system. The source and substrate temperature were $600^{\circ}C$ and $440^{\circ}C$ respectively. The crystalline structure of $CaAl_2Se_4$: Co single crystal thin film was investigated by the double crystal X-ray diffraction (DCXD). Hall effect on this sample was measured by the method of Van der Pauw and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by impurity scattering in the temperature range 30 K to 100 K and by lattice scattering in the temperature range 100 K to 293 K. The temperature dependence of the energy band gap of the $CaAl_2Se_4$: Co obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=3.8239eV-(4.9823{\times}10^{-3}eV/K)T_2/(T+559K)$. The open-circuit voltage, short current density, fill factor, and conversion efficiency of $p-Si/p-CaAl_2Se_4$: Co heterojunction solar cells under $80mW/cm^2$ illumination were found to be 0.42 V, $25.3mA/cm^2$, 0.75 and 9.96%, respectively.

• Journal of Microbiology
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• v.42 no.4
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• pp.340-345
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• 2004

To investigate the co-expression and crystallization of a fusion gene between the Bacillus thuringiensis crystal protein and a foreign protein in B. thuringiensis, the expression of the Cry1Ac fused with green fluorescent protein (GFP) genes in a B. thuringiensis $Cry^-B$ strain was examined. The cry1Ac gene was cloned in the B. thuringiensis-E. coli shuttle vector, pHT3101, under the control of the native cry1Ac gene promoter, while the GFP gene was inserted into the XhoI site upstream of the proteolytic cleavage site, in the middle region of the crylAc gene (pProAc-GFP). The B. thuringiensis $Cry^-B$ strain carrying pProAc-GFP (ProAc-GFP/CB) did not produce any inclusion bodies. However, the transformed strain expressed fusion protein forms although the expression level was relatively low. Furthermore, an immu­noblot analysis using GFP and Cry1Ac antibodies showed that the fusion protein was not a single spe­cies, but rather multiple forms. In addition, the N-terminal fragment of Cry1Ac and a non-fused GFP were also found in the B. thuringiensis $Cry^-B$ strain after autolysis. The sporulated cells before autolysis and the spore-crystal mixture after autolysis of ProAc-GFP/CB exhibited insecticidal activities against Plutella xylostella larvae. Accordingly, the current results suggest that a fusion crystal protein produced by the transfomant, ProAc-GFP/CB, can be functionally expressed but easily degraded in B. thuring­iensis.

• The Korea Journal of Herbology
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• v.23 no.2
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• pp.25-31
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• 2008

Objectives : In order to distinguish morphological characteristics of trunk bark and root bark of Ulmus davidiana var. japonica (Rehder) Nakai and the trunk bark and root bark of Hemiptelea davidii Planchon were sampled and compared in terms of their external and internal features with flour states according to their medical use, through microscopic examination. Methods : The slice of the tested material made by paraffin section technique was colored with Safranine Malachite Green contrast methods, and the flour of it was mounted by the liquid made by the same ratio of each of glycerin, acetic acid, and water, and then observed and photographed by olymphus-BHT. Results : 1. Internal Features 1) A large parenchymatous cell was observed in the phloem of the slice of both trunk bark and root bark of Ulmi Cortex, However, both of the trunk bark and root bark of Hemipteleae Cortex did not have parenchymatous cell in the phloem; instead, stone cells including much square crystal of calcium oxalate were distributed around fiber bundle, and the parenchymatous cell included much druse crystal of calcium oxalate. 2) In both the Ulmi Cortex and Hemipteleae Cortex, rhytidome was observed in trunk bark, but not in root bark, but in the parenchymatous cell of the root bark of the Ulmi Cortex contained starch grain. 2. Flour States 1) In the flour of root bark of the Ulmi Cortex, a large parenchymatous cell was observed. However, in the flour of trunk bark and root bark of Hemipteleae Cortex, no parenchymatous eel was found; instead, stone cell including square crystal of calcium oxalate and druse crystal of calcium oxalate were observed. 2) There was no remarkable difference between the trunk bark and root bark of Hemipteleae Cortex. However, starch grain was contained in the parenchymatous cell of the root bark of Ulmi Cortex but not in the trunk bark of it. Conclusions : There were some morphological differences in external, internal, and flour parts of Ulmi Cortex and Hemipteleae Cortex. In particular, there was a morphological difference in flour states between the trunk bark and root bark of Ulmi Cortex, it is possible to use microscope to distinguish their flour states.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.28 no.4
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• pp.141-147
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• 2018

Solar energy has attracted big attentions as one of clean and unlimited renewable energy. Solar energy is transformed to electrical energy by solar cells which are comprised of multi-silicon wafer or mono-silicon wafer. Monosilicon wafers are fabricated from the Czochralski method. In order to decrease fabrication cost, increasing a poly-silicon charge size in one quartz crucible has been developed very much. When we increase a charge size, the temperature control of a Czochralski equipment becomes more difficult due to a strong melt convection. In this study, we simulated a Czochralski equipment temperature at 20 inch and 24 inch in quartz crucible diameter and various charge sizes (90 kg, 120 kg, 150 kg, 200 kg, 250 kg). The simulated temperature profiles are compared with real temperature profiles and analyzed. It turns out that the simulated temperature profiles and real temperature profiles are in good agreement. We can use a simulated profile for the optimization of real temperature profile in the case of increasing charge sizes.

• Current Photovoltaic Research
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• v.1 no.2
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• pp.103-108
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• 2013

Epitaxial growth of a high-quality thin Si film is essential for the application to low-cost thin-film Si solar cells. A polycrystalline Si film was grown on a $SiO_2$ substrate at $450^{\circ}C$ by a Al-assisted crystal growth process. For the purpose, a thin Al layer was deposited on the $SiO_2$ substrate for Al-assisted crystal growth. However, the epitaxial growth of Si film resulted in a rough surface with humps. Then, we introduced a thin amorphous Si seed layer on the Al film to minimize the initial roughness of Si film. With the help of the Si seed layer, the surface of the epitaxial Si film was smooth and the crystallinity of the Si film was much improved. The grain size of the $1.5-{\mu}m$-thick Si film was as large as 1 mm. The Al content in the Si film was 3.7% and the hole concentration was estimated to be $3{\times}10^{17}/cm^3$, which was one order of magnitude higher than desirable value for Si base layer. The results suggest that Al-doped Si layer could be use as a seed layer for additional epitaxial growth of intrinsic or boron-doped Si layer because the Al-doped Si layer has large grains.