• Transactions of the Korean Society of Mechanical Engineers A
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• v.32 no.12
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• pp.1047-1054
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• 2008

In this paper, the molecular dynamics (MD) simulations are performed with single-crystal copper blocks under simple shear and simple tension to investigate the effect of size and crystal orientation. There are many variances to give influences such as deformation path, temperature, specimen size and crystal orientation. Among them, the crystal orientation has a primary influence on the volume averaged stress. The numerical results show that the volume averaged shear stress decreases as the specimen size increases and as the crystal orientation changes from single to octal. Furthermore, the Schmid factor and yield stress for crystal orientation are evaluated by using the MD simulation on the standard triangle of stereographic projection.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.5
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• pp.191-194
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• 2008

We will focus on the horizontal Bridgman growth system to analyze the transport phenomena numerically, because the simple furnace system and the confined growth environment allow for the precise understanding of the transport phenomena in solidification process. In conventional melt growth process, the dopant concentration tends to vary significantly along the crystal. In this work, we propose the modification of crucible geometry for improving the productivity of silicon single-crystal growth by controlling axial specific resistivity distribution. Numerical analysis has been performed to study the transport phenomena of dopant impurities in conventional and proposed Bridgman silicon growth using the finite element method and implicit Euler time integration. It has been demonstrated using mathematical models and by numerical analysis that proposed method is useful for obtaining crystals with superior uniformity along the growth direction at a lower cost than can be obtained by the conventional melt growth process.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.06a
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• pp.45-48
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• 1998

For the single crystal growth of silicon, a global analysis of heat transfer in a CZ furnace was carried out using the finite element method, where the radiative heat transfer between the surfaces that possess both specular and/or diffuse reflectance components was taken into account, and then the effect of the specular reflection of the crystal and/or melt on the CZ crystal growth was numerically investigated.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.33 no.5
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• pp.447-454
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• 2009

Rate-independent crystal plasticity model suffers from the non-uniqueness of activated slip systems and the determination of the shear slip rates on the active slip systems. In this paper, a time-integration algorithm which circumvents the problem of the multiplicity of the slip systems was developed and implemented into the user subroutine VUMAT of a commercial finite element program ABAQUS. The magnitude of the slip shears on the active slip systems in f.c.c Cu single crystal aligned with the specific crystallographic orientation was investigated to validate our solution procedure. Also, texture developments under various deformation modes such as simple compression, simple tension and plane strain compression were compared with the results of the rate-dependent model by using the rate-independent crystal plasticity model. The computation time employing the rate-independent model is much more reduced than the those of the rate-dependent model.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.3 no.2
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• pp.149-156
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• 1993

Polycrystalline silicon was produced from metallurgical-grade Si by unidirectional solidification. Variations of impurity concentration and resistivity in the ingots have been investigated. X-ray diffraction analysis has also been performed to examine the crystal orientation. According to the X-ray diffraction analysis on the polycrystalline silicon, preferential orientation was changed from ( 220) into ( III ) with decreasing growth rate. Also, with increasing growth rate and fraction solidified, the resistivity tends to decrease.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 1999.08a
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• pp.313-319
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• 1999

The development of deformation texture in FCC polycystalline metals during rolling was simulated by the finite element analysis using a large-deformation, elaatic-plastic, rate-dependent polycrystalline model of crystal plasticity. Different plastic anisotropy due to different orientation of each crystal makes inhomogeneous deformation. Assuming plane strain compression condition, the simulation with a high rate sensitivity resulted in main component change from Dillamore at low rate sensitivity to Brass component.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2014.10a
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• pp.579-580
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• 2014

In this research, modeling and analysis of an ultrasonic transducer composed of single crystal piezoelectric material(PMN-28PT) are conducted with FEM in reference with that composed of piezoelectric ceramic(PZT-4). Acoustic performances of the ultrasonic transducer are compared with magnitude, phase of impedance and trasmitting voltage response according to the type of piezoelectric materials.

• YAKHAK HOEJI
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• v.25 no.1
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• pp.37-42
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• 1981

Penicillin derivatives have a stability problem by hydrolysis of their .betha.-lactam ring. At high temperature, crystal water is released from penicillin derivatives, especially ampicillin trihydrate and concerns itself in hydrolysis. Penicillin derivatives having crystal water show different crystal states and different stability according to the variation of different condition on the process of manufacturing. The stability of ampicillin trihydrate in solid states was determined. Physico-pharmaceutical properties of this compound were determined by using IR spectra, X-ray powder diffraction and differential thermal analysis (DTA).

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.2
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• pp.197-206
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• 1997

A SiC epilayer on the 6H-SiC crystal substrate was grown by chemical vapor deposition (CVD). The crystal structure of the SiC epilayer was investigated by using the X-ray diffraction patterns and the Roman scattering spectroscopy. The SiC epilayer on the 6H-SiC substrate was grown to be homoepilayer by CVD. In order to distinguish a certain SiC polytype mixed in the SiC crystal grown by the modified Lely method, we have calculated the X-ray diffraction intensities and Brags angles of the typical SiC crystal powders. By comparing the measured X-ray diffraction pattern with the calculated ones, it was identified that the SiC crystal grown by the modified Lely method was the 6H-SiC crystal mixed some 15R-SiC.

• Journal of the Korean Ceramic Society
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• v.32 no.2
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• pp.270-278
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• 1995

Nd : YAl3(BO3)4 (NYAB) single crystal has been developed for green laser. In this experiment, we found K2O/3MoO3/0.5B2O3 to be a suitable flux for NYAB crystal growth, and grew NYAB crystal by TSSG method using this flux. By varying the cooling rate of solution, seed orientation, and rotation speed, the effects of these growth conditions on the crystal quality and its morphology were examined. Suitable growth conditiions were a cooling rate slower than 2.4$^{\circ}C$/day, the rotation speed of 25~30 rpm, and the <001> seed orienttion. The phases of grown crystal, coexisting and volatile materials were investigated by X-ray diffraction. In addition, the possiblity of laser action was examined by UV analysis.