• Journal of the Korean Ceramic Society
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• v.31 no.12
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• pp.1429-1436
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• 1994

We have prepared Ba0.5Sr0.5TiO3 thin films on Si substrate without buffer layer. Deposition was carried out by off-axis rf magnetron sputtering method using Ba0.5Sr0.5TiO3 stoichiometric target. The substrate temperature was changed from 40$0^{\circ}C$ to $700^{\circ}C$ during deposition. As the substrate temperature increased, relative intensity of (110) peak increased up to $600^{\circ}C$, however preferred orientation changed from (110) to (h00) beyond $650^{\circ}C$ of substrate temperature. Deposited films showed microstructures with fine grains whose diameters are less than 100 nm, and columnar structure was observed in the cross-sectional SEM micrograph. AES depth profile showed no significant diffusion at the interfacial reaction area. The effective dielectric constant of films showed maximum value at $600^{\circ}C$, and the leakage current increased with increasing substrate temperature, which may be ascribed to the crystallization of amorphous phases at grain boundary.

• Transactions of the Korean Society of Mechanical Engineers
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• v.9 no.4
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• pp.395-402
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• 1985

The apparent activation energy Q$_{c}$ and the applied stress exponent n have been determined during creep of Al 7075 alloy over the temperature range of 90.deg. C to 320.deg. C (0.4-0.65T$_{m}$) and stress range of 1.85 kgf/mm$^{2}$ to 21 kgf/mm$^{2}$, respectively in order to investigate the creep behavior. Constant load creep tests were carried out in the experiment. At round the temperature of 200.deg. C-240.deg. C and under the stress level 8.13-9.55kgf/mm$^{2}$ and again at around the temperature of 280.deg. C-320.deg. C and under the stress level of 1.85-2.55kgf/mm$^{2}$, the creep behavior obeyed for the creep deformation was nearly equal to that of the volume self diffusion of pure aluminum (34kcal/mole). But at around the temperature of 90.deg. C and under the stress level of 10-21kgf/mm$^{2}$, the creep behavior did not obey a simple power-law relation and the apparent activation enrgy, Q$_{c}$ was 26.01 kcal/mole. From the above facts, at around the temperature of 200.deg. C-240.deg. C and 280.deg. C-320.deg. C, the creep deformation for Al 7075 alloy seemed to be controlled by dislocation climb but at 90.deg. C, by cross slip over the range of experimental stress conditions.tions.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2017.05a
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• pp.109-109
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• 2017

알지네이트 하이드로 젤은 해조류에서 추출되는 천연 고분자인 알지네이트가 칼슘 또는 마그네슘 양이온과 이온가교(Ioninc cross linking)를 형성할 때 알지네이트의 고분자 구조가 칼슘, 마그네슘 양이온을 감싸면서 형성되는 고분자이다. 알지네이트 하이드로 젤은 높은 생체적합성(Biocompatibility)으로 인해 세포 재생을 위한 조직공학 및 재생의학, 약물전달 등의 제약 관련 분야에 광범위하게 적용될 수 있는 물질로 많은 연구가 이루어지고 있다. 본 연구에서는 마이크로 플루이딕 칩을 이용하여 알지네이트 튜브를 제조하였다. 먼저 유동 포커싱 방식(flow focussing)을 유도할 수 있는 PDMS(Polydimethylsiloxane) 마이크로 플루이딕 칩을 제조하였다. 마이크로 플루이딕 칩은 CNC(Computer Numeric Control) milling machine을 이용한 template를 만들고 NOA mold를 이용하여 최종 PDMS 칩을 제작하였다. 튜브를 만들기 위한 마이크로 채널은 내부 채널 ($200{\times}200um$), 중간 채널 ($200{\times}200um$) 및 외부 채널 ($200{\times}200um$)로 구성되며 내부, 중간, 외부의 유체가 합류하는 수집채널은 폭 500 um, 깊이 200 um로 구성되었다. 운반체로는 5%의 acetic acid를 함유한 mineral oil를 이용하였으며 내부의 core flow는 $H_2O$로 하였다. 중간 유체인 2% 알지네이트 프리폴리머는 칼슘 이온의 존재 하에서 젤화 과정이 매우 빠르기 때문에 마이크로 채널 내부에서의 반응을 제어하고 막힘을 방지하기 위해 수용성 복합 칼슘-에틸렌 디아민 테트라 아세트산 (EDTA)을 사용하였다. 본 마이크로 플루이딕 칩에 각각의 유체를 이동시켰을 때, 운반체인 oil phase의 수소이온은 중간 유체인 알지네이트 프리폴리머와의 계면을 통해 확산되어 Ca-EDTA 복합체로부터 칼슘 양이온의 방출을 유발하게 된다. 방출된 칼슘 양이온은 알지네이트 고분자와의 이온 가교를 통해 알지네이트 하이드로 젤을 형성하여, 각 유체의 flow에 따라 알지네이트 튜브를 쉽고 빠르게 제조 가능하였다. 본 연구에서 제조된 알지네이트 튜브는 인체 내 장기간 약물 전달을 위한 나노섬유로 활용하거나 인공혈관을 구성하는 extracellular matrix로 활용될 잠재력을 가지고 있어 추후 활발한 연구개발이 진행될 예정이다.

• Journal of Powder Materials
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• v.18 no.3
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• pp.290-296
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• 2011

Titanium carbonitride is more perspective materials compared to titanium carbide. It can be used in tool industry and special products because of its higher strength, abrasive wear-resistance and especially its strong chemical stability at high temperatures. We produced STS+TiCxNy composite by the spark plasma sintering for higher strength and studied the characteristics. The planar and cross-sectional microstructures of the specimens were observed by scanning electron microscopy. Characterizations of the carbon and nitride phases on the surface of composite were carried out using an X-ray diffractometer. During annealing TiCxNy particles diffusion into STS 430 was observed. After annealing, sintering isolations between particles were formed. It causes decreasing of mechanical strength. In addition when annealing temperature was increased hardness increased. Heterogeneous distribution of alloying elements particles was observed. After annealing composites, highest value of hardness was 738.1 MHV.

• Journal of the Korea Society of Computer and Information
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• v.12 no.2 s.46
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• pp.63-70
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• 2007

The Data Encryption Standard (DES) is a block cipher that encrypts a 64 bit block of plaintext into a 64 bit block of ciphertext. The DES has been a worldwide standard for 20 years since it was adopted in 1976. strong. But, due to the rapid development of hardware techniques and cryptanalysis, the DES with 64-bit key is considered to be not secure at the present time. Therefore it became necessary to increase the security of DES. The NG-DES(New Generation DES)[1] is an encryption system which upgrades the encryption security of DES by the key extension and the usage of non-linear f function. It extends not only the size of plaintext and ciphertext to 128 bit but also the Fiestel structure used in each round. This structure has a weak point that the change of each bit of plaintext does not affect all bits of ciphertext simultaneously. In this paper, we propose a modified Fiestel structure of DES and thus increased confusion and diffusion by effectively cross-connecting between outputs in a round and inputs in next round.

• Journal of the Korean Society of Safety
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• v.9 no.4
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• pp.29-41
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• 1994

High temperature tensiles tests, steady state creep tests, internal stress tests and creep rupture tests using Al 7075 alloy were performed over the temperature range of 9$0^{\circ}C$~50$0^{\circ}C$ and stress range of 0.64~17.2(kgf/$\textrm{mm}^2$) in order to investigate the creep behavior and predict creep rupture life From the apparent activation energy Qc and the applied stress exponent n measured, at the temperature range of 9$0^{\circ}C$~l2$0^{\circ}C$, the creep deformation seemed to be controlled by cross slip. On the other hand at the temperature of 20$0^{\circ}C$~23$0^{\circ}C$ the creep deformation seemed to be controlled by dislocation climb but at 47$0^{\circ}C$~50$0^{\circ}C$, by diffusion creep. And the rupture life(t$_{f}$) might be represented by anthermal process attributed to the difference of the applied stress dependence of Internal stress and the ratio of the Internal stress to the applied stress, the thermal activated process attributied to the temperature dependence of the internal stress. Also the ratio between stress dependence of primary creep rate and that of minimum creep rate was measured 0.46, the minimum creep rate is expected to be appromately obtained from master creep curve including the relationship primary creep rate and minumum creep rate. Finally the relationship new rupture parameter and logarithmic stress was represented with including the ratio between the dependence of primary creep rate and that of minimum creep rate, using the new rupture parameter the rupture life predition is exactly expected.d.

• Journal of the Microelectronics and Packaging Society
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• v.13 no.4
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• pp.45-50
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• 2006

Copper via filling is the important factor in 3-D stacking interconnection of SiP (system in package). As the packaging density is getting higher, the size of via is getting smaller. When DC electroplating is applied, a defect-free hole cannot be obtained in a small size via hole. To prevent the defects in holes, pulse and pulse reverse current was applied in copper via filling. The holes, $20\and\;50{\mu}m$ in diameter and $100{\sim}190\;{\mu}m$ in height. The holes were prepared by DRIE method. Ta was sputtered for copper diffusion barrier followed by copper seed layer IMP sputtering. Via specimen were filled by DC, pulse and pulse-reverse current electroplating methods. The effects of additives and current types on copper deposits were investigated. Vertical and horizontal cross section of via were observed by SEM to find the defects in via. When pulse-reverse electroplating method was used, defect free via were successfully obtained.

• Bulletin of the Korean Chemical Society
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• v.29 no.2
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• pp.422-426
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• 2008

Hemodialysis graft coated with paclitaxel prevents stenosis; however, large initial burst release of paclitaxel causes many negative effects such as drug toxicity and inefficient drug loss. Therefore we developed and tested a novel coating method, double dipping, to provide controlled and sustained release of paclitaxel locally. Expanded polytetrafluoroethylene (ePTFE) grafts were dipped twice into a solution of several different paclitaxel concentrations. In vitro release tests of the double dipping method showed that early burst release could be somewhat retarded and followed by sustained release for a long time. We observed the effect of paclitaxel coating by double dipping in porcine model of arterio-venous (AV) grafts between the common carotid artery and the external jugular vein. 12 weeks after constructing AV grafts, cross sections of the graft venous anastomosis were obtained and analyzed. Paclitaxel coated ePTFE grafts by double dipping were observed to prevent neointimal hyperplasia and therefore reduced stenosis of the arteriovenous hemodialysis grafts, especially at the graft venous anastomosis sites. Our results demonstrate that second dipping of ePTFE graft, which was already coated once with paclitaxel, washes off the drug on a surface of the graft and affects the ratio of paclitaxel on the surface to that of the inner space, possibly by diffusion: thus the early burst of drug can be somewhat reduced.

• Korean Journal of Microbiology
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• v.41 no.1
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• pp.47-52
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• 2005

This study was carried out to identify bacterial strains adhered to human scalp hair and to investigate the antibiotic susceptibility of them. A total of 39 isolates were obtained from patients in intensive care units and healthy persons. The most common species isolated was Staphylococcus epidermidis (19 isolates), followed by S. aureus (14 isolates), S. waneri (5 isolates), and S. pasteuri (1 isolate). The susceptibility of isolates to amikacin, ampicillin, bacitracin, carbenicillin, cefazolin, cefoperazone, chloramphenicol, erythromycin, gentamicin, methicillin, nalidixic acid, neomycin, oxacillin, penicillin, streptomycin, tetracycline and vancomycin was determined by the disk diffusion method. All of the antibiotic resistant isolates were obtained from patient scalp hair. To examine the effect of conventional shampoo and detergent SDS on removing of bacteria from hair, we treated hair with culture solution of S. aureus. The bacteria attached to hair were not removed even by repeated washing with detergents. These results suggested that hair could be a source of bacterial contamination in hospital.

• Journal of Astronomy and Space Sciences
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• v.34 no.4
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• pp.343-352
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• 2017

A space plasma facility has been operated with a back-diffusion-type plasma source installed in a mid-sized vacuum chamber with a diameter of ~1.5 m located in Satellite Technology Research Center (SaTReC), Korea Advanced Institute of Science and Technology (KAIST). To generate plasma with a temperature and density similar to the ionospheric plasma, nickel wires coated with carbonate solution were used as filaments that emit thermal electrons, and the accelerated thermal electrons emitted from the heated wires collide with the neutral gas to form plasma inside the chamber. By using a disk-type Langmuir probe installed inside the vacuum chamber, the generation of plasma similar to the space environment was validated. The characteristics of the plasma according to the grid and plate anode voltages were investigated. The grid voltage of the plasma source is realized as a suitable parameter for manipulating the electron density, while the plate voltage is suitable for adjusting the electron temperature. A simple physical model based on the collision cross-section of electron impact on nitrogen molecule was established to explain the plasma generation mechanism.