• Transactions of the Korean Society of Mechanical Engineers A
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• v.26 no.11
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• pp.2383-2389
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• 2002

This paper describes an experimental study on fatigue life extension by using cold working process in fastener hole of aircraft structure. Cold working process was applied for A12024-7351 specimens by considering the effect of edge margin on fatigue life. It is generally recognized that cold working process offers a protective zone around fastener hole of aluminum aircraft structure due to the residual compressive stresses which lead to retardation of crack growth. Thus this process provides the beneficial effect of increasing the fatigue life of the component. there by decreasing maintenance costs. It has also been successfully incorporated into damage tolerance and structural integrity programs. Cold working specimens were tested at constant amplitude peak cyclic stresses. Fatigue life of cold working specimen compared with that of specimen fabricated with base material. The increase of fatigue life for cold working specimen is discussed by both considering the effect of residual compressive stresses measured by X-ray diffraction technique and quantitative effect of edge margin.

• Journal of the Korean Society of Industry Convergence
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• v.6 no.4
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• pp.299-305
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• 2003

This research is for the relationship with heat treatment cooling temprature and the characteristic of Mechanical properties of Boron-Addition-Steel, the main material and SM25C steel, the sub material, structure viewing fractography, hardness test, tensite test and are carried out after the manufacturing small-specimen treated with heat of $750^{\circ}C$, $850^{\circ}C$, $1050^{\circ}C$. The influence to the Mechanical properties accompanied by AISI51B20, Boron-Addition-steel shows the following result. 1. The influenc of heat treatment by the content of cabon-steel is dominant. Addition of boron result is Strengthening structure effectively by segregation and improving over all mechanical characters such as good. it results from the increase of temacity by the stability of inter granular with improvement of harden-ability. 2. Boron-Addition-Steel exist in the from of martensite structure accompanied by the ferrite precipitition centering around grain boundary, and is improved to Hv 200. 3. The height of harden-ability and fatigue stress the influence of heat results from crystal structure of martensite by difference of strength level in the structure of ferrite and doesn't have am effect on sensibility of temperature, and turns out to defend on production and growth of Matrix-structure-factor.

• Journal of the Korean Ceramic Society
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• v.25 no.3
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• pp.201-206
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• 1988

To investigate the effects of Mo addition on the microstructures and mechanical properties of Al_2O_3$ ceramics, two kinds of Mo particles with average sizes of 2-${\mu}{\textrm}{m}$ and 6-${\mu}{\textrm}{m}$ were used as additives. It was shown that Mo particles inhibited the grain growth of Al_2O_3$, and the smaller Mo particles were more effective. In case of 2-${\mu}{\textrm}{m}$ Mo dispersion, the bending strength and the fracture toughness were increased. Dispersion of 6-${\mu}{\textrm}{m}$ MO did not increase the strength but improved the fracture toughness a little. The toughening mechanisms of Al_2O_3$-Mo composites are thought to be the crack deflection and microcracking mechanisms.

• Journal of the Korean Ceramic Society
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• v.25 no.6
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• pp.704-712
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• 1988

In order to investigate the effect of the second phase on Al2O3 matrix, SiC whisker was dispersed in Al2O3 matrix as a second phase over the content range of 5vol% to 20vol%. To this mixture, Y2O3 or TiO2 powder was added as a sintering additive before isostatically pressing and pressureless sintering at 1800-190$0^{\circ}C$ for 90min in N2 atmosphere. With increasing SiC whisker content, relative densities of composites were decreased and the grain growth of Al2O3 was restricted. When Y2O3 was added as a sintering aid the sintering temperature was 180$0^{\circ}C$, the maximum values of flexural strength, hardness and fracture toughness were 537MPa, 12.1GPa, 3.7MPa.m1/2, respectively. However, when the sintering temperature was elevated to 190$0^{\circ}C$, maximum values of flexural strength, hardness and fracture toughness were 453MPa, 17.5GPa, 4.9MPa.m1/2, respectively. Improved mechanical properties are assumed to be attributed to the crack deflection by the second phase SiC whisker and whisker pullout mechanism.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.183-184
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• 2013

Two main MBE growth techniques have been used: plasma-assisted MBE (PA-MBE), which utilizes a rf plasma to supply active nitrogen, and ammonia MBE, in which nitrogen is supplied by pyrolysis of NH3 on the sample surface during growth. PA-MBE is typically performed under metal-rich growth conditions, which results in the formation of gallium droplets on the sample surface and a narrow range of conditions for optimal growth. In contrast, high-quality GaN films can be grown by ammonia MBE under an excess nitrogen flux, which in principle should result in improved device uniformity due to the elimination of droplets and wider range of stable growth conditions. A drawback of ammonia MBE, on the other hand, is a serious memory effect of NH3 condensed on the cryo-panels and the vicinity of heaters, which ruins the control of critical growth stages, i.e. the native oxide desorption and the surface reconstruction, and the accurate control of V/III ratio, especially in the initial stage of seed layer growth. In this paper, we demonstrate that the reliable and reproducible growth of GaN on Si (110) substrates is successfully achieved by combining two MBE growth technologies using rf plasma and ammonia and setting a proper growth protocol. Samples were grown in a MBE system equipped with both a nitrogen rf plasma source (SVT) and an ammonia source. The ammonia gas purity was ＞99.9999% and further purified by using a getter filter. The custom-made injector designed to focus the ammonia flux onto the substrate was used for the gas delivery, while aluminum and gallium were provided via conventional effusion cells. The growth sequence to minimize the residual ammonia and subsequent memory effects is the following: (1) Native oxides are desorbed at $750^{\circ}C$ (Fig. (a) for [$1^-10$] and [001] azimuth) (2) 40 nm thick AlN is first grown using nitrogen rf plasma source at $900^{\circ}C$ nder the optimized condition to maintain the layer by layer growth of AlN buffer layer and slightly Al-rich condition. (Fig. (b)) (3) After switching to ammonia source, GaN growth is initiated with different V/III ratio and temperature conditions. A streaky RHEED pattern with an appearance of a weak ($2{\times}2$) reconstruction characteristic of Ga-polarity is observed all along the growth of subsequent GaN layer under optimized conditions. (Fig. (c)) The structural properties as well as dislocation densities as a function of growth conditions have been investigated using symmetrical and asymmetrical x-ray rocking curves. The electrical characteristics as a function of buffer and GaN layer growth conditions as well as the growth sequence will be also discussed. Figure: (a) RHEED pattern after oxide desorption (b) after 40 nm thick AlN growth using nitrogen rf plasma source and (c) after 600 nm thick GaN growth using ammonia source for (upper) [110] and (lower) [001] azimuth.

• Journal of the Korean Ceramic Society
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• v.43 no.2 s.285
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• pp.106-113
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• 2006

PMN-PZT films with thickness of $5\;{\mu}m$ were deposited on $Pt/Ti/SiO_2/Si$ substrate at room temperature using aerosol deposition process. The films showed fairly dense microstructure without any crack. XRD and TEM analysis revealed that the films consisted of randomly oriented nanocrystalline and amorphous phases. Post-annealing process was employed to induce crystallization and grain growth of the as-deposited films and to improve the electrical properties. The annealed film showed markedly improved electrical properties in comparison with as-deposited film. The film after annealing at $700^{\circ}C$ for 1h exhibited the best electrical properties. Dielectric constant $(\varepsilon_r)$, remanent polarization $(P_r)$ and piezoelectric constant $(d_{33})$ were 1050, $13\;{\mu}C/cm^2$ and 120 pC/N, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.1
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• pp.11-14
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• 2009

Yb and Zn co-doped $LiNbO_3$ single crystal rods which had a diameter of 2 mm and a length of $15{\sim}25 mm$ were grown by micro-pulling down (${\mu}-PD$) method. The single crystals were successfully grown and had a uniform diameter and a smooth surface without crack. We realized of $LiNbO_3$ single crystals were hexagonal structure to compare with peaks of $LiNbO_3$ powder by Raman spectra. The threshold level of Zn concentration which is effective for optical damage were observed as about 1 mol% with IR transmission spectra.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.4
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• pp.645-650
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• 1998

Alumina- and yttria-coated SiC powder was prepared by the surface-induced precipitation method, and sintered properties of silicon carbide prepared from this powder were investigated. After a well dispersion of SiC powders in the aqueous solution of $Al_2(SO_4)_3$ and $Y_2(SO_4)_3$, the mixed precursors of aluminum hydroxide, aluminum carbonate, yttrium hydroxide, and yttrium carbonate were precipitated on the surfaces of SiC particles through the hydrolysis reaction of urea. SiC specimens with alumina and yttria exhibit, 97.8% of theoretical density after the sintering at $1900^{\circ}C$ for 2 hrs. During annealing at $2000^{\circ}C$, $\beta$longrightarrow$\alpha$ phase transformation of SiC had taken place and resulted with a rodlike microstructure. Toughness of sintered SiC was enhanced by crack deflection around the rodlike grains. In case of annealing less than that of 3 hr, the fracture toughness of SiC was slightly improved with increasing the amount of sintering aid. However, annealed specimens for a long time showed constant fracture toughness even though the amount of sintering aid increased. It is resulted that the main factor for toughening in annealed SiC for a long time is the pullout effect of rodlike grains during the propagation of cracks, and the amount of sintering aids is less effective on the fracture toughness of SiC.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.28 no.3
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• pp.135-139
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• 2018

In this study, we report the effect of VI/III ratio on ${\alpha}-Ga_2O_3$ epilayer on sapphire substrate by halide vapor phase epitaxy. The surface of ${\alpha}-Ga_2O_3$ epilayer grown with various VI/III ratios was flat and crack-free. To analyze the optical properties of the ${\alpha}-Ga_2O_3$ epilayers, the transmittance and an optical band gap were measured. The optical band gap was shown to be around 5 eV and showed a proportional increase in VI/III ratios. To determine the crystal quality of alpha gallium oxide grown with a ratio of 23, closed to the theoretical optical band gap, the FWHM was measured by HR-XRD. The calculated dislocation density of screw and edge were $1.5{\times}10^7cm^{-2}$ and $5.4{\times}10^9cm^{-2}$, respectively.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.2 s.43
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• pp.35-40
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• 2007

The pull strength and fracture mechanism were investigated to evaluate the reliability and compatibility of Sn-8Zn-3Bi joints, the solder paste on lead and lead-free plating under thermal shock conditions. At the Sn-8Zn-3Bi solder joint, no crack initiation was observed during thermal shock test. After 1000 cycles, the strength of the solder joint decreased not sharply but reduced gradually compared with initial conditions. The decrement of strength was affected by ${\gamma}-Cu_5Zn_8$ IMC growth which caused the IMC fracture on the fracture surface and a change in fracture mode and initial crack point. Clearly, the Sn-8Zn-3Bi solder shows good reliability properties and compatibility with lead-free plated Cu LF under thermal shock temperatures between 248K and 423K.