• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.105-105
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• 2009

$ZrO_2$ is one of the most attractive high dielectric constant (high-k) materials. As integrated circuit device dimensions continue to be scaled down, high-k materials have been studied more to resolve the problems for replacing the EY31conventional $SiO_2$. $ZrO_2$ has many favorable properties as a high dielectric constant (k= 20~25), wide band gap (5~7 eV) as well as a close thermal expansion coefficient with Si that results in good thermal stability of the $ZrO_2/Si$ structure. In order to get fine-line patterns, plasma etching has been studied more in the fabrication of ultra large-scale integrated circuits. The relation between the etch characteristics of high-k dielectric materials and plasma properties is required to be studied more to match standard processing procedure with low damaged removal process. Due to the easy control of ion energy and flux, low ownership and simple structure of the inductively coupled plasma (ICP), we chose it for high-density plasma in our study. And the $BCl_3$ included in the gas due to the effective extraction of oxygen in the form of $BCl_xO_y$ compound In this study, the surface kinetic properties of $ZrO_2$ thin film was investigated in function of Ch addition to $BCl_3/Ar$ gas mixture ratio, RF power and DC-bias power based on substrate temperature. The figure 1 showed the etch rate of $ZrO_2$ thin film as function of gas mixing ratio of $Cl_2/BCl_3/Ar$ dependent on temperature. The chemical state of film was investigated using x-ray photoelectron spectroscopy (XPS). The characteristics of the plasma were estimated using optical emission spectroscopy (OES). Auger electron spectroscopy (AES) was used for elemental analysis of etched surface.

• Proceedings of the Korean Society of Applied Pharmacology
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• 1994.04a
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• pp.186-186
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• 1994

Many agonists have been known to activate the hydrolysis of membrane phospholipids through the bindings with corresponding receptors on the various cells. Diacylglycerol and inositol 1,4,5-trisphosphate(IP3) generated by the action of phosphoinositide-specific phospholipase C (PI-PLC) are well known second messengers for the activation of protein kinase C and the mobilization of Ca2+ in many cells. Three types of PI-PLC isozyme (${\alpha}$,${\gamma}$, and $\delta$) and several subtrpes for each type have been identified from mammalian sources by purification of enzymes and cloning of their cDNAs. Each type PI-PLC isozyme is coupled to different receptors and mediators, for example, ${\beta}$-types are coupled to the seven-transmembrane-receptors via Gq family of G-proteins and ${\beta}$-types directly to the receptor tyrosine kinases. Specific modulators for the signaling pathway through each type of PI-PLC should be very useful as potential potential candidates for lend substances in developing novel drugs. To establish the sensitive and convenient screening systems for searching modulators on PI-PLC mediated signaling, two kinds of approaches have been tried. (1) Establishment of in vitro assay condition for each type of PI-PLC isozyme: Overexpression by using vaccinia virus and purification of each isozyme was carried out for the preparation of large amounts of enaymes. Optimum and sensitive assay condition for the measurements of PI-ELC activities were established. (2) Development of the cell lines in which each type of PI-PLC is permanently overexpressed: A fibroblast cell line (3T3${\gamma}$1-7) in which PI-PLC-${\gamma}$1 was overexpressed by using pZip-neo expression vector was developed and used for the measurement of PDGF-induced IP3 formation. The responses for IP3 formed in 3T3${\gamma}$1-7 cells by the treatment of PDGF is 8 times more sensitive than those in control cells. 3T3${\gamma}$l-7 cell is useful for the screening of the inhibitors on the PDGF-induced cellular responses from large number of samples in a small volume(50 ${\mu}$l) and short time(5-15 min). Using these systems, we screened hundreds of herb-extracts for the inhibition of PDGF-induced IP3 formation and selected several extracts that showed the inhibition as the candidates for isolation and characterization of active substances. The determination of the acting point of selected extracts or fractions in the PDGF signaling pathway has been analyzing.

• Journal of Environmental Health Sciences
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• v.44 no.5
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• pp.491-501
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• 2018

Objectives: The aims of this study were to compare concentrations and the correspondence of human blood cadmium by using graphite furnace atomic absorption spectrometry (GF-AAS) and inductively coupled plasma-mass spectrometry (ICP-MS), which are representative methods of heavy metal analysis. Methods: We randomly selected 79 people who agreed to participate in the research project. After confirming the linearity of the calibration curves for GF-AAS and ICP-MS, the concentrations of cadmium in a quality control standard material and blood samples were measured, and the correlation and the degree of agreement were compared. Results: The detection limit of ICP-MS (IDL: $0.000{\mu}g/L$, MDL: $0.06{\mu}g/L$) was lower than that of GF-AAS (IDL: $0.085{\mu}g/L$, MDL: $0.327{\mu}g/L$). The coefficient of variation of the quality control standard material showed stable values for both ICP-MS (clinchek-1: 5.35%, clinchek-2: 6.22%) and GF-AAS (clinchek-1: 7.92%, clinchek-2: 5.22%). Recovery was relatively high for both ICP-MS (clinchek-1: 95.1%, clinchek-2: 92.8%) and GF-AAS (clinchek-1: 91.4%, clinchek-2: 98.8%), with more than 90%. The geometric mean, median, and percentile of blood samples were all similar. The agreement of the two instruments compared with the bias of the analytical values found that about 81% of the analytical values were within ${\pm}30%$ of the deviation from the ideal reference line (y=0). As a result of the agreement limit, the value included in the confidence interval was about 94%, which shows high agreement. Conclusion: In this study, we confirmed there was no significant difference in concentrations of a quality control standard material and blood samples. Since ICP-MS showed lower concentrations than GF-AAS at concentrations below the method detection limit of GF-AAS, it is expected that more precise results will be obtained by analyzing blood cadmium with ICP-MS.

• Journal of Korean Tunnelling and Underground Space Association
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• v.8 no.2
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• pp.151-163
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• 2006

Although various methods for effective modeling of pre-reinforced zones have been suggested for numerical analysis of large section tunnels, tunnel designers refer to empirical cases and literature reviews rather than engineering methods because ones who use commercial programs are unfamiliar with a macro-scale approach in general. Therefore, this paper suggests a simple micro-scale approach combined with the macro-scale approach to determine equivalent design parameters for effective numerical modeling of pre-reinforced zones in tunnel. This new approach is to determine the equivalent stiffness of pre-reinforced zones with combination of ground, bulb, and steel in series or/and parallel. For verification, 3-D numerical results from the suggested approach are compared with those of a realistic model. The comparison suggests that two cases make best approximation to a realistic solution: One is related to the series-parallel stiffness system (hereafter SPSS) in which bulb and steel are coupled in parallel and then connected to the ground in series, and the other is the series stiffness system (hereafter SSS) in which only bulb and steel are coupled in series. The SPSS is recommended for stiffness calculation of pre-reinforced zones because the SSS is inconvenient and time-consuming. The SPSS provides slightly bigger vertical displacement at tunnel crown in weathered rock than other cases and give almost identical results to a realistic model for horizontal displacement at tunnel spring line and ground surface settlement. Displacement trends on weathered rock and weathered soil are similar. The SPSS which is suggested in this paper represents the behavior mechanism of pre-reinforced area effectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.145-145
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• 2008

High-k materials have been paid much more attention for their characteristics with high permittivity to reduce the leakage current through the scaled gate oxide. Among the high-k materials, $ZrO_2$ is one of the most attractive ones combing such favorable properties as a high dielectric constant (k= 20 ~ 25), wide band gap (5 ~ 7 eV) as well as a close thermal expansion coefficient with Si that results in good thermal stability of the $ZrO_2$/Si structure. During the etching process, plasma etching has been widely used to define fine-line patterns, selectively remove materials over topography, planarize surfaces, and trip photoresist. About the high-k materials etching, the relation between the etch characteristics of high-k dielectric materials and plasma properties is required to be studied more to match standard processing procedure with low damaged removal process. Among several etching techniques, we chose the inductively coupled plasma (ICP) for high-density plasma, easy control of ion energy and flux, low ownership and simple structure. And the $BCl_3$ was included in the gas due to the effective extraction of oxygen in the form of $BCl_xO_y$ compounds. During the etching process, the wafer surface temperature is an important parameter, until now, there is less study on temperature parameter. In this study, the etch mechanism of $ZrO_2$ thin film was investigated in function of $Cl_2$ addition to $BCl_3$/Ar gas mixture ratio, RF power and DC-bias power based on substrate temperature increased from $10^{\circ}C$ to $80^{\circ}C$. The variations of relative volume densities for the particles were measured with optical emission spectroscopy (OES). The surface imagination was measured by scanning emission spectroscope (SEM). The chemical state of film was investigated using energy dispersive X-ray (EDX).

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.25 no.2
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• pp.156-163
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• 2014

In this paper, a compact circularly polarized metamaterial patch antenna using cross aperture-coupled feed is proposed. The CP antenna utilizes the -1 mode that is induced by the composit right-left handed(CRLH) transmission line. Since the -1 mode has the same properties with the $TM_{010}$ mode of the conventional patch antenna, the circular polarization(CP) can be realized. If two orthogonal modes are excited with $90^{\circ}$ phase difference, the CP property can be obtained. In order to obtain two orthogonal modes and $90^{\circ}$ phase difference, 4 mushroom structures having the shape of square are employed. The width and length of the cross aperture are optimized through the design algorithm. The fabricated antenna is based on RT/duroid5880 substrate and the total area of the 4 mushroom is $0.25{\lambda}_0{\times}0.25{\lambda}_0$. The center frequency of the LHCP(Left-Handed Circular Polarization) antenna is measured as 1.622 GHz and circular polarization bandwidth(3 dB) is measured as 3 MHz. The center frequency of the RHCP(Right-Handed Circular Polarization) antenna is measured as 1.609 GHz and circular polarization bandwidth (3 dB) is measured as 3 MHz, respectively. The measured radiation efficiency of LHCP antenna is 61.1 % and the measured radiation efficiency of RHCP antenna is 54.5 %.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.3
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• pp.399-405
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• 2011

In this paper, we present the design of Q-band LC VCO and injection locking buffer for 77 GHz automotive radar sensor using 130 nm RF CMOS process. To improve the phase noise characteristic of LC tank, the transmission line is used. The negative resistance by the active device cross-coupled pair of buffer is used for high output power, with or without oscillation of buffer. The measured phase noise is -102 dBc/Hz at 1 MHz offset frequency and tuning range is 34.53~35.07 GHz. The output power is higher than 4.1 dBm over entire tuning range. The fabricated chip size is $510{\times}130\;um^2$. The power consumption of LC VCO is 10.8 mW and injection locking buffer is 50.4 mW from 1.2 V supply.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.47 no.7
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• pp.489-498
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• 2019

The airloads and structural loads of Light Civil Helicopter (LCH) rotor are investigated using a loose CFD/CSD coupling. The structural dynamics model for LCH 5-bladed rotor cwith elastomeric bearing and inter-bladed damper is constructed using CAMRAD-II. Either isolated rotor or rotor-fuselage model is used to identify the effect of the fuselage on the aeromechanics behavior at a cruise speed of 0.28. The fuselage effect is shown to be marginal on the aeromechanics predictions of LCH rotor, though the effect can be non-negligible for the tail structure due to the prevailing root vortices strengthened by the fuselage upwash. A lifting-line based comprehensive analysis is also conducted to verify the CFD/CSD coupled analysis. The comparison study shows that the comprehensive analysis predictions are generally in good agreements with CFD/CSD coupled results. However, the predicted comprehensive analysis results underestimate peak-to-peak values of blade section airloads and elastic motions due to the limitation of unsteady aerodynamic predictions. Particularly, significant discrepancies appear in the structural loads with apparent phase differences.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.93-93
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• 2016

Large scale integrated circuits (LSIs) has been improved by the shrinkage of the circuit dimensions. The smaller chip sizes and increase in circuit density require the miniaturization of the line-width and space between metal interconnections. Therefore, an extreme precise control of the critical dimension and pattern profile is necessary to fabricate next generation nano-electronics devices. The pattern profile control of plasma etching with an accuracy of sub-nanometer must be achieved. To realize the etching process which achieves the problem, understanding of the etching mechanism and precise control of the process based on the real-time monitoring of internal plasma parameters such as etching species density, surface temperature of substrate, etc. are very important. For instance, it is known that the etched profiles of organic low dielectric (low-k) films are sensitive to the substrate temperature and density ratio of H and N atoms in the H2/N2 plasma [1]. In this study, we introduced a feedback control of actual substrate temperature and radical density ratio monitored in real time. And then the dependence of etch rates and profiles of organic films have been evaluated based on the substrate temperatures. In this study, organic low-k films were etched by a dual frequency capacitively coupled plasma employing the mixture of H2/N2 gases. A 100-MHz power was supplied to an upper electrode for plasma generation. The Si substrate was electrostatically chucked to a lower electrode biased by supplying a 2-MHz power. To investigate the effects of H and N radical on the etching profile of organic low-k films, absolute H and N atom densities were measured by vacuum ultraviolet absorption spectroscopy [2]. Moreover, using the optical fiber-type low-coherence interferometer [3], substrate temperature has been measured in real time during etching process. From the measurement results, the temperature raised rapidly just after plasma ignition and was gradually saturated. The temporal change of substrate temperature is a crucial issue to control of surface reactions of reactive species. Therefore, by the intervals of on-off of the plasma discharge, the substrate temperature was maintained within ${\pm}1.5^{\circ}C$ from the set value. As a result, the temperatures were kept within $3^{\circ}C$ during the etching process. Then, we etched organic films with line-and-space pattern using this system. The cross-sections of the organic films etched for 50 s with the substrate temperatures at $20^{\circ}C$ and $100^{\circ}C$ were observed by SEM. From the results, they were different in the sidewall profile. It suggests that the reactions on the sidewalls changed according to the substrate temperature. The precise substrate temperature control method with real-time temperature monitoring and intermittent plasma generation was suggested to contribute on realization of fine pattern etching.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.17 no.3
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• pp.24-30
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• 2016

Vertical and standing column well ground heat exchangers have mostly been installed for ground source heat pump systems (GSHP) and thermal response tests (TRT) have been applied to evaluate the thermal characteristics for these heat exchangers. In this paper, the TRT coupled with a line source method was applied to evaluate the thermal characteristics of the horizontal ground heat exchanger (HGHX). Load tests of a HGHX were also performed to examine the daily variations of the ground and fluid temperatures associated with the daily intermittent operation of GSHP. For this test, the straight HGHX (depth 2 m, length 50 m, 8 line) was installed in Ansan city. The results showed that the variations of ground thermal conductivity of HGHX during one year were relatively small with the range of $1.43{\sim}1.64W/m{\cdot}K$, and the maximum and minimum values appeared in December and May, respectively. Load tests with heat injection rate of 6.0 kW for 10 hours per day to HGHX during twelve days were performed in June, September and December, and resulted in a ground initial temperature rise of $4.31^{\circ}C$, $3.14^{\circ}C$, and $1.21^{\circ}C$ during these days, respectively.