• Analytical Science and Technology
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• v.27 no.6
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• pp.352-356
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• 2014

Various studies have been done to improve the properties of the steel by adding boron to the steel. Some studies have reported on the analysis of the boron in steel by AAS (atomic absorption spectrometry), ICP-OES(inductively coupled plasma-optical emission spectrometry), ICP-MS (inductively coupled plasma/mass spectrometry). The volatile loss of boron of steel in sample digestion and the separation procedure for avoiding matrix effect by high concentration of iron are difficulties for determination of boron in steel. The method to determine boron in steel by ICP-MS was developed without volatilization of boron in sample digestion step with $HNO_3-NH_4HF_2$ digestion method, and the additional separation process for avoiding matrix effect. Complete decomposition of steel with $HNO_3-NH_4HF_2$ digestion method, and boron determination by ICP-MS in the matrix of high concentration of iron were possible. Quantitative recoveries of boron in certified standard steel by new method in this study were 103 to 111%, and the relative standard deviation is less than 5%. The method detection limit was $1.17{\mu}g/g$.

• Tunnel and Underground Space
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• v.29 no.6
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• pp.439-455
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• 2019

A buffer is the major component of a high level radioactive waste repository. Due to their thermal conductivity and low permeability, bentonites have been considered as a key component of a buffer system in most countries. The deep geological condition generates ground water inflow and results in swelling pressure in the buffer and backfill. Investigation of swelling pressure of bentonite buffer is an important task for the safe disposal system. The swelling pressure that can be critical is affected by mechanical and hydro properties of the system. Therefore, in this study, a sensitivity analysis was conducted to examine the effect of hydro-mechanical (HM) behaviors in the MX-80 bentonite. Based on the results of the swelling pressure generation with HM model parameters, a coupled HM analysis of an unsaturated buffer and backfill in a deep geological repository was also carried out to investigate the major factor of the swelling pressure generation.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.25 no.2
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• pp.156-163
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• 2014

In this paper, a compact circularly polarized metamaterial patch antenna using cross aperture-coupled feed is proposed. The CP antenna utilizes the -1 mode that is induced by the composit right-left handed(CRLH) transmission line. Since the -1 mode has the same properties with the $TM_{010}$ mode of the conventional patch antenna, the circular polarization(CP) can be realized. If two orthogonal modes are excited with $90^{\circ}$ phase difference, the CP property can be obtained. In order to obtain two orthogonal modes and $90^{\circ}$ phase difference, 4 mushroom structures having the shape of square are employed. The width and length of the cross aperture are optimized through the design algorithm. The fabricated antenna is based on RT/duroid5880 substrate and the total area of the 4 mushroom is $0.25{\lambda}_0{\times}0.25{\lambda}_0$. The center frequency of the LHCP(Left-Handed Circular Polarization) antenna is measured as 1.622 GHz and circular polarization bandwidth(3 dB) is measured as 3 MHz. The center frequency of the RHCP(Right-Handed Circular Polarization) antenna is measured as 1.609 GHz and circular polarization bandwidth (3 dB) is measured as 3 MHz, respectively. The measured radiation efficiency of LHCP antenna is 61.1 % and the measured radiation efficiency of RHCP antenna is 54.5 %.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.477-477
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• 2008

For more than three decades, the gate dielectrics in CMOS devices are $SiO_2$ because of its blocking properties of current in insulated gate FET channels. As the dimensions of feature size have been scaled down (width and the thickness is reduced down to 50 urn and 2 urn or less), gate leakage current is increased and reliability of $SiO_2$ is reduced. Many metal oxides such as $TiO_2$, $Ta_2O_4$, $SrTiO_3$, $Al_2O_3$, $HfO_2$ and $ZrO_2$ have been challenged for memory devices. These materials posses relatively high dielectric constant, but $HfO_2$ and $Al_2O_3$ did not provide sufficient advantages over $SiO_2$ or $Si_3N_4$ because of reaction with Si substrate. Recently, $HfO_2$ have been attracted attention because Hf forms the most stable oxide with the highest heat of formation. In addition, Hf can reduce the native oxide layer by creating $HfO_2$. However, new gate oxide candidates must satisfy a standard CMOS process. In order to fabricate high density memories with small feature size, the plasma etch process should be developed by well understanding and optimizing plasma behaviors. Therefore, it is necessary that the etch behavior of $HfO_2$ and plasma parameters are systematically investigated as functions of process parameters including gas mixing ratio, rf power, pressure and temperature to determine the mechanism of plasma induced damage. However, there is few studies on the the etch mechanism and the surface reactions in $BCl_3$ based plasma to etch $HfO_2$ thin films. In this work, the samples of $HfO_2$ were prepared on Si wafer with using atomic layer deposition. In our previous work, the maximum etch rate of $BCl_3$/Ar were obtained 20% $BCl_3$/ 80% Ar. Over 20% $BCl_3$ addition, the etch rate of $HfO_2$ decreased. The etching rate of $HfO_2$ and selectivity of $HfO_2$ to Si were investigated with using in inductively coupled plasma etching system (ICP) and $BCl_3/Cl_2$/Ar plasma. The change of volume densities of radical and atoms were monitored with using optical emission spectroscopy analysis (OES). The variations of components of etched surfaces for $HfO_2$ was investigated with using x-ray photo electron spectroscopy (XPS). In order to investigate the accumulation of etch by products during etch process, the exposed surface of $HfO_2$ in $BCl_3/Cl_2$/Ar plasma was compared with surface of as-doped $HfO_2$ and all the surfaces of samples were examined with field emission scanning electron microscopy and atomic force microscope (AFM).

• Journal of the Korean Ceramic Society
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• v.39 no.9
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• pp.896-901
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• 2002

Since many process parameters of FHD(Flame Hydrolysis Deposition) are involved in forming multi-component amorphous silica film ($SiO_2-B_2O_3-P_2O_5-GeO_2$), it has not been easy to predict the optical, mechanical and thermal properties of deposited film from the simple process parameters, such as source flow rate. Furthermore, the prediction of final composition of film becomes even more difficult after sintering at high temperature due to the evaporation of volatile dopants. The motivation of the study was to clarify the quantitative relationship between simple process parameters such as the flow rate of source gases and resulting chemical composition of sintered film. Hence, the compositional analysis of silica soot by FTIR(Fourier Transformation Infrared Spectroscopy) and ICP-AES(Inductively Coupled Plasma-Atomic Emission Spectrometry) under the control of the amount of dopant was carried out to obtain the quantitative composition. By measuring spectrum of absorbance from FTIR, the compositional change of B-O, Si-O, OH($H_2O$) in silica film was measured. The concentrations of these dopants were also measured by ICP-AES, which were compared with the FTIR result. The final quantitative relationship between simple process parameters and composition was deduced from the comparison between two results.

• Clean Technology
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• v.25 no.1
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• pp.14-18
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• 2019

In general after the etching process, waste etching solution contains metals. (ex. Nickel (Ni), Chromium (Cr), Zinc (Zn), etc.) In this work, we proposed a recycling process for waste etching solution and refining from waste liquid contained nickel to make nickel metal nano powder. At first, the neutralization agent was experimentally selected through the hydrolysis of impurities such as iron by adjusting the pH. We selected sodium hydroxide solution as a neutralizing agent, and removed impurities such as iron by pH = 4. And then, metal ions (ex. Manganese (Mn) and Zinc (Zn), etc.) remain as impurities were refined by D2EHPA (Di-(2-ethylhexyl) phosphoric acid). The nickel powders were synthesized by liquid phase reduction method with hydrazine ($N_2H_4$) and sodium hydroxide (NaOH). The resulting nickel chloride solution and nickel metal powder has high purity ( > 99%). The purity of nickel chloride solution and nickel nano powders were measured by EDTA (ethylenediaminetetraacetic) titration method with ICP-OES (inductively coupled plasma optical emission spectrometer). FE-SEM (field emission scanning electron microscopy) was used to investigate the morphology, particle size and crystal structure of the nickel metal nano powder. The structural properties of the nickel nano powder were characterized by XRD (X-ray diffraction) and TEM (transmission electron microscopy).

• Food Science of Animal Resources
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• v.44 no.5
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• pp.1142-1155
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• 2024

This study investigated the impact of packaging methods coupled with high barrier packaging loaded with titanium dioxide (TiO₂) on the quality of chilled pork. The experiment consisted of three treatment groups: air packaging (AP), vacuum packaging (VP), and vacuum antibacterial packaging (VAP). Changes in total viable count (TVC), pH value, total volatile basic nitrogen (TVB-N) value, sensory attributes, and water holding capacity of pork were analyzed at 0, 3, 6, 9, and 12 d. TVC of the VAP group was 5.85 Log CFU/g at 12 d, which was lower than that of AP (6.95 Log CFU/g) and VP (5.93 Log CFU/g). The antibacterial film incorporating TiO2 effectively inhibited microorganism growth. The VAP group exhibited the lowest pH value and TVB-N value among all the treatment groups at this time. The findings demonstrated that the application of VAP effectively preserved the sensory attributes of pork, the hardness, cohesiveness and adhesiveness of pork in VAP group were significantly superior than those in AP group (p<0.05), but not significantly compared with VP group. On the 12 d, the CIE a^* value of pork in VAP group was significantly higher (p<0.05). This exhibited that VAP could effectively maintain the freshness of chilled pork and extend the shelf life for 3 d compared to the AP group. These findings provide empirical evidence to support the practical implementation of TiO₂-loaded packaging film in the food industry.

• Restorative Dentistry and Endodontics
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• v.39 no.2
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• pp.89-94
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• 2014

Objectives: The aim of this study was to evaluate the cytotoxicity, setting time and compressive strength of MTA and two novel tricalcium silicate-based endodontic materials, Bioaggregate (BA) and Biodentine (BD). Materials and Methods: Cytotoxicity was evaluated by using a 2,3-bis(2-methoxy-4-nitro-5-sulfophenyl)-5-((phenylamino)carbonyl)-2H-tetrazolium hydroxide (XTT) assay. Measurements of 9 heavy metals (arsenic, cadmium, chromium, copper, iron, lead, manganese, nickel, and zinc) were performed by inductively coupled plasma-mass spectrometry (ICP-MS) of leachates obtained by soaking the materials in distilled water. Setting time and compressive strength tests were performed following ISO requirements. Results: BA had comparable cell viability to MTA, whereas the cell viability of BD was significantly lower than that of MTA. The ICP-MS analysis revealed that BD released significantly higher amount of 5 heavy metals (arsenic, copper, iron, manganese, and zinc) than MTA and BA. The setting time of BD was significantly shorter than that of MTA and BA, and the compressive strength of BA was significantly lower than that of MTA and BD. Conclusions: BA and BD were biocompatible, and they did not show any cytotoxic effects on human periodontal ligament fibroblasts. BA showed comparable cytotoxicity to MTA but inferior physical properties. BD had somewhat higher cytotoxicity but superior physical properties than MTA.

• Journal of the Korean Chemical Society
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• v.45 no.4
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• pp.341-350
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• 2001

Aluminum Hydroxide was employed as a thermal retardent and flame retardent for Chloropolyethylene (CPE) rubbery materials which is the construction material of automotive oil cooler hose. and then cure characteristics, physical properties, thermal resistance and flame retardation of compounded rubber were investigated, and optimum mixing conditions of rubber and flame retarding agent were deduced from the experimental results. CPE rubber material which has excellent properties of chemical corrosion resistance and cold resistance and inexpensive in price was used to prepare rubber specimen. The by-product of ething, produced from the process of surface treatment of aluminum was processed to aluminum hydroxide via crushing and purification, which is characterized by XRD, PSA, SEM and ICP-AES techniques in terms of phase, size, distribution, morphology and components of particles and then mixed to CPE rubber materials in the range of 0~80 phr. Hardness, tensile strength, elongation and thermal properties of compounded rubber specimens were tested. The optimum mixing ratio of rubber to additives to give maximum effect on thermal resistance and flame retardation, within the range of tolerable specification for rubber materials, was determined to be 40 phr. The flame retardation of CPE rubber materials was found to be increased by 5 times at this mixing ratio.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.169-169
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• 2008

To keep pace with scaling trends of CMOS technologies, high-k metal oxides are to be introduced. Due to their high permittivity, high-k materials can achieve the required capacitance with stacks of higher physical thickness to reduce the leakage current through the scaled gate oxide, which make it become much more promising materials to instead of $SiO_2$. As further studying on high-k, an understanding of the relation between the etch characteristics of high-k dielectric materials and plasma properties is required for the low damaged removal process to match standard processing procedure. There are some reports on the dry etching of different high-k materials in ICP and ECR plasma with various plasma parameters, such as different gas combinations ($Cl_2$, $Cl_2/BCl_3$, $Cl_2$/Ar, $SF_6$/Ar, and $CH_4/H_2$/Ar etc). Understanding of the complex behavior of particles at surfaces requires detailed knowledge of both macroscopic and microscopic processes that take place; also certain processes depend critically on temperature and gas pressure. The choice of $BCl_3$ as the chemically active gas results from the fact that it is widely used for the etching o the materials covered by the native oxides due to the effective extraction of oxygen in the form of $BCl_xO_y$ compounds. In this study, the surface reactions and the etch rate of $Al_2O_3$ films in $BCl_3/Cl_2$/Ar plasma were investigated in an inductively coupled plasma(ICP) reactor in terms of the gas mixing ratio, RF power, DC bias and chamber pressure. The variations of relative volume densities for the particles were measured with optical emission spectroscopy (OES). The surface imagination was measured by AFM and SEM. The chemical states of film was investigated using X-ray photoelectron spectroscopy (XPS), which confirmed the existence of nonvolatile etch byproducts.