• Journal of the Korean Institute of Telematics and Electronics
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• v.12 no.4
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• pp.7-14
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• 1975

A significant new technique in the dsvelopment of micro-wave circuits is the process of untilization of coupled lines in the transverse electro-magnetic field. The bases for this technique are the application of even-and odd-mode characteristic impedances of the transmission line. This article describes the properties of directional couplers and explains a prccfdure usrd to design micro-strip directional couplers with the aid of the computer. The article also describes the experimental results obtained from seven microstrip couplers, which were built to verify the computer program and the approximate solutions. It can be seen that in cases at X-band where couplings of 10 to 20dB are required, the computer program and approximate solutions will produce good results.

• Journal of Surface Science and Engineering
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• v.49 no.1
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• pp.92-97
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• 2016

The plasma has been used in various industrial fields of semiconductors, displays, transparent electrode and so on. Plasma diagnostics is critical to the uniform process and the product. We use the electron temperature of the various plasma parameters for the diagnosis of plasma. Generally, the range of the electron temperature which is used in a semiconductor process used the range of 1 eV to 10 eV. The difference of electron temperature of 0.5 eV has a influence in plasma process. The electron temperature can be measured by the electrical method and the optical method. Measurement of electron temperature for various gas flow rates was performed in DC-magnetron sputter and Inductively Coupled Plasma. The physical properties of the thin film were also determined by changing electron temperatures. The transmittance was measured using the integrating sphere, and wavelength range was measured at 300 ~ 1100 nm. We obtain the thin film of the mobility, resistivity and carrier concentration using the hall measurement system. As to the electron temperature increase, optical and electrical properties decrease. We determine it was influenced by the oxygen flow ratio and plasma.

• Bulletin of the Korean Chemical Society
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• v.21 no.7
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• pp.720-726
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• 2000

The analytic gradient method for the equation-of-motion coupled-cluster singles and doubles (EOM-CCSD) energy has been extended to employ a reduced molecular orbital (MO) space. Not only the innermost core MOs but also some of the outermost virtua l MOs can be dropped in the reduced MO space, and a substantial amount of computation time can be reduced without deteriorating the results. In order to study the magnitudes and trends of the effects of the dropped MOs, the geometries and vibrational properties of the ground and excited states of BF, CO, CN, N2, AlCl, SiS, P2, BCl, AIF, CS, SiO, PN and GeSe are calculated with different sizes of molecular orbital space. The 6-31 G* and the aug-cc-pVTZ basis sets are employed for all molecules except GeSc for which the 6-311 G* and the TZV+f basis sets are used. It is shown that the magnitudes of the drop-MO effects are about $0.005\AA$ in bond lengths and about 1% on harmonic frequencies and IR intensities provided that the dropped MOs correspond to (1s), (1s,2s,2p), an (1s,2s,2p,3s,3p) atomic orbitals of the first, the second, and the third row atoms, respectively. The geometries and vibrational properties of the first and the second excited states of HCN and HNC are calculated by using a drastically reduced virtual MO space as well as with the well defined frozen core MO space. The results suggest the possibility of using a very smalI MO space for qualitative study of valence excited states.

• The Journal of Engineering Geology
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• v.31 no.1
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• pp.55-66
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• 2021

Hydraulic-mechanical (H-M) coupled numerical modeling was used to evaluate the evolution of hydrogeological properties in response to the installation and expansion of a borehole. A domain with a discrete fracture network was adopted for discontinuum modeling to simulate changes in fracture apertures. Comparison with real hydraulic test data shows that the effects of principal stress direction and expansion of borehole diameter were reasonably simulated by H-M coupled numerical modeling. The modeling confirmed that aperture changes depended on the principal stress direction, with an increase in aperture size due to vertical displacement being the dominant effect. A concentration of shear dilation around the borehole had an additional, subsidiary, effect on the hydrogeological evolution. These results show that the permeability of fractured rock can be increased by changing the hydraulic properties of a fracture through stress redistribution caused by the installation and expansion of a borehole.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 1999.10a
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• pp.59-59
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• 1999

In this study, planer inductively coupled $Cl_2$ based plasmas were used to etch InGaN and the effects of plasma conditions on the InGaN etch properties have been characterized using quadrupole mass spectrometry(QMS) and optical emission spectroscopy(OES). As process conditions used to study the effects of plasma characteristics on the InGaN etch properties, $Cl_2$ was used as the main etch gas and $CHF_3,{\;}CH_4$, and Ar were used as additive gases. Operational pressure was varied from SmTorr to 3OmTorr, inductive power and bias voltage were varied from 400W to 800W and -50V to -250V, respectively while the substrate temperature was fixed at 50 centigrade. For the $Cl_2$ plasmas, selective etching of GaN to InGaN was obtained regardless of plasma conditions. The small addition of $CHF_3$ or Ar to $Cl_2$ and the decrease of pressure generally increased InGaN etch rates. The selective etching of InGaN to GaN could be obtained by the reduction of pressure to l5mTorr in $CI_2/IO%CHF_3{\;}or{\;}CI_2/IO%Ar$ plasma. The enhancement of InGaN etch rates was related to the ion bombardment for $CI_2/Ar$ plasmas and the formation of $CH_x$ radicals for $CI_2/CHF_3(CH_4)$ plasmas.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.9 s.351
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• pp.64-68
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• 2006

Novel system-on-package (SOP) - D technology to improve the mechanical and thermal properties of a MCM-D substrate was suggested. Based on this investigation, the two types of band pass filters for the V-band application with unique structure were designed and implemented using 2-metals, 3-BCB layers. The first type using distributed resonator had the insertion loss below 2.6 dB at 55 GHz and group delay was below 0.06 ns. For the second type with edge coupled structure, the insertion loss and group delay were 3 dB and 0.1 ns, respectively. Suggested MCM-D substrate with band pass filter can be used to evaluate mm-Wave system including flip-chip bonded MMIC.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.136.2-136.2
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• 2015

반도체 제조는 chip의 성능 향상 및 단가 하락을 위해 지속적으로 pattern size가 nano size로 감소해 왔고, capacitor 용량은 증가해 왔다. 이러한 현상은 contact hole의 aspect ratio를 지속적으로 증가시킨바, 그에 따라 최적의 HARC (high aspect ratio contact)을 확보하는 적합한 dry etch process가 필수적이다. 그러나 HARC dry etch process는 많은 critical plasma properties 에 의존하는 매우 복잡한 공정이다. 따라서, critical plasma properties를 적절히 조절하여 higher aspect ratio, higher etch selectivity, tighter critical dimension control, lower P2ID과 같은 plasma characteristics을 확보하는 것이 요구된다. 현재 critical plasma properties를 제어하기 위해 다양한 plasma etching 방법이 연구 되어왔다. 이 중 plasma를 낮은 kHz의 frequency에서 on/off 하는 pulsed plasma etching technique은 nanoscale semiconductor material의 etch 특성을 효과적으로 향상 시킬 수 있다. 따라서 본 실험에서는 dual-frequency capacitive coupled plasma (DF-CCP)을 사용하여 plasma operation 동안 duty ratio와 pulse frequency와 같은 pulse parameters를 적용하여 plasma의 특성을 각각 제어함으로써 etch selectivity와 uniformity를 향상 시키고자 하였다. Selective SiO2 contact etching을 위해 top electrode에는 60 MHz pulsed RF source power를, bottom electrode에는 2MHz pulse plasma를 인가하여 synchronously pulsed dual-frequency capacitive coupled plasma (DF-CCP)에서의 plasma 특성과 dual pulsed plasma의 sync. pulsing duty ratio의 영향에 따른 etching 특성 등을 연구 진행하였다. 또한 emissive probe를 통해 전자온도, OES를 통한 radical 분석으로 critical Plasma properties를 분석하였고 SEM을 통한 etch 특성분석과 XPS를 통한 표면분석도 함께 진행하였다. 그 결과 60%의 source duty percentage와 50%의 bias duty percentage에서 가장 향상된 etch 특성을 얻을 수 있었다.

• Journal of the Korean Vacuum Society
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• v.10 no.1
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• pp.112-118
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• 2001

Magnetic field is commonly used in low temperature processing plasmas to enhance the performance of the plasma reactors. E$\times$B magnetron or surface multipole configuration is the most popular. However, the properties of capacitively coupled rf plasma confined by axial static magnetic field have rarely been studied. With these background, the effect of magnetic field on the characteristics of capacitively coupled 13.56 MHz/40 KHz argon plasma was studied, Ion saturation current, electron temperature and plasma potential were measured by Langmuir probe and emissive probe. At low pressure region (~10 mTorr), ion current increases by a factor of 3-4 due to reduction of diffusion loss of charged particles to the wall. Electron temperature slightly increases with magnetic field for 13.56 MHz discharge. However, for 40 KHz discharge, electron temperature decreased from 1.8 eV to 0.8 eV with magnetic field. It was observed that the magnetic field induces large temporal variation of the plasma potential. Particle in cell simulation was performed to examine the behaviors of the space potential. Experimental and simulation results agreed qualitatively.

• Korean Chemical Engineering Research
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• v.48 no.3
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• pp.355-358
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• 2010

Inductively coupled low temperature plasmas with oxygen, argon, mixture of oxygen and argon, and nitrogen have been used to modify polycarbonate(PC) films at the various process conditions. All plasma treatments generally had a tendency to increase the surface roughness of PC regardless of process conditions. The treatment of oxygen plasma showed the highest value in the surface roughness and mostly enhanced the generation of oxygen containing polar groups as much as 43% in comparison of untreated PC. The contact angle of untreated PC decreased from $82.31^{\circ}$ to the lowest value of $9.17^{\circ}$ after oxygen plasma treatment. The increase of RF delivered power had an effect on the rapid reduction of contact angle, but gas flow rates did not effect to reduce contact angles so much.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.21 no.12
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• pp.3205-3214
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• 1996

In this paper, the microstrip phased array antennas with coupling-slots for the base station of mobile communication is proposed and anlyzed with accurate analysis method which is based on both reciprocity principle and full-wave analysis. The basis functions used for the numerical analysis are determined depending upon the accuracy, convergence properties of the solution, and the computation time. The patch uses 3 EB mode and the slot uses IPWS mode. The designed phased array antenna has 8 slot-coupled microstrip patch array elements and the beam scanning capability is obtained by using the 4-bit PIN-diode phase shifters as switching devices which are consisted of the loaded line phase shifters for 30.deg. and 60.deg. and the reflection type phase shifters for 90.deg. and 180.deg. repectively. The 4-bits phase shifters which aremade by connecting each phase shifter have about 2.deg.-3.deg. phase errors and their insertion loss are about 3dB for each phase state. The fabricated 8-element phased array antenna with 4-bits phase shifters provides 12.deg.-14.deg. beamwidths depending on the scanning angle and is capable of scanning its beam to .+-.45.deg. with 9.deg. intervals, and the gain 12dBi. The overall results show that the slot-coupled phased array antenna has great advantages of wideband, high gain and reduced spurious radiation. Also, the antenna can be made small and thin. Furthermore, the scanning property of this antenna allows for its application in several areas, such as mobile communication system and PCS.