• Transactions of Materials Processing
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• v.8 no.5
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• pp.498-506
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• 1999

The metal forming processes of aluminum alloy wheel forging at elevated temperature are analyzed by the finite element method. A coupled thermo-mechanical model for analysis of plastic deformation and geat transfer is adapted in the finite element formulation. In order to consider the strain-rate effects on material properties and the flow stress dependence on temperatures, rigid-viscoplasticity is introduced in this formation. In this paper, several process conditions were applied to the dimulation such as die speed, rib thickness, and depth of die cavity. Simulation results are compared, and discussed with each case. Metal flow, die pressure distributions, temperature distributions, velocity fields and forging loads are summarized as basic data for process design and selection of a proper press equipment.

• Proceedings of the KWS Conference
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• 2005.11a
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• pp.126-128
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• 2005

This paper presents a 3-D finite element analysis of a magneto-thermal coupled problem with moving conductor. In the magnetic and thermal analyses, temperature-dependent magnetic and thermal material properties were considered. Transient finite element method for analysis of moving conductor needs many number of elements and much time to make calculation. Therefore, in this paper, finite element formulation derived from quasi-state is adopted. Finite element results were compared with the experimental results. The results demonstrate that this approach is suitable to solve the magneto-thermal coupled problem.

• Journal of Surface Science and Engineering
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• v.32 no.2
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• pp.83-92
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• 1999

GaN etching was performed using planar inductively coupled $Cl_2$-based plasmas and the effects of main process parameters on the characteristics of the plasmas and their relations to GaN etch rates were studied. Also, the GaN etch mechanism was investigated using a Langmuir probe and optical emission spectroscopy (OES) during the etching, and X-ray photoelectron spectroscopy (XPS) of the etched surfaces. The GaN etch rates increased with the increase of chlorine radical density and ion energy, and a vertical etch profile haying the etch rate close to 4000 $\AA$/min could be obtained. The addition of 10% Ar to $Cl_2$ gas increased the GaN etch rate and the addition of Ar (more than 20%) and HBr generally reduced the GaN etch rate. The GaN etch rate appeared to be more affected by the chemical reaction between Cl radicals and GaN compared to the physical sputtering itself under the sufficient ion bombardments to break GaN bonds.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.513-514
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• 2005

In plasma processing reactors, it is common practice to control plasma density and ion bombardment energy by manipulating excitation voltage and frequency. In this paper, a dually excited capacitively coupled rf plasma reactor is self-consistently simulated with a three moment model. Effects of phase differences between primary and secondary voltage waves, simultaneously modulated at various combination of commensurate frequencies, on plasma properties are investigated. The simulation results show that plasma potential and density as well as primary self-dc bias are nearly unaffected by the phase lag between the primary and the secondary voltage waves. The results also show that, with the secondary frequency substantially lower than the primary frequency, secondary self-dc bias remains constant regardless of the phase lag. As the secondary frequency approaches to the primary frequency, however, the secondary self-dc bias becomes greatly altered by the phase lag, and so does the ion bombardment energy at the secondary electrode. These results demonstrate that ion bombardment energy can be more carefully controlled through plasma simulation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.8
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• pp.622-628
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• 2001

We developed 1- and 2-dimensional fluid model for the analysis of a capacitively coupled Ar RF(Radio Frequency) glow discharge. This discharge is in pure Ar gas at the pressure 100[mTorr], frequency 13.56[MHz] and voltage amplitude 120[V}. This model is based on the equations of continuity and electron energy conservation coupled with Poison equation. 2-dimensional model is simulated on the condition of GEC(Gaseous Electronic Conference cell). The geometry of the discharge chamber and the electrodes used in the model is cylindrically simmetric; tow cylinders for the electrodes are surrounded by the grounded chamber. It is shown that 1-dimensional model is very useful on the understanding of RF glow discharge property and of the movement of charged particles. 2-dimensional model predicts off-axis maximum structure as in the experiments and has the results in qualitatively and quantitatively good agreement with the experiments. Effects of dc self-bias voltage, guard ring and reactor geometry is discussed.

• International Journal of Aerospace System Engineering
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• v.6 no.2
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• pp.1-10
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• 2019

In this paper, the probabilistic free vibration analysis of a geometrically coupled cantilever wing with uncertain material properties is carried out using stochastic finite element (SFEM) based on first order perturbation technique. Here, both stiffness and damping of the system are considered as random parameters. The bending and torsional rigidities are assumed as spatially varying second order Gaussian random fields and represented by Karhunen Loeve (K-L) expansion. Here, the expected value, standard deviation, and probability distribution of random natural frequencies and damping ratios are computed. The results obtained from the present approach are also compared with Monte Carlo simulations (MCS). The results show that the uncertain bending rigidity has more influence on the damping ratio and frequency of modes 1 and 3 while uncertain torsional rigidity has more influence on the damping ratio and frequency of modes 2 and 3.

• Journal of the Optical Society of Korea
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• v.18 no.2
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• pp.180-183
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• 2014

The surface of semiconductor solar cells, such as a-Si or CIGS (CuInGaSe) solar cells is not flat but textured in the microscopic domain. With textured surfaces, the optical reflectivity of a solar cell is different from that of flat surfaces in the wavelength region. In this paper, the effects of a textured surface on a CIGS solar cell are presented by RCWA (Rigorous Coupled Wave Analysis) method. The effect of incoherent light is also considered by RCWA with a Fourier analysis while conventional optical simulation uses the input light on the solar cell as coherent light. Using experimental results, the author showed that the RCWA method with a Fourier analysis is a proper method to simulate the optical properties of CIGS solar cells.

• Journal of Surface Science and Engineering
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• v.37 no.3
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• pp.164-168
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• 2004

Polycrystalline silicon thin films were deposited by inductively coupled plasma (ICP) assisted magnetron sputtering using a gas mixture of Ar and $H_2$ on a glass substrate at $250^{\circ}C$. At constant Ar mass flow rate of 10 sccm, the working pressure was changed between 10mTorr and 70mTorr with changing $H_2$ flow rate. The effects of RF power applied to ICP coil and $Ar/H_2$ gas mixing ratio on the properties of the deposited Si films were investigated. The crystallinity was evaluated by both X-ray diffraction and Raman spectroscopy. From the results of Raman spectroscopy, the crystallinity was improved as hydrogen mixing ratio was increased up to$ Ar/H_2$=10/16 sccm; the maximum crystalline fraction was 74% at this condition. When RF power applied to ICP coil was increased, the crystallinity was also increased around 78%. In order to investigate the surface roughness of the deposited films, Atomic Force Microscopy was used.

• Journal of the Korean Vacuum Society
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• v.7 no.s1
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• pp.134-139
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• 1998

Amorphous fluorocarbon (a-C:F) is of interest for low dielectric interlayer material, but in this work we applied this material to FED field emitter. N-doped a-C:F films were deposited by inductively coupled plasma chemical vapor deposition (ICPCVD). The Raman spectra were measured to study the film structure and inter-band optical absorption coefficients were measured using Perkin-Elmer UV-VIS-IR spectrophotometer and optical band gap was obtained using Tauc's plot. XPS spectrum and AFM image were investigated to study bond structure and surface morphology. Current-electric field(I-E) characteristic of the film was measured for the characterization of electron emission properties. The optimum doping concentration was found to be [N2]/[CF4]=9% in the gas phase. The turn-on field and the emission current density at $[N_2]/[CF_4]$=9% were found to be 7.34V/$\mu\textrm{m}$ and 16 $\mu\textrm{A}/\textrm{cm}^2$ at 12.8V/$\mu\textrm{m}$, respectively.

• Proceedings of the Korean Geotechical Society Conference
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• 2009.09a
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• pp.1346-1353
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• 2009

In this study, a numerical study was carried out to simulate the expansion of ground borehole by pulse discharge technology using finite element analysis. Considering the mortar in the borehole as an acoustic medium and the surrounding soil as an elasto-plastic material, the strong shock wave developed by the pulse discharge was modeled using the underwater explosion model. The ground expansion was simulated based on a coupled acoustic-structural analysis with varying properties of mortar and soil, and the behavior between acoustic-structural interface.