• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.7-8
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• 2009

In the presence of infrared light, a CMOS Readout IC (ROIC) for a microbolometer typed infrared sensor detects the voltage or current that is caused by the changing in resistance in the bolometer sensor. A serious problem in designing the ROIC is how the value of the bolometer and reference resistors vary because of variations in manufacturing process. Since different pixel have different, resistance values, sensor operations must contend with fixed pattern noise (FPN) problems. In this paper, we propose a novel technique to compensate for the fluctuation in reference resistance by tiling into account the process variation. By using constant current source basing and correlated double sampling, we solved FPN.

• 센서학회지
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• 제21권1호
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• pp.7-12
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• 2012

In this paper, we propose a 4-transistor active pixel sensor(APS) with a novel correlated double sampling(CDS) circuit for the purpose of extending dynamic range. Dual sampling techniques can overcome low-sensitivity and temporal disparity problems at low illumination. To accomplish this, two images are obtained at the same time using different sensitivities. The novel CDS circuit proposed in this paper contains MOS switches that make it possible for the capacitance of a conventional CDS circuit to function as a charge pump, so that the proposed APS exhibits an extended dynamic range as well as reduced noise. The designed circuit was fabricated by using $0.35{\mu}m$ 2-poly 4-metal standard CMOS technology and its characteristics have been evaluated.

• JSTS:Journal of Semiconductor Technology and Science
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• 제12권4호
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• pp.388-396
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• 2012

In this paper, a $320{\times}240$ pixel, 80 frame/s CMOS image sensor with a low power dual correlated double sampling (CDS) scheme is presented. A novel 8-bit hold-and-go counter in each column is proposed to obtain 10-bit resolution. Furthermore, dual CDS and a configurable counter scheme are also discussed to realize efficient power reduction. With these techniques, the digital counter consumes at least 43% and at most 61% less power compared with the column-counters type, and the frame rate is approximately 40% faster than the double memory type due to a partial pipeline structure without additional memories. The prototype sensor was fabricated in a Samsung $0.13{\mu}m$ 1P4M CMOS process and used a 4T APS with a pixel pitch of $2.25{\mu}m$. The measured column fixed pattern noise (FPN) is 0.10 LSB.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권2호
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• pp.246-251
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• 2014

In this paper, a high-speed CMOS Image Sensor (CIS) based on a 10-bit two step Single Slope A/D Converter (SS-ADC) is proposed. The A/D converter is composed of both 5-bit coarse ADC and a 6-bit fine ADC, and the conversion speed is 10 times faster than that of the single-slope A/D convertor. In order to reduce the pixel noise, further, a Hybrid Correlated Double Sampling (H-CDS) is also discussed. The proposed A/D converter has been fabricated with 0.13um 1-poly 4-metal CIS process, and it has a QVGA ($320{\times}240$) resolution. The fabricated chip size is $5mm{\times}3mm$, and the power consumption is about 35 mW at 3.3 V supply voltage. The measured conversion speed is 10 us, and the frame rate is 220 frames/s.

• 전자공학회논문지
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• 제50권11호
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• pp.64-69
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• 2013

본 논문에서는 10-bit 해상도의 Two-Step Single-Slope A/D 변환기를 이용한 고속 CMOS Image Sensor(CIS)를 제안하였다. 제안하는 A/D 변환기는 5-bit coarse ADC 와 6-bit fine ADC 로 구성되어 있으며, 기존의 Single-Slope A/D 변환기보다 10배 이상의 변환속도를 나타내었다. 또한 고속 동작에서 적은 노이즈 특성을 갖기 위해 Digital Correlated Double Sampling(D-CDS) 회로를 제안하였다. 설계된 A/D 변환기는 0.13um 1-poly 4-metal CIS 공정으로 제작되었으며 QVGA($320{\times}240$)급 해상도를 갖는다. 제작된 칩의 유효면적은 $5mm{\times}3mm$ 이며 3.3V 전원전압에서 약 35mW의 전력소모를 나타내었다. 변환속도는 10us 이었으며, 프레임율은 220 frames/s으로 측정되었다.

• 센서학회지
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• 제26권1호
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• pp.60-65
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• 2017

This paper describes the low noise and low power IC using the opamp sharing technique for the capacitive micro-sensor sensing platform. The proposed IC reduces noise using correlated double sampling (CDS) and reduces power consumption using the opamp sharing technique. The IC is designed to be fully programmable, and can be digitally controlled by serial peripheral interface (SPI). The power consumption and the integrated input referred noise are 1.02 mW from a 3.3 V supply voltage and $0.164aF_{RMS}$ with a bandwidth of 400 Hz. The capacitive sensitivity, the input-output linearity and the figure of merits (FoM) are 2.5 mV/fF, 2.46 %FSO, and 8.4, respectively.

• JSTS:Journal of Semiconductor Technology and Science
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• 제12권3호
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• pp.278-285
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• 2012

A digital readout IC for capacitive sensors is presented. Digital capacitance readout circuits suffer from static capacitance of sensors, especially single-ended sensors, and require large passive elements to cancel such DC offset signal. For this reason, to maximize a dynamic range with a small die area, the proposed circuit features digital filters having a coarse and fine compensation steps. Moreover, by employing switched-capacitor circuit for the front-end, correlated double sampling (CDS) technique can be adopted to minimize low-frequency device noise. The proposed circuit targeted 8-kHz signal bandwidth and oversampling ratio (OSR) of 64, thus a $3^{rd}$-order ${\Delta}{\Sigma}$ modulator operating at 1 MH was used for pulse-density-modulated (PDM) output. The proposed IC was designed in a 0.18-${\mu}m$ CMOS mixed-mode process, and occupied $0.86{\times}1.33mm^2$. The measurement results shows suppressed DC power under about -30 dBFS with minimized device flicker noise.

• JSTS:Journal of Semiconductor Technology and Science
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• 제15권3호
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• pp.349-355
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• 2015

A fully-differential touch-screen sensing architecture is presented to improve noise immunity and also support most multi-touch events minimizing the number of amplifiers and their silicon area. A correlated double sampling function is incorporated to reduce DC offset and low-frequency noises, and a stabilizer circuit is also embedded to minimize inherent transient fluctuations. A prototype of the proposed readout circuit was fabricated in a $0.18{\mu}m$ CMOS process and its differential operation in response to various touch events was experimentally verified. With a 3.3 V supply, the current dissipation was 3.4 mA at normal operation and $140{\mu}A$ in standby mode.

• 대한전자공학회논문지SD
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• 제46권1호
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• pp.45-51
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• 2009

심장박동 조절장치를 위한 저전압 저전력 전단 처리기를 제안한다. 제안된 회로는 80 Hz에서 120 Hz의 대역폭을 가지는 4차의 스위치드 커패시터 필터와 0 dB에서 24 dB까지 0.094 dB 간격으로 전압이득의 조절이 가능한 전압증폭기를 구현하였다. 낮은 전압에서 동작하고, 전력소모를 극소화하기 위해서 인버터 기반의 스위치드 커패시터 회로를 사용하였으며, 인버터가 가지는 작은 전압이득을 보상하기 위해서 상호상관 기법을 사용하였다. 제안된 회로는 $0.35-{\mu}m$ CMOS 공정을 이용하여 구현되었으며, 5kHz의 샘플링 주파수에서 80-dB의 SFDR을 가진다. 이때 전력소모는 1 V의 전원전압에서 330 nW에 불과하다.

• 센서학회지
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• 제11권5호
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• pp.255-262
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• 2002

인간의 망막은 효율적으로 주어진 물체의 윤곽을 검출할 수 있다. 본 연구에서는 윤곽검출에 관여하는 망막 세포의 기능을 전자회로로 모델링하여 윤곽검출기능을 가지는 CMOS 시각칩을 설계하였다. CMOS 제조공정 중에는 여러 가지 요인에 의해 MOSFET의 특성이 변화할 수 있으며, 특히 어레이로 구성되어 각 픽셀의 신호를 출력하는 readout 회로에서의 특성변화는 출력옵셋으로 나타난다. 하드웨어로 입력영상의 윤곽을 검출하는 시각칩은 다른 응용시스템의 입력단에 사용되므로 이러한 옵셋은 전체 시스템의 성능을 결정하는 중요한 요소이다. 본 연구에서는 이와 같은 출력단의 옵셋을 제거하기 위해 CDS(Correlated Double Sampling) 회로를 이용한 윤곽 검출용 시각칩을 설계하였다. 설계된 시각칩은 CMOS 표준공정을 이용하여 다른 회로와 집적화가 가능하며, 기존의 시각칩보다 신뢰성 있는 출력특성을 나타냄으로써, 물체의 윤곽을 이용하는 물체추적, 지문인식, 인간 친화적 로봇시스템등의 다양한 응용 시스템의 입력단으로 적용될 수 있을 것이다.