• Journal of Adhesion and Interface
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• v.8 no.3
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• pp.28-33
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• 2007

• Proceedings of the Korean Vacuum Society Conference
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• 2004.08a
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• pp.114-114
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• 2004

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.795-798
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• 2004

After showing 32 inch two-dimensionally integrated fluorescent lamp (TIFL) and its module at SID '04, 40 inch TIFL and its module of prototype have been developed at the first time. It is the biggest size in the world as well as has a backlight unit without BEF optical film. The luminance of TIFL is 14000 nit at 190 watt power consumption and its luminous efficacy is 51 lumen/watt. The use of TIFL simplifies backlight assembly process and removes high price optical sheets. As a result, LCD TV, used by TIFL, is rapidly going to expand its market share in the large size TV area.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.832-835
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• 2005

Organosilicate Glass has quite a long history in the Semiconductor industry but has received very limited evaluation for Display industry applications. In this paper, we would like to introduce several kinds of Organosilicate Glasses for Display applications.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.452-455
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• 2007

This paper provides an overview on the characteristics of a-SiC:H barrier film deposited for flexible display applications. Key characteristics such as high crack resistance, high thermal/hydro stability, excellent adhesion to the polymer substrate, as well as very low permeance has been demonstrated. The excellence of this barrier film has been shown from competitive analysis compared with other barrier coating materials. Finally, flexible Polymer Light Emitting Diode (PLED) test pixels have been fabricated on the barrier coated plastic substrate, demonstrating the viability of the device with lifetime data.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.12-13
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• 2006

$Ga_2O_3$ is associated with the fabrication of thin window layer of solar cell. Usually, $Ga_2O_3$ is synthesized from Ga-metal oxidation method and GaN mono-crystal heat treatment method. We synthesized $Ga_2O_3$ powder using two methods and analyzed powder using latter method compared with powder by former method. XPS, XRD, IR analysis are conducted. XPS result, surface of GaN powder is almost oxidized to $Ga_2O_3$ at $1124^{\circ}C$ heat treatment and XRD and IR result, the inside of GaN powder is dramatically oxidized at $1124^{\circ}C{\sim}1300^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.263-266
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• 2000

Effects of excess Pb(50 mole ％) on the crystallization properties of amorphous PZT thin films on the glass substrates by post-annealing in oxygen ambient were investigated to lower the crystallization temperature of the PZT thin films with a single perovskite phase. The PZT thin films(350nm) were prepared on Pt/Ti/corning glass(1737) substrates. The PZT thin films and bottom electrode were deposited by RF magnetron sputtering. Crystallization properties of PZT thin films were strongly dependent on RTA(Rapid Thermal Annealing) temperature. We were able to obtain a perovskite structure of PZT at 600$^{\circ}C$ for 10min. After thermal treatments were done, electrical properties such as I-V, P-E, and fatigue were measured.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.198-198
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• 2006

Tin doped $In_2O_3$ sputtering target is widely used to produce a various kinds of flat panel display because of high transmittance in visible region and high electrical conductivity. In2O3 and SnO2 powders were prepared by a homogeneous precipitation method using metal source, respectively, the calcining and sintering behavior of the indium-tin oxide(In2O3-SnO2) composite powders were studied. The tin oxide(SnO2) dispersion condition in ITO sputtering target was improved by increasing calcining temperature. And the tin oxide dispersion was also improved by reducing the tin oxide contents in the ITO target from 30 to 5wt%. SnO2 dispersion and densification of ITO target is very difficult to control due to sublimation of SnO2 at over 1150C.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.14-14
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• 2006

Homoepitaxial growth of GaN on n-type GaN substrates was carried out by hydride vapor phase epitaxy (HVPE) method. This enables us to reduce or to eliminate the bowing of the GaN substrate caused by thermal mismatch. As a result, the two opposite crystal surfaces have been found to possess low dislocation density. The surface polarity of the homoepitaxially grown GaN was confirmed by both etching of the surface and conversion beam electron diffraction(CBED). The surface morphology and the photoluminescencemeasurement indicated that the surface properties of N-polar face of the homoepitaxlally grown GaN are quite different from the initial N-polar face of the heteroepitaxially grown GaN substrate Also, both surfaces of the GaN substrate were characterized by room temperature Double crystal X-ray diffraction (DCXRD) and photoluminescence measurement.

• 방재와보험
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• s.142
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• pp.36-39
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• 2011