• 제목/요약/키워드: copper layer

검색결과 661건 처리시간 0.04초

Spatial Pattern of Copper Phosphate Precipitation Involves in Copper Accumulation and Resistance of Unsaturated Pseudomonas putida CZ1 Biofilm

  • Chen, Guangcun;Lin, Huirong;Chen, Xincai
    • Journal of Microbiology and Biotechnology
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    • 제26권12호
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    • pp.2116-2126
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    • 2016
  • Bacterial biofilms are spatially structured communities that contain bacterial cells with a wide range of physiological states. The spatial distribution and speciation of copper in unsaturated Pseudomonas putida CZ1 biofilms that accumulated 147.0 mg copper per g dry weight were determined by transmission electron microscopy coupled with energy dispersive X-ray analysis, and micro-X-ray fluorescence microscopy coupled with micro-X-ray absorption near edge structure (micro-XANES) analysis. It was found that copper was mainly precipitated in a $75{\mu}m$ thick layer as copper phosphate in the middle of the biofilm, while there were two living cell layers in the air-biofilm and biofilm-medium interfaces, respectively, distinguished from the copper precipitation layer by two interfaces. The X-ray absorption fine structure analysis of biofilm revealed that species resembling $Cu_3(PO_4)_2$ predominated in biofilm, followed by Cu-Citrate- and Cu-Glutathione-like species. Further analysis by micro-XANES revealed that 94.4% of copper were $Cu_3(PO_4)_2$-like species in the layer next to the air interface, whereas the copper species of the layer next to the medium interface were composed by 75.4% $Cu_3(PO_4)_2$, 10.9% Cu-Citrate-like species, and 11.2% Cu-Glutathione-like species. Thereby, it was suggested that copper was initially acquired by cells in the biofilm-air interface as a citrate complex, and then transported out and bound by out membranes of cells, released from the copper-bound membranes, and finally precipitated with phosphate in the extracellular matrix of the biofilm. These results revealed a clear spatial pattern of copper precipitation in unsaturated biofilm, which was responsible for the high copper tolerance and accumulation of the biofilm.

UV 펄스 레이저 가공의 구리 박막 두께에 따른 열-구조 연성 해석 (Coupled Thermal-Structure Analysis of UV Laser Pulsing according to the Thickness of Copper Film on the Surface of Polyimide)

  • 신민재;신보성
    • 한국레이저가공학회지
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    • 제16권2호
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    • pp.7-11
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    • 2013
  • Recently advanced laser processing is widely introduced to improve the efficiency of micro part production and to reduce the rate of inferior goods. In this paper the trend of delamination of single layer with both thin copper and polyimide according to the variation of copper thickness was investigated using the coupled thermal-structural analysis of ANSYS. From these analyses results, some conclusions were obtained. Firstly, the maximum temperature was increasing with respect to decrease of copper thickness. Secondly the maximum strain which was in general estimation the main effect of the delamination was observed in case of the copper thickness of $5{\mu}m$. Finally the trend of the delamination was decreasing with increasing the thickness of copper layer.

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태양열 집열기에 사용되는 구리-유리관 접합기구 (Bonding Mechanism of Direct Copper to Glass Seal in an Evacuated Tube Solar Collector)

  • 김철영;남명식;곽희열
    • 한국세라믹학회지
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    • 제38권11호
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    • pp.1000-1007
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    • 2001
  • 진공관형 태양열 집열기에서는 열관(heat pipe)과 붕규산염 유리관의 안정된 접합이 이를 장시간 사용하는데 매우 중요하다. 구리와 유리는 그 물리.화학적 성질에 큰 차이가 있어 접합하기가 어려움으로 구리관 표면에 유리와 화학적 결합이 용이한 산화막을 생성시켜 접합하도록 구리의 산화상태, 접합계면 및 접합강도를 XRD, SEM, EDS 및 인정시험기로 측정하였다. 순수 구리는 $600^{\circ}C$ 이하로 열처리하였을 때 Cu$_2$O 산화막을 생성하였으나 그 이상의 온도에서는 CuO 산화막을 형성하였으며 후자의 산화막은 구리와의 접합력이 매우 불량하였다. 그러나 붕사로 표면 처리를 하였을 경우에는 80$0^{\circ}C$에서도 Cu$_2$O 산화막 만이 발견되었다. Cu$_2$O 산화막을 생성시킨 구리관과 붕규산염 유리관을 Housekeeper법으로 접합하였을 경우 354.4N의 접합강도를 얻을 수 있었으며 열충격 저항성도 매우 뛰어났다.

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Seed 금속의 종류와 두께에 따른 구리 전착층의 표면형상에 미치는 영향 (Effect of Kind and Thickness of Seed Metal on the Surface Morphology of Copper Foil)

  • 우태규;박일송;설경원
    • 한국재료학회지
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    • 제17권5호
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    • pp.283-288
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    • 2007
  • This study aimed to investigate the effects of the seed layer with copper electroplating on the surface morphology of copper foil. Three kinds of seed metal such as platinum, palladium, Pt-Pd alloy were used in this study. Electrodeposition was carried out with the constant current density of 200 $mA/cm^2$ for 68 seconds. Electrochemical experiments, in conjunction with SEM, XRD, AFM and four-point probe, were performed to characterize the morphology and mechanical characteristics of copper foil. Large particles were observed on the surface of the copper deposition layer when a copper foil was electroplated on the 130 nm thickness of Pd, Pt-Pd seed layer. However, a homogeneous surface, low resistivity was obtained when the 260 nm thickness of Pt, Pt-Pd alloy seed layer was used. The minimum value of resistivity was 2.216 ${\mu}{\Omega}-cm$ at the 260 nm thickness of Pt-Pd seed layer.

구리기둥범프 용 전해도금 층 제어 (Thickness Control of Electroplating Layer for Copper Pillar Tin Bump)

  • 문대호;홍상진;박종대;황재룡;소대화
    • 한국정보통신학회:학술대회논문집
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    • 한국해양정보통신학회 2011년도 추계학술대회
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    • pp.903-906
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    • 2011
  • 고밀도집적을 위한 구리기둥주석범프(CPTB)의 제작공정에 흔히 전기도금과 무전해도금이 적용된다. CPTB는 약 $100{\mu}m$ 정도의 피치를 갖도록 먼저 구리도금 층을 전착시킨 다음, 구리의 산화 억제를 위하여 구리기둥 주위에 주석을 입혀 제작한다. 이 과정에서 구리도금 층 두께를 균일하게 형성하는 일은 매우 민감하고 어렵지만 중요한 일이다. 이를 위하여 구리도금 전극 사이에 전류분포 제어를 위한 절연 막(절연게이트)을 형성하여 도금 층의 두께분포를 조절하는 실험을 하였다. 원통형 도금 조에서 중심부를 열어 전류를 흘려주고, 그 외 부분은 가장자리 끝까지 막고 전류를 차단하여 두께분포 변화를 확인하였다.

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산성황산동 용액 내에서 동판위에 녹청 형성에 관한 기초적 조사 (An Investigation on the Patination of Copper in Acidic Copper Sulfate Solution)

  • 윤승열
    • 한국표면공학회지
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    • 제5권3호
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    • pp.77-85
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    • 1972
  • A method of preparation of synthetic ignorgaic coating on copper (patina) has been presented . An Eh--pH diagram was constructed for the present Cu-H2O-SO$_4$ system using the most recently available thermodynamic data. In the path of the patination at room temperature the general behaviour of copper in acidic copper sulfate solutions with potassium chlorate as an oxidizing agent appeared to follow those predictable in this Eh-pH diagram. In the presence 0.05 molar cupric sulfate at a temperature of about 28$^{\circ}C$ a green brochantite (CuSO$_4$$.$3Cu(OH)$_2$) layer was formed on copper sheet in 20 days. In a solution having an initial pH of 3.5 the development of a brochantite coating has been observed to take place in two stages. In the first, a layer of cuprous oxide formed on the copper at a relatively rapid rate. In the ensuing step the outer layer of cuptrite was oxidized at much slower rate to form brochantite. The syntetic coatings appeared to consist of crystal-lites of brochanitite growing perpendicular to the cuprose oxide surface. The outer tips of the -crystallites were reasily broken off and gave to the layer a rather chalky character. Underneath, at the brochantite Cu$_2$O interface, however, the green layers were firmely attached. The effect of reagent concentration , solution agitation , and moderate temperature increase were investigated to improve the quality of coating. So also in a qualitative way were the effect of light.

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화학 동도금을 이용한 캐리어 극박 동박 표면 특성 평가에 관한 연구 (An evaluation method on the surface characteristics of ultra-thin copper foil using chemical copper plating)

  • 허진영;이홍기;구석본;전준미;김익범
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2014년도 추계학술대회 논문집
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    • pp.129-129
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    • 2014
  • 본 연구는 알루미늄 및 구리 캐리어 소재상에 화학 동도금(Chemical Copper)으로 형성된 극박 동박 표면 및 석출막의 특성 평가에 관한 연구이다. 평가에 사용된 극박 동박은 현재 캐리어박 선점률이 높은 M, J, Y사의 제품이다. 최상층 구리 표면에서 조직, 조성, 표면조도를 평가하였고, 단면 평가에서는 copper layer 및 nodule layer, adhesion layer, anti-corrosion layer, release layer, substrate에서의 물성 및 특성을 평가하였다.

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알루미나(Al$_2$O$_3$) 세라믹 표면의 강메탈라이징법에 관한 연구 (A Study on the Copper Metallizing Method of $Al_2$O$_3$ Ceramic Surface)

  • 최영국;김정관
    • Journal of Welding and Joining
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    • 제13권3호
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    • pp.55-64
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    • 1995
  • Metallizing method on ceramic surface is one of the compositing technology of ceramics and metal. The purpose of this study is to make HIC (Hybrid Intergrated Circuit) with copper metallizing method of which copper layer is formed on ceramic substrate by firing in atmosphere in lieu of conventional hybrid microcircuit systems based on noble metal. Metallizing pastes were made from various copper compounds such as Cu$_{2}$O, CuO, Cu, CuS and kaolin. And the screen printing method was used. The characteristics of metallized copper layers were analyzed through the measurement of sheet resistance, SEM, and EDZX. The results obtainted are summarized as follows; 1. The copper metallizing layers on ceramic surface can be formed by firing in air. 2. The metallized layer using Cu$_{2}$O paste showed the smallest sheet resistance among a group of copper chemical compounds. And optimum metallizing conditions are 15 minutes of firing time, 1000.deg.C of firig temperature, and 3 minutes of deoxidation time. 3. The results of EDAX analysis showed mutual diffusion of Cu and Al. 4. The kaolin plays a important role of deepening the penetration of Cu to $Al_{2}$O$_{3}$ ceramics. But if the kaolin content is too much, sheet resistance increases and copper metallizing layer becomes brittle.

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Adhesion Improvement for Copper Process in TFT-LCD

  • Tu, Kuo-Yuan;Tsai, Wen-Chin;Lai, Che-Yung;Gan, Feng-Yuan;Liau, Wei-Lung
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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    • pp.1640-1644
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    • 2006
  • The first issue that should be overcome in copper process is its poor adhesive strength between pure copper film and glass substrate. In this study, defining the adhesive strength of pure copper film on various substrates and clarifying the key deposition parameters are presented for the investigation of copper process. First, using different kinds of surface plasma treatments were studied and the results showed that the adhesive strength was not improved even though the roughness of glass substrate surface was increased. Second, adding an adhesive layer between glass substrate and pure copper film was used to enhance the adhesion. Based on the data in the present paper, adopting copper alloy film as an adhesive layer can have capability preventing peeling problem in copper process. Besides, Cu/Cu alloy structure could be etched with the same etchant with better taper angle than the one with single layer of Cu. Unlike Cu/Mo structure, there is no residual problem for Cu/Cu alloy structure during etching process. Finally, this structure was examined in electrical test without significant difference in comparison with the conventional metal process.

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