• Fisheries and Aquatic Sciences
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• v.4 no.3
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• pp.144-149
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• 2001

In other to establish the exact determination method of amino nitrogen (AN) in salt-fermented fish sauces, we determined the AN in fish sauces according to the measuring methods and also investigated the main factors influencing on determination method of AN. AN in salt-fermented anchovy sauce increased linearly as fermentation progressed, and was shown the highest amount measuring by the Formol method, followed by the trinitrobenzene sulfonic acid (TNBS) method and the Copper-salt method. AN concentration in anchovy sauces fermented for 12 months was $88.2\%$ and $77.6\%$ for the TNBS method and the Copper-salt method, respectively, on the basis of Formol method. The ratio of AN/total nitrogen (TN) in anchovy sauce fermented for 12 months was higher than that in commercial anchovy sauces. The determination of AN in anchovy sauce by the TNBS method was not affected by salt concentration, and slightly affected by heating. The effect of MSG on AN contents by Copper-salt method was shown higher than those by the Formol method and the TNBS method. The TNBS method was adaptable to measure the content of AN in fish sauce by this study.

• Advances in environmental research
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• v.4 no.2
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• pp.119-133
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• 2015

Water pollution means that the physical, chemical and biological properties of water are changing. In this study, adsorption was chosen as the treatment method because it is an eco-friendly and low cost approach. Magnetite is a magnetic material that can synthesize chemical precipitation. Magnetite was used for the removal of copper in artificial water samples. For this purpose, metal removal from water dependent on the pH, initial concentration of metal, amount of adsorbent and effect of sorption time were investigated. Magnetite was characterized using XRD, SEM and particle size distribution. The copper ions were determined by atomic absorption spectrometry. The adsorption of copper on the magnetite was studied in a batch process, with different aqueous solutions of Cu (II) at concentrations ranging from 10 to $50mg\;l^{-1}$. Optimum conditions for using magnetite were found to be concentration of $10mg\;L^{-1}$, pH: 4.5, contact time: 40 min. Optimum adsorbent was found to be 0.3 gr. Furthermore, adsorption isotherm data were analyzed using the Langmuir and Freundlich equations. The adsorption data fitted well with the Freundlich ($r^2=0.9701$) and Langmuir isotherm ($r^2=0.9711$) equations. Kinetic and equilibrium aspects of the adsorption process were studied. The time-dependent Cu (II) adsorption data were described well by a pseudo-second-order kinetic model.

• Korean Journal of Materials Research
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• v.29 no.12
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• pp.764-773
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• 2019

The gas response characteristic toward C₂H₅OH has been demonstrated in terms of copper-vacancy concentration, hole density, and microstructural factors for undoped/Li(I)-doped CuO thin films prepared by sol-gel method. For the films, both concentrations of intrinsic copper vacancies and electronic holes decrease with increasing calcination temperature from 400 to 500 to 600 ℃. Li(I) doping into CuO leads to the reduction of copper-vacancy concentration and the enhancement of hole density. The increase of calcination temperature or Li(I) doping concentration in the film increases both optical band gap energy and Cu2p binding energy, which are characterized by UV-vis-NIR and X-ray photoelectron spectroscopy, respectively. The overall hole density of the film is determined by the offset effect of intrinsic and extrinsic hole densities, which depend on the calcination temperature and the Li(I) doping amount, respectively. The apparent resistance of the film is determined by the concentration of the structural defects such as copper vacancies, Li(I) dopants, and grain boundaries, as well as by the hole density. As a result, it is found that the gas response value of the film sensor is directly proportional to the apparent sensor resistance.

• Korean Journal of Materials Research
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• v.30 no.4
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• pp.160-168
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• 2020

The current density in copper electroplating is directly related with the productivity; then, to increase the productivity, an increase in current density is required. This study is based on an analysis of changes in surface characteristics and mechanical properties by applying the addition of Alcian Blue (AB, C₅₆H₆₈Cl₄CuN₁₆S₄). The amount of Alcian Blue in the electrolytes is changed from 0 to 100 ppm. When Alcian Blue is added at 20 ppm, a seed layer is formed homogeneously on the surface at the initial stage of nucleation. However, crystals electroplated in electrolytes with more than 40 ppm of Alcian Blue are observed to have growth in the vertical direction on the surface and the shapes are like pyramids. This tendency of initial nucleation formation causes protrusions when the thickness of copper foil is 12 ㎛. Thereafter, a lot of extrusions are observed on the group of 100 ppm Alcian Blue. Tensile strength of groups with added Alcian Blue increased by more than 140% compare to no-addition group, but elongation is reduced. These results are due to the decrease of crystal size and changes of prior crystal growth plane from (111) and (200) to (220) due to Alcian Blue.

• Electrical & Electronic Materials
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• v.8 no.3
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• pp.298-305
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• 1995

Copper-indium diselenide, $CuInSe_2$, thin films have been fabricated by selenizing Cu/In stacked layers with different sputtered Cu/(Cu+ln) mole ratios at 450.deg. C for 1hr on alumina substrates. The selenium source was selenium vapor. Microstructure, crystallization, and composition of the selenized $CuInSe_2$ films were examined by using scanning electron microscope, X-ray diffraction, Auger electron spectroscopy, and secondary ion mass spectrometry. Electrical resistivity and hall effects were also measured to investigate the electrical properties. As the sputtered Cu/(Cu+In) mole ratio of In/Cu layer increased, the amounts of void and CuSe phase in the selenized films increased but the composition of $CuInSe_2$ phase was the same regardless of the sputtered mole ratio. Comparing the electrical properties of $CuInSe_2$ thin film before and after the chemical etching, it was seen that the electrical resistivity, carrier concentration, and carrier mobility of the selenized films were affected by the amount of CuSe phase which seemed to increase primarily the hole concentration of the selenized films.

• Transactions on Electrical and Electronic Materials
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• v.6 no.1
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• pp.29-32
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• 2005

Chemical mechanical polishing is an essential process in the production of copper-based chips. On this work, the stability of hydrogen peroxide ($H_{2}O_{2}$) as an oxidizer of copper CMP slurry has been investigated. $H_{2}O_{2}$ is known as the most common oxidizer in copper CMP slurry. But $H_{2}O_{2}$ is so unstable that its stabilization is needed using as an oxidizer. As adding KOH as a pH buffering agent, stability of $H_{2}O_{2}$ decreased. However, $H_{2}O_{2}$ stability in slurry went up with putting in small amount of BTA as a film forming agent. There was no difference of $H_{2}O_{2}$ stability between pH buffering agents KOH and TMAH at similar pH value. Addition of $H_{2}O_{2}$ in slurry in advance of bead milling led to better stability than adding after bead milling. Adding phosphoric acid resulted in the higher stability. Using alumina C as an abrasive was good at stabilizing for $H_{2}O_{2}$.

• Corrosion Science and Technology
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• v.4 no.1
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• pp.19-22
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• 2005

Two Au-Ag-Cu-Pd dental casting alloys (Au:12% and 20%) used. The test solutions used 0.9 % NaCl solution (isotonic sodium chloride solution), 0.9 % NaCl solution containing 1 % lactic acid, and 0.9 % NaCl solution containing 1 % lactic acid and 0.1 mol $dm^{-3}$ $Na_2S$. The surface of two samples in three sample solutions was not natural discoloration during one year. The alloy containing 12 % gold was easily alloyed and the composition was uniform comparing with the alloy containing 20 % gold. The rest potentials have not a little effect after three months. The kinds of metals could not definitely from the oxidation and reduction waves of metal on the cyclic voltammograms. The dissolutions of gold and palladium were 12 % Au sample in the 0.9 % NaCl solution containing 1 % lactic acid and 0.1 mol $dm^{-3}$ $Na_{2}S$. The pH of solution had an affect on dissolution of copper, and sulfur ion had an affect on dissolution of silver. The copper dissolved amount from 20 % gold sample was about 26 times comparing with that of 12 % gold sample in the 0.9 % solution containing 1 % lactic acid. Corrosion products were silver chloride and copper chloride in NaCl solution, and silver sulfide and copper sulfide in NaCl solution containing $Na_{2}S$.

• Corrosion Science and Technology
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• v.9 no.6
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• pp.276-280
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• 2010

Copper(Cu) as an interconnecting metal layer can replace aluminum (Al) in IC fabrication since Cu has low electrical resistivity, showing high immunity to electromigration compared to Al. However, it is very difficult for copper to be patterned by the dry etching processes. The chemical mechanical polishing (CMP) process has been introduced and widely used as the mainstream patterning technique for Cu in the fabrication of deep submicron integrated circuits in light of its capability to reduce surface roughness. But this process leaves a large amount of residues on the wafer surface, which must be removed by the post-CMP cleaning processes. Copper corrosion is one of the critical issues for the copper metallization process. Thus, in order to understand the copper corrosion problems in post-CMP cleaning solutions and study the effects of DC biases and post-CMP cleaning solution concentrations on the Cu film, a constant voltage was supplied at various concentrations, and then the output currents were measured and recorded with time. Most of the cases, the current was steadily decreased (i.e. resistance was increased by the oxidation). In the lowest concentration case only, the current was steadily increased with the scarce fluctuations. The higher the constant supplied DC voltage values, the higher the initial output current and the saturated current values. However the time to be taken for it to be saturated was almost the same for all the DC supplied voltage values. It was indicated that the oxide formation was not dependent on the supplied voltage values and 1 V was more than enough to form the oxide. With applied voltages lower than 3 V combined with any concentration, the perforation through the oxide film rarely took place due to the insufficient driving force (voltage) and the copper oxidation ceased. However, with the voltage higher than 3 V, the copper ions were started to diffuse out through the oxide film and thus made pores to be formed on the oxide surface, causing the current to increase and a part of the exposed copper film inside the pores gets back to be oxidized and the rest of it was remained without any further oxidation, causing the current back to decrease a little bit. With increasing the applied DC bias value, the shorter time to be taken for copper ions to be diffused out through the copper oxide film. From the discussions above, it could be concluded that the oxide film was formed and grown by the copper ion diffusion first and then the reaction with any oxidant in the post-CMP cleaning solution.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.14 no.11
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• pp.6015-6022
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• 2013

It has been known that there are large amount of nitric acid and valuable metals, copper in the plating waste solution of automobile wheel. As nitric acid and valuable metals are high price and toxic, they should be recovered for economics and environment. Plating waste was extracted with TBP diluted with kerosene. The concentration of nitric acid in aqueous phase was analyzed by titration method by NaOH solution (0.1~1.0N) and the amount of metals by ICP-MS and ICP-AES. The concentration of copper in plating waste were 76,850 mg/L. The concentration of nitric acid in plating waste was 1.02 M. After three step extraction was performed with 50% TBP, each organic phase was stripped three times with distilled water to obtain 48.1% of nitric acid. Purity of final nitric acid was over 99.9% by ICP analysis. After recovery of nitric acid, copper was extracted with various solvent extractors like PC 88A, D2EPHA, LIX 84 and ISE 106. Among these extractors, 92% of copper was recovered by ISE 106 after 1st extraction and 30% $H_2SO_4$ stripping. Copper ion was reduced with $N_2H_4$ to make metal powders, respectively.

• Applied Chemistry for Engineering
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• v.16 no.4
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• pp.485-490
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• 2005

Effects of gas injectino on the copper recovery form industrial waste water in a fluidized-bed electrolytic reactor were investigated. Effects of gas injection on the individual phase holdup and efficiency of copper recovery for given operating variables such as liquid and gas velocity (0.1~0.4 cm/s), current density ($2.0{\sim}3.5A/dm^2$) and amount of fluidized solid particles (1.0~4.0 wt%) were examined. The solid particle, whose diameter and swelling density were 0.5 mm and $1100kg/m^3$, respectively, was made of polystylene and divinyl benzene. It was found that the holdup of gas and solid phases increased, but that of the liquid phase decreased with increasing velocity of gas injected into the reactor. With increasing gas and/or liquid velocity and increasing amount of fluidized particles is not needed, the rate of copper recovery increased to a maximum value of and subsequently decreased. The recovery rate of copper increased almost linearly with increasing current density in accordance with Faraday's law.