• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.1
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• pp.19-25
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• 2015

In this paper, a design method for a CPW-fed slot antenna for harmonic suppression is studied. The structure of the proposed slot antenna is a rectangular slot antenna appended with stepped impedance resonators (SIRs) at both ends of the slot symmetrically. Optimal design parameters are obtained by analyzing the effects of the length and width of the SIRs on the input reflection coefficient. The optimized harmonic-suppressed slot antenna operating at 2.45 GHz WLAN band is fabricated on an FR4 substrate with a dimension of 42 mm by 30 mm. The slot length of the proposed harmonic-suppressed slot antenna is reduced to 33.3% compared to that of a conventional rectangular slot antenna owing to the appended SIRs. Experiment results show that the antenna has a desired impedance characteristic with a frequency band of 2.39-2.49 GHz for a VSWR < 2, and a measured gain of 2.5 dBi at 2.45 GHz.

• The Journal of the Korea institute of electronic communication sciences
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• v.17 no.5
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• pp.759-766
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• 2022

In this paper, we propose a multi-band small antenna with CPW(Coplanar Waveguide) feeding structure WLAN(Wireless Local Area Network) and WiMAX (Worldwide Interoperability for Microwave Access) bands. The proposed antenna is designed two slit in the modified monopole type radiator and FR-4 substrate, which is thickness 1.0 mm, and the dielectric constant is 4.4. The size of proposed antenna is 15.1 mm⨯16.41 mm, and total size of proposed antenna is 17.5 mm⨯16.4 mm. From the fabrication and measurement results, From the fabrication and measurement results, bandwidths of 439 MHz (2.06 to 2.499 GHz), 840 MHz (3.31 to 4.25) and 1,315 MHz (5.23 to 6.545 GHz) were obtained on the basis of -10 dB impedance bandwidth. Also, 3D radiation pattern characteristics of the proposed antenna are displayed and measured gains 2.24 dBi, 2.83 dBi, and 2.0 dBi shown in the three frequency band, respectively.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.7
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• pp.37-45
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• 2002

In this paper, the microwave characteristics of traveling-wave electroabsorption coplanar waveguide modulator have been analyzed and optimized precisely by using the 3-dimensional finite-difference time-domain method (FDTD). Microwave characteristics are affected by the thickness of intrinsic layer, the width of meas, and the distance between signal electrode and ground electrode on traveling-wave type structure. In case that intrinsic layers are composed of InAsP/InGaP (1.3Q), the optimized distance between signal electrode and ground electrode, the optimized intrinsic region thickness and the width of waveguide are founded to be $3{\mu}m,\;039{\mu}m\;and\;2{\mu}m$, respectively, to minimize microwave loss and to obtain velocity and impedance matched structure. By using the FDTD, we could design the traveling-wave electroabsorption modulator more precisely.

• ETRI Journal
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• v.26 no.4
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• pp.315-320
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• 2004

This paper proposes a 10-${\mu}m$ thick oxide layer structure that can be used as a substrate for RF circuits. The structure has been fabricated using an anodic reaction and complex oxidation, which is a combined process of low-temperature thermal oxidation (500 $^{\circ}C$ for 1 hr at $H_2O/O_2$) and a rapid thermal oxidation (RTO) process (1050 ${\circ}C$, for 1 min). The electrical characteristics of the oxidized porous silicon layer (OPSL) were almost the same as those of standard thermal silicon dioxide. The leakage current density through the OPSL of 10 ${\mu}m$ was about 10 to 50 $nA/cm^2$ in the range of 0 to 50 V. The average value of the breakdown field was about 3.9 MV/cm. From the X-ray photo-electron spectroscopy (XPS) analysis, surface and internal oxide films of OPSL prepared by a complex process were confirmed to be completely oxidized. The role of the RTO process was also important for the densification of the porous silicon layer (PSL) oxidized at a lower temperature. The measured working frequency of the coplanar waveguide (CPW) type short stub on an OPSL prepared by the complex oxidation process was 27.5 GHz, and the return loss was 4.2 dB, similar to that of the CPW-type short stub on an OPSL prepared at a temperature of 1050 $^{\circ}C$ (1 hr at $H_2O/O_2$). Also, the measured working frequency of the CPW-type open stub on an OPSL prepared by the complex oxidation process was 30.5 GHz, and the return was 15 dB at midband, similar to that of the CPW-type open stub on an OPSL prepared at a temperature of $1050^{\circ}C$ (1 hr at $H_2O/O_2$).

• Journal of Advanced Navigation Technology
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• v.16 no.1
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• pp.27-34
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• 2012

In this paper, Coplanar waveguide(CPW)-fed slot loop antenna, which is applicable to the dual band(2.4GHz~2.4835GHz, 5.15GHz~5.825GHz) for the wireless LAN, is proposed. In order to miniaturize the proposed antenna, slot loop is bent by meandering. The resonant frequencies in the required dual band are adjusted by variation of the resonant length of slot loop as well as slot width. In particular, use of capacitive coupling CPW feed provides impedance matching without a seperate matching circuit, because the amount of electromagnetic coupling can be controlled by the offset between feed and radiator. As a result, it has been observed that the proposed antenna satisfies not only the required return loss(${\leq}10dB$) but also has high efficiency(${\geq}80%$) over the whole frequency band. In order to check the validity of the proposed antenna, some simulated results for return loss and radiation pattern are presented in comparison with the measured results.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2014.10a
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• pp.157-158
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• 2014

In this paper, a design method for a compact CPW-fed slot antenna using SRRs(split-ring resonators) is studied. The structure of the proposed slot antenna is a rectangular slot antenna loaded with SRR conductors inside the slot to reduce the antenna size. Optimal design parameters are obtained by analyzing the effects of the gap between the SRR conductors and slot, and the width of the SRR conductors on the input reflection coefficient characteristic. The optimized compact slot antenna operating at 2.45 GHz band is fabricated on an FR4 substrate with a dimension of 36 mm by 30 mm. The length of the proposed compact slot antenna is reduced by 14.3% compared to that of a conventional rectangular slot antenna. Experiment results show that the antenna has a desired impedance characteristic with a frequency band of 2.4-2.49 GHz for a VSWR < 2.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.4
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• pp.1-6
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• 2008

In this paper, millimeter-wave broadband MHEMT (Metamorphic High Electron Mobility Transistor) cascode amplifiers were designed and fabricated. The $0.1{\mu}m$ InGaAs/InAlAs/GaAs MHEMT was fabricated for cascode amplifiers. The DC characteristics of MHEMT are 670 mA/mm of drain current density, 588 mS/mm of maximum transconductance. The current gain cut-off frequency($f_T$) is 139 GHz and the maximum oscillation frequency($f_{max}$) is 266 GHz. To prevent oscillation of the designed cascode amplifiers, a parallel resistor and capacitor were connected to the drain of common gate device. By using the CPW (Coplanar Waveguide) transmission line, the cascode amplifier was designed and matched for the broadband characteristics. The designed amplifier was fabricated by the MHEMT MMIC process that was developed through this research. As the results of measurement, the amplifier was obtained 3 dB bandwidth of 50.37 GHz between 20.76 to 71.13 GHz. Also, this amplifier represents the S21 gain with the average 7.07 dB gain in bandwidth and the maximum gain of 10.3 dB at 30 GHz.

• Transactions on Electrical and Electronic Materials
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• v.17 no.3
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• pp.129-133
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• 2016

Theoretical and graphical analysis of pull-in-voltage and figure of merit for a fixed-fixed capacitive Micro Electromechanical Systems (MEMS) switch is presented in this paper. MEMS switch consists of a thin electrode called bridge suspended over a central line and both ends of the bridge are fixed at the ground planes of a coplanar waveguide (CPW) structure. A thin layer of dielectric material is deposited between the bridge and centre conductor to avoid stiction and provide low impedance path between the electrodes. When an actuation voltage is applied between the electrodes, the metal bridge acquires pull in effect as it crosses one third of distance between them. In this study, we describe behavior of pull-in voltage and figure of merit (or capacitance ratio) of capacitive MEMS switch for five different dielectric materials. The effects of dielectric thicknesses are also considered to calculate the values of pull-in-voltage and capacitance ratio. This work shows that a reduced pull-in-voltage with increase in capacitance ratio can be achieved by using dielectric material of high dielectric constant above the central line of CPW.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1509_1510
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• 2009

This paper presents the design and simulation results of ohmic contact RF MEMS silicon switch with a high isolation at high frequencies along with the position of a contact part, initial off-state and intermediate off-state including the state where a contact part is placed right over a signal line of coplanar waveguide (CPW). The ohmic contact part is connected with comb drives made of high resistivity single crystalline silicon. The released contact part is $30{\mu}m$ apart from the edge of signal line on the glass substrate along the lateral direction (x-direction) at initial off-state. The electrostatic force of the comb electrode creates the x-directional movement thus initial state is converted to the intermediate off-state. The initial off-state of the switch results in isolations of -31 dB, -24 dB and reflections of -0.45 dB, -0.67 dB at 50 GHz and 110 GHz, respectively. It shows the isolation degradation when the contact part moves right over the signal line of CPW like an initial off-state of a conventional MEMS switch. The isolations and reflections are -31 dB, -24 dB and -0.50 dB, -1.31 dB at 50 GHz and 110 GHz, respectively at the intermediate off-state.

• Journal of Advanced Navigation Technology
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• v.7 no.2
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• pp.180-190
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• 2003

By using accurate closed-form Green's functions obtained from real-axis integration method, the full-wave analysis of CPW discontinuities are performed in space domain. In solving MPIE(Mixed Potential Integral Equation), Galerkin's scheme is employed with the linear basis functions on the triangular elements in air-dielectric boundary. In the singular integral arising when the observation point and source point coincides, the surface integral is transformed into the line integral and the integral is evaluated by regular integration. By using the Green's function from the real-axis integration method, the discontinuities are characterized accurately.