• 제목/요약/키워드: conventional oxide method

검색결과 321건 처리시간 0.03초

Nanomaterials for Advanced Electrode of Low Temperature Solid Oxide Fuel Cells (SOFCs)

  • Ishihara, Tatsumi
    • 한국세라믹학회지
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    • 제53권5호
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    • pp.469-477
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    • 2016
  • The application of nanomaterials for electrodes of intermediate temperature solid oxide fuel cells (SOFC) is introduced. In conventional SOFCs, the operating temperature is higher than 1073 K, and so application of nanomaterials is not suitable because of the high degradation rate that results from sintering, aggregation, or reactions. However, by allowing a decrease of the operating temperature, nanomaterials are attracting much interest. In this review, nanocomposite films with columnar morphology, called double columnar or vertically aligned nanocomposites and prepared by pulsed laser ablation method, are introduced. For anodes, metal nano particles prepared by exsolution from perovskite lattice are also applied. By using dissolution and exsolution into and from the perovskite matrix, performed by changing $P_{O2}$ in the gas phase at each interval, recovery of the power density can be achieved by keeping the metal particle size small. Therefore, it is expected that the application of nanomaterials will become more popular in future SOFC development.

DSSC광전극의 나노구조 제어 및 투명전극 소재 개발

  • 장현석
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.28-28
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    • 2010
  • Photoelectrochemical solar cells such as dye-sensitized cells (DSSCs), which exhibit high performance and are cost-effective, provide an alternative to conventional p-n junction photovoltaic devices. However, the efficiency of such cells plateaus at 11-12%, in contrast to their theoretical value of 33%. Improvements in efficiency can only occur through a fundamental understanding of the underlying physics, materials, and device designs of DSSCs. A photoelectrode consisting of semiconducting oxide nanoparticles and a transparent conducting oxide electrode (TCO) is a key component of DSSC and design of photoelectrode materials is one of promising strategies to improving energy conversion efficiency. We introduce monodisperesed $TiO_2$ nanoparticles prepared by forced hydrolysis method and their superiority as photoelectrode materials was characterized with aids of optical and electrochemical analysis. Multi-layered TCO materials are also introduced and their feasibility for use as photoelectrodes is discussed in terms of optical absorption and charge collecting properties.

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고에너지 밀도 바나듐 레독스 흐름 전지를 위한 망간산화물 촉매와 다공성 탄소 기재의 시너지 효과 (Synergistic Effect of the MnO Catalyst and Porous Carbon Matrix for High Energy Density Vanadium Redox Flow Battery)

  • 김민성;고민성
    • 한국표면공학회지
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    • 제52권3호
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    • pp.150-155
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    • 2019
  • The carbon electrode was modified through manganese-catalyzed hydrogenation method for high energy density vanadium redox flow battery (VRFB). During the catalytic hydrogenation, the manganese oxide deposited at the surface of the carbon electrode stimulated the conversion reaction from carbon to methane gas. This reaction causes the penetration of the manganese and excavates a number of cavities at electrode surface, which increases the electrochemical activity by inducing additional electrochemically active site. The formation of the porous surface was confirmed by the scanning electron microscopy (SEM) images. Finally, the electrochemical performance test of the electrode with the porous surface showed lower polarization and high reversibility in the cathodic reaction compared to the conventional electrode.

감마선 멸균기술을 이용한 의약외품의 무균보증수준(SAL 10-6) 확보 및 세포독성 평가 (SAL 10-6 and Cytotoxicity of Sanitary Aid Products Utilizing Gamma Sterilization Technology)

  • 김광훈;엄용운;이후철;박성현;김수진;김관수;박순연;정일윤
    • 방사선산업학회지
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    • 제8권2호
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    • pp.133-140
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    • 2014
  • The sterilization of health care products is widely used to choose conventional Ethylene Oxide gas sterilization in South Korea. But the method has brought serious issues because of the toxic residual gas and global warming of $CO_2$ evacuation after the sterilization process. This study is carried out to confirm the application possibility of gamma sterilization instead of Ethylene Oxide in sanitary aid products. Four kinds of products (gauze, menstrual pad, bandage, menstrual tampon) were treated with gamma irradiation of 15 kGy, then analyzed the achievement of the sterility assurance level (SAL) $10^{-6}$ through BI test. The cytotoxicity of accelerated samples of 6 months elapse evaluated by means of colony forming rate at various concentration of the extracts. pH and UV measurements at extract concentrations were tested according to the MFDS (Ministry of food & drug safety) guideline to verify a stability & safety of product sterilized. The results revealed that the extracts did not show any significant changes in cytoxicity assay as well as pH and UV values by gamma sterilization. All extract concentration was observed high cell viability, pH and UV values were calculated within the acceptable range prescribed by the guideline. It indicates that gamma sterilization could effectively substitute for conventional sterilization such as Ethylene Oxide sterilization in the sanitary aid products.

저전압 구동용 전기스위치와 미러 어레이 응용을 위한 새로운 표면미세가공기술 (A New Surface Micromachining Technology for Low Voltage Actuated Switch and Mirror Arrays)

  • 박상준;이상우;김종팔;이상우;이상철;김성운;조동일
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1998년도 하계학술대회 논문집 G
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    • pp.2518-2520
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    • 1998
  • Silicon can be reactive ion etched (RIE) either isotropically or anisotropically. In this paper, a new micromachining technology combining these two etching characteristics is proposed. In the proposed method, the fabrication steps are as follows. First. a polysilicon layer, which is used as the bottom electrode, is deposited on the silicon wafer and patterned. Then the silicon substrate is etched anisotropically to a few micrometer depth that forms a cavity. Then an PECVD oxide layer is deposited to passivate the cavity side walls. The oxide layers at the top and bottom faces are removed while the passivation layers of the side walls are left. Then the substrate is etched again but in an isotropic etch condition to form a round trench with a larger radius than the anisotropic cavity. Then a sacrificial PECVD oxide layer is deposited and patterned. Then a polysilicon structural layer is deposited and patterned. This polysilicon layer forms a pivot structure of a rocker-arm. Finally, oxide sacrificial layers are etched away. This new micromachining technology is quite simpler than conventional method to fabricate joint structures, and the devices that are fabricated using this technology do not require a flexing structure for motion.

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Ni-Mn 산화물 NTC 서미스터의 미세구조와 전기적 특성에 미치는 CuO 첨가의 효과 (Effect of CuO Addition on the Microstructural and Electrical Properties of Ni-Mn Oxide NTC Thermistor)

  • 김경민;이성갑;이동진;박미리
    • 한국전기전자재료학회논문지
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    • 제29권6호
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    • pp.337-341
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    • 2016
  • In this study, $ Ni_{0.79}(Mn_{2.21-x}Cu_x)O_4$ (x=0~0.25) specimens were prepared by using a conventional mixed oxide method. All specimens were sintered in air at $1,200^{\circ}C$ for 12 h and cooled at a rate of $2^{\circ}C/min$ to $800^{\circ}C$, subsequently quenching to room temperature. We investigated the structural and electrical properties of $ Ni_{0.79}(Mn_{2.21-x}Cu_x)O_4$ specimens with variation of CuO amount for the application of NTC thermistors. As results of X-ray diffraction patterns, all specimens showed the formation of a complete solid solution with cubic spinel phase. The relationship between ln ${\rho}$ and the reciprocal of absolute temperature(1/T) for the NTC thermistors was shown linearity, which exhibited the typical NTC thermistor properties. With increasing the amount of CuO, resistivity at room temperature, B-value, and temperature coefficient resistance decreased.

GaN 단결정에 의해 제조된 $Ga_2O_3$ 나노물질의 구조 (The structure of $Ga_2O_3$ nanomaterials synthesized by the GaN single crystal)

  • 박상언;조채룡;김종필;정세영
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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    • pp.120-120
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    • 2003
  • The metallic oxide nanomaterials including ZnO, Ga$_2$O$_3$, TiO$_2$, and SnO$_2$ have been synthesized by a number of methods including laser ablation, arc discharge, thermal annealing procedure, catalytic growth processes, and vapor transport. We have been interested in preparing the nanomaterials of Ga$_2$O$_3$, which is a wide band gap semiconductor (E$_{g}$ =4.9 eV) and used as insulating oxide layer for all gallium-based semiconductor. Ga$_2$O$_3$ is stable at high temperature and a transparent oxide, which has potential application in optoelectronic devices. The Ga$_2$O$_3$ nanoparticles and nanobelts were produced using GaN single crystals, which were grown by flux method inside SUS$^{TM}$ cell using a Na flux and exhibit plate-like morphologies with 4 ~ 5 mm in size. In these experiments, the conventional electric furnace was used. GaN single crystals were pulverized in form of powder for the growth of Ga$_2$O$_3$ nanomaterials. The structure, morphology and composition of the products were studied mainly by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), and high-resolution transmission electron microscopy (HRTEM).).

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A novel approach for manufacturing oxide dispersion strengthened (ODS) steel cladding tubes using cold spray technology

  • Maier, Benjamin;Lenling, Mia;Yeom, Hwasung;Johnson, Greg;Maloy, Stuart;Sridharan, Kumar
    • Nuclear Engineering and Technology
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    • 제51권4호
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    • pp.1069-1074
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    • 2019
  • A novel fabrication method of oxide dispersion strengthened (ODS) steel cladding tubes for advanced fast reactors has been investigated using the cold spray powder-based materials deposition process. Cold spraying has the potential advantage for rapidly fabricating ODS cladding tubes in comparison with the conventional multi-step extrusion process. A gas atomized spherical 14YWT (Fe-14%Cr, 3%W, 0.4%Ti, 0.2% Y, 0.01%O) powder was sprayed on a rotating cylindrical 6061-T6 aluminum mandrel using nitrogen as the propellant gas. The powder lacked the oxygen content needed to precipitate the nanoclusters in ODS steel, therefore this work was intended to serve as a proof-of-concept study to demonstrate that free-standing steel cladding tubes with prototypical ODS composition could be manufactured using the cold spray process. The spray process produced an approximately 1-mm thick, dense 14YWT deposit on the aluminum-alloy tube. After surface polishing of the 14YWT deposit to obtain desired cladding thickness and surface roughness, the aluminum-alloy mandrel was dissolved in an alkaline medium to leave behind a free-standing ODS tube. The as-fabricated cladding tube was annealed at $1000^{\circ}C$ for 1 h in an argon atmosphere to improve the overall mechanical properties of the cladding.

Touch Screen Sensing Circuit with Rotating Auto-Zeroing Offset Cancellation

  • Won, Dong-Min;Kim, HyungWon
    • Journal of information and communication convergence engineering
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    • 제13권3호
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    • pp.189-196
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    • 2015
  • In this paper, we present a rotating auto-zeroing offset cancellation technique, which can improve the performance of touch screen sensing circuits. Our target touch screen detection method employs multiple continuous sine waves to achieve a high speed for large touch screens. While conventional auto-zeroing schemes cannot handle such continuous signals properly, the proposed scheme does not suffer from switching noise and provides effective offset cancellation for continuous signals. Experimental results show that the proposed technique improves the signal-to-noise ratio by 14 dB compared to a conventional offset cancellation scheme. For the realistic simulation results, we used Cadence SPECTRE with an accurate TSP model and noise source. We also applied an asymmetric device size (10% MOS size mismatch) to the OP Amp design in order to measure the effectiveness of offset cancellation. We implemented the proposed circuit as part of a touch screen controller system-on-chip by using a Magnachip/SK Hynix 0.18-µm complementary metal-oxide semiconductor (CMOS) process.

SONOS two-bit 메모리의 측면확산에 영향을 주는 programming 조건 연구 (A study on the programming conditions suppressing the lateral diffusion of charges for the SONOS two-bit memory)

  • 이명식;안호명;서광열;고중혁;김병철;김주연
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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    • pp.117-120
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    • 2005
  • The SONOS devices have been fabricated by the conventional $0.35{\mu}m$ complementary metal-oxide-semiconductor (CMOS) process with NOR array. Two-bit operation using conventional process achieve the high density memory compare with other two-bit memory. Lateral diffusion phenomenon in the two-bit operation cause soft error in the memory. In this study, the programming conditions arc investigated in order to reduce lateral diffusion for two-bit operation of CSL-NOR type SONOS flash cell.

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