• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.10
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• pp.438-442
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• 2005

Si nanocrystal (Si NC) memory device has several advantages such as better retention, lower operating voltage, reduced punch-through and consequently a smaller cell area, suppressed leakage current. However, the physical and electrical reasons for this behavior are not completely understood but could be related to interface states of Si NCs. In order to find out this effect, we characterized electrical properties of Si NCs embedded in a SiO$_{2}$ layer by scanning probe microscopy (SPM). The Si NCs were generated by the laser ablation method with compressed Si powder and followed by a sharpening oxidation. In this step Si NCs are capped with a thin oxide layer with the thickness of 1$\~$2 nm for isolation and the size control. The size of 51 NCs is in the range of 10$\~$50 m and the density around 10$^{11}$/cm$^{2}$ It also affects the interface states of Si NCs, resulting in the change of electrical properties. Using a conducting tip, the charge was injected directly into each Si NC, and the image contrast change and dC/dV curve shift due to the trapped charges were monitored. The results were compared with C-V characteristics of the conventional MOS capacitor structure.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.7
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• pp.305-310
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• 2002

The microwave dielectric properties of Ba(Mg$_{1}$3/Ta$_{2}$3/O$_3$-Ba(Co$_{1}$3/Nb$_{2}$3/O$_3$[BMT-BCN] ceramics were investigated. The specimens were prepared by the conventional mixed oxide method with the sintering temperature of 15$25^{\circ}C$~1575$^{\circ}C$. It was found that Ba(Mg$_{1}$3/Ta$_{2}$3/O$_3$[BMT] and BCN formed a solid solution with complex perovskite structure. As increasing the mole fraction of BCN, dielectric constant increased while the temperature coefficient of resonant frequency was changed from positive to negative value. The highest value of quality factor, Q$\times$f$_{0}$=138,205GHz, obtained in the 0.9BMT-0.1BCN ceramics sintered at 1575$^{\circ}C$. In the range of x$\geq$0.4, the dielectric constant was about 30. The 0.55BMT-0.45BCN ceramics sintered at 15$25^{\circ}C$ for 5 hours showed the microwave dielectric properties of $\varepsilon$$_{r}$=30.21, Q$\times$f$_{0}$=85,789GHz and $\tau$$_{f}$=2.9015ppm/$^{\circ}C$.EX>.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.284-287
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• 2002

The $BaTi_{4}O_{9}$ ceramics with CoO(0.5wt%) were prepared by the conventional mixed oxide method. The sintering temperature and time were $1350^{\circ}C$, 3hr., respectively. The structural properties were investigated with sintering temperature by XRD. Also the microwave dielectric properties of the $BaTi_{4}O_{9}$ ceramics were studied. According to the X -ray diffraction patte구 of the $BaTi_{4}O_{9}$ ceramics with CoO(0.5wt%), the orthorhombic $BaTi_{4}O_{9}$ structure was appeared. In the case of $BaTi_{4}O_{9}$ ceramics with CoO(0.5wt%), dielectric constant $(\varepsilon_{r})$, quality factor$(Q{\times}f_r)$ and temperature coefficient of resonant frequency$(\tau_{f})$ were 40.8, 43,270 and $2.5ppm/^{\circ}C$, respectively.ࠀࠀ Ѐ耀
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• Journal of IKEEE
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• v.18 no.2
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• pp.214-219
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• 2014

In this paper, the usage of tilt-implanted trench Schottky diode(TITSD) based on silicon carbide is proposed. A tilt-implanted trench termination technique modified for SiC is proposed as a method to keep all the potentials confined in the trench insulator when reverse blocking mode is operated. With the side wall doping concentration of $1{\times}10^{19}cm^{-3}$ nitrogen, the termination area of the TITSD is reduced without any sacrifice in breakdown voltage while potential is confined within insulator. When the trench depth is set to 11um and the width is optimized, a breakdown voltage of 2750V is obtained and termination area is 38.7% smaller than that of other devices which use guard rings for the same breakdown voltage. A Sentaurus device simulator is used to analyze the characteristics of the TITSD. The performance of the TITSD is compared to the conventional trench Schottky diode.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.7
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• pp.347-351
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• 2004

The $ZnNb_2O_{6}$ ceramics with CuO(1, 3, 5wt%) were prepared by the conventional mixed oxide method. The ceramics were sintered at the temperature of $950^{\circ}C$∼$1075^{\circ}C$ for 3hr in air The structural properties and the microwave dielectric properties of $ZnNb_2O_{6}$ ceramics were investigated with sintering temperature and the addition of CuO. Increasing the addition of CuO, the peak of second phase($Cu_3Nb_2O_{8}$) was increased. The grain size of the $ZnNb_2O_{6}$ ceramics with CuO was increased with CuO addition at same temperature. The dielectric constant of $ZnNb_2O_{6}$ ceramics with CuO was increased with sintering temperature and CuO addition. While the quality factor of the $ZnNb_2O_{6}$ ceramics with lwt% CuO depended on sinterability, the quality factor of $ZnNb_2O_{6}$ with 3wt% and 5wt% CuO depended on second Phase due to the CuO addition. The optimum dielectric Properties of $\varepsilon$$_{r}$ = 21.73 Q${\times}$f = 19,276 were obtained from the condition of 3wt% CuO addition and sintering temperature of $1025^{\circ}C$(3hr).

• Transactions of the Korean hydrogen and new energy society
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• v.21 no.5
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• pp.375-382
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• 2010

A layered perovskite photocatalysts, $SrBi_2Nb_2O_9$ (SBN), was synthesized by the conventional solid-state reaction method and characterized by X-ray diffraction (XRD) and UV-visble spectrophotometry. The results showed that the structure of $SrBi_2Nb_2O_9$ is orthorhombic. Diffuse reflectance spectra for calcined and attrition-milled SBN showed the main absorption edges were less 400 nm, that is ultraviolet region. SBN under micron-sized powder was deposited on the $Al_2O_3$ by room temperature powder spray in vacuum process, so called aerosol deposition (AD), and nano-grained $SrBi_2Nb_2O_9$ photocatalytic thick film was fabricated. AD-deposited SBN thick films were characterized by XRD, scanning electron microscopy (SEM) and UV-visable spectrophotometry, Moreover, it was found that several nano-sized SBN film by AD process can improve the photocatalytic activity under visable reflectance.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.5
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• pp.226-231
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• 2001

The $Mg_{1-x}Sr_xTiO_3\;(x=0.02{\sim}0.08)$ ceramics were fabricated by the conventional mixed oxide method. The sintering temperature and time were $1250^{\circ}C{\sim}1350^{\circ}C$, 2hr., respectively. From the X-ray diffraction patterns, it was found that the perovskite $SrTiO_3$ and ilmenite $MgTiO_3$ structures were coexisted in the $Mg_{1-x}Sr_xTiO_3\;(x=0.02{\sim}0.08)$ ceramics. The dielectric constant( ${\epsilon}_r$) was increased with addition of $SrTiO_3$. The temperature coefficient of resonant frequency( ${\tau}_f$) was gradually varied from negative value to the positive value with increasing the $SrTiO_3$. The temperature coefficient of resonant frequency of the $Mg_{1-x}Sr_xTiO_3(x=0.036)$ ceramics was near zero, where the dielectric constant, quality factor, and ${\tau}_f$ were 20.65, 95120 and +1.3ppm/$^{\circ}C$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.547-550
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• 2000

The (1-x)MgTiO$_3$-xSrTiO$_3$(x=0.03~0.04) ceramics were fabricated by the conventional mixed oxide method. The sintering temperature and time were 125$0^{\circ}C$~135$0^{\circ}C$, 2hr., respectively. From the X-ray diffraction patterns, it was found that the perovskite SrTiO$_3$ and ilmenite MgTiO$_3$ structures coexisted in the (1-x)MgTiO$_3$-xSrTiO$_3$(x=0.03~0.04) ceramics. The dielectric constant($\varepsilon$$_{r}$) was increased with addition of SrTiO$_3$. The temperature coefficient of resonant frequency($\tau$$_{f}$) was gradually varied from negative value to the positive value with increasing the SrTiO$_3$. The negative temperature coefficient of resonant frequency of the magnesium titanate was adjusted to near zero at x=0.036, where the dielectric constant, quality factor, and $\tau$$_{f}$ were 20.65, 95120, and +1.3ppm/$^{\circ}C$, respectively. The temperature stability of qualify factor in (1-x)MgTiO$_3$-xSrTiO$_3$(x=0.03~0.04) ceramics increased as the amount of MgTiO$_3$./TEX>.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.2
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• pp.67-72
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• 2004

The microwave dielectric properties and microstructure of the (1-x)$Mg_4Ta_2O_{9-x}TiO_2$(X=0, 0.3, 0.4) ceramic were, investigated. The specimens were prepared by the conventional mixed oxide method with sintering temperature of $1350^{\circ}C$∼$1425^{\circ}C$. According to the XRD patterns, the (1-x)$Mg_4Ta_2O_{9-x}TiO_2$(X=0, 0.3, 0.4) ceramics have the $Mg_4Ta_2O_{9}$ phase(hexagonal). The dielectric constant($\varepsilon$$_{\gamma}$) and density increased with sintering temperature and mole fraction of x. To improve the quality factor and the temperature coefficient of resonant frequency, TiO$_2$($\varepsilon_{r}$=100, $Q{\times}f_{r}$=40,000GHz, $\tau$$_{f}$=＋450 ppm/$^{\circ}C$) was added in $Mg_4Ta_2O_{9}$ ceramics. In the case of the $0.7Mg_4Ta_2O_{9}$-$0.3TiO_2$ and the $0.6Mg_4Ta_2O_{9}$-$0.4TiO_2$ceramics sintered at $1400^{\circ}C$ for 5hr., the microwave dielectric properties were $\varepsilon$$_{\gamma}$=11.72, $Q{\times}f_{r}$=126,419GHz, $\tau_{f}$=-31.82 ppm/$^{\circ}C$ and $\varepsilon_{r}$=12.19, $Q{\times}f_{r}$=109,411GHZ, $\tau$$_{f}$= -17.21 ppm/$^{\circ}C$, respectively.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.11
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• pp.2021-2025
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• 2010

Electrical and structural properties were investigated on the effects of ZnO and the lead-free NKN-LST ceramics with the addition of ZnO were fabricated by a conventional mixed oxide method. A gradual change in the crystal and microstructure was observed with the increase of ZnO addition. For the NKN-LST-ZnO ceramics sintered at $1050^{\circ}C$, bulk density increased with the addition of ZnO and showed maximum value at addition 2.0mol% of ZnO. Curie temperature of the NKN-LST-ZnO ceramics slightly decreased with adding ZnO. The dielectric constant, piezoelectric constant ($d_{33}$) and electromechanical coupling factor ($k_p$) increased at the small amount of ZnO addition, which might be due to the increase in density. The high piezoelectric properties = 153 pC/N, electromechanical coupling factor = 0.484 and dielectric constant = 2883 were obtained for the NKN-LST+0.5ZnO ceramics sintered at $1050^{\circ}C$ for 2h.