• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.463-463
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• 2014

Dye-sensitized solar cells (DSSCs) have generated a strong interest in the development of solid-state devices owing to their low cost and simple preparation procedures. Effort has been devoted to the study of electrolytes that allow light-to-electrical power conversion for DSSC applications. Several attempts have been made to substitute the liquid electrolyte in the original solar cells by using (2,2',7,7'-tetrakis (N,N-di-p-methoxyphenylamine)-9-9'-spirobi-fluorene (spiro-OMeTAD) that act as hole conductor [1]. Although efficiencies above 3% have been reached by several groups, here the major challenging is limited photoelectrode thickness ($2{\mu}m$), which is very low due to electron diffusion length (Ln) for spiro-OMeTAD ($4.4{\mu}m$) [2]. In principle, the $TiO_2$ layer can be thicker than had been thought previously. This has important implications for the design of high-efficiency solid-state DSSCs. In the present study, we have fabricated 3-D Transparent Conducting Oxide (TCO) by growing tin-doped indium oxide (ITO) nanowire (NWs) arrays via a vapor transport method [3] and mesoporous $TiO_2$ nanoparticle (NP)-based photoelectrodes were prepared using doctor blade method. Finally optimized light-harvesting solid-state DSSCs is made using 3-D TCO where electron life time is controlled the recombination rate through fast charge collection and also ITO NWs length can be controlled in the range of over $2{\mu}m$ and has been characterized using field emission scanning electron microscopy (FE-SEM). Structural analyses by high-resolution transmission electron microscopy (HRTEM) and X-Ray diffraction (XRD) results reveal that the ITO NWs formed single crystal oriented [100] direction. Also to compare the charge collection properties of conventional NPs based solid-state DSSCs with ITO NWs based solid-state DSSCs, we have studied intensity modulated photovoltage spectroscopy (IMVS), intensity modulated photocurrent spectroscopy (IMPS) and transient open circuit voltages. As a result, above $4{\mu}m$ thick ITO NWs based photoelectrodes with Z907 dye shown the best performing device, exhibiting a short-circuit current density of 7.21 mA cm-2 under simulated solar emission of 100 mW cm-2 associated with an overall power conversion efficiency of 2.80 %. Finally, we achieved the efficiency of 7.5% by applying a CH3NH3PbI3 perovskite sensitizer.

• Journal of Korea Foundry Society
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• v.40 no.3
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• pp.85-96
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• 2020

The effect of an aluminum scrap addition ratio on the tensile and solidification cracking properties of the AC4A aluminum alloy in the as-cast state and heat-treated state were investigated in this study. Generally, the expected problem of using scrap in aluminum casting is an increase of hydrogen and Fe element inside the aluminum melt. Another issue is an oxide film which has a weak interface with the molten aluminum and acts as potent nucleation sites for internal porosity and crack initiation. Solidification cracking is one of the critical defects that must be resolved to produce high quality castings. A conventional evaluation method for solidification cracking is a relative and qualitative analysis method which does not provide quantitative data on the thermal stress in the solidification process. Therefore, a newly designed solidification cracking test apparatus was used in this study, and the device can provide quantitative data. As a result, after conducting experiments with different scrap addition ratios (0%, 20%, 35%, 50%), the tensile strengths and elongations in the as-cast state were 214, 187.7, 182.1 and 170.4MPa and 4.6%, 3.4%, 3.1% and 2.3%, respectively. In the case of the T6 heat-treated state, the tensile strengths and elongations were 314.9, 294.6, 293.1 and 271.1MPa and 5.4%, 4.6%, 3.8% and 3.1%, respectively. The strength of the solidification cracking was 3.1, 2.4, 2.2and 1.6MPa as the scrap addition ratio increases.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.95-95
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• 2014

An OLED(Organic Light-Emitting Diode) device based on the emissive electroluminescent layer a film of organic materials. OLED is used for many electronic devices such as TV, mobile phones, handheld games consoles. ULVAC's mass production systems are indispensable to the manufacturing of OLED device. ULVAC is a manufacturer and worldwide supplier of equipment and vacuum systems for the OLED, LCD, Semiconductor, Electronics, Optical device and related high technology industries. The SMD Series are single-substrate sputtering systems for deposition of films such as metal films and TCO (Transparent Conductive Oxide) films. ULVAC has delivered a large number of these systems not only Organic Evaporating systems but also LTPS CVD systems. The most important technology of thin-film encapsulation (TFE) is preventing moisture($H_2O$) and oxygen permeation into flexible OLED devices. As a polymer substrate does not offer the same barrier performance as glass substrate, the TFE should be developed on both the bottom and top side of the device layers for sufficient lifetimes. This report provides a review of promising thin-film barrier technologies as well as the WVTR(Water Vapor Transmission Rate) properties. Multilayer thin-film deposition technology of organic and inorganic layer is very effective method for increasing barrier performance of OLED device. Gases and water in the organic evaporating system is having a strong influence as impurities to OLED device. CRYO pump is one of the very useful vacuum components to reduce above impurities. There for CRYO pump is faster than conventional TMP exhaust velocity of gases and water. So, we suggest new method to make a good vacuum condition which is CRYO Trap addition on OLED evaporator. Alignment accuracy is one of the key technologies to perform high resolution OLED device. In order to reduce vibration characteristic of CRYO pump, ULVAC has developed low vibration CRYO pumps to achieve high resolution alignment performance between Metal mask and substrate. This report also includes ULVAC's approach for these issues.

• Journal of the Korean Vacuum Society
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• v.17 no.5
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• pp.461-465
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• 2008

The phase transformation in a film influences its surrounding. Effects of the precrystallization method, which removes influences on gate oxide caused by lateral crystallization, in metal-induced unilaterally crystallized polycrystalline silicon thin-film transistor devices and circuits were studied. Device by the method was shown to have a higher current drive, compared with conventional postcrystallized device. Moreover, we studied DC bias-induced changes in the performance of ring oscillator. PMOS inverters fabricated using precrystallized silicon films have very high dynamic and stable performance, compared with inverters fabricated using postcrystallized silicon films.

• Journal of the Korean Society of Radiology
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• v.4 no.4
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• pp.25-28
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• 2010

In this paper, the fabrication and feasibility study of clinical application with euripium doped gadollium oxide ($Gd_2O_3$:Eu) nano phosphor derived by low-temperature solution combustion method. From the fabricated phosphor, the photoluminescent characteristic and linearity as a function of phosphor film thickness were investigated to evaluate x-ray converstion properties. From the experimental results, the luminescent intensity was $2945pC/cm^2$-mR at $270{\mu}m$ $Gd_2O_3$:Eu film and this value is higher 1.2 time the conventional bulk phosphor, which is possible to imaging acquisition. And good linearity was shown at x-ray exposure range for clinical diagnostic application.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.7
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• pp.563-567
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• 2011

The most widely used piezoelectric ceramics are lead oxide based ferroelectrics (PZT). However, the toxicity of lead oxide and its high vapor pressure during processing have led to a demand for alternative lead-free piezoelectric materials. We synthesized Lead-free piezoelectric ceramics of $0.96(K_{0.5}Na_{0.5})NbO_3-0.04SrZrO_3+x$ mol% $ZrO_2$ [KNN-SZ+$xZrO_2$; x= 0~0.10] doped with 0.1 wt% $MnO_2$ by a conventional solid state method. We investigated the piezoelectric properties and microstructures of these disk samples sintered in reduced atmosphere in order to evaluate the possibility of the multilayered piezoelectric ceramics having the base metal such as Ni as a internal electrode. All of these KNN-SZ samples sintered in 3%$H_2-97%N_2$ atmosphere at $1,140^{\circ}C$ exhibit pure perovskite structure irrespective of the content of $ZrO_2$. Meanwhile, the sintering denisty and piezoelectric properties such as $K_p$, $Q_m$ and $d_{33}$ of KNN-SZ samples as a function of $ZrO_2$ content show the maxima ($k_p$=28.07%, $Q_m$= 101.34, $d_{33}$= 156 pC/N) at x= 0.04 and it is likely that there is some morphotropic phase boundary(MPB) in this KNN-SZ+$xZrO_2$ composition system. These results indicate that the ceramic composition is a promising candidate material for applications in lead free multilayer piezoelectric ceramics.

• Asian Pacific Journal of Cancer Prevention
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• v.17 no.4
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• pp.1999-2006
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• 2016

Background: Acute promyelocytic leukemia (APML) is characterized by the reciprocal translocation t(15;17) (p22;p12) resulting in the PML-$RAR{\alpha}$ fusion gene. A dual diagnostic and follow up approach was applied including cytogenetic demonstration of the t(15;17) translocation and detection dg PML-$RAR{\alpha}$ chimeric transcripts by molecular means. Purpose: Conventional cytogenetics involving bone marrow is beset with high probability of poor metaphase index and was substituted with phytohemagglutinin (PHA)-induced peripheral blood culture based cytogenetic analysis as a diagnostic & follow up modality in APML patients of Kashmir (North India). Both qualitative (RT-PCR) and quantitative (Q-PCR) tests were simultaneously carried out to authenticte the modified cytogenetics. Materials and Method: Patient samples were subjected to the said techniques to establish their baseline as well as follow-up status. Results: Initial cytogenetics revealed 30 patients (81%) Positive for t(15;17) whereas 7 (19%) had either cryptic translocation or were negative for t(15;17). Two cases had chromosome 16q deletion and no hallmark translocation t(15;17). Q-PCR status for PML-$RAR{\alpha}$ was found to be positive for all patients. All the APML patients were reassessed at the end of consolidation phase and during maintenance phase of chemotherapy where 6 patients had molecular relapse, wherein 4 also demonstrated cytogenetic relapse. Conclusions: It was found that PHA-induced peripheral blood cytogenetics along with molecular analysis could prove a reliable modality in the diagnosis and assessment of follow up response of APML patients.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.170-170
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• 2010

Thin-film transistors (TFT) have become the key components of electronic and optoelectronic devices. Most conventional thin-film field-effect transistors in display applications use an amorphous or polycrystal Si:H layer as the channel. This silicon layers are opaque in the visible range and severely restrict the amount of light detected by the observer due to its bandgap energy smaller than the visible light. Therefore, Si:H TFT devices reduce the efficiency of light transmittance and brightness. One method to increase the efficiency is to use the transparent oxides for the channel, electrode, and gate insulator. The development of transparent oxides for the components of thin-film field-effect transistors and the room-temperature fabrication with low voltage operations of the devices can offer the flexibility in designing the devices and contribute to the progress of next generation display technologies based on transparent displays and flexible displays. In this thesis, I report on the dc performance of transparent thin-film transistors using amorphous indium tin zinc oxides for an active layer. $SiO_2$ was employed as the gate dielectric oxide. The amorphous indium tin zinc oxides were deposited by RF magnetron sputtering. The carrier concentration of amorphous indium tin zinc oxides was controlled by oxygen pressure in the sputtering ambient. Devices are realized that display a threshold voltage of 4.17V and an on/off ration of ${\sim}10^9$ operated as an n-type enhancement mode with saturation mobility with $15.8\;cm^2/Vs$. In conclusion, the fabrication and characterization of thin-film transistors using amorphous indium tin zinc oxides for an active layer were reported. The devices were fabricated at room temperature by RF magnetron sputtering. The operation of the devices was an n-type enhancement mode with good saturation characteristics.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.288-289
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• 2011

Indium Tin Oxide (ITO) is a typical highly Transparent Conductive Oxide (TCO) currently used as a transparent electrode material. Most widely used deposition method is the sputtering process for ITO film deposition because it has a high deposition rate, allows accurate control of the film thickness and easy deposition process and high electrical/optical properties. However, to apply high quality ITO thin film in a flexible microelectronic device using a plastic substrate, conventional DC magnetron sputtering (DMS) processed ITO thin film is not suitable because it needs a high temperature thermal annealing process to obtain high optical transmittance and low resistivity, while the generally plastic substrates has low glass transition temperatures. In the room temperature sputtering process, the electrical property degradation of ITO thin film is caused by negative oxygen ions effect. This high energy negative oxygen ions(about over 100eV) can be critical physical bombardment damages against the formation of the ITO thin film, and this damage does not recover in the room temperature process that does not offer thermal annealing. Hence new ITO deposition process that can provide the high electrical/optical properties of the ITO film at room temperature is needed. To solve these limitations we develop the Magnetic Field Shielded Sputtering (MFSS) system. The MFSS is based on DMS and it has the plasma limiter, which compose the permanent magnet array (Fig.1). During the ITO thin film deposition in the MFSS process, the electrons in the plasma are trapped by the magnetic field at the plasma limiters. The plasma limiter, which has a negative potential in the MFSS process, prevents to the damage by negative oxygen ions bombardment, and increases the heat(-) up effect by the Ar ions in the bulk plasma. Fig. 2. shows the electrical properties of the MFSS ITO thin film and DMS ITO thin film at room temperature. With the increase of the sputtering pressure, the resistivity of DMS ITO increases. On the other hand, the resistivity of the MFSS ITO slightly increases and becomes lower than that of the DMS ITO at all sputtering pressures. The lowest resistivity of the DMS ITO is $1.0{\times}10-3{\Omega}{\cdot}cm$ and that of the MFSS ITO is $4.5{\times}10-4{\Omega}{\cdot}cm$. This resistivity difference is caused by the carrier mobility. The carrier mobility of the MFSS ITO is 40 $cm^2/V{\cdot}s$, which is significantly higher than that of the DMS ITO (10 $cm^2/V{\cdot}s$). The low resistivity and high carrier mobility of the MFSS ITO are due to the magnetic field shielded effect. In addition, although not shown in this paper, the roughness of the MFSS ITO thin film is lower than that of the DMS ITO thin film, and TEM, XRD and XPS analysis of the MFSS ITO show the nano-crystalline structure. As a result, the MFSS process can effectively prevent to the high energy negative oxygen ions bombardment and supply activation energies by accelerating Ar ions in the plasma; therefore, high quality ITO can be deposited at room temperature.

• Korean Journal of Optics and Photonics
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• v.19 no.1
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• pp.20-24
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• 2008

A color filter was proposed and demonstrated by incorporating a subwavelength patterned 1-dimensional grating in poly silicon. It was produced by employing the laser interference lithography method, providing much wider effective area compared to the conventional e-beam lithography. A $SiO_2$ layer was introduced on top of the silicon grating layer as a mask for the etching of the silicon, facilitating the etching of the silicon layer. It was theoretically found that the selectivity of the filter was also improved thanks to the oxide layer. The parameters for the designed device include the grating pitch of 450 nm, the grating height of 100 nm and the oxide-layer height of 200 nm. As for the fabricated filter, the spectral pass band corresponded to the blue color centered at 470 nm and the peak transmission was about 40%. Within the effective area of $3{\times}3mm^2$, the variation in the relative transmission efficiency and in the center wavelength was less than 10% and 2 nm respectively. Finally, the influence of the angle of the incident beam upon the transfer characteristics of the device was investigated in terms of the rate of the relative transmission efficiency, which was found to be equivalent to 1.5%/degree.