• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.843-846
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• 2000

The (1-x)MgTiO$_3$-xSrTiO$_3$(x=0.02∼0.08) ceramics were fabricated by conventional mixed oxide method. The sintering temperature and time were 1250$^{\circ}C$∼1400$^{\circ}C$, 2hr., respectively. The structural and microwave dielectric properties were investigated by varying sintering temperature and composition ratio. In the (1-x)MgTiO$_3$-xSrTiO$_3$(x=0.02) ceramics, the cubic SrTiO$_3$and hexagonal MgTiO$_3$phases were coexisted. The dielectric constant was increased and the temperature coefficient of resonant frequency( $\tau_f$) was decreased with addition of SrTiO$_3$. The temperature coefficient of resonant frequency($\tau_f$) was gradually varied from negative value to positive value with increasing the SrTiO$_3$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.387-390
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• 2000

The $Al_2$O$_3$specimens were prepared by the conventional mixed oxide method with addition La$_2$O$_3$, Bi$_2$O$_3$. The specimens were sintered at 15$25^{\circ}C$, 5hr., in air. The structural properties of the specimens were investigated by XRD and SEM. The $Al_2$O$_3$ceramics with dopants had hexagonal structure and didn't show secondary phases. In the case of specimens with 0.25wt% La$_2$O$_3$and 0.25wt% Bi$_2$O$_3$bulk densities and lattice parameter of c/a were 3.818g/cm$^3$, 3.783g/cm$^3$and ca=2.725, c/a=2.723, respectively. The bulk densities of $Al_2$O$_3$ceramics were decreased with dopants.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 추계학술대회 논문집 전기물성,응용부문
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• pp.88-90
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• 2002

The $BaTi_4O_9$ ceramics with $Y_2O_3$(0.5wt%) were prepared by the conventional mixed oxide method. The structural properties were investigated with sintering temperature by XRD. The microwave dielectric properties also were investigated as a function of sintering temperature. According to the X-ray diffraction pattern of the $BaTi_4O_9$ ceramics with $Y_2O_3$(0.5wt%), the orthorhombic $BaTi_4O_9$ were appeared. In the case of $BaTi_4O_9+Y_2O_3$(0.5wt%) ceramics sintered $1400^{\circ}C$, dielectric constant. quality factor and temperature coefficient of resonant frequency were 41.3, 41,600, $+3.2ppm/^{\circ}C$, respectively.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 추계학술대회 논문집 전기물성,응용부문
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• pp.94-96
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• 2002

The $0.97MgTiO_3-0.03SrTiO_3$ ceramics with $B_2O_3$(10wt%) were prepared by the conventional mixed oxide method. The structural properties were investigated with sintering temperature by XRD and SEM. According to the X-ray diffraction patterns of the $0.97MgTiO_3-0.03SrTiO_3$ ceramics with $B_2O_3$(10wt%), the ilmenite $MgTiO_3$ and perovskite $SrTiO_3$ structures were coexisted and secondary phase $MgTi_2O_5$ were appeared. Increasing the sintering temperature. the grain size was increased. In the case of $0.97MgTiO_3-0.03SrTiO_3$ ceramics with $B_2O_3$(10wt%), dielectric constant, quality factor and temperature coefficient of resonant frequency were $13.52{\sim}18.13,\;32750{\sim}51736GHz$, $-15.78{\sim}25.64ppm/^{\circ}C$, respectively.

• 한국전기전자재료학회논문지
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• 제23권7호
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• pp.517-520
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• 2010

Lead-free $0.9(Na_{0.52}K_{0.48})NbO_3$ - $0.1LiTaO_3$ piezoelectric ceramics doped with $Ag_2O$ (0-4 mol%) have been prepared by the conventional mixed oxide method. The structural and electrical properties were analyzed in order to find its potential applications. The crystal structure of 1-4 mol% Ag doped $0.9(Na_{0.52}K_{0.48})NbO_3$-$0.1LiTaO_3$ lead free piezoelectric ceramics were investigated for several sintering temperatures ($1100^{\circ}C$) by the use of X-ray diffraction analysis. In order to analyze the effect of Ag dopants on the $0.9(Na_{0.52}K_{0.48})NbO_3$-$0.1LiTaO_3$ ceramic, the diffraction intensity ratio of the (002) to (200) planes were calculated from the X-ray diffraction patterns of the ceramic samples.

• 한국전기전자재료학회논문지
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• 제22권10호
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• pp.864-869
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• 2009

The measurement of contact wire uplift in electric railways is one of the most important test parameters to accepting the maximum permitted speed of new electric vehicles and pantographs. The contact wire uplift can be measured over short periods when the pantograph passes monitoring stations. In this paper, a high-speed image measurement system and its image processing method are being developed to evaluate dynamic uplift of overhead contact wires caused by pantograph contact forces of Korea Tilting Train eXpress (TTX) and Korea Train eXpress (KTX). The image measurement system was implemented utilizing a high-speed CMOS (Complementary Metal Oxide Semiconductor) camera and gigabit ethernet LAN. Unlike previous systems, the uplift measurement system using high speed camera is installed on the side of the rail, making maintenance convenient. On-field verification of the uplift measurement system for overhead contact wire using high speed camera was conducted by measuring uplift of the TTX followed by operation speeds at the Honam conventional line and high-speed railway line. The proposed high-speed image measurement system to evaluate dynamic uplift of overhead contact wires shows promising on-field applications for high speed trains such as KTX and TTX.

• 한국전기전자재료학회논문지
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• 제22권10호
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• pp.837-843
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• 2009

$TiO_2$(2 wt.%)-doped ZnO(TZO) films with thickness from 100 nm to 500 nm were prepared on polyethylene naphthalate(PEN) substrate under various rf-power range from 40 W to 80 W. Their electrical and optical properties were investigated as a function of rf-power. We think that these properties were closely related with the crystallization and the film density of TZO films. It was also presumed that the vaporization of the water vapor and other adsorbed particles such as an organic solvents can affect the electrical properties of the conventional transparent conductive oxide(TCO) films. On the other hand, since the TZO film deposited on glass substrate at room temperature with rf-power of 80 W shows a very low resistivity of $7.5\times10^{-4}\;\Omega{\cdot}cm$ and a very excellent transmittance over an average 85% in the visible range, that is comparable to that of ITO films. Therefore, we expect that the TZO films can be used as transparent electrode for optoelectronic devices such as touch-panels, flat-panel displays, and thin-film solar cells.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.268-269
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• 2007

In this study, the structural and microwave dielectric properties of the $Sr_5Nb_4O_{15}$ cation-deficient perovskite ceramics with sintering temperature were investigated. All sample of the $Sr_5Nb_4O_{15}$ ceramics were prepared by the conventional mixed oxide method and sintered at $1350^{\circ}C{\sim}1500^{\circ}C$. The bulk density, dielectric constant and quality factor of the $Sr_5Nb_4O_{15}$ ceramics were increased with increasing sintering temperature. In the case of the $Sr_5Nb_4O_{15}$ ceramics sintered at $1500^{\circ}C$ for 5h, the dielectric constant, quality factor and temperature coefficient of the resonant frequency (TCRF) were 22.35, 16,577GHz, +13.40ppm/$^{\circ}C$, respectively.

• Journal of Electrochemical Science and Technology
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• 제12권4호
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• pp.415-423
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• 2021

For a battery module where single cells are connected in series, the single cells should each have a similar state of charge (SOC) to prevent them from being exposed to an overcharge or over-discharge during charge-discharge cycling. To detect the existence of unbalanced SOC cells in a battery module, we propose a simple measurement method using a single-frequency response of electrochemical impedance spectroscopy (EIS). For a commercially available graphite/nickel-cobalt-aluminum-oxide lithium-ion cell, the cell impedance increases significantly below SOC20%, while the impedance in the medium SOC region (SOC20%-SOC80%) remains low with only minor changes. This impedance behavior is mostly due to the elementary processes of cathode reactions in the cell. Among the impedance values (Z, Z', Z"), the imaginary component of Z" regarding cathode reactions changes heavily as a function of SOC, in particular, when the EIS measurement is performed around 0.1 Hz. Thanks to the significant difference in the time constant of cathode reactions between ≤SOC10% and ≥SOC20%, a single-frequency EIS measurement enlarges the difference in impedance between balanced and unbalanced cells in the module and facilitates an ~80% improvement in the detection signal compared to results with conventional EIS measurements.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.282-285
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• 1999

The (1-x)MgTiO$_3$-xSrTiO$_3$(x=0,0.1) ceramics were prepared by the conventional mixed oxide method. The structural properties were investigated with sintering temperature and composition ratio by XRD, SEM and DT-TGA. Increasing the sintering temperature from 130$0^{\circ}C$ to 1$600^{\circ}C$, second phase was decreased and grain size was increased. In the case of 0.9 MgTiO$_3$-0.1SrTiO$_3$ ceramics sintered at 130$0^{\circ}C$, dielectric constant, quality factor and temperature coefficient of resonant frequency were 22.61, 10,928(at 1GHz), +50.26ppm/$^{\circ}C$ , respectively.